JP2009539270A5 - - Google Patents

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Publication number
JP2009539270A5
JP2009539270A5 JP2009513455A JP2009513455A JP2009539270A5 JP 2009539270 A5 JP2009539270 A5 JP 2009539270A5 JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009539270 A5 JP2009539270 A5 JP 2009539270A5
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Japan
Prior art keywords
precursors
steps
deposition process
precursor
film
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Pending
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JP2009513455A
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Japanese (ja)
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JP2009539270A (en
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Priority claimed from US11/443,621 external-priority patent/US7867905B2/en
Priority claimed from US11/443,620 external-priority patent/US7442615B2/en
Application filed filed Critical
Priority claimed from PCT/US2007/070082 external-priority patent/WO2007140455A2/en
Publication of JP2009539270A publication Critical patent/JP2009539270A/en
Publication of JP2009539270A5 publication Critical patent/JP2009539270A5/ja
Pending legal-status Critical Current

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Claims (14)

加工チャンバ内で膜を堆積させる方法であって、
（ａ）基板表面上の前駆体の第１の組の間の反応又は前駆体の前記第１の組の分解により薄膜が生成される堆積プロセスにより、薄層を堆積させるように前記前駆体の第１の組を導入するステップと、
（ｂ）前記堆積させた層を変更するための熱エネルギーを生成するフラッシュ・ランプをトリガするか、及び
前記堆積させた層を変更するためのプラズマ・エネルギーを生成するプラズマ・ソースをトリガするか、
の一方又は両方のステップと、
を含むことを特徴とする方法。 A method of depositing a film in a processing chamber comprising:
(A) a reaction between the first set of precursors on the substrate surface or a deposition process in which a thin film is generated by decomposition of the first set of precursors to deposit a thin layer of the precursor Introducing a first set;
(B) whether to trigger a flash lamp that generates thermal energy to change the deposited layer, and to trigger a plasma source to generate plasma energy to change the deposited layer ,
One or both steps of
A method comprising the steps of: 加工チャンバ内で膜を堆積させる方法であって、
（ａ）基板表面上の前駆体の第１の組の間の反応又は前駆体の前記第１の組の分解により薄膜が生成される堆積プロセスにより、薄層を堆積させるように前記前駆体の第１の組を導入するステップと、
（ｂ）前記堆積させた層を変更するための、熱エネルギーを生成するフラッシュ・ランプをトリガするステップと、
を含むことを特徴とする方法。 A method of depositing a film in a processing chamber comprising:
(A) a reaction between the first set of precursors on the substrate surface or a deposition process in which a thin film is generated by decomposition of the first set of precursors to deposit a thin layer of the precursor Introducing a first set;
(B) triggering a flash lamp to generate thermal energy to alter the deposited layer;
A method comprising the steps of: 加工チャンバ内で膜を堆積させる方法であって、
（ａ）基板表面上の前駆体の第１の組の間の反応又は前駆体の前記第１の組の分解により薄膜が生成される堆積プロセスにより、薄層を堆積させるように前記前駆体の第１の組を導入するステップと、
（ｂ）前記堆積させた層を変更するためのプラズマ・エネルギーを生成するプラズマ・ソースをトリガするステップと、
を含むことを特徴とする方法。 A method of depositing a film in a processing chamber comprising:
(A) a reaction between the first set of precursors on the substrate surface or a deposition process in which a thin film is generated by decomposition of the first set of precursors to deposit a thin layer of the precursor Introducing a first set;
(B) triggering a plasma source that generates plasma energy to alter the deposited layer;
A method comprising the steps of: 前記堆積プロセスが非自己制限的であり、前記堆積厚が堆積時間と共に増加することを特徴とする請求項１〜３のいずれか１項に記載の方法。   4. A method according to any one of claims 1 to 3, wherein the deposition process is non-self-limiting and the deposition thickness increases with deposition time. 前記ステップ（ａ）の後に、（ａ１）前記前駆体の第１の組をパージするステップをさらに含むことを特徴とする、請求項１〜４のいずれか１項に記載の方法。   5. The method of any one of claims 1-4, further comprising, after the step (a), (a1) purging the first set of precursors. 前記ステップ（ｂ）は、前駆体の第２の組を導入するステップをさらに含むことを特徴とする、請求項１〜４のいずれか１項に記載の方法。   5. A method according to any one of the preceding claims, wherein step (b) further comprises the step of introducing a second set of precursors. 前記ステップ（ｂ）の後に、（ｂ１）前記前駆体の第２の組をパージするステップをさらに含むことを特徴とする、請求項１〜４のいずれか１項に記載の方法。   5. The method of any one of claims 1-4, further comprising, after the step (b), (b1) purging the second set of precursors. 所望の膜厚が達成されるまで、前記ステップ（ａ）及び（ｂ）を繰り返し行うステップをさらに含むことを特徴とする、請求項１〜４のいずれか１項に記載の方法。   The method according to any one of claims 1 to 4, further comprising the step of repeatedly performing the steps (a) and (b) until a desired film thickness is achieved. 所望の膜厚が達成されるまで、前記ステップ（ａ）、（ａ１）及び（ｂ１）を繰り返し行うステップをさらに含むことを特徴とする、請求項５に記載の方法。   The method according to claim 5, further comprising the step of repeatedly performing the steps (a), (a1) and (b1) until a desired film thickness is achieved. 所望の膜厚が達成されるまで、前記ステップ（ａ）乃至（ｂ１）を繰り返し行うステップをさらに含むことを特徴とする、請求項７に記載の方法。   The method according to claim 7, further comprising the step of repeatedly performing the steps (a) to (b1) until a desired film thickness is achieved. 前記ステップ（ａ）は堆積プロセスにおいてプラズマ・エネルギーを用いるステップを含むことを特徴とする、請求項１又は３に記載の方法。   4. A method according to claim 1 or 3, characterized in that step (a) comprises using plasma energy in a deposition process. 前記前駆体の第１の組はＣＶＤ前駆体を含むことを特徴とする、請求項１〜４のいずれか１項に記載の方法。   The method according to claim 1, wherein the first set of precursors comprises a CVD precursor. 前記前駆体の第２の組は、窒素、酸素、水素、アンモニア、ＮＦ3、シラン、オゾン、アルゴンから成る群から選択されるプロセス気体を含むことを特徴とする、請求項６に記載の方法。 The method of claim 6, wherein the second set of precursors includes a process gas selected from the group consisting of nitrogen, oxygen, hydrogen, ammonia, NF 3 , silane, ozone, argon. . 前記前駆体の第２の組はＣＶＤ前駆体を含むことを特徴とする、請求項６に記載の方法。   The method of claim 6, wherein the second set of precursors comprises a CVD precursor.
JP2009513455A 2006-05-31 2007-05-31 System and method for semiconductor processing Pending JP2009539270A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/443,621 US7867905B2 (en) 2001-04-21 2006-05-31 System and method for semiconductor processing
US11/443,620 US7442615B2 (en) 2001-04-21 2006-05-31 Semiconductor processing system and method
PCT/US2007/070082 WO2007140455A2 (en) 2006-05-31 2007-05-31 System and method for semiconductor processing

Publications (2)

Publication Number Publication Date
JP2009539270A JP2009539270A (en) 2009-11-12
JP2009539270A5 true JP2009539270A5 (en) 2010-07-22

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EP (1) EP2032744A2 (en)
JP (1) JP2009539270A (en)
KR (1) KR20090017661A (en)
WO (1) WO2007140455A2 (en)

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US10734195B2 (en) * 2017-06-08 2020-08-04 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

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JPH029789A (en) * 1988-06-28 1990-01-12 Nec Corp Method for growing silicon
JPH04162427A (en) * 1990-10-24 1992-06-05 Fujitsu Ltd Device and method for vapor phase film formation
JP2680202B2 (en) * 1991-03-20 1997-11-19 国際電気株式会社 Vapor phase growth method and apparatus
JPH0574713A (en) * 1991-09-17 1993-03-26 Nippondenso Co Ltd Manufacture of amorphous semiconductor thin film
JPH06291060A (en) * 1993-03-30 1994-10-18 Nissin Electric Co Ltd Thin-film formation method
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH08186173A (en) * 1994-12-28 1996-07-16 Nec Corp Manufacture of semiconductor device
US6610169B2 (en) * 2001-04-21 2003-08-26 Simplus Systems Corporation Semiconductor processing system and method
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP2004311955A (en) * 2003-03-25 2004-11-04 Sony Corp Method for manufacturing very thin electro-optical display device
JP4396547B2 (en) * 2004-06-28 2010-01-13 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium

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