KR20090017661A - 반도체 프로세싱을 위한 시스템 및 방법 - Google Patents

반도체 프로세싱을 위한 시스템 및 방법 Download PDF

Info

Publication number
KR20090017661A
KR20090017661A KR1020087032103A KR20087032103A KR20090017661A KR 20090017661 A KR20090017661 A KR 20090017661A KR 1020087032103 A KR1020087032103 A KR 1020087032103A KR 20087032103 A KR20087032103 A KR 20087032103A KR 20090017661 A KR20090017661 A KR 20090017661A
Authority
KR
South Korea
Prior art keywords
precursor
deposition
plasma
introducing
triggering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087032103A
Other languages
English (en)
Korean (ko)
Inventor
튜 느구옌
타이 둥 느구옌
크레이그 알란 베르코
Original Assignee
테갈 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/443,621 external-priority patent/US7867905B2/en
Priority claimed from US11/443,620 external-priority patent/US7442615B2/en
Application filed by 테갈 코퍼레이션 filed Critical 테갈 코퍼레이션
Publication of KR20090017661A publication Critical patent/KR20090017661A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020087032103A 2006-05-31 2007-05-31 반도체 프로세싱을 위한 시스템 및 방법 Ceased KR20090017661A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/443,621 2006-05-31
US11/443,620 2006-05-31
US11/443,621 US7867905B2 (en) 2001-04-21 2006-05-31 System and method for semiconductor processing
US11/443,620 US7442615B2 (en) 2001-04-21 2006-05-31 Semiconductor processing system and method

Publications (1)

Publication Number Publication Date
KR20090017661A true KR20090017661A (ko) 2009-02-18

Family

ID=38779474

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087032103A Ceased KR20090017661A (ko) 2006-05-31 2007-05-31 반도체 프로세싱을 위한 시스템 및 방법

Country Status (4)

Country Link
EP (1) EP2032744A2 (https=)
JP (1) JP2009539270A (https=)
KR (1) KR20090017661A (https=)
WO (1) WO2007140455A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200006180A (ko) * 2017-06-08 2020-01-17 램 리써치 코포레이션 변압기 커플링된 용량성 튜닝 스위칭 (switching) 으로 변압기 커플링된 플라즈마 펄싱하는 (pulsing) 시스템들 및 방법들

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029789A (ja) * 1988-06-28 1990-01-12 Nec Corp シリコンの成長方法
JPH04162427A (ja) * 1990-10-24 1992-06-05 Fujitsu Ltd 気相成膜装置および気相成膜方法
JP2680202B2 (ja) * 1991-03-20 1997-11-19 国際電気株式会社 気相成長方法及び装置
JPH0574713A (ja) * 1991-09-17 1993-03-26 Nippondenso Co Ltd 非晶質半導体薄膜の製造方法
JPH06291060A (ja) * 1993-03-30 1994-10-18 Nissin Electric Co Ltd 薄膜形成方法
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH08186173A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
US6610169B2 (en) * 2001-04-21 2003-08-26 Simplus Systems Corporation Semiconductor processing system and method
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP2004311955A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP4396547B2 (ja) * 2004-06-28 2010-01-13 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200006180A (ko) * 2017-06-08 2020-01-17 램 리써치 코포레이션 변압기 커플링된 용량성 튜닝 스위칭 (switching) 으로 변압기 커플링된 플라즈마 펄싱하는 (pulsing) 시스템들 및 방법들

Also Published As

Publication number Publication date
WO2007140455A3 (en) 2008-02-14
WO2007140455A2 (en) 2007-12-06
EP2032744A2 (en) 2009-03-11
JP2009539270A (ja) 2009-11-12

Similar Documents

Publication Publication Date Title
US6610169B2 (en) Semiconductor processing system and method
US20020123237A1 (en) Plasma pulse semiconductor processing system and method
US6756318B2 (en) Nanolayer thick film processing system and method
US6689220B1 (en) Plasma enhanced pulsed layer deposition
US20120202353A1 (en) Nanolayer deposition using plasma treatment
KR101897604B1 (ko) 수명이 짧은 종들을 위한 빌트-인 플라즈마 소스를 구비한 프로세스 챔버 리드 설계
US9245744B2 (en) Combinatorial plasma enhanced deposition and etch techniques
TW578212B (en) Atomic layer deposition reactor
US6417111B2 (en) Plasma processing apparatus
US9765430B2 (en) Plasma processing apparatus and film formation method
KR20110010631A (ko) 유동성 유전 장치 및 프로세스
US20080241387A1 (en) Atomic layer deposition reactor
CN109524289B (zh) 批量型等离子体衬底处理设备
JPH02130924A (ja) 半導体基板上への化学的蒸着法およびそれに用いるのに適した装置
US20220277932A1 (en) Plasma processing device
US7442615B2 (en) Semiconductor processing system and method
US7867905B2 (en) System and method for semiconductor processing
TWI845694B (zh) 電阻式隨機存取記憶體元件及其形成方法
JP2000068227A (ja) 表面処理方法および装置
CN115702473A (zh) 光电辅助等离子体点燃
KR102194604B1 (ko) 배치식 기판처리장치
US20140205769A1 (en) Cascaded plasma reactor
KR20090017661A (ko) 반도체 프로세싱을 위한 시스템 및 방법
US7678705B2 (en) Plasma semiconductor processing system and method

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000