WO2007140455A3 - System and method for semiconductor processing - Google Patents

System and method for semiconductor processing Download PDF

Info

Publication number
WO2007140455A3
WO2007140455A3 PCT/US2007/070082 US2007070082W WO2007140455A3 WO 2007140455 A3 WO2007140455 A3 WO 2007140455A3 US 2007070082 W US2007070082 W US 2007070082W WO 2007140455 A3 WO2007140455 A3 WO 2007140455A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash lamp
semiconductor processing
deploy
trigger
systems
Prior art date
Application number
PCT/US2007/070082
Other languages
French (fr)
Other versions
WO2007140455A2 (en
Inventor
Tue Nguyen
Tai Dung Nguyen
Craig Alan Bercaw
Original Assignee
Tegal Corp
Tue Nguyen
Tai Dung Nguyen
Craig Alan Bercaw
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/443,621 external-priority patent/US7867905B2/en
Priority claimed from US11/443,620 external-priority patent/US7442615B2/en
Application filed by Tegal Corp, Tue Nguyen, Tai Dung Nguyen, Craig Alan Bercaw filed Critical Tegal Corp
Priority to EP07811981A priority Critical patent/EP2032744A2/en
Priority to JP2009513455A priority patent/JP2009539270A/en
Publication of WO2007140455A2 publication Critical patent/WO2007140455A2/en
Publication of WO2007140455A3 publication Critical patent/WO2007140455A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
PCT/US2007/070082 2006-05-31 2007-05-31 System and method for semiconductor processing WO2007140455A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07811981A EP2032744A2 (en) 2006-05-31 2007-05-31 System and method for semiconductor processing
JP2009513455A JP2009539270A (en) 2006-05-31 2007-05-31 System and method for semiconductor processing

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/443,621 2006-05-31
US11/443,621 US7867905B2 (en) 2001-04-21 2006-05-31 System and method for semiconductor processing
US11/443,620 2006-05-31
US11/443,620 US7442615B2 (en) 2001-04-21 2006-05-31 Semiconductor processing system and method

Publications (2)

Publication Number Publication Date
WO2007140455A2 WO2007140455A2 (en) 2007-12-06
WO2007140455A3 true WO2007140455A3 (en) 2008-02-14

Family

ID=38779474

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/070082 WO2007140455A2 (en) 2006-05-31 2007-05-31 System and method for semiconductor processing

Country Status (4)

Country Link
EP (1) EP2032744A2 (en)
JP (1) JP2009539270A (en)
KR (1) KR20090017661A (en)
WO (1) WO2007140455A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734195B2 (en) * 2017-06-08 2020-08-04 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050037597A1 (en) * 2001-04-21 2005-02-17 Tue Nguyen Semiconductor processing system and method
US20050239240A1 (en) * 1994-06-02 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US20050266591A1 (en) * 2003-03-25 2005-12-01 Sony Corporation Manufacturing process for ultra slim electrooptic display device unit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029789A (en) * 1988-06-28 1990-01-12 Nec Corp Method for growing silicon
JPH04162427A (en) * 1990-10-24 1992-06-05 Fujitsu Ltd Device and method for vapor phase film formation
JP2680202B2 (en) * 1991-03-20 1997-11-19 国際電気株式会社 Vapor phase growth method and apparatus
JPH0574713A (en) * 1991-09-17 1993-03-26 Nippondenso Co Ltd Manufacture of amorphous semiconductor thin film
JPH06291060A (en) * 1993-03-30 1994-10-18 Nissin Electric Co Ltd Thin-film formation method
JPH08186173A (en) * 1994-12-28 1996-07-16 Nec Corp Manufacture of semiconductor device
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP4396547B2 (en) * 2004-06-28 2010-01-13 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050239240A1 (en) * 1994-06-02 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US20050037597A1 (en) * 2001-04-21 2005-02-17 Tue Nguyen Semiconductor processing system and method
US20050266591A1 (en) * 2003-03-25 2005-12-01 Sony Corporation Manufacturing process for ultra slim electrooptic display device unit

Also Published As

Publication number Publication date
EP2032744A2 (en) 2009-03-11
JP2009539270A (en) 2009-11-12
WO2007140455A2 (en) 2007-12-06
KR20090017661A (en) 2009-02-18

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