JP2009537676A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009537676A5 JP2009537676A5 JP2009511417A JP2009511417A JP2009537676A5 JP 2009537676 A5 JP2009537676 A5 JP 2009537676A5 JP 2009511417 A JP2009511417 A JP 2009511417A JP 2009511417 A JP2009511417 A JP 2009511417A JP 2009537676 A5 JP2009537676 A5 JP 2009537676A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- formula
- organic semiconductor
- semiconductor material
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052723 transition metal Inorganic materials 0.000 claims description 16
- 150000003624 transition metals Chemical class 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 230000002950 deficient Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 6
- -1 alicyclic hydrocarbon Chemical class 0.000 claims description 5
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 claims description 5
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000012044 organic layer Substances 0.000 claims description 3
- 150000004032 porphyrins Chemical class 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 150000001412 amines Chemical class 0.000 claims 4
- 125000003118 aryl group Chemical group 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 125000004105 2-pyridyl group Chemical group N1=C([*])C([H])=C([H])C([H])=C1[H] 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 150000001491 aromatic compounds Chemical class 0.000 claims 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims 2
- 125000001072 heteroaryl group Chemical group 0.000 claims 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 150000002825 nitriles Chemical class 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 claims 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 125000003944 tolyl group Chemical group 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 125000003003 spiro group Chemical group 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000006254 arylation reaction Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- BOXSCYUXSBYGRD-UHFFFAOYSA-N cyclopenta-1,3-diene;iron(3+) Chemical compound [Fe+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 BOXSCYUXSBYGRD-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 150000002390 heteroarenes Chemical class 0.000 description 1
- 125000005241 heteroarylamino group Chemical group 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000007979 thiazole derivatives Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06010719A EP1860709B1 (de) | 2006-05-24 | 2006-05-24 | Verwendung von quadratisch planaren Übergangsmetallkomplexen als Dotand |
| EP06010719.0 | 2006-05-24 | ||
| PCT/EP2007/004638 WO2007134873A1 (de) | 2006-05-24 | 2007-05-24 | Verwendung von quadratisch planaren übergangsmetallkomplexen als dotand |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009537676A JP2009537676A (ja) | 2009-10-29 |
| JP2009537676A5 true JP2009537676A5 (enExample) | 2015-07-16 |
| JP5788140B2 JP5788140B2 (ja) | 2015-09-30 |
Family
ID=37136670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009511417A Active JP5788140B2 (ja) | 2006-05-24 | 2007-05-24 | 平面正方形遷移金属錯体の使用 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9722190B2 (enExample) |
| EP (1) | EP1860709B1 (enExample) |
| JP (1) | JP5788140B2 (enExample) |
| KR (1) | KR20090024722A (enExample) |
| WO (1) | WO2007134873A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007028238A1 (de) * | 2007-06-20 | 2008-12-24 | Osram Opto Semiconductors Gmbh | Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und organische Leuchtdiode |
| DE102007028237A1 (de) * | 2007-06-20 | 2008-12-24 | Osram Opto Semiconductors Gmbh | Verwendung eines Metallkomplexes als p-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| DE102007028236A1 (de) * | 2007-06-20 | 2009-01-02 | Siemens Ag | Halbleitendes Material und organische Gleichrichterdiode |
| DE102008051737B4 (de) | 2007-10-24 | 2022-10-06 | Novaled Gmbh | Quadratisch planare Übergangsmetallkomplexe, organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente, die diese umfassen und Verwendung derselben |
| DE102008011185A1 (de) | 2008-02-27 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer dotierten organischen halbleitenden Schicht |
| GB2467316B (en) | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
| US8119037B2 (en) * | 2008-10-16 | 2012-02-21 | Novaled Ag | Square planar transition metal complexes and organic semiconductive materials using them as well as electronic or optoelectric components |
| GB2473200B (en) | 2009-09-02 | 2014-03-05 | Pragmatic Printing Ltd | Structures comprising planar electronic devices |
| KR102445509B1 (ko) | 2013-12-06 | 2022-09-20 | 메르크 파텐트 게엠베하 | 화합물 및 유기 전자 소자 |
| EP3077382B1 (de) | 2013-12-06 | 2018-12-26 | Merck Patent GmbH | Substituierte oxepine |
| EP3002797B1 (en) * | 2014-09-30 | 2020-04-29 | Novaled GmbH | A light emitting organic device and an active OLED display |
| KR102478039B1 (ko) | 2017-02-20 | 2022-12-14 | 노발레드 게엠베하 | 전자 반도전성 소자, 전자 반도전성 소자를 제조하기 위한 방법, 및 화합물 |
| WO2018189134A1 (de) | 2017-04-13 | 2018-10-18 | Merck Patent Gmbh | Zusammensetzung für organische elektronische vorrichtungen |
| US12098157B2 (en) | 2017-06-23 | 2024-09-24 | Universal Display Corporation | Organic electroluminescent materials and devices |
| KR20240110060A (ko) | 2017-06-26 | 2024-07-12 | 메르크 파텐트 게엠베하 | 균질 혼합물 |
| US11993572B2 (en) | 2017-07-05 | 2024-05-28 | Merck Patent Gmbh | Composition for organic electronic devices |
| TWI808980B (zh) | 2017-07-05 | 2023-07-21 | 德商麥克專利有限公司 | 用於有機電子裝置之組成物 |
| EP3462516A1 (en) * | 2017-10-02 | 2019-04-03 | Novaled GmbH | Electronic device and method for preparing the same |
| TWI785142B (zh) | 2017-11-14 | 2022-12-01 | 德商麥克專利有限公司 | 用於有機電子裝置之組成物 |
| WO2019229011A1 (de) | 2018-05-30 | 2019-12-05 | Merck Patent Gmbh | Zusammensetzung für organische elektronische vorrichtungen |
| US20220127286A1 (en) | 2019-03-04 | 2022-04-28 | Merck Patent Gmbh | Ligands for nano-sized materials |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2232260B2 (de) | 1972-06-30 | 1974-05-30 | Gesellschaft Fuer Kernforschung Mbh, 7500 Karlsruhe | Verwendung von heterocyclisch omega, omega'-disubstituiertenp-Oligophenylenen als Strahlenumwandler |
| US4606326A (en) * | 1984-07-12 | 1986-08-19 | The Standard Oil Company | Ionically polymer-bound transition metal complex for photochemical conversion of light energy |
| JPH03208689A (ja) | 1990-01-12 | 1991-09-11 | Dainippon Printing Co Ltd | 光情報記録媒体及びその製造方法 |
| DE4112793A1 (de) | 1991-04-19 | 1992-10-22 | Basf Ag | Verfahren zur herstellung von hydrolysestabilen, estergruppen gebunden enthaltenden polyurethanen und phenylen-bis-oxazoline enthaltende polyurethan elastomere |
| US5792568A (en) * | 1995-04-25 | 1998-08-11 | Sharp Kabushiki Kaisha | Organic electroluminescent element |
| US6160267A (en) | 1999-01-05 | 2000-12-12 | Regents Of The University Of Minnesota | Vapochromic led |
| JP2000252077A (ja) * | 1999-02-26 | 2000-09-14 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子 |
| US7001536B2 (en) | 1999-03-23 | 2006-02-21 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
| US6645579B1 (en) * | 1999-11-29 | 2003-11-11 | Canon Kabushiki Kaisha | Liquid crystal device |
| JP4717198B2 (ja) | 1999-11-29 | 2011-07-06 | キヤノン株式会社 | 有機エレクトロルミネッセンス素子 |
| US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| DE10058578C2 (de) * | 2000-11-20 | 2002-11-28 | Univ Dresden Tech | Lichtemittierendes Bauelement mit organischen Schichten |
| CN1267525C (zh) | 2001-03-08 | 2006-08-02 | 香港大学 | 有机金属光发射材料 |
| WO2003022908A1 (en) | 2001-09-04 | 2003-03-20 | Canon Kabushiki Kaisha | High-molecular compounds and organic luminescent devices |
| US6653654B1 (en) | 2002-05-01 | 2003-11-25 | The University Of Hong Kong | Electroluminescent materials |
| JP2003332074A (ja) | 2002-05-09 | 2003-11-21 | Canon Inc | 金属配位化合物を用いた発光素子 |
| US20030230980A1 (en) * | 2002-06-18 | 2003-12-18 | Forrest Stephen R | Very low voltage, high efficiency phosphorescent oled in a p-i-n structure |
| CN1681828B (zh) | 2002-08-16 | 2012-05-30 | 南加利福尼亚大学 | 含阴离子配体的有机发光材料 |
| CN100340630C (zh) | 2002-08-16 | 2007-10-03 | 南加利福尼亚大学 | 有机发光材料和器件 |
| JP3963811B2 (ja) | 2002-09-30 | 2007-08-22 | 富士フイルム株式会社 | 有機電界発光素子 |
| DE10251986A1 (de) | 2002-11-08 | 2004-05-19 | Covion Organic Semiconductors Gmbh | Palladium- und Platin-Komplexe |
| KR100991112B1 (ko) | 2002-12-19 | 2010-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제작 방법 |
| DE10338406A1 (de) * | 2003-08-18 | 2005-03-24 | Novaled Gmbh | Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung |
| DE10338550A1 (de) | 2003-08-19 | 2005-03-31 | Basf Ag | Übergangsmetallkomplexe mit Carbenliganden als Emitter für organische Licht-emittierende Dioden (OLEDs) |
| US7655961B2 (en) * | 2003-10-02 | 2010-02-02 | Maxdem Incorporated | Organic diodes and materials |
| DE10350606A1 (de) * | 2003-10-30 | 2005-06-09 | Covion Organic Semiconductors Gmbh | Verfahren zur Herstellung heteroleptischer, ortho-metallierter Organometall-Verbindungen |
| DE10357044A1 (de) * | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| DE10358665A1 (de) | 2003-12-12 | 2005-07-07 | Basf Ag | Verwendung von Platin(II)-Komplexen als lumineszierende Materialien in organischen Licht-emittierenden Dioden (OLEDs) |
| DE102004010954A1 (de) | 2004-03-03 | 2005-10-06 | Novaled Gmbh | Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil |
| DE102004018145A1 (de) | 2004-04-08 | 2005-10-27 | Basf Ag | Verwendung von Metallocenkomplexen von Metallen der 4. Nebengruppe des Periodensystems als Triplettemitter in organischen Leuchtdioden (OLEDs) |
| US7279704B2 (en) | 2004-05-18 | 2007-10-09 | The University Of Southern California | Complexes with tridentate ligands |
| WO2005123754A2 (en) | 2004-06-14 | 2005-12-29 | Georgia Tech Research Corporation | Transition-metal charge-transport materials, methods of fabrication thereof, and methods of use thereof |
| EP1703572A1 (en) | 2005-01-25 | 2006-09-20 | SONY DEUTSCHLAND GmbH | Molecular rectifiers |
| EP1803789A1 (de) | 2005-12-28 | 2007-07-04 | Novaled AG | Verwendung von Metallkomplexen als Emitter in einem elektronischen Bauelement und elektronisches Bauelement |
-
2006
- 2006-05-24 EP EP06010719A patent/EP1860709B1/de active Active
-
2007
- 2007-05-24 KR KR1020087031236A patent/KR20090024722A/ko not_active Ceased
- 2007-05-24 JP JP2009511417A patent/JP5788140B2/ja active Active
- 2007-05-24 WO PCT/EP2007/004638 patent/WO2007134873A1/de not_active Ceased
- 2007-05-24 US US12/301,828 patent/US9722190B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009537676A5 (enExample) | ||
| JP5788140B2 (ja) | 平面正方形遷移金属錯体の使用 | |
| KR101460021B1 (ko) | 유기 반도체 매트릭스 물질을 도핑하기 위한 도펀트로서의 헤테로시클릭 라디칼 또는 헤테로시클릭 디라디칼, 이의 다이머, 올리고머, 폴리머, 디스피로 화합물 및 폴리사이클의 용도 | |
| US8119037B2 (en) | Square planar transition metal complexes and organic semiconductive materials using them as well as electronic or optoelectric components | |
| JP5431163B2 (ja) | ジチオレン遷移金属錯体およびセレニウム類似化合物のドーパントとしての使用 | |
| EP2463927B1 (en) | Material for organic electronic device and organic electronic device | |
| US9156868B2 (en) | Aryl-substituted and/or heteroaryl-substituted main group element halides and/or pseudohalides, use of main group element halides and/or pseudohalides, organic semiconducting matrix material, electronic and optoelectronic components | |
| JP5566690B2 (ja) | ジチオレン遷移金属の錯体およびセレン様の化合物、ドーピング剤としての上記錯体および上記化合物の使用、上記錯体を含む有機半導体材料、ならびに、錯体を含むエレクトロニック構造素子またはオプトエレクトロニック構造素子 | |
| CN101134744B (zh) | 杂环的化合物,其用途、有机半导体材料和电子或光电元件 | |
| Janzen et al. | Preparation and characterization of π-stacking quinodimethane oligothiophenes. Predicting semiconductor behavior and bandwidths from crystal structures and molecular orbital calculations | |
| US9276223B2 (en) | Dopant for a hole conductor layer for organic semiconductor components, and use thereof | |
| Riera-Galindo et al. | Impact of singly occupied molecular orbital energy on the n-doping efficiency of benzimidazole derivatives | |
| Welsh et al. | Borane incorporation in a non-fullerene acceptor to tune steric and electronic properties and improve organic solar cell performance | |
| Sathiyan et al. | Dicyanovinylene and thiazolo [5, 4-d] thiazole core containing d–A–D type hole-transporting materials for Spiro-OMeTAD-Free perovskite solar cell applications with superior atmospheric stability | |
| KR20140128297A (ko) | 유기 전자 소자 | |
| Kang et al. | p-Doped conducting polyelectrolyte as an anode interlayer enables high efficiency for 1 cm2 printed organic solar cells | |
| KR101948777B1 (ko) | 유기 정공 수송체들의 ｐ-도핑 가교 | |
| Bin et al. | Stable organic radicals as hole injection dopants for efficient optoelectronics | |
| Bin et al. | Organic radicals outperform LiF as efficient electron-injection materials for organic light-emitting diodes | |
| CN107210364B (zh) | 氨基磷腈碱作为有机电子产品中的n型掺杂剂 | |
| Molina et al. | Molecularly engineered low-cost organic hole-transporting materials for perovskite solar cells: the substituent effect on non-fused three-dimensional systems | |
| US20190393438A1 (en) | Organic Electron-Conducting Layer Having N-Dopant | |
| US10361376B2 (en) | Proazaphosphatranes as n-dopants in organic electronics | |
| WO2013055410A9 (en) | N-doping of organic semiconductors by bis-metallosandwich compounds | |
| Chen et al. | Improving the Performance of Layer-by-Layer Organic Solar Cells by n-Doping of the Acceptor Layer |