JP5788140B2 - 平面正方形遷移金属錯体の使用 - Google Patents

平面正方形遷移金属錯体の使用 Download PDF

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Publication number
JP5788140B2
JP5788140B2 JP2009511417A JP2009511417A JP5788140B2 JP 5788140 B2 JP5788140 B2 JP 5788140B2 JP 2009511417 A JP2009511417 A JP 2009511417A JP 2009511417 A JP2009511417 A JP 2009511417A JP 5788140 B2 JP5788140 B2 JP 5788140B2
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group
doped
transition metal
formula
organic semiconductor
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JP2009537676A (ja
JP2009537676A5 (enExample
Inventor
ザイカ，オラフ
ダーテ，レネ
ヴィルマン，シュテッフェン
ヴェルナー，アンスガー
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ノヴァレッド・アクチエンゲゼルシャフト
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2009511417A 2006-05-24 2007-05-24 平面正方形遷移金属錯体の使用 Active JP5788140B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06010719.0 2006-05-24
EP06010719A EP1860709B1 (de) 2006-05-24 2006-05-24 Verwendung von quadratisch planaren Übergangsmetallkomplexen als Dotand
PCT/EP2007/004638 WO2007134873A1 (de) 2006-05-24 2007-05-24 Verwendung von quadratisch planaren übergangsmetallkomplexen als dotand

Publications (3)

Publication Number Publication Date
JP2009537676A JP2009537676A (ja) 2009-10-29
JP2009537676A5 JP2009537676A5 (enExample) 2015-07-16
JP5788140B2 true JP5788140B2 (ja) 2015-09-30

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JP2009511417A Active JP5788140B2 (ja) 2006-05-24 2007-05-24 平面正方形遷移金属錯体の使用

Country Status (5)

Country Link
US (1) US9722190B2 (enExample)
EP (1) EP1860709B1 (enExample)
JP (1) JP5788140B2 (enExample)
KR (1) KR20090024722A (enExample)
WO (1) WO2007134873A1 (enExample)

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DE102007028236A1 (de) * 2007-06-20 2009-01-02 Siemens Ag Halbleitendes Material und organische Gleichrichterdiode
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DE102008051737B4 (de) 2007-10-24 2022-10-06 Novaled Gmbh Quadratisch planare Übergangsmetallkomplexe, organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente, die diese umfassen und Verwendung derselben
DE102008011185A1 (de) * 2008-02-27 2009-09-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer dotierten organischen halbleitenden Schicht
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
US8119037B2 (en) * 2008-10-16 2012-02-21 Novaled Ag Square planar transition metal complexes and organic semiconductive materials using them as well as electronic or optoelectric components
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
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EP3002797B1 (en) * 2014-09-30 2020-04-29 Novaled GmbH A light emitting organic device and an active OLED display
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US11778907B2 (en) 2017-04-13 2023-10-03 Merck Patent Gmbh Composition for organic electronic devices
US12098157B2 (en) 2017-06-23 2024-09-24 Universal Display Corporation Organic electroluminescent materials and devices
KR20240110060A (ko) 2017-06-26 2024-07-12 메르크 파텐트 게엠베하 균질 혼합물
CN110832053B (zh) 2017-07-05 2024-06-04 默克专利有限公司 用于有机电子器件的组合物
KR102594782B1 (ko) 2017-07-05 2023-10-27 메르크 파텐트 게엠베하 유기 전자 디바이스용 조성물
EP3462516A1 (en) * 2017-10-02 2019-04-03 Novaled GmbH Electronic device and method for preparing the same
TWI785142B (zh) 2017-11-14 2022-12-01 德商麥克專利有限公司 用於有機電子裝置之組成物
KR102804818B1 (ko) 2018-05-30 2025-05-09 메르크 파텐트 게엠베하 유기 전자 디바이스용 조성물
US20220127286A1 (en) 2019-03-04 2022-04-28 Merck Patent Gmbh Ligands for nano-sized materials

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Also Published As

Publication number Publication date
KR20090024722A (ko) 2009-03-09
US20100044683A1 (en) 2010-02-25
JP2009537676A (ja) 2009-10-29
US9722190B2 (en) 2017-08-01
EP1860709B1 (de) 2012-08-08
WO2007134873A1 (de) 2007-11-29
EP1860709A1 (de) 2007-11-28

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