JP2009528969A - 高品質単層カーボンナノチューブ成長の方法および装置 - Google Patents
高品質単層カーボンナノチューブ成長の方法および装置 Download PDFInfo
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- 229910052713 technetium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
アヴェティック・ハルチュンヤン
本発明は、単層カーボンナノチューブ成長の方法および工程を提供する。一態様において、炭素前駆ガスと担体上に担持した金属触媒とを、金属−炭素相の共晶点(液相)付近の反応温度に加熱する。さらに、反応温度を金属触媒の融点より低いものとする。
金属ナノ粒子の粒度および粒径は、不動態化溶媒中に適当な濃度の金属を用いることで、また熱分解温度で反応を進行させる時間の長さを制御することによって、制御可能である。約0.01nm〜約20nm、より好ましくは約0.1nm〜約3nm、最も好ましくは約0.3nm〜2nmの粒径を有する金属ナノ粒子を調製することができる。従って金属ナノ粒子の粒径を0.1、1、2、3、4、5、6、7、8、9または10nm、最大約20nmとすることができる。別の態様において、金属ナノ粒子はある範囲の粒径を有していてもよい。例えば金属ナノ粒子は、約3nm〜約7nm、約5nm〜約10nm、または約8nm〜約16nmの範囲の粒径を有していてもよい。あるいは金属ナノ粒子は、約0.5nm〜約20nm、好ましくは約1nm〜約15nm、より好ましくは約1nm〜約5nmの粒径分布を有していてもよい。従って、金属ナノ粒子は約1、2、3、4、5、6、7、8、9、10、11、12、13、14または15nmの粒径分布を有していてもよい。
Claims (26)
- 炭素前駆ガスを、触媒の融点未満かつ触媒の共晶点より約5℃〜約150℃高い温度で、担体に担持された触媒に接触させ、単層カーボンナノチューブ(SWNT)を形成するステップ
を含むSWNTを調製する化学蒸着法。 - 前記炭素前駆ガスがメタンであることを特徴とする請求項1に記載の方法。
- 前記炭素前駆ガスが不活性ガスおよび水素をさらに含むことを特徴とする請求項2に記載の方法。
- 前記不活性ガスがアルゴン、ヘリウム、窒素、水素またはそれらの混合物であることを特徴とする請求項3に記載の方法。
- 前記触媒が鉄、モリブデンまたはそれらの混合物であることを特徴とする請求項1に記載の方法。
- 前記触媒の粒径が1nm〜10nmであることを特徴とする請求項1に記載の方法。
- 前記触媒の粒径が約1nmであることを特徴とする請求項6に記載の方法。
- 前記触媒の粒径が約3nmであることを特徴とする請求項6に記載の方法。
- 前記触媒の粒径が約5nmであることを特徴とする請求項6に記載の方法。
- 前記担体がAl2O3、SiO3、MgOおよびゼオライトからなる群より選ばれる粉末酸化物であることを特徴とする請求項6に記載の方法。
- 前記粉末酸化物がAl2O3であることを特徴とする請求項10に記載の方法。
- 前記温度が共晶点より約10℃〜約100℃高いことを特徴とする請求項1に記載の方法。
- 前記温度が共晶点より約50℃高いことを特徴とする請求項1に記載の方法。
- 前記温度が共晶点より約80℃高いことを特徴とする請求項13に記載の方法。
- 前記SWNTの直径が約0.8nm〜約2nmであることを特徴とする請求項1に記載の方法。
- 炭素前駆ガスを、Al2O3、SiO3、MgOおよびゼオライトからなる群より選ばれる担体上の触媒に接触させ;そして
触媒の融点と触媒の共晶点との間の反応温度を維持する
工程によって製造される単層カーボンナノチューブ(SWNT)。 - 前記炭素前駆ガスがメタンであることを特徴とする請求項16に記載の工程。
- 前記炭素前駆ガスが不活性ガスおよび水素をさらに含むことを特徴とする請求項17に記載の工程。
- 前記不活性ガスがアルゴン、ヘリウム、窒素、水素またはそれらの混合物であることを特徴とする請求項18に記載の工程。
- 前記触媒が鉄、モリブデンまたはそれらの混合物であることを特徴とする請求項16に記載の工程。
- 前記触媒の粒径が1nm〜10nmであることを特徴とする請求項16に記載の工程。
- 前記粉末酸化物がAl2O3であることを特徴とする請求項16に記載の工程。
- 前記触媒と前記担体の比が約1:1〜約1:50であることを特徴とする請求項16に記載の工程。
- 前記温度が共晶点より約10℃〜約100℃高いことを特徴とする請求項16に記載の工程。
- 前記温度が共晶点より約50℃高いことを特徴とする請求項16に記載の工程。
- 前記温度が共晶点より約80℃高いことを特徴とする請求項16に記載の工程。
Applications Claiming Priority (3)
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US76381306P | 2006-01-30 | 2006-01-30 | |
US60/763,813 | 2006-01-30 | ||
PCT/US2007/002513 WO2008016388A2 (en) | 2006-01-30 | 2007-01-30 | Method and apparatus for growth of high quality carbon single-walled nanotubes |
Publications (3)
Publication Number | Publication Date |
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JP2009528969A true JP2009528969A (ja) | 2009-08-13 |
JP2009528969A5 JP2009528969A5 (ja) | 2010-03-18 |
JP5550833B2 JP5550833B2 (ja) | 2014-07-16 |
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JP2008552497A Expired - Fee Related JP5550833B2 (ja) | 2006-01-30 | 2007-01-30 | 高品質単層カーボンナノチューブ成長の方法および装置 |
Country Status (3)
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US (1) | US20080279753A1 (ja) |
JP (1) | JP5550833B2 (ja) |
WO (1) | WO2008016388A2 (ja) |
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