JP2009526408A - 材料、単位工程および工程順序のコンビナトリアル変化のための方法およびシステム - Google Patents
材料、単位工程および工程順序のコンビナトリアル変化のための方法およびシステム Download PDFInfo
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Abstract
Description
1.露出した誘電体表面から有機および金属性の汚染を取り除く洗浄剤を提供する:
2.露出した銅表面から酸化銅および汚染を取り除く洗浄剤および/または還元剤を提供する:
3.基板の誘電体部分上にマスキング層を形成する湿式、機能化および/または有機コーティング剤を提供する:
4.コバルト含有膜の無電解めっきのための多成分(コバルト含有剤、遷移金属コーティング剤、還元剤、pH調整剤、海面活性剤、湿式剤、DI水、DMAB、TMAHなどを含むがこれらに限定されない)のめっき化学反応を提供して生じさせる:
5.誘電体領域上に形成されたコバルト粒子やその他の不要な汚染など、過剰なめっき材料が、マスキング層の削除によって取り除かれることによって、犠牲的なマスキング層を取り除くめっき後のエッチングおよび/または清浄剤を提供する:
6.汚染および/またはコバルト粒子などの過剰なめっき材料をキャッピング層から取り除く清浄後の液剤を提供する:
7.領域を洗い流す:および
8.領域を乾燥する、などの例を含む。
1.露出した誘電体表面から有機および金属性の汚染を取り除く洗浄剤を提供する:
2.露出した銅表面から酸化銅および汚染を取り除く洗浄剤および/または還元剤を提供する:
3.露出した誘電体表面の露出した孔を実質的に満たすおよび/または密閉するように、露出した誘電体表面上の分子が自己配列した層から、湿式、機能化および/またはコーティング剤を選択的に提供する:
4.露出した銅表面から汚染および/または残留物(ステップ3の結果)を取り除く洗浄剤を提供する:
5.領域を洗い流す:
6.領域を乾燥させる:および
7.例えば、熱、UV、IRなどの加工後の処置を実施することを含む。
Claims (23)
- デバイスを製造する材料、単位工程および工程順序を評価する方法であって、
材料、単位工程または工程順序のうちの1つを変化させることによって、コンビナトリアル方式で第1の基板上の領域を処理することと、
該第1の基板上の該処理された領域を試験することと、
該第1の基板の該処理された領域の該試験の結果に基づいて、単位工程または工程順序のうちの1つを変化させることによって、コンビナトリアル方式で第2の基板上の領域を処理することと、
該第2の基板上の該処理された領域を試験することと
を包含する、方法。 - 材料、単位工程または工程順序のうちの1つを変化させることによって、コンビナトリアル方式で第3の基板上の領域を処理することと、該第3の基板上の該処理された領域を試験することとをさらに包含する、請求項1に記載の方法。
- 前記第1の基板はブランケットウエハであり、前記第2の基板はパターンウエハである、請求項1に記載の方法。
- 前記第1の基板および第2の基板はパターン付きであって、該第2の基板の該パターンは、該第1の基板の該パターンから少なくとも1つの構造を組み入れる、請求項1に記載の方法。
- 前記処理することは、市販の半導体チップ上の構造と相関する前記第2の基板の前記領域上に構造を形成する、請求項1に記載の方法。
- 前記第2の基板上の構造は、前記第1の基板上の構造よりも、市販のデバイスの構造と密接に関連し、該第2の基板上の前記処理された領域を試験することは、市販のデバイスの臨界パラメータに基づく、請求項1に記載の方法。
- 前記第2の基板上の前記処理された領域の試験結果は、前記第1の基板上の処理を向上させるようにフィードバックされる、請求項1に記載の方法。
- 処理は前記領域内で均一である、請求項1に記載の方法。
- それぞれの基板上の前記領域は重なり合うが、該領域のそれぞれについての部分は実質的に均一である、請求項1に記載の方法。
- 前記領域の処理はそれぞれの異なる領域にわたって均一であるため、該それぞれの異なる領域からの試験結果は前記変化の結果である、請求項1に記載の方法。
- 前記第3の基板上に形成された構造の電気的試験は、該形成された構造がデバイスパラメータを満たすかどうかを判断する、請求項2に記載の方法。
- 製造作業のための材料、単位工程および工程順序を評価する方法であって、
該製造作業の単位工程を変化させることによって、コンビナトリアル方式で第1の基板上の領域を処理することと、
該第1の基板上の該処理された領域を試験することと、
該第1の基板上の該処理された領域の該試験の結果に基づいて、該製造作業の工程順序を変化させることによって、コンビナトリアル方式で第2の基板上の領域を処理することと、
該第2の基板上の該処理された領域を試験することと
を包含する、方法。 - 前記第2の基板上の前記処理された領域を試験するときに実施される試験は、前記第1の基板上の前記処理された領域を試験するときに実施される試験よりも高度である、請求項12に記載の方法。
- 前記第1の基板上の領域を処理するときに構造を形成することと、
前記第2の基板上の領域を処理するときに構造を形成することと
をさらに包含し、該第2の基板上の領域を処理するときに形成される該構造は、該第1の基板上の領域を処理するとき形成される該構造よりも市販の構造に類似している、請求項12に記載の方法。 - コンビナトリアル方式で前記第1の基板上の領域を処理するために選択される材料は、グラジエントまたはサイト分離コンビナトリアルの工程のうちの1つを利用する事前のコンビナトリアルスクリーニングの結果である、請求項12に記載の方法。
- 製造工程順序のために工程順序統合を実施する方法であって、
基板の領域間で変化した工程順序のうちの1つの工程を備える製造工程順序を実施することを包含し、該領域のそれぞれに構造を形成するために使用される工程は局部的な均一性を有する、方法。 - 前記実施することは、
前記製造工程順序を構成する製造単位工程を識別することと、
該識別された半導体製造単位工程のために第1の工程順序の順番を選択することと、
該識別された製造単位工程のうちの1つをコンビナトリアル式に変化させながら、該第1の工程順序の順番を実行することと、
該識別された製造単位工程のうちの1つによって形成される該構造の特性を評価することと
を含む、請求項16に記載の方法。 - 前記特性の前記評価に基づいて、第2の工程順序の順番を選択することと、
前記変化の前記実行と該第2の工程順序の順番での前記評価とを繰り返すこととをさらに包含する、請求項17に記載の方法。 - 前記第1の工程順序を実行しながら、前記識別された製造単位工程のうちの1つをコンビナトリアル式に変化させることは、
前記基板の個別の領域の前記構造を形成する材料を変更することを含む、請求項17に記載の方法。 - 前記第1の工程順序を実行しながら、前記識別された製造単位工程のうちの1つをコンビナトリアル式に変化させることは、
前記基板の領域において、該識別された製造単位工程のうちの1つに対する工程パラメータを変更することを含む、請求項17に記載の方法。 - 前記第1の工程順序を実行しながら、前記識別された製造単位工程のうちの1つをコンビナトリアル式に変化させることは、
前記基板の領域において、該識別された製造単位工程のうちの1つの順序の順番を変化させることを含む、請求項17に記載の方法。 - 前記構造のそれぞれを試験することと、
該試験の結果に基づいて固定された前記工程順序の順番の工程、および変化した該工程順序の順番の別の工程によって前記実施を繰り返すことと
をさらに包含する、請求項16に記載の方法。 - 前記工程の前記局部的な均一性によって、統計関連情報は、1つの領域における複数の構造のうちの1つにわたって、または複数の領域にわたって収集することが可能になる、請求項16に記載の方法。
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US11/352,077 | 2006-02-10 | ||
US11/352,077 US8084400B2 (en) | 2005-10-11 | 2006-02-10 | Methods for discretized processing and process sequence integration of regions of a substrate |
US11/419,174 | 2006-05-18 | ||
US11/419,174 US8772772B2 (en) | 2006-05-18 | 2006-05-18 | System and method for increasing productivity of combinatorial screening |
PCT/US2007/003710 WO2007095194A2 (en) | 2006-02-10 | 2007-02-12 | Method and apparatus for combinatorially varying materials, unit process and process sequence |
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US20030186501A1 (en) * | 2002-03-26 | 2003-10-02 | Rueger Neal R. | Methods of forming semiconductor constructions |
JP2005150061A (ja) * | 2003-11-20 | 2005-06-09 | Showa Shinku:Kk | 有機材料薄膜の形成方法及びその装置 |
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JP5284108B2 (ja) | 2013-09-11 |
WO2007095194A3 (en) | 2008-11-20 |
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US20070202610A1 (en) | 2007-08-30 |
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