JP2009521332A5 - - Google Patents

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Publication number
JP2009521332A5
JP2009521332A5 JP2008536478A JP2008536478A JP2009521332A5 JP 2009521332 A5 JP2009521332 A5 JP 2009521332A5 JP 2008536478 A JP2008536478 A JP 2008536478A JP 2008536478 A JP2008536478 A JP 2008536478A JP 2009521332 A5 JP2009521332 A5 JP 2009521332A5
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JP
Japan
Prior art keywords
gap
nano gap
shows
protein
nano
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JP2008536478A
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JP2009521332A (ja
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Priority claimed from KR1020060072981A external-priority patent/KR100849384B1/ko
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Priority claimed from PCT/KR2006/003517 external-priority patent/WO2007046582A1/en
Publication of JP2009521332A publication Critical patent/JP2009521332A/ja
Publication of JP2009521332A5 publication Critical patent/JP2009521332A5/ja
Pending legal-status Critical Current

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本発明の一実施例に係るナノギャップセンサの製造工程を示す概略順序図である。 本発明の方法に係るナノギャップセンサの製作のためのシリコンの厚さとマスクパターンの幅によるギャップサイズ（幅）の設定を数学的に説明するための図である。 本発明の一実施例によってナノギャップセンサを製作する各工程の段階を示す断面図である。 酸化工程によるナノギャップ上の二酸化珪素（ＳｉＯ２）の形成を説明するための図である。 酸化工程の後にギャップの大きさが減少した様子を示す図である。 本発明のナノギャップ製造方法によって得られたナノギャップの電子顕微鏡写真である。 図６に示したナノギャップにおけるギャップの大きさを示す電子顕微鏡写真である。 本発明の方法によって製造されるナノギャップにおいて酸化工程の処理前と後のギャップサイズの差異を比較することが可能なナノギャップの電子顕微鏡写真である。 本発明によって製造されたナノギャップセンサに抗体を付着させて抗原を検出する状態を示す概略図である。 センサ適用実験結果を示すグラフである。

Claims (1)

  1. 前記リンカーが、Ｎ末端にシステインがタグされたタンパク質Ｇ、または前記タンパク質Ｇの抗体結合領域を含むタンパク質Ｇの断片である、請求項３８に記載のナノギャップセンサ。
JP2008536478A 2005-10-21 2006-09-05 ナノギャップおよびナノギャップセンサの製造方法 Pending JP2009521332A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20050099585 2005-10-21
KR1020060072981A KR100849384B1 (ko) 2005-10-21 2006-08-02 나노갭 및 나노갭 센서의 제조방법
PCT/KR2006/003517 WO2007046582A1 (en) 2005-10-21 2006-09-05 A method for fabricating nanogap and nanogap sensor

Publications (2)

Publication Number Publication Date
JP2009521332A JP2009521332A (ja) 2009-06-04
JP2009521332A5 true JP2009521332A5 (ja) 2009-07-23

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JP2008536478A Pending JP2009521332A (ja) 2005-10-21 2006-09-05 ナノギャップおよびナノギャップセンサの製造方法

Country Status (4)

Country Link
US (1) US8557567B2 (ja)
JP (1) JP2009521332A (ja)
KR (1) KR100849384B1 (ja)
CN (1) CN101156228B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101518733B1 (ko) 2008-11-27 2015-05-11 삼성전자주식회사 노즐 플레이트 및 그 제조방법
US20110020966A1 (en) * 2009-07-23 2011-01-27 Canon Kabushiki Kaisha Method for processing silicon substrate and method for producing substrate for liquid ejecting head
US8468872B2 (en) * 2009-12-29 2013-06-25 Industry-Academic Cooperation Foundation, Yonsei University Hydrogen sensor and method of manufacturing the same
KR101130084B1 (ko) * 2010-04-28 2012-03-28 연세대학교 산학협력단 수소 센서 및 그 제조방법
KR101067557B1 (ko) 2009-12-29 2011-09-27 연세대학교 산학협력단 수소 센서 및 그 제조방법
US9194838B2 (en) 2010-03-03 2015-11-24 Osaka University Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide
KR20110138657A (ko) * 2010-06-21 2011-12-28 (주)미코바이오메드 표면 플라즈몬 공명 센서 모듈 및 이를 포함한 센싱 시스템
KR101694549B1 (ko) * 2010-10-21 2017-01-09 (주)미코바이오메드 나노 갭 패턴 형성 방법, 나노 갭 패턴을 갖는 바이오 센서 및 바이오 센서 제조 방법
CN104583767B (zh) 2012-08-17 2017-10-27 量子生物有限公司 试样的分析方法
KR101878747B1 (ko) 2012-11-05 2018-07-16 삼성전자주식회사 나노갭 소자 및 이로부터의 신호를 처리하는 방법
KR101927415B1 (ko) 2012-11-05 2019-03-07 삼성전자주식회사 나노갭 소자 및 이로부터의 신호를 처리하는 방법
JP6282036B2 (ja) 2012-12-27 2018-02-21 クオンタムバイオシステムズ株式会社 物質の移動速度の制御方法および制御装置
WO2015042200A1 (en) 2013-09-18 2015-03-26 Osaka University Biomolecule sequencing devices, systems and methods
JP2015077652A (ja) 2013-10-16 2015-04-23 クオンタムバイオシステムズ株式会社 ナノギャップ電極およびその製造方法
US10438811B1 (en) 2014-04-15 2019-10-08 Quantum Biosystems Inc. Methods for forming nano-gap electrodes for use in nanosensors
US9343569B2 (en) 2014-05-21 2016-05-17 International Business Machines Corporation Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate
CN106796196A (zh) * 2014-07-11 2017-05-31 牛津大学科技创新有限公司 用于在石墨烯中形成纳米间隙的方法
DE102015211392B4 (de) * 2015-06-19 2018-05-24 Albert-Ludwigs-Universität Freiburg Elektrodenstruktur und Verfahren zum Herstellen der Elektrodenstruktur und Biosensor-Chip die Elektrodenstruktur umfassend
US10247700B2 (en) 2015-10-30 2019-04-02 International Business Machines Corporation Embedded noble metal electrodes in microfluidics
US11673136B2 (en) * 2017-04-04 2023-06-13 Arizona Board Of Regents On Behalf Of Arizona State University Nanopore devices for sensing biomolecules
US11740226B2 (en) 2017-10-13 2023-08-29 Analog Devices International Unlimited Company Designs and fabrication of nanogap sensors
EP3793721A4 (en) 2018-05-17 2022-07-20 Recognition Analytix, Inc. DEVICE, SYSTEM AND METHOD FOR DIRECT ELECTRICAL MEASUREMENT OF ENZYME ACTIVITY
CN112639466A (zh) * 2018-09-14 2021-04-09 应用材料公司 形成纳米孔的方法及生成的结构
MX2022010514A (es) 2020-02-28 2022-09-21 Univ Arizona State Metodos de secuenciacion de biopolimeros.

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207369B1 (en) * 1995-03-10 2001-03-27 Meso Scale Technologies, Llc Multi-array, multi-specific electrochemiluminescence testing
WO1998035012A2 (en) * 1997-02-12 1998-08-13 Chan Eugene Y Methods and products for analyzing polymers
JP3794461B2 (ja) 1999-04-30 2006-07-05 日本電信電話株式会社 電子結晶あるいは正孔結晶
JP2000315785A (ja) * 1999-04-30 2000-11-14 Canon Inc ナノ構造体の製造方法及びナノ構造体デバイス
WO2000078668A1 (en) * 1999-06-22 2000-12-28 President And Fellows Of Harvard College Control of solid state dimensional features
WO2001039292A2 (en) * 1999-11-29 2001-05-31 Trustees Of The University Of Pennsylvania Fabrication of nanometer size gaps on an electrode
US7001792B2 (en) * 2000-04-24 2006-02-21 Eagle Research & Development, Llc Ultra-fast nucleic acid sequencing device and a method for making and using the same
US8232582B2 (en) * 2000-04-24 2012-07-31 Life Technologies Corporation Ultra-fast nucleic acid sequencing device and a method for making and using the same
US7291284B2 (en) * 2000-05-26 2007-11-06 Northwestern University Fabrication of sub-50 nm solid-state nanostructures based on nanolithography
US7148058B2 (en) * 2000-06-05 2006-12-12 Chiron Corporation Protein microarrays on mirrored surfaces for performing proteomic analyses
KR20030052665A (ko) * 2001-12-21 2003-06-27 주식회사 하이닉스반도체 나노 크기의 스페이스 패턴 형성 방법
DE10204690A1 (de) 2002-02-06 2003-08-07 Clariant Gmbh Verfahren zur Herstellung synergistischer Stabilisatormischungen
US7005264B2 (en) * 2002-05-20 2006-02-28 Intel Corporation Method and apparatus for nucleic acid sequencing and identification
EP1366860B1 (en) 2002-05-28 2005-03-23 Asia Pacific Microsystem, Inc. Non-destructive method for measuring the thickness of a bonded wafer
WO2004077503A2 (en) 2003-02-03 2004-09-10 President And Fellows Of Harvard College Controlled fabrication of gaps in electrically conducting structures
JP3787630B2 (ja) * 2003-02-14 2006-06-21 独立行政法人情報通信研究機構 ナノギャップ電極の製造方法
NL1022855C2 (nl) 2003-03-05 2004-09-07 Univ Delft Tech Werkwijze en inrichting voor het gecontroleerd vervaardigen van openingen op nanometerschaal.
US7172917B2 (en) * 2003-04-17 2007-02-06 Robert Bosch Gmbh Method of making a nanogap for variable capacitive elements, and device having a nanogap
JP3864229B2 (ja) * 2003-08-29 2006-12-27 独立行政法人産業技術総合研究所 ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を有する素子
EP2381255A1 (en) * 2003-09-25 2011-10-26 Toyama Prefecture Microwell array chip and its manufacturing method
US7851203B2 (en) * 2003-10-01 2010-12-14 Lawrence Livermore National Security, Llc Functionalized apertures for the detection of chemical and biological materials
KR100561908B1 (ko) * 2003-12-26 2006-03-20 한국전자통신연구원 센서 구조체 및 그 제조방법
JP2005278916A (ja) * 2004-03-30 2005-10-13 Sanyo Product Co Ltd 遊技機
US20080025875A1 (en) * 2004-09-29 2008-01-31 Martin Charles R Chemical, Particle, and Biosensing with Nanotechnology
US20060073489A1 (en) * 2004-10-05 2006-04-06 Gangqiang Li Nanopore separation devices and methods of using same
KR100679704B1 (ko) * 2005-01-10 2007-02-06 한국과학기술원 분자소자와 바이오 센서를 위한 나노갭 또는 나노 전계효과 트랜지스터 제작방법
US7947485B2 (en) * 2005-06-03 2011-05-24 Hewlett-Packard Development Company, L.P. Method and apparatus for molecular analysis using nanoelectronic circuits
TW200700038A (en) * 2005-06-27 2007-01-01 Chieh Shang Co Ltd Inflatable air cushion
US7410762B1 (en) * 2005-06-27 2008-08-12 Sandia Corporation Method for detecting biomolecules
US8860438B2 (en) * 2009-05-11 2014-10-14 Clemson University Research Foundation Electrical double layer capacitive devices and methods of using same for sequencing polymers and detecting analytes
KR200457140Y1 (ko) 2010-01-22 2011-12-06 (주)파트론정밀 전자기기용 플랙시블 플레이트 케이블 커넥터

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