JP2009516393A - 表面処理された金属酸化物粒子を含む誘電媒体 - Google Patents

表面処理された金属酸化物粒子を含む誘電媒体 Download PDF

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Publication number
JP2009516393A
JP2009516393A JP2008541256A JP2008541256A JP2009516393A JP 2009516393 A JP2009516393 A JP 2009516393A JP 2008541256 A JP2008541256 A JP 2008541256A JP 2008541256 A JP2008541256 A JP 2008541256A JP 2009516393 A JP2009516393 A JP 2009516393A
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JP
Japan
Prior art keywords
electronic device
metal oxide
group
curable composition
dispersion
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JP2008541256A
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English (en)
Japanese (ja)
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JP2009516393A5 (OSRAM
Inventor
イー． ネイピーララ，マーク
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3M Innovative Properties Co
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3M Innovative Properties Co
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Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2009516393A publication Critical patent/JP2009516393A/ja
Publication of JP2009516393A5 publication Critical patent/JP2009516393A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Ceramic Capacitors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2008541256A 2005-11-18 2006-11-14 表面処理された金属酸化物粒子を含む誘電媒体 Withdrawn JP2009516393A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/282,923 US7498662B2 (en) 2005-11-18 2005-11-18 Dielectric media including surface-treated metal oxide particles
PCT/US2006/044055 WO2007061669A1 (en) 2005-11-18 2006-11-14 Dielectric media including surface-treated metal oxide particles

Publications (2)

Publication Number Publication Date
JP2009516393A true JP2009516393A (ja) 2009-04-16
JP2009516393A5 JP2009516393A5 (OSRAM) 2010-01-07

Family

ID=38052603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008541256A Withdrawn JP2009516393A (ja) 2005-11-18 2006-11-14 表面処理された金属酸化物粒子を含む誘電媒体

Country Status (5)

Country Link
US (1) US7498662B2 (OSRAM)
EP (1) EP1952429A1 (OSRAM)
JP (1) JP2009516393A (OSRAM)
CN (1) CN101310368B (OSRAM)
WO (1) WO2007061669A1 (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7765265B1 (en) 2005-05-11 2010-07-27 Aol Inc. Identifying users sharing common characteristics
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
US8164087B2 (en) * 2006-06-12 2012-04-24 Alcatel Lucent Organic semiconductor compositions with nanoparticles
WO2009005972A1 (en) * 2007-06-29 2009-01-08 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
TWI412125B (zh) * 2007-07-17 2013-10-11 Creator Technology Bv 電子元件及電子元件之製法
KR101622420B1 (ko) * 2008-05-30 2016-05-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 실릴에티닐 펜타센 화합물 및 조성물 및 그의 제조 및 사용 방법
US8017471B2 (en) * 2008-08-06 2011-09-13 International Business Machines Corporation Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry
KR101040320B1 (ko) * 2008-08-29 2011-06-10 고려대학교 산학협력단 절연막 및 절연막의 제조 방법
DE102009016659A1 (de) 2008-09-23 2010-06-24 Siemens Aktiengesellschaft Ankergruppe für Monolagen organischer Verbindungen auf Metall und damit hergestelltes Bauelement auf Basis organischer Elektronik
JP5722884B2 (ja) 2009-05-29 2015-05-27 スリーエム イノベイティブ プロパティズ カンパニー フッ素化シリルエチニルペンタセン化合物及び組成物、並びにその製造及び使用方法
DE102009037691A1 (de) * 2009-08-17 2011-03-03 Siemens Aktiengesellschaft Dielektrische Schutzschicht für eine selbstorganisierende Monolage (SAM)
EP2548210B1 (en) * 2010-03-17 2024-07-31 The Secretary of State For Defence Improvements in dielectrics
JP6034613B2 (ja) * 2012-07-31 2016-11-30 第一工業製薬株式会社 無機化合物微粒子分散組成物の製造方法および無機化合物微粒子分散硬化物の製造方法
KR102570397B1 (ko) * 2016-05-11 2023-08-24 삼성디스플레이 주식회사 유기 박막 트랜지스터 및 그 제조 방법
CN107722557A (zh) * 2016-08-12 2018-02-23 深圳先进技术研究院 一种超薄电容材料及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329058B1 (en) 1998-07-30 2001-12-11 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
GB9927431D0 (en) * 1999-11-22 2000-01-19 Ciba Sc Holding Ag Casting resin and process for the fabrication of resin molds
WO2001047043A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processed devices
EP1195417B1 (de) * 2000-10-05 2009-10-14 Evonik Degussa GmbH Siliciumorganische Nanokapseln
EP1231637A3 (en) 2001-02-08 2004-08-25 Hitachi, Ltd. High dielectric constant composite material and multilayer wiring board using the same
JP4188091B2 (ja) * 2001-05-15 2008-11-26 イー インク コーポレイション 電気泳動粒子
US20040180988A1 (en) 2003-03-11 2004-09-16 Bernius Mark T. High dielectric constant composites
US7098525B2 (en) 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
DE60326121D1 (de) 2003-05-20 2009-03-26 Dsm Ip Assets Bv Verfahren zur Herstellung von Nanostrukturierten Oberflächenbeschichtungen, deren Beschichtungen und Gegenständen enthaltend die Beschichtung
US20050095448A1 (en) 2003-11-04 2005-05-05 Katz Howard E. Layer incorporating particles with a high dielectric constant

Also Published As

Publication number Publication date
US7498662B2 (en) 2009-03-03
CN101310368B (zh) 2011-08-31
EP1952429A1 (en) 2008-08-06
US20070114516A1 (en) 2007-05-24
WO2007061669A1 (en) 2007-05-31
CN101310368A (zh) 2008-11-19

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