JP2009514187A - 集積回路デバイス内の相互接続構造体 - Google Patents
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- 239000000463 material Substances 0.000 claims abstract description 148
- 238000000034 method Methods 0.000 claims abstract description 77
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 239000003989 dielectric material Substances 0.000 claims abstract description 42
- 238000003384 imaging method Methods 0.000 claims abstract description 40
- 230000009977 dual effect Effects 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 13
- 239000006117 anti-reflective coating Substances 0.000 claims description 10
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229920000412 polyarylene Polymers 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- QXTKWWMLNUQOLB-UHFFFAOYSA-N (4-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=C([N+]([O-])=O)C=C1 QXTKWWMLNUQOLB-UHFFFAOYSA-N 0.000 claims description 6
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- -1 cyclic olefin Chemical class 0.000 claims description 5
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000004721 Polyphenylene oxide Substances 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims 1
- 150000003457 sulfones Chemical class 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000011229 interlayer Substances 0.000 abstract description 5
- 238000001459 lithography Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 110
- 239000010408 film Substances 0.000 description 20
- 238000001020 plasma etching Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000013459 approach Methods 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000013043 chemical agent Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004971 Cross linker Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007171 acid catalysis Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XCCCHWWMLSAIOH-UHFFFAOYSA-N anthracen-1-ylmethanol Chemical compound C1=CC=C2C=C3C(CO)=CC=CC3=CC2=C1 XCCCHWWMLSAIOH-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
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Abstract
【解決手段】 本発明は、集積回路デバイス内のデュアル・ダマシン相互接続構造体の製造に関する。具体的には、平坦化材料及び拡散障壁材料を用いて、低kの誘電体薄膜内にシングル又はデュアル・ダマシン構造体を形成するための方法が開示される。この方法の好ましいデュアル・ダマシンの実施形態において、最初に誘電体材料にビアを形成し、次にビア内及び誘電体材料上に平坦化材料を付着させ、平坦化材料上に障壁材料を付着させる。次に、リソグラフィにより像形成材料にトレンチが形成され、障壁材料を通して平坦化材料がエッチングされ、トレンチ・パターンが誘電体材料に転写される。これらのエッチング・ステップの過程の間及び該エッチング・ステップの過程に続いて、像形成材料、障壁材料及び平坦化材料が除去される。次に、結果として得られるデュアル・ダマシン構造を金属化することができる。この方法を用いる場合、層間誘電体材料によるフォトレジスト汚染の問題が軽減される。
【選択図】 図6
Description
Claims (19)
- 半導体基板上にエッチング・パターンを形成する方法であって、基板上に薄膜を付着させるステップと、前記薄膜上に平坦化材料の層を付着させるステップと、前記平坦化材料層上に障壁材料の層を付着させるステップと、前記障壁材料層上に少なくとも1つの像形成材料の層を付着させるステップと、前記像形成材料層、前記障壁材料層及び前記平坦化材料層に少なくとも1つの第1のパターン形状を形成するステップと、前記平坦化材料に前記第1のパターン形状を形成した後又は該平坦化材料に該第1のパターン形状を形成すると同時に、前記像形成材料を除去するステップと、前記第1のパターン形状を前記薄膜に転写するステップと、前記第1のパターン形状を前記薄膜に転写した後又は該第1のパターン形状を該薄膜に転写すると同時に、前記障壁層を除去するステップと、前記平坦化材料を除去するステップとを含むことを特徴とする方法。
- 少なくとも1つのパターン形成された導体を含む半導体基板上にデュアル・ダマシン相互接続構造体を形成する方法であって、前記基板上に誘電体材料を付着させるステップと、前記誘電体材料に少なくとも1つのビアを、前記少なくとも1つのビアが前記パターン化された導体の上に位置させられるように形成するステップと、前記誘電体材料上及び前記ビア内に平坦化材料の層を付着させるステップと、前記平坦化材料層上に障壁材料の層を付着させるステップと、前記障壁材料層上に少なくとも1つの像形成材料の層を付着させるステップと、前記像形成材料層、前記障壁材料層及び前記平坦化材料層に少なくとも1つのトレンチを、前記少なくとも1つのトレンチが前記ビアの上に位置させられるように形成するステップと、前記平坦化材料に前記トレンチを形成した後又は該平坦化材料に該トレンチを形成すると同時に、前記像形成材料を除去するステップと、前記少なくとも1つのトレンチを前記誘電体材料に転写し、該少なくとも1つのトレンチが前記ビアの上に位置させられるようにするステップと、前記少なくとも1つのトレンチを前記誘電体材料に転写した後又は該少なくとも1つのトレンチを該誘電体材料に転写すると同時に、前記障壁材料を除去するステップと、前記平坦化材料を除去するステップとを含むことを特徴とする方法。
- 少なくとも1つのパターン形成された導体を含む半導体基板上にデュアル・ダマシン相互接続構造体を形成する方法であって、前記基板上に誘電体材料を付着させるステップと、前記誘電体材料に少なくとも1つのトレンチを、前記少なくとも1つのトレンチが前記パターン化された導体の上に位置させられるように形成するステップと、前記誘電体材料上及び前記トレンチ内に平坦化材料の層を付着させるステップと、前記平坦化材料層上に障壁材料の層を付着させるステップと、前記障壁材料層上に少なくとも1つの像形成材料の層を付着させるステップと、前記像形成材料層、前記障壁材料層及び前記平坦化材料層に少なくとも1つのビアを、前記少なくとも1つビアが前記トレンチの上に位置させられるように形成するステップと、前記平坦化材料に前記ビアを形成した後又は該平坦化材料内に該ビアを形成すると同時に、前記像形成材料を除去するステップと、前記少なくとも1つのビアを前記誘電体材料に転写し、該少なくとも1つのビアが前記トレンチ及び前記パターン形成された導体の上に位置させられるようにするステップと、前記少なくとも1つのビアを前記誘電体材料に転写した後又は該少なくとも1つのビアを該誘電体材料に転写すると同時に、前記障壁材料を除去するステップと、前記平坦化材料を除去するステップとを含むことを特徴とする方法。
- 前記平坦化材料層を付着させる前に、前記薄膜内に少なくとも1つの第2のパターン形状を形成し、前記平坦化材料で前記第2のパターン形状を充填する、請求項1に記載の方法。
- 前記薄膜が誘電体材料である、請求項1に記載の方法。
- 前記誘電体材料が低kの誘電体材料である、請求項2、請求項3又は請求項5に記載の方法。
- 低kの誘電体材料が3.9より小さい誘電率を有する、請求項6に記載の方法。
- 低kの誘電体材料が約3.2より小さい誘電率を有する、請求項6に記載の方法。
- 前記平坦化材料が、ポリ(4−ヒドロキシスチレン)、9−アントラセニルメチル化ポリ(ヒドロキシスチレン)、テトラヒドロ−1,3,4,6−テトラキス(メトキシメチル)−イミダゾ[4,5−d]イミダゾール−2,5−(1H,3H)−ジオン、及びp−ニトロベンジル・トシラート(pNBT)を含むポリ(ヒドロキシスチレン)ベースの系である、請求項1から請求項8までのいずれか1項に記載の方法。
- 前記平坦化材料が、ポリアリルスルフォン、ポリヒドロキシスチレン・ベースの誘導体、ポリイミド、ポリエーテル、ポリアリレンスルフィド、ポリカーボネート、エポキシ、エポキシアクリレート、ポリアリレン、ポリアリレンビニレン、ポリビニルカルバゾール、環状オレフィン、及びポリエステルからなる群から選択される、請求項1から請求項9までのいずれか1項に記載の方法。
- 前記障壁材料が、約100℃から約225℃までの温度でプラズマ化学気相付着法によって付着される二酸化シリコンを含む、請求項1から請求項10までのいずれか1項に記載の方法。
- 前記障壁材料が、約150℃の温度でプラズマ化学気相付着法によって付着される、請求項11に記載の方法。
- 前記障壁材料は、シリコン、窒化シリコン、炭化シリコン、窒化チタン、及び窒化タンタルからなる群から選択される材料を含む、請求項1から請求項12までのいずれか1項に記載の方法。
- 前記像形成材料層を付着させる前に、前記障壁材料上に反射防止コーティングの層を付着させるステップと、前記平坦化材料に前記トレンチ又はビアを形成した後又は該平坦化材料に該トレンチ又はビアを形成すると同時に、前記反射防止コーティングを除去するステップとをさらに含む、請求項2又は請求項3に記載の方法。
- 前記像形成材料、前記障壁材料、及び前記平坦化材料を除去した後、前記第1のパターン形状を導電性材料で充填するステップをさらに含む、請求項2又は請求項3に記載の方法。
- 前記導電性材料が銅を含む、請求項15に記載の方法。
- 前記低kの誘電体材料が、化学気相付着法によって付着されるSiCOHである、請求項6に記載の方法。
- 前記平坦化材料を付着させた後、約200℃から約250℃までの温度で該平坦化材料をベーキングするステップをさらに含む、請求項9に記載の方法。
- 前記平坦化材料を付着させた後、約225℃の温度で該平坦化材料をベーキングするステップをさらに含む、請求項9に記載の方法。
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US10/604,056 US7030031B2 (en) | 2003-06-24 | 2003-06-24 | Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material |
PCT/EP2004/051131 WO2004114396A1 (en) | 2003-06-24 | 2004-06-16 | Interconnect structures in integrated circuit devices |
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IL172668A0 (en) | 2006-04-10 |
US7326651B2 (en) | 2008-02-05 |
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EP1639635A1 (en) | 2006-03-29 |
US20050079701A1 (en) | 2005-04-14 |
WO2004114396A1 (en) | 2004-12-29 |
TW200511432A (en) | 2005-03-16 |
JP4763600B2 (ja) | 2011-08-31 |
EP1639635B1 (en) | 2012-08-08 |
CN100456447C (zh) | 2009-01-28 |
KR100754320B1 (ko) | 2007-09-03 |
TWI335053B (en) | 2010-12-21 |
US7030031B2 (en) | 2006-04-18 |
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