JP2009506200A5 - - Google Patents
Info
- Publication number
- JP2009506200A5 JP2009506200A5 JP2008526067A JP2008526067A JP2009506200A5 JP 2009506200 A5 JP2009506200 A5 JP 2009506200A5 JP 2008526067 A JP2008526067 A JP 2008526067A JP 2008526067 A JP2008526067 A JP 2008526067A JP 2009506200 A5 JP2009506200 A5 JP 2009506200A5
- Authority
- JP
- Japan
- Prior art keywords
- reflector
- thin film
- film layer
- shadow mask
- deposition substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims 8
- 230000008021 deposition Effects 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 239000011364 vaporized material Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000004907 flux Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000003116 impacting effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/201,587 US7615501B2 (en) | 2005-08-11 | 2005-08-11 | Method for making a thin film layer |
| PCT/US2006/030067 WO2007021544A2 (en) | 2005-08-11 | 2006-08-02 | Method for making a thin film layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009506200A JP2009506200A (ja) | 2009-02-12 |
| JP2009506200A5 true JP2009506200A5 (enExample) | 2009-09-17 |
Family
ID=37742820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008526067A Withdrawn JP2009506200A (ja) | 2005-08-11 | 2006-08-02 | 薄膜層の作成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7615501B2 (enExample) |
| EP (1) | EP1922433A2 (enExample) |
| JP (1) | JP2009506200A (enExample) |
| CN (1) | CN101287856B (enExample) |
| WO (1) | WO2007021544A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034419B2 (en) | 2004-06-30 | 2011-10-11 | General Electric Company | Method for making a graded barrier coating |
| US20090110892A1 (en) * | 2004-06-30 | 2009-04-30 | General Electric Company | System and method for making a graded barrier coating |
| US8293323B2 (en) * | 2007-02-23 | 2012-10-23 | The Penn State Research Foundation | Thin metal film conductors and their manufacture |
| US7884316B1 (en) | 2007-03-21 | 2011-02-08 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillator device |
| US7829857B2 (en) * | 2008-04-17 | 2010-11-09 | Menge Peter R | Radiation detector device |
| KR100994118B1 (ko) * | 2009-01-13 | 2010-11-15 | 삼성모바일디스플레이주식회사 | 유기 발광 소자 및 그 제조 방법 |
| US8629523B2 (en) * | 2010-04-16 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inserted reflective shield to improve quantum efficiency of image sensors |
| KR101846364B1 (ko) * | 2011-07-29 | 2018-04-09 | 엘지이노텍 주식회사 | 광소자 패키지 및 그 제조 방법 |
| JP2013115098A (ja) * | 2011-11-25 | 2013-06-10 | Sony Corp | トランジスタ、トランジスタの製造方法、表示装置および電子機器 |
| CN105821375A (zh) * | 2012-01-12 | 2016-08-03 | 大日本印刷株式会社 | 蒸镀掩模的制造方法及有机半导体元件的制造方法 |
| US9056432B2 (en) * | 2012-04-25 | 2015-06-16 | Johnson & Johnson Vision Care, Inc. | High-density mask for three-dimensional substrates and methods for making the same |
| CN105453298B (zh) * | 2013-08-19 | 2018-07-27 | 乐金显示有限公司 | 包括有机材料掩模的层压体以及使用其的有机发光装置的制造方法 |
| KR102399575B1 (ko) * | 2014-09-26 | 2022-05-19 | 삼성디스플레이 주식회사 | 증착 위치 정밀도 검사장치 및 그것을 이용한 증착 위치 정밀도 검사방법 |
| CN117894856A (zh) | 2020-04-26 | 2024-04-16 | 隆基绿能科技股份有限公司 | 一种太阳能电池金属电极及其制备方法 |
| CN117230411B (zh) * | 2023-06-29 | 2025-07-29 | 安徽熙泰智能科技有限公司 | 一种薄膜沉积装置及其沉积方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3678889A (en) | 1970-02-06 | 1972-07-25 | Tokyo Shibaura Electric Co | Reflector assembly for reflecting the vapors of high temperature volatile materials |
| US4022928A (en) | 1975-05-22 | 1977-05-10 | Piwcyzk Bernhard P | Vacuum deposition methods and masking structure |
| JPS62136566A (ja) | 1985-12-09 | 1987-06-19 | Hitachi Maxell Ltd | 蒸着方法ならびに蒸着装置 |
| JPH04365852A (ja) | 1991-06-12 | 1992-12-17 | Hitachi Ltd | イオンビームミキシング方法およびその装置 |
| US5366764A (en) | 1992-06-15 | 1994-11-22 | Sunthankar Mandar B | Environmentally safe methods and apparatus for depositing and/or reclaiming a metal or semi-conductor material using sublimation |
| JPH0853763A (ja) | 1994-06-06 | 1996-02-27 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法 |
| JPH08199345A (ja) | 1995-01-30 | 1996-08-06 | Mitsubishi Electric Corp | 成膜装置及び成膜方法 |
| US5554220A (en) | 1995-05-19 | 1996-09-10 | The Trustees Of Princeton University | Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities |
| GB9711237D0 (en) | 1997-06-02 | 1997-07-23 | Isis Innovation | Organomettallic Complexes |
| US6242115B1 (en) | 1997-09-08 | 2001-06-05 | The University Of Southern California | OLEDs containing thermally stable asymmetric charge carrier materials |
| US6030715A (en) | 1997-10-09 | 2000-02-29 | The University Of Southern California | Azlactone-related dopants in the emissive layer of an OLED |
| US6150043A (en) | 1998-04-10 | 2000-11-21 | The Trustees Of Princeton University | OLEDs containing thermally stable glassy organic hole transporting materials |
| GB9820805D0 (en) | 1998-09-25 | 1998-11-18 | Isis Innovation | Divalent lanthanide metal complexes |
| JP2000195673A (ja) | 1998-12-25 | 2000-07-14 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び発光素子 |
| EP2306495B1 (en) | 1999-05-13 | 2017-04-19 | The Trustees of Princeton University | Very high efficiency organic light emitting devices based on electrophosphorescence |
| US6716656B2 (en) * | 2001-09-04 | 2004-04-06 | The Trustees Of Princeton University | Self-aligned hybrid deposition |
| SG114589A1 (en) | 2001-12-12 | 2005-09-28 | Semiconductor Energy Lab | Film formation apparatus and film formation method and cleaning method |
| JP2003183834A (ja) | 2001-12-20 | 2003-07-03 | Toshiba Mach Co Ltd | 気相成長装置用の反射板 |
| US6897164B2 (en) | 2002-02-14 | 2005-05-24 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US20030151118A1 (en) | 2002-02-14 | 2003-08-14 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US6667215B2 (en) | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
| US20030230238A1 (en) | 2002-06-03 | 2003-12-18 | Fotios Papadimitrakopoulos | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
| JP2004055401A (ja) | 2002-07-22 | 2004-02-19 | Sony Corp | 有機膜形成装置 |
| US6890627B2 (en) | 2002-08-02 | 2005-05-10 | Eastman Kodak Company | Laser thermal transfer from a donor element containing a hole-transporting layer |
| RU2242532C1 (ru) * | 2003-09-09 | 2004-12-20 | Гуревич Сергей Александрович | Способ получения наночастиц |
| US7232694B2 (en) * | 2004-09-28 | 2007-06-19 | Advantech Global, Ltd. | System and method for active array temperature sensing and cooling |
| US7833834B2 (en) | 2004-09-30 | 2010-11-16 | Sharp Kabushiki Kaisha | Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source |
| JP4924038B2 (ja) * | 2004-11-02 | 2012-04-25 | 旭硝子株式会社 | フルオロカーボン膜の製造方法 |
| US7271094B2 (en) * | 2004-11-23 | 2007-09-18 | Advantech Global, Ltd | Multiple shadow mask structure for deposition shadow mask protection and method of making and using same |
-
2005
- 2005-08-11 US US11/201,587 patent/US7615501B2/en not_active Expired - Fee Related
-
2006
- 2006-08-02 WO PCT/US2006/030067 patent/WO2007021544A2/en not_active Ceased
- 2006-08-02 EP EP06789179A patent/EP1922433A2/en not_active Withdrawn
- 2006-08-02 JP JP2008526067A patent/JP2009506200A/ja not_active Withdrawn
- 2006-08-02 CN CN2006800295228A patent/CN101287856B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009506200A5 (enExample) | ||
| WO2011090262A3 (ko) | 경사 증착을 이용한 리소그래피 방법 | |
| JP2008163457A5 (ja) | 成膜装置 | |
| JP2008293963A5 (enExample) | ||
| JP2020045571A5 (enExample) | ||
| JP2009539252A5 (enExample) | ||
| JP2010082857A5 (enExample) | ||
| KR101988115B1 (ko) | 마이크로 오엘이디 제조용 원형 면소스, 및 이를 구비한 원형 면소스 증착장치 | |
| JP2010540651A5 (enExample) | ||
| JP2011515650A5 (enExample) | ||
| KR930005110A (ko) | 집적회로 제조시 재료를 증착시키는 개선된 방법 | |
| JP2008518480A5 (enExample) | ||
| TW200746441A (en) | Manufacturing method of thin film transistor and thin film transistor, and display | |
| TWI335356B (en) | Apparatus and method for depositing thin films | |
| TW201435110A (zh) | 蒸鍍遮罩的製造方法,及有機半導體元件的製造方法 | |
| JP2011012948A5 (enExample) | ||
| JP2004340932A5 (enExample) | ||
| CN109306448A (zh) | 掩膜组件、蒸镀装置、蒸镀方法、阵列基板及显示面板 | |
| JP2014505369A5 (enExample) | ||
| FR2915493B1 (fr) | Procede pour realiser un depot sur un substrat recouvert de sic | |
| WO2008105266A1 (ja) | 電子線リソグラフィー用レジスト下層膜形成組成物 | |
| WO2007021544A3 (en) | Method for making a thin film layer | |
| JP2015518085A5 (enExample) | ||
| BR0308562A (pt) | Composição de revestimento de substrato metálico | |
| WO2008008750A3 (en) | Resonant infrared laser-assisted nanoparticle transfer and applications of same |