CN101287856B - 制造薄膜层的方法 - Google Patents

制造薄膜层的方法 Download PDF

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Publication number
CN101287856B
CN101287856B CN2006800295228A CN200680029522A CN101287856B CN 101287856 B CN101287856 B CN 101287856B CN 2006800295228 A CN2006800295228 A CN 2006800295228A CN 200680029522 A CN200680029522 A CN 200680029522A CN 101287856 B CN101287856 B CN 101287856B
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CN
China
Prior art keywords
shadow mask
reverberator
layer
substrate
deposition substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2006800295228A
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English (en)
Chinese (zh)
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CN101287856A (zh
Inventor
迈克尔·A·哈斯
保罗·F·博德
埃里克·W·黑默施
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
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Publication of CN101287856A publication Critical patent/CN101287856A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
CN2006800295228A 2005-08-11 2006-08-02 制造薄膜层的方法 Expired - Fee Related CN101287856B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/201,587 US7615501B2 (en) 2005-08-11 2005-08-11 Method for making a thin film layer
US11/201,587 2005-08-11
PCT/US2006/030067 WO2007021544A2 (en) 2005-08-11 2006-08-02 Method for making a thin film layer

Publications (2)

Publication Number Publication Date
CN101287856A CN101287856A (zh) 2008-10-15
CN101287856B true CN101287856B (zh) 2012-07-18

Family

ID=37742820

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800295228A Expired - Fee Related CN101287856B (zh) 2005-08-11 2006-08-02 制造薄膜层的方法

Country Status (5)

Country Link
US (1) US7615501B2 (enExample)
EP (1) EP1922433A2 (enExample)
JP (1) JP2009506200A (enExample)
CN (1) CN101287856B (enExample)
WO (1) WO2007021544A2 (enExample)

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US8034419B2 (en) 2004-06-30 2011-10-11 General Electric Company Method for making a graded barrier coating
US20090110892A1 (en) * 2004-06-30 2009-04-30 General Electric Company System and method for making a graded barrier coating
US8293323B2 (en) * 2007-02-23 2012-10-23 The Penn State Research Foundation Thin metal film conductors and their manufacture
US7884316B1 (en) 2007-03-21 2011-02-08 Saint-Gobain Ceramics & Plastics, Inc. Scintillator device
US7829857B2 (en) * 2008-04-17 2010-11-09 Menge Peter R Radiation detector device
KR100994118B1 (ko) * 2009-01-13 2010-11-15 삼성모바일디스플레이주식회사 유기 발광 소자 및 그 제조 방법
US8629523B2 (en) * 2010-04-16 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Inserted reflective shield to improve quantum efficiency of image sensors
KR101846364B1 (ko) * 2011-07-29 2018-04-09 엘지이노텍 주식회사 광소자 패키지 및 그 제조 방법
JP2013115098A (ja) * 2011-11-25 2013-06-10 Sony Corp トランジスタ、トランジスタの製造方法、表示装置および電子機器
CN105821375A (zh) * 2012-01-12 2016-08-03 大日本印刷株式会社 蒸镀掩模的制造方法及有机半导体元件的制造方法
US9056432B2 (en) * 2012-04-25 2015-06-16 Johnson & Johnson Vision Care, Inc. High-density mask for three-dimensional substrates and methods for making the same
CN105453298B (zh) * 2013-08-19 2018-07-27 乐金显示有限公司 包括有机材料掩模的层压体以及使用其的有机发光装置的制造方法
KR102399575B1 (ko) * 2014-09-26 2022-05-19 삼성디스플레이 주식회사 증착 위치 정밀도 검사장치 및 그것을 이용한 증착 위치 정밀도 검사방법
CN117894856A (zh) 2020-04-26 2024-04-16 隆基绿能科技股份有限公司 一种太阳能电池金属电极及其制备方法
CN117230411B (zh) * 2023-06-29 2025-07-29 安徽熙泰智能科技有限公司 一种薄膜沉积装置及其沉积方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
JPH04365852A (ja) 1991-06-12 1992-12-17 Hitachi Ltd イオンビームミキシング方法およびその装置

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JPS62136566A (ja) 1985-12-09 1987-06-19 Hitachi Maxell Ltd 蒸着方法ならびに蒸着装置
US5366764A (en) 1992-06-15 1994-11-22 Sunthankar Mandar B Environmentally safe methods and apparatus for depositing and/or reclaiming a metal or semi-conductor material using sublimation
JPH0853763A (ja) 1994-06-06 1996-02-27 Matsushita Electric Ind Co Ltd 薄膜の製造方法
JPH08199345A (ja) 1995-01-30 1996-08-06 Mitsubishi Electric Corp 成膜装置及び成膜方法
US5554220A (en) 1995-05-19 1996-09-10 The Trustees Of Princeton University Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
GB9711237D0 (en) 1997-06-02 1997-07-23 Isis Innovation Organomettallic Complexes
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JP2000195673A (ja) 1998-12-25 2000-07-14 Sanyo Electric Co Ltd 有機エレクトロルミネッセント素子及び発光素子
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US6667215B2 (en) 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
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JP4924038B2 (ja) * 2004-11-02 2012-04-25 旭硝子株式会社 フルオロカーボン膜の製造方法
US7271094B2 (en) * 2004-11-23 2007-09-18 Advantech Global, Ltd Multiple shadow mask structure for deposition shadow mask protection and method of making and using same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
JPH04365852A (ja) 1991-06-12 1992-12-17 Hitachi Ltd イオンビームミキシング方法およびその装置

Also Published As

Publication number Publication date
WO2007021544A3 (en) 2008-03-13
US7615501B2 (en) 2009-11-10
EP1922433A2 (en) 2008-05-21
WO2007021544A2 (en) 2007-02-22
US20070036887A1 (en) 2007-02-15
JP2009506200A (ja) 2009-02-12
CN101287856A (zh) 2008-10-15

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Granted publication date: 20120718

Termination date: 20170802