JP2009505941A - 太陽電池に用いられる光線透過率を最適化する被覆されたガラス物品及びその製造方法 - Google Patents
太陽電池に用いられる光線透過率を最適化する被覆されたガラス物品及びその製造方法 Download PDFInfo
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- 238000002834 transmittance Methods 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 44
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005457 optimization Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000001629 suppression Effects 0.000 claims description 6
- 239000005329 float glass Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000005816 glass manufacturing process Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 4
- 238000010030 laminating Methods 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 39
- 239000010409 thin film Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 47
- 239000007789 gas Substances 0.000 description 29
- 238000009826 distribution Methods 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 239000002243 precursor Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 229910006404 SnO 2 Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000007507 annealing of glass Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000006124 Pilkington process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 3
- 239000006060 molten glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
- Y10T428/12604—Film [e.g., glaze, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Surface Treatment Of Glass (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
Abstract
【解決手段】特に太陽電池の構成要素としての使用に適した、多層積層膜が、透明な絶縁性基板上に積層される。前記多層積層薄膜は、前記絶縁性基板上に積層された2.0未満の屈折率を有する透明な導電性金属酸化物層と、前記導電性金属酸化物層上に積層された2.3〜3.5の屈折率を有する光線透過率最適化中間層と、前記光線透過率最適化中間層上に積層された少なくとも4.5の屈折率を有するシリコン層とを含む。前記積層膜は、任意の適切な方法によって積層させることができるが、各層を大気圧化学気相積層によって積層させることが好ましい。
【選択図】なし
Description
Claims (22)
- 太陽電池の構成要素としての使用に適した被覆されたガラス物品であって、
透明な絶縁性基板と、
前記絶縁性基板上に積層された、2.0未満の屈折率を有する透明な導電性金属酸化物層と、
前記導電性金属酸化物層上に積層された、2.3〜3.5の屈折率を有する光線透過率最適化中間層と、
前記光線透過率最適化中間層上に積層された、少なくとも4.5の屈折率を有するシリコン層とを含む物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記導電性金属酸化物層は、フッ素ドープ金属酸化物を含むことを特徴とする物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記光線透過率最適化中間層は、金属酸化物層を含むことを特徴とする物品。 - 請求項3に記載の被覆されたガラス物品であって、
前記光線透過率最適化中間層は、チタン酸化物を含むことを特徴とする物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記シリコン層は、非晶質シリコンを含むことを特徴とする物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記絶縁性基板と前記導電性金属酸化物層との間に介挿された色抑制膜をさらに含むことを特徴とする物品。 - 請求項6に記載の被覆されたガラス物品であって、
前記色抑制膜は、単一の金属酸化物層、金属酸化物層とシリカ層、及び傾斜層から成る群より選択される1つを含むことを特徴とする物品。 - 請求項6に記載の被覆されたガラス物品であって、
前記色抑制膜は、250〜600Åの厚さを有する酸化スズ層と、250〜350Åの厚さを有するシリカ層とを含むことを特徴とする物品。 - 請求項4に記載の被覆されたガラス物品であって、
前記光線透過率最適化中間層は、300〜600Åの平均厚さを有するチタン酸化物層を含むことを特徴とする物品。 - 請求項9に記載の被覆されたガラス物品であって、
前記光線透過率最適化中間層は、450〜500Åの平均厚さを有するチタン酸化物層を含むことを特徴とする物品。 - 請求項2に記載の被覆されたガラス物品であって、
前記導電性金属酸化物層は、5000〜7500Åの厚さを有するフッ素ドープ酸化スズを含むことを特徴とする物品。 - 請求項3に記載の被覆されたガラス物品であって、
前記光線透過率最適化中間層は、2.3〜3.0の屈折率を有することを特徴とする物品。 - 請求項2に記載の被覆されたガラス物品であって、
前記導電性金属酸化物層は、3000〜5500Åの厚さを有するフッ素ドープ酸化スズを含むことを特徴とする物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記シリコン層は、少なくとも5.0の屈折率を有することを特徴とする物品。 - 請求項1に記載の被覆されたガラス物品であって、
前記導電性金属酸化物層は、スズドープ酸化インジウムを含むことを特徴とする物品。 - 太陽電池の構成要素としての使用に適した被覆された物品の製造方法であって、
加熱された絶縁性基板を提供するステップと、
前記絶縁性基板上に、2.0未満の屈折率を有する透明な導電性金属酸化物層を積層させるステップと、
前記導電性金属酸化物層上に、2.3〜3.5の屈折率を有する光線透過率最適化中間層を積層させるステップと、
前記光線透過率最適化中間層上に、少なくとも4.5の屈折率を有するシリコン層を積層させるステップとを含む方法。 - 請求項16に記載の方法であって、
各層は、フロートガラス製造プロセス中にオンラインで積層されることを特徴とする方法。 - 請求項16に記載の方法であって、
各層は、大気圧化学気相成長法によって積層されることを特徴とする方法。 - 太陽電池の構成要素としての使用に適した被覆されたガラス物品であって、
透明な絶縁性基板と、
前記絶縁性基板上に積層された、2.0未満の屈折率を有する透明な導電性金属酸化物層と、
前記導電性金属酸化物層上に積層された、2.3〜3.5の屈折率を有する光線透過率最適化中間層と、
前記光線透過率最適化中間層上に積層された、少なくとも4.5の屈折率を有するシリコン層とを含み、
5.2〜8.0のガラス面反射率を有することを特徴とする物品。 - 太陽電池の構成要素としての使用に適した被覆されたガラス物品であって、
透明な絶縁性基板と、
前記絶縁性基板上に積層された、2.0未満の屈折率を有する透明な導電性金属酸化物層と、
前記導電性金属酸化物層上に直接的に積層された、2.3〜3.5の屈折率を有する光線透過率最適化中間層と、
前記光線透過率最適化中間層上に積層された、少なくとも4.5の屈折率を有するシリコン層とを含むことを特徴とする物品。 - 太陽電池の構成要素としての使用に適した被覆されたガラス物品であって、
透明な絶縁性基板と、
前記絶縁性基板上に積層された、2.0未満の屈折率を有する透明な導電性金属酸化物層と、
前記金属酸化物層上に直接的に積層された、300〜600Åの厚さを有する、チタン酸化物を含む光線透過率最適化中間層と、
前記光線透過率最適化中間層上に積層された、少なくとも4.5の屈折率を有するシリコン層とを含むことを特徴とする物品。 - 太陽電池の構成要素としての使用に適した被覆されたガラス物品であって、
透明な絶縁性基板と、
前記絶縁性基板上に積層された、2.0未満の屈折率を有する透明な導電性金属酸化物層と、
前記金属酸化物層上に直接的に積層された、450〜500Åの厚さを有する、TiO2を含む光線透過率最適化中間層と、
前記光線透過率最適化中間層上に積層された、少なくとも4.5の屈折率を有するシリコン層とを含むことを特徴とする物品。
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Application Number | Priority Date | Filing Date | Title |
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US71246505P | 2005-08-30 | 2005-08-30 | |
US60/712,465 | 2005-08-30 | ||
PCT/US2006/033078 WO2007027498A1 (en) | 2005-08-30 | 2006-08-24 | Light transmittance optimizing coated glass article for solar cell and method for making |
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JP5270345B2 JP5270345B2 (ja) | 2013-08-21 |
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US (1) | US7968201B2 (ja) |
EP (1) | EP1929542A1 (ja) |
JP (1) | JP5270345B2 (ja) |
KR (1) | KR101252322B1 (ja) |
CN (1) | CN100555671C (ja) |
BR (1) | BRPI0614819A2 (ja) |
MY (1) | MY160173A (ja) |
RU (1) | RU2404485C9 (ja) |
WO (1) | WO2007027498A1 (ja) |
Cited By (3)
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CN101567396A (zh) * | 2009-05-27 | 2009-10-28 | 中国南玻集团股份有限公司 | 用于太阳能电池的透明导电基板 |
JP5554409B2 (ja) | 2010-06-21 | 2014-07-23 | 三菱電機株式会社 | 光電変換装置 |
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WO2015169331A1 (de) * | 2014-05-05 | 2015-11-12 | Masdar Pv Gmbh | Verfahren zum aufbringen von halbleitermaterial, halbleitermodul und substratherstellungsanlage |
US10133108B2 (en) | 2015-04-08 | 2018-11-20 | Guardian Glass, LLC | Vending machines with large area transparent touch electrode technology, and/or associated methods |
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CN112919825A (zh) * | 2021-02-08 | 2021-06-08 | 海控三鑫(蚌埠)新能源材料有限公司 | 一种双层镀膜光伏玻璃的在线降温装置 |
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- 2006-08-24 BR BRPI0614819-0A patent/BRPI0614819A2/pt not_active IP Right Cessation
- 2006-08-24 RU RU2008111986/28A patent/RU2404485C9/ru not_active IP Right Cessation
- 2006-08-24 EP EP06813706A patent/EP1929542A1/en not_active Withdrawn
- 2006-08-24 WO PCT/US2006/033078 patent/WO2007027498A1/en active Application Filing
- 2006-08-24 KR KR1020087005199A patent/KR101252322B1/ko not_active IP Right Cessation
- 2006-08-24 CN CNB2006800316544A patent/CN100555671C/zh not_active Expired - Fee Related
- 2006-08-24 MY MYPI20080146A patent/MY160173A/en unknown
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JP2012522265A (ja) * | 2009-03-27 | 2012-09-20 | ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド | 保護コーティングを有する太陽反射鏡及びその製造方法 |
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JP2016520876A (ja) * | 2013-05-31 | 2016-07-14 | ピルキントン グループ リミテッド | 電子素子のための界面層 |
Also Published As
Publication number | Publication date |
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RU2404485C2 (ru) | 2010-11-20 |
MY160173A (en) | 2017-02-28 |
RU2008111986A (ru) | 2009-10-10 |
KR20080051132A (ko) | 2008-06-10 |
RU2404485C9 (ru) | 2011-03-20 |
KR101252322B1 (ko) | 2013-04-08 |
EP1929542A1 (en) | 2008-06-11 |
US20090155619A1 (en) | 2009-06-18 |
CN100555671C (zh) | 2009-10-28 |
CN101253634A (zh) | 2008-08-27 |
BRPI0614819A2 (pt) | 2011-04-19 |
JP5270345B2 (ja) | 2013-08-21 |
WO2007027498A1 (en) | 2007-03-08 |
US7968201B2 (en) | 2011-06-28 |
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