JP2009504547A - 金属セラミック基板 - Google Patents
金属セラミック基板 Download PDFInfo
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Abstract
【選択図】図1
Description
・均一の酸化銅層を生成するための銅箔の酸化、
・セラミック層への銅箔を配置、
・およそ1025℃と1083℃の間、例えばおよそ1071℃の処理温度への合成物の加熱、
・室温への冷却。
1.1 測定用試料
2 セラミック材料
3,4 金属被覆
5 窒化シリコンセラミックの中間層
5,6 酸化セラミックの中間層
8,9 活性はんだ層
F 取り外される強度
dc 窒化シリコンセラミックの中間層の厚さ
dm 金属被覆を形成する金属層の厚さ
Claims (38)
- 多層の平板状セラミック材料(2)を含み、セラミック材料の表面上に備えられる少なくとも1つの金属被覆(3、4)を含み、前記金属被覆はダイレクトボンディング(DCB)または活性はんだ付により前記セラミック材料に接合され、前記セラミック材料(2)は少なくとも1つの窒化シリコンセラミックの中間層またはベース層(5)から成り、前記セラミック材料(2)の表面は少なくとも1つのベース層(5)に適用された酸化セラミックの中間層(6、7)から形成される少なくとも1つの金属被覆を備える金属セラミック基板であって、
前記酸化セラミックの少なくとも1つの中間層(6、7)は、6 × 10-6 K-1より小さいまたはより大きくない熱膨脹係数を有し、
前記少なくとも1つの中間層(6、7)を形成する前記酸化セラミック内の遊離した前記酸化シリコン(SiO2)の含有量は、少なくとも前記中間層(6、7)と前記金属被覆(3、4)との間の接合の領域において無視できる、
ことを特徴とする金属セラミック基板。 - 前記酸化セラミックの前記少なくとも1つの中間層(6、7)内の前記遊離した酸化シリコンの含有量は、少なくとも前記中間層と前記金属被覆(3、4)との間の前記接合領域においてゼロまたは約ゼロであることを特徴とする請求項1に記載の基板。
- 前記窒化シリコンセラミックの前記少なくとも1つのベース層(5)は、各表面上に前記酸化セラミックの少なくとも1つの中間層(6、7)を提供されることを特徴とする請求項1または2に記載の基板。
- 少なくとも1つの金属被覆(3、4)は、両方の中間層(6、7)に適用されることを特徴とする請求項3に記載の基板。
- 前記セラミック材料(2)は、前記セラミック層(5、6、7)の複合層および厚さに関して、前記セラミック材料の前記表面に平行に伸びる中心面に対称的であることを特徴とする請求項1ないし4のいずれか一項に記載の基板。
- 前記複合層および/または、前記セラミック層(5、6、7)および前記金属被覆(3、4)の厚さを含む前記層の厚さに関して、前記基板の前記表面に平行に伸びる中心面に対称的であることを特徴とする請求項1ないし5のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(7)に用いられた前記セラミック材料には、300GPa未満の弾性モジュールがあり、特に100〜300GPaの間の弾性モジュールがあることを特徴とする請求項1ないし6のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)の厚さは、前記中間層を支持する前記窒化シリコンセラミックの前記ベース層(5)の厚さ(dc)より著しく小さく、および/または前記少なくとも1つの金属被覆の厚さ(dm)より著しく小さいことを特徴とする請求項1ないし7のいずれか一項に記載の基板。
- 前記少なくとも1つの金属被覆(3、4)の厚さ(dm)は、前記窒化シリコンセラミックの前記ベース層(5)の厚さ(dc)の3倍を超えないことを特徴とする請求項1ないし8のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)の厚さは、0.1〜10μmの間にあることを特徴とする請求項1ないし9のいずれか一項に記載の基板。
- 前記窒化シリコンセラミックの前記少なくとも1つのベース層(5)の厚さ(dc)は、0.1〜2mmの間であることを特徴とする請求項1ないし10のいずれか一項に記載の基板。
- 前記少なくとも1つの金属被覆の厚さ(dm)は、0.5〜1mmの間であることを特徴とする請求項1ないし11のいずれか一項に記載の基板。
- 前記少なくとも1つの銅の金属被覆は、銅合金で作られていることを特徴とする請求項1ないし12のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)は、フォルステライト、コージライト、ムライト、または少なくともこれらの成分の2つの混合物もしくは組み合わせから成ることを特徴とする請求項1ないし13のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)の前記セラミックは、酸化アルミニウムセラミックを含むことを特徴とする請求項1ないし14のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)の前記セラミックは、特に少なくとも1つの希土類元素の形で、焼結手段を含んでいることを特徴とする請求項1ないし15のいずれか一項に記載の基板。
- 前記少なくとも1つの中間層(6、7)の前記セラミックは、焼結手段として、ホルミウム、エルビウム、イッテルビウム、イットリウム、ランタン、スカンジウム、プラセオジム、セリウム、ネオジム、ジスプロシウム、サマリウム、ガドリニウムの酸化物、またはこれらの酸化物の少なくとも2つの組み合わせを含むことを特徴とする請求項16に記載の基板。
- 前記焼結手段の含有量は、1.0〜8.0重量パーセントの間にあることを特徴とする請求項16または17に記載の基板。
- 前記少なくとも1つの中間層(6、7)の前記セラミックは、添加剤としてLi2O、TiO2、BaO、ZnO、B2O3、CsO、Fe2O3、ZrO2、CuO、Cu2Oのグループから少なくとも1つの酸化物の成分を含み、前記添加剤の含有量は、前記中間層の全質量の最大20重量パーセントをなすことを特徴とする請求項1ないし18のいずれか一項に記載の基板。
- 前記窒化シリコンセラミックの前記少なくとも1つの層には、45W/mKを超える熱伝導率があることを特徴とする請求項1ないし19のいずれか一項に記載の基板。
- 前記セラミック材料上の前記少なくとも1つの金属被覆(3、4)の接着材および剥離強度は、40N/cmより大きいことを特徴とする請求項1ないし20のいずれか一項に記載の基板。
- 活性はんだの少なくとも1つの層(8、9)は、前記少なくとも1つの中間層(6、7)と前記隣接する金属被覆(3、4)との間に備えられることを特徴とする請求項1ないし21のいずれか一項に記載の基板。
- 前記活性はんだは、はんだおよび活性金属(例えばチタン、ハフニウム、ジルコニウム、ニオブおよび/またはセリウム)として適切なベース成分から成ることを特徴とする請求項22に記載の基板。
- 前記基板の外部の寸法は、80×80mmより大きく、好ましくは100×150mmより大きいことを特徴とする請求項1ないし23のいずれか一項に記載の基板。
- 少なくとも1つの中間層または窒化シリコンセラミックのベース層(5)から成り、多層の平板状セラミック材料(2)の少なくとも1つの表面上に備えられる少なくとも1つの金属被覆(3、4)を含む多層の平板状セラミック材料(2)を含み、
前記少なくとも1つの金属被覆(3、4)を提供される前記少なくとも1つのベース層(5)上の前記セラミック材料(2)の表面上で酸化セラミックの中間層(6、7)が形成され、少なくとも1つの金属被覆(3、4)は、少なくとも1つの金属層またはフォイルのダイレクトボンディング(DCB)または活性はんだ付により前記中間層に適用される、金属セラミック基板を製造する方法であって、
酸化セラミックは、6 × 10-6 K-1より少ないまたはより大きくない熱膨脹係数により前記中間層(6、7)のために用いられ、その遊離したシリコン(SiO2)の含有量は、少なくとも前記中間層(6、7)と前記金属被覆(3、4)との間の前記接合領域において、または前記中間層(6、7)と前記金属被覆(3、4)との間のトランジションにおいて無視できる、
ことを特徴とする金属セラミック基板を製造する方法。 - 前記酸化セラミックの前記少なくとも中間層(6、7)と前記金属被覆(3、4)との間の前記接合領域において、または前記中間層(6、7)と前記金属被覆(3、4)との間のトランジションにおいて、前記遊離した酸化シリコン(SiO2)含有量が前記少なくとも1つの中間層(6、7)においてゼロまたは約ゼロであるように、前記中間層(6、7)が設計されていることを特徴とする請求項25に記載の方法。
- 前記少なくとも1つのベース層(5)は前記酸化セラミックの前記中間層(6、7)を各表面上に提供され、前記少なくとも1つの金属被覆(3、4)は各中間層(6、7)に適用されることを特徴とする請求項25または26に記載の方法。
- 前記少なくとも1つの中間層(6、7)は、前記窒化シリコンセラミックの前記ベース層(5)の厚さ(dc)より著しく小さく、および/または前記少なくとも1つの金属被覆の厚さ(dm)より著しく小さい厚さで製造されることを特徴とする請求項25ないし27のいずれか一項に記載の方法。
- 前記ベース層(5)の厚さ(dc)の最大3倍の厚さ(dm)である金属フォイルが、前記少なくとも1つの金属被覆(3、4)に用いられることを特徴とする請求項25ないし28のいずれか一項に記載の方法。
- 前記少なくとも1つの中間層(6、7)は、0.1〜10μmの間の厚さで製造されることを特徴とする請求項25ないし29のいずれか一項に記載の方法。
- フォルステライト、コージライト、ムライト、またはこれらの成分の少なくとも2つの混合物または組み合わせが、前記少なくとも1つの中間層(6、7)に用いられることを特徴とする請求項25ないし30のいずれか一項に記載の方法。
- 酸化アルミニウムセラミックを含むセラミックが、前記少なくとも1つの中間層(6、7)に用いられることを特徴とする請求項25ないし31のいずれか一項に記載の方法。
- 少なくとも1つの焼結手段を含んでいるセラミックが、特に少なくとも1つの希土類元素の形で、前記少なくとも1つの中間層(6、7)のために用いられ、特に前記焼結手段の含有量は1.0〜8.0重量パーセントの間にあることを特徴とする請求項25ないし32のいずれか一項に記載の方法。
- 添加剤としてLi2O、TiO2、BaO、ZnO、B2O3、CsO、Fe2O3、ZrO2、CuO、Cu2Oのグループからなる少なくとも1つの酸化物の成分を含んでいるセラミックが、前記少なくとも1つの中間層(6、7)に用いられ、前記添加剤の含有量は、前記中間層の全質量の最大20重量パーセントをなすことを特徴とする請求項25ないし33のいずれか一項に記載の方法。
- 前記ベース層(5)は、少なくとも1つの表面上で前記中間層(6、7)を形成するセラミック材料でコーティングされ、前記コーティングは1200〜1680℃の間の温度で溶融または濃密焼結させられることを特徴とする請求項25ないし34のいずれか一項に記載の方法。
- 前記溶融または濃密焼結は酸化物の雰囲気の中で生じることを特徴とする請求項35に記載の方法。
- 前記コーティングは、例えば水分散液またはゾルゲル法の、噴霧、液浸によって適用されることを特徴とする請求項35または36に記載の方法。
- 前記コーティングは、前記セラミック材料を含んでいるマイクロ分散からナノ分散混合物を使用して適用されることを特徴とする請求項35ないし37のいずれか一項に記載の方法。
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