JP2009260049A - Method for manufacturing electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic device, which can reduce costs of the electronic device and can improve yield of the electronic device regarding the method for manufacturing the electronic device. <P>SOLUTION: A metal member 61 consisting of first metal is formed on a substrate 14 of a part corresponding to a formation area of a connection member 16 by a wire bonding method, a metal layer 63 with a melting point lower than that of the first metal, and consisting of a second metal forming alloy with the first metal is formed on a wiring substrate 11 of the part corresponding to the formation area of the connection member 16, the wiring substrate 11 and the substrate 14 are arranged to be opposite to each other so that the metal member 61 contacts with the metal layer 63, the connection member 16 consisting of the alloy is formed by melting the metal layer 63 by heating, and the wiring substrate 11 is connected to the substrate 14 by the connection member 16. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electronic device, and in particular, two substrates disposed opposite to each other, a connection member that connects the two substrates, and an electronic component that is accommodated in a space formed by the two substrates and the connection member. The present invention relates to a method for manufacturing an electronic component comprising:

  2. Description of the Related Art Conventionally, there is an electronic device (see FIG. 1) that includes two substrates disposed opposite to each other, a connection member that connects the two substrates, and an electronic component that is accommodated in a space formed by the two substrates and the connection member. is there.

  FIG. 1 is a cross-sectional view of a conventional electronic device.

  Referring to FIG. 1, a conventional electronic device 200 includes a wiring board 201, a board 204, an Au—Sn solder 206 as a connection member, an electronic component 208, and an external connection terminal 209.

  The wiring substrate 201 is made of silicon, and is provided in the through hole 217 via the insulating film 219, a substrate main body 215 having a recess 216 and a through hole 217, an insulating film 219 that covers the surface of the substrate main body 215. A through electrode 221, a pad 223 connected to the upper end of the through electrode 221, an external connection pad 224 connected to the lower end of the through electrode 221, and an adhesion layer 225.

  The adhesion layer 225 is provided on a portion of the insulating film 219 corresponding to the formation region of the Au—Sn solder 206. The adhesion layer 225 has a structure in which a Ti layer 226, a Pt layer 227, and an Au layer 228 are sequentially stacked on an insulating film 219.

  The substrate 204 includes a plate body 231 made of silicon, an insulating film 232 that covers the surface of the plate body 231, and an adhesion layer 233.

  The adhesion layer 233 is provided on a portion of the insulating film 232 corresponding to the formation region of the Au—Sn solder 206. The adhesion layer 233 is configured such that a Ti layer 234, a Pt layer 235, and an Au layer 236 are sequentially stacked on an insulating film 232.

  The Au—Sn solder 206 is for connecting the wiring board 201 and the board 204. The Au—Sn solder 206 is disposed so as to hermetically seal the space 241 formed by the wiring substrate 201, the substrate 204, and the Au—Sn solder 206. The melting point of the Au—Sn solder 206 is 280 ° C. The thickness of the Au—Sn solder 206 can be set to 4 μm, for example.

  The electronic component 208 is disposed in the space 241 and mounted on the pad 223. As a result, the electronic component 208 is electrically connected to the wiring board 201. The electronic component 208 may be damaged when heated at a temperature of 300 ° C. or higher. The external connection terminal 209 is provided on the external connection pad 224.

  2 to 10 are diagrams showing a manufacturing process of a conventional electronic device. 2 to 10, the same components as those of the conventional electronic device 200 are denoted by the same reference numerals.

  First, in the step shown in FIG. 2, the wiring board 201 is formed by a known method. Next, in the process illustrated in FIG. 3, the adhesion layer 225 is formed by sequentially stacking the Ti layer 226, the Pt layer 227, and the Au layer 228 on the insulating film 219 by a sputtering method. Thereby, the wiring board 201 is manufactured.

  Next, in the process shown in FIG. 4, Au—Sn solder 241 (melting point is 280 degrees) is formed by plating so as to cover the upper surface of the Au layer 228. The Au—Sn solder 241 is a part of the Au—Sn solder 206 described above. The thickness of the Au—Sn solder 241 can be set to 2 μm, for example.

  Next, in the step shown in FIG. 5, the electronic component 208 is mounted on the pad 223. Next, in the process shown in FIG. 6, the insulating film 232 is formed so as to cover the surface of the plate body 231 made of silicon by a known method.

  Next, in the step shown in FIG. 7, the adhesion layer 233 is formed by sequentially laminating the Ti layer 234, the Pt layer 235, and the Au layer 236 on the insulating film 232 by sputtering. Thereby, the substrate 204 is manufactured.

  Next, in the process shown in FIG. 8, Au—Sn solder 242 (melting point is 280 degrees) is formed by plating so as to cover the upper surface of the Au layer 236. The Au—Sn solder 242 is a part of the Au—Sn solder 206 described above. The thickness of the Au—Sn solder 242 can be set to 2 μm, for example.

  Next, in the process shown in FIG. 9, the structure shown in FIG. 8 is arranged on the structure shown in FIG. 5 so that the Au—Sn solder 241 and the Au—Sn solder 242 come into contact with each other, and then Au—Sn. The structures shown in FIGS. 5 and 8 are heated at a temperature higher than the melting point 280 ° C. of the solders 241 and 242 (for example, 320 ° C.), thereby melting the Au—Sn solders 241 and 242 and thereby making the Au—Sn solder. 206 is formed to connect the wiring substrate 201 and the substrate 204. Thereby, the electronic component 208 is accommodated in the airtight space 241.

Next, in the step shown in FIG. 10, the external connection terminals 209 are formed on the external connection pads 224. Thereby, the conventional electronic device 200 is manufactured (for example, refer patent document 1).
JP 2002-110726 A

  However, in the conventional electronic device 200, since the Au—Sn solders 241 and 242 which are the base materials of the Au—Sn solder 206 are formed by the plating method, it takes a lot of time to form the Au—Sn solders 241 and 242. There is a problem that the manufacturing cost of the electronic device 200 increases. In particular, when it is desired to increase the thickness of the Au—Sn solder 206 which is a connection member, the above problem becomes significant.

  Further, when the Au—Sn solders 241 and 242 are melted, it is necessary to heat them at a high temperature (for example, 320 ° C.). Therefore, the pads 223, the through-electrodes 221, the external connection pads 224, and the pad electronics are affected by heat. There is a problem in that the component 208 is damaged, and the yield of the electronic device 200 decreases.

  Accordingly, the present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing an electronic device that can reduce the cost of the electronic device and improve the yield of the electronic device.

  According to an aspect of the present invention, the first substrate, the second substrate disposed opposite to the first substrate, the first and second substrates, and the first substrate are in contact with each other. An electronic device comprising: a connecting member that connects a substrate and the second substrate; a space formed by the first and second substrates and the connecting member; and an electronic component housed in the space A metal member forming step of forming a metal member made of a first metal by wire bonding on a portion of the first substrate corresponding to a region where the connection member is formed; and Forming a metal layer on a portion of the second substrate corresponding to a formation region, wherein a metal layer made of a second metal having a melting point lower than that of the first metal and forming an alloy with the first metal is formed. So that the metal member and the metal layer are in contact with each other The first substrate and the second substrate are disposed to face each other, and the metal member and the metal layer are heated at a temperature at which only the metal layer is melted to form the connection member made of the alloy, There is provided a method for manufacturing an electronic device, comprising: a substrate connecting step of connecting one substrate to the second substrate.

  According to the present invention, the conventional connection is achieved by forming the metal member (base material of the connection member) made of the first metal on the first substrate corresponding to the formation region of the connection member by the wire bonding method. Compared to the case where the Au—Sn solder as a member is formed by a plating method, the metal member can be formed in a short time, and thus the cost of the electronic device can be reduced. In addition, the thickness of the connecting member can be easily increased.

  In addition, the second substrate corresponding to the formation region of the connection member has a lower melting point than the first metal constituting the metal member, and a metal made of the second metal that forms an alloy with the first metal. Forming a layer, placing the first substrate and the second substrate facing each other so that the metal member and the metal layer are in contact with each other, and heating the metal member and the metal layer at a temperature at which only the metal layer melts; By forming a connection member made of and connecting the first substrate and the second substrate, a temperature at which Au-Sn solder (melting point: 280 ° C.), which is a conventional connection member, is melted (for example, 320 It is possible to connect the first substrate and the second substrate by heating at a temperature lower than (° C.) (for example, a temperature of 300 ° C. or lower).

  Thereby, the wiring pattern (for example, a pad, a penetration electrode, wiring, etc.) provided in the 1st board and / or the 2nd board by the influence of the heat at the time of connecting the 1st board and the 2nd board ) And electronic components are not damaged, and the yield of electronic devices can be improved.

  According to the present invention, the cost of the electronic device can be reduced and the yield of the electronic device can be improved.

  Next, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 11 is a cross-sectional view of the electronic device according to the first embodiment of the present invention.

  Referring to FIG. 11, the electronic device 10 of the first embodiment includes a wiring board 11 that is a second board, a board 14 that is a first board, a connection member 16, a space 18, and an electronic device. It has a component 19 and an external connection terminal 21.

  The wiring substrate 11 includes a substrate body 25, an insulating film 26, a through electrode 28, a pad 29, an external connection pad 31, and an adhesion layer 32.

  The substrate body 25 is plate-shaped and has a through hole 33. As a material of the substrate body 25, for example, silicon, glass, insulating resin (for example, glass epoxy resin), ceramic, or the like can be used.

  For example, when the material of the electronic component 19 is silicon, silicon may be used as the material of the substrate body 25. As a result, the difference in thermal expansion coefficient between the wiring board 11 and the electronic component 19 can be relaxed, so that the reliability of electrical connection between the wiring board 11 and the electronic component 19 can be improved. it can. When silicon is used as the material of the substrate body 25, the thickness of the substrate body 25 can be set to 200 μm, for example.

  In FIG. 1, the case where silicon is used as the material of the substrate body 25 is shown as an example. In the present embodiment, the following description is given by taking the case where silicon is used as the material of the substrate body 25 as an example. When glass, insulating resin (for example, glass epoxy resin), or ceramic is used as the material of the substrate body 25, the insulating film 26 is not necessary.

  The insulating film 26 is provided on the substrate body 25 so as to cover the surface of the substrate body 25 (including the surface of the substrate body 25 corresponding to the side surface of the through hole 33). As the insulating film 26, for example, an oxide film can be used. When an oxide film is used as the insulating film 26, the thickness of the insulating film 26 can be set to 1 μm, for example.

  The through electrode 28 is provided in the through hole 33 in which the insulating film 26 is formed. The upper end surface of the through electrode 28 is substantially flush with the surface 26A of the insulating film 26 (the surface of the insulating film 26 on the electronic component mounting side). The lower end surface of the through electrode 28 is substantially flush with the surface 26B of the insulating film 26 (the surface of the insulating film 26 on the side where the external connection terminals 21 are disposed). As a material of the through electrode 28, for example, Cu can be used.

  The pad 29 is provided on the surface 26 A of the insulating film 26 and the upper end surface of the through electrode 28. As a result, the pad 29 is connected to the through electrode 28. As a material of the pad 29, for example, Cu can be used.

  The external connection pad 31 is provided on the surface 26B of the insulating film 26 and the lower end surface of the through electrode 28. Thus, the external connection pad 31 is connected to the through electrode 28 and is electrically connected to the pad through the through electrode 28. As a material of the external connection pad 31, for example, Cu can be used.

  The adhesion layer 32 is provided on the surface 26A of the insulating film 26 so as to surround a region in which the electronic component 19 is accommodated. The adhesion layer 32 includes a Ti layer 35 (for example, thickness 0.1 μm), a Pt layer 36 (for example, thickness 0.2 μm), and an Au layer 37 (for example, thickness) on the surface 26A of the insulating film 26. 0.5 μm) are sequentially stacked.

  The substrate 14 is disposed above the wiring substrate 11 on which the electronic component 19 is mounted, and is connected to the wiring substrate 11 via the connection member 16. The substrate 14 includes a substrate body 39, an insulating film 41, and an adhesion layer 42.

  The substrate body 39 has a plate shape. As a material of the substrate body 39, for example, silicon, glass, insulating resin (for example, glass epoxy resin), ceramic, or the like can be used.

  For example, when silicon is used as the material of the substrate body 25, silicon is preferably used as the material of the substrate body 39. As a result, the difference in thermal expansion coefficient between the wiring board 11 and the board 14 can be relaxed, so that the connection reliability between the wiring board 11 and the board 14 can be improved. When silicon is used as the material of the substrate body 39, the thickness of the substrate body 39 can be set to 200 μm, for example.

  In FIG. 1, the case where silicon is used as the material of the substrate body 39 is shown as an example. In the present embodiment, the following description is given by taking the case where silicon is used as the material of the substrate body 39 as an example. When glass, insulating resin (for example, glass epoxy resin), or ceramic is used as the material of the substrate body 39, the insulating film 41 is not necessary.

  The insulating film 41 is formed on the substrate body 39 so as to cover the surface of the substrate body 39. As the insulating film 41, for example, an oxide film can be used. When an oxide film is used as the insulating film 41, the thickness of the insulating film 41 can be set to 1 μm, for example.

  The adhesion layer 42 is provided so as to cover the surface 41A of the insulating film 41 (the surface of the insulating film 41 on the side facing the wiring substrate 11). The adhesion layer 42 has a Ti layer 43 (for example, thickness 0.1 μm), a Pt layer 44 (for example, thickness 0.2 μm), and an Au layer 45 (for example, thickness 0) on the surface 41A of the insulating film 41. .5 μm) are sequentially laminated.

The connection member 16 is provided between the Au layer 37 and the Au layer 45 so as to be in contact with the Au layers 37 and 45. The connection member 16 is disposed so as to surround the electronic component 19. That is, the connection member 16 has a frame shape. The connection member 16 is a member for connecting the wiring substrate 11 and the substrate 14. As the connection member 16, an Au—In alloy (for example, AuIn ₂ (remelting temperature is 495 ° C.)), a Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)), an Ag—Sn alloy. (A remelting temperature is 600 degreeC), Ag-In alloy (remelting temperature is 880 degreeC), etc. can be used. When an Au—In alloy is used as the connection member 16, the thickness of the connection member 16 can be set to 15 μm, for example.

  The space 18 is formed by the wiring substrate 11, the substrate 14, and the electronic component 19. The space 18 is an airtight space for accommodating the electronic component 19. The pressure in the space 18 may be set to a low pressure (vacuum) as required (depending on the characteristics of the electronic component 19). Further, the space 18 may be airtight with the gas introduced.

  The electronic component 19 is mounted on the pad 29. As a result, the electronic component 19 is electrically connected to the wiring board 11. As the electronic component 19, for example, a micro electro mechanical systems (MEMS), an acceleration sensor, a light emitting diode, a semiconductor chip, or the like can be used. Such an electronic component 19 may be damaged when heated at a temperature of 300 ° C. or higher.

  The external connection terminal 21 is provided on the external connection pad 31. The external connection terminal 21 is electrically connected to the electronic component 19. The external connection terminal 21 is a terminal connected to a mounting board (not shown) such as a mother board. As the external connection terminal 21, for example, a solder ball can be used.

  In the electronic device 10 of the present embodiment, the wiring substrate 11 is used as the second substrate and the substrate 14 is used as the first substrate. However, the substrate is used as the second substrate. 14 and the wiring substrate 11 may be used as the first substrate. In other words, the through electrode 28, the pad 29 on which the electronic component 19 is mounted, and the external connection pad 31 may be provided on the first substrate or on the second substrate.

  FIG. 12 is a cross-sectional view of an electronic device according to a first modification of the first embodiment of the present invention. In FIG. 12, the same components as those of the electronic device 10 according to the first embodiment are denoted by the same reference numerals.

  Referring to FIG. 12, the electronic device 50 according to the first modification of the first embodiment is provided with a substrate 51 instead of the substrate 14 provided in the electronic device 10 of the first embodiment. Is configured in the same manner as the electronic device 10.

  The substrate 51 is configured in the same manner as the substrate 14 except that the adhesion layer 42 at a portion facing the electronic component 19 is removed.

  As described above, since the height of the space 18 can be increased by removing the adhesion layer 42 at the portion facing the electronic component 19, the electronic component 19 having a high height is accommodated in the space 18. Can do.

  FIG. 13 is a cross-sectional view of an electronic device according to a second modification of the first embodiment of the present invention. In FIG. 13, the same components as those of the electronic device 10 of the first embodiment are denoted by the same reference numerals.

  Referring to FIG. 13, the electronic device 55 of the second modification of the first embodiment is provided with a wiring substrate 56 instead of the wiring substrate 11 provided in the electronic device 10 of the first embodiment. The configuration is the same as that of the electronic device 10 except for the above.

  The wiring board 56 is configured in the same manner as the wiring board 11 except that a board body 57 having a recess 58 for accommodating a part of the electronic component 19 is provided instead of the board body 25 provided on the wiring board 11. . The depth of the recess 58 can be appropriately selected according to the height of the electronic component 19.

  Thus, by providing the wiring board 56 with the recess 58 for housing a part of the electronic component 19 in the wiring board 56, the electronic component 19 having a high height can be accommodated in the space 18.

  In the electronic device 55 according to the second modification of the first embodiment, the recess 58 may be formed in the substrate body 39 instead of forming the recess 58 in the substrate body 57. Moreover, you may form a recessed part in both the board | substrate main bodies 39 and 57. FIG. Furthermore, in the electronic device 55 according to the second modification of the first embodiment, the adhesion layer 42 at a portion facing the electronic component 19 may be removed.

  14 to 24 are views showing a manufacturing process of the electronic device according to the first embodiment of the invention. FIG. 25 is a plan view of the structure shown in FIG. 16, and FIG. 26 is a cross-sectional view of the structure shown in FIG. 14 to 26, the same components as those of the electronic device 10 according to the first embodiment are denoted by the same reference numerals.

  A method for manufacturing the electronic device 10 according to the first embodiment will be described with reference to FIGS. In the method of manufacturing the electronic device 10 according to the present embodiment, the following description is given by taking as an example the case where silicon is used as the material of the substrate bodies 25 and 39.

  First, in the step shown in FIG. 14, an insulating film 41 that covers the surface of the substrate body 39 is formed on the substrate body 39. As a material of the substrate body 39, for example, silicon, glass, insulating resin (for example, glass epoxy resin), ceramic, or the like can be used. When silicon is used as the material of the substrate body 39, the thickness of the substrate body 39 can be set to 200 μm, for example. As the insulating film 41, for example, an oxide film can be used. When the material of the substrate body 39 is silicon, the insulating film 41 can be formed by, for example, thermally oxidizing the substrate body 39. When an oxide film is used as the insulating film 41, the thickness of the insulating film 41 can be set to 1 μm, for example.

  Next, in the process shown in FIG. 15, a Ti layer 43 (for example, thickness 0.1 μm) and a Pt layer 44 (for example, thickness 0) are formed on the surface 41A of the insulating film 41 provided in the structure shown in FIG. .2 μm) and an Au layer 45 (for example, 0.5 μm in thickness) are sequentially stacked to form the adhesion layer 42. Thereby, the board | substrate 14 provided with the contact | adherence layer 42 is manufactured. Specifically, for example, the adhesion layer 42 is formed by sequentially laminating the Ti layer 43, the Pt layer 44, and the Au layer 45 on the surface 41A of the insulating film 41 by sputtering.

  Next, in the step shown in FIG. 16, a metal member 61 made of a first metal is formed on the Au layer 45 in a portion corresponding to the formation region of the connection member 16 (see FIG. 11) by a wire bonding method (metal member). Forming step). The metal member 61 is a member that is a base material of the connection member 16. As the first metal, for example, any of Au (melting point is 1064.4 ° C.), Cu (melting point is 1083 ° C.), and Ag (melting point is 961 ° C.) can be used.

  Thus, by using Au, Cu, or Ag as the first metal, it is possible to form an Au wire, a Cu wire, and an Ag wire using a wire bonding apparatus. This makes it possible to form a larger amount of the metal member 61 in a shorter time compared to the case where the Au—Sn solder 206, which is a conventional connecting member, is formed by a plating method. Cost can be reduced. Further, the thickness of the connection member 16 can be easily increased according to the height of the electronic component 19.

  Here, the metal member 61 will be described with reference to FIGS. 25 and 26. As shown in FIG. 25, when a metal wire is used as the metal member 61, the metal member 61 is formed by stitch bonding so as to form a frame shape on the outer peripheral portion of the adhesion layer 42 using, for example, a wire bonding apparatus. To do. Moreover, the diameter of a metal wire can be 15 micrometers-30 micrometers, for example.

  In FIGS. 16 and 25, the case where the metal member 61 is configured by one metal wire is illustrated as an example, but the metal member 61 may be configured by a plurality of metal wires. Thus, by forming the metal member 61 with a plurality of metal wires, the thickness of the connection member 16 is increased, and thus the height of the space 18 can be increased. Thereby, the electronic component 19 with a high height can be accommodated in the space 18.

  Next, in the process shown in FIG. 17, the insulating film 26, the through electrode 28, the pad 29, and the external connection pad 31 are formed on the substrate body 25 by a known method. As a material of the substrate body 25, for example, silicon, glass, insulating resin (for example, glass epoxy resin), ceramic, or the like can be used. When silicon is used as the material of the substrate body 25, the thickness of the substrate body 25 can be set to 200 μm, for example. As the insulating film 26, for example, an oxide film can be used. When an oxide film is used as the insulating film 26, for example, the oxide film is formed by thermally oxidizing the substrate body 25. When an oxide film is used as the insulating film 26, the thickness of the insulating film 26 can be set to 1 μm, for example. The through electrode 28, the pad 29, and the external connection pad 31 can be formed by, for example, a plating method. For example, Cu can be used as the material of the through electrode 28, the pad 29, and the external connection pad 31.

  Next, in the step shown in FIG. 18, a Ti layer 35 (for example, thickness of 0.1 μm) and a Pt layer 36 (for example, for example) are formed so as to cover the surface 26A of the insulating film 26 provided in the structure shown in FIG. A Ti / Pt / Au laminated film 62 is formed by sequentially laminating an Au layer 37 (for example, a thickness of 0.5 μm) and a Au layer 37 (for example, a thickness of 0.5 μm). The Ti / Pt / Au laminated film 62 is a laminated film that becomes the adhesion layer 32 when a part thereof is etched in the step shown in FIG.

  Next, in the step shown in FIG. 19, the first portion is formed by electrolytic plating using the Ti / Pt / Au laminated film 62 as the power feeding layer on the Au layer 37 corresponding to the formation region of the connection member 16 (see FIG. 11). A metal layer 63 made of a second metal having a melting point lower than that of the first metal and forming an alloy with the first metal (alloy serving as the connecting member 16) is formed (metal layer forming step).

  Specifically, on the Au layer 37, a resist film for plating (not shown) having an opening that exposes a portion of the Au layer 37 corresponding to the formation region of the connection member 16 is formed, and then Ti / By electroplating using the Pt / Au laminated film 62 as a power feeding layer, a plating film (a base material of the metal layer 63) is deposited and grown on the Au layer 37, and then the resist film for plating is removed to remove the metal layer 63. Form.

  The metal layer 63 is a metal layer for forming an alloy that reacts with the metal member 61 and becomes the connection member 16 by being melted by heating in a process (substrate connection process) shown in FIG. 23 described later. Therefore, the melting point of the metal layer 63 is preferably a temperature (specifically, 300 ° C. or less) at which the through electrode 28, the pad 29, the external connection pad 31, and the electronic component 19 mounted on the wiring board 11 are not damaged. For example, In (melting point is 156.6 ° C.) or Sn (melting point is 231.97 ° C.) can be used as the second metal whose melting point of the metal layer 63 is 300 ° C. or less.

  As described above, by using In (melting point: 156.6 ° C.) or Sn (melting point: 231.97 ° C.) having a melting point of 300 ° C. or lower as the second metal to be the material of the metal layer 63, the wiring In the step (substrate connection step) shown in FIG. 23 for connecting the substrate 11 and the substrate 14, the through electrode 28, the pad 29, the external connection pad 31, and the electronic component 19 mounted on the wiring substrate 11 are damaged. Can be prevented.

  The thickness of the metal layer 63 when using an Au wire with a diameter of 15 μm to 30 μm as the metal member 61 and using In as the second metal can be set to 2 μm, for example.

  Here, the combination of the 1st metal used as the material of the metal member 61, the 2nd metal used as the material of the metal layer 63, and the alloy formed by these combinations are demonstrated.

When the first metal is Au, for example, In can be used as the second metal. In this case, an Au—In alloy (for example, AuIn ₂ (remelting temperature is 495 ° C.)) is formed as the alloy. When the first metal is Cu, for example, Sn can be used as the second metal. In this case, a Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)) is formed as the alloy.

  When the first metal is Ag, for example, Sn or In can be used as the second metal. When Sn is used as the second metal, an Ag—Sn alloy (remelting temperature is 600 ° C.) is formed as the alloy. When In is used as the second metal, an Ag—In alloy (remelting temperature is 880 ° C.) is formed as the alloy.

  Next, in the step shown in FIG. 20, unnecessary portions of the Ti / Pt / Au laminated film 62 where the metal layer 63 is not formed are removed by etching to remove the Ti layer 35 (for example, a thickness of 0.1 μm), The adhesion layer 32 in which the Pt layer 36 (for example, thickness 0.2 μm) and the Au layer 37 (for example, thickness 0.5 μm) are stacked is formed. Thereby, the wiring board 11 is formed.

  Next, in the step shown in FIG. 21, the electronic component 19 is mounted on the pad 29 provided on the wiring board 11. As the electronic component 19, for example, a micro electro mechanical systems (MEMS), an acceleration sensor, a light emitting diode, a semiconductor chip, or the like can be used. Such an electronic component 19 may be damaged when heated at a temperature of 300 ° C. or higher.

  Next, in the process shown in FIG. 22, the metal layer 63 is formed so that the metal member 61 and the metal layer 63 are in contact with each other, and the wiring board 11 on which the electronic component 19 is mounted and the metal member 16 are formed. The substrate 14 is placed opposite to the substrate 14.

  Next, in the step shown in FIG. 23, the structure shown in FIG. 22 is heated at a temperature at which only the metal layer 63 melts, and the metal member 61 and the metal layer 63 are reacted to form an alloy that becomes the connection member 16. Then, the wiring board 11 and the board 14 are connected by the connecting member 16 (the process shown in FIGS. 22 and 23 corresponds to the “board connecting process”). As a result, an airtight space 18 is formed by the wiring substrate 11, the substrate 14, and the connection member 16.

  As an alloy constituting the connection member 16, an alloy having a remelting temperature higher than the temperature at which the external connection terminal 21 is formed in a step (external connection terminal forming step) shown in FIG. Specifically, for example, when a solder ball is used as the external connection terminal 21 (the processing temperature in the external connection terminal forming step in this case is 245 ° C.), the alloy constituting the connection member 16 has a remelting temperature of 260. It is preferable to use an alloy having a temperature of ℃ or higher.

Specifically, as the connection member 16, for example, an Au—In alloy (for example, AuIn ₂ (remelting temperature is 495 ° C.)), a Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)). )), An Ag—Sn alloy (remelting temperature is 600 ° C.), an Ag—In alloy (remelting temperature is 880 ° C.), and the like.

  Thus, by using an alloy having a remelting temperature higher than the temperature at which the external connection terminal 21 is formed as the alloy constituting the connection member 16, a process (external connection terminal formation process) shown in FIG. ), The connection member 16 that connects the wiring substrate 11 and the substrate 14 can be prevented from being melted again.

  Next, in the step shown in FIG. 24, the external connection terminals 21 are formed on the external connection pads 31 provided in the structure shown in FIG. 23 (external connection terminal forming step). Thereby, the electronic device 10 of the first embodiment is manufactured. As the external connection terminal 21, for example, a solder ball can be used. For example, 245 ° C. can be used as a processing temperature when forming solder balls as the external connection terminals 21.

  According to the electronic device of the present embodiment, the metal member 61 (connection) made of the first metal (for example, Au, Cu, Ag) is formed on the portion of the substrate 14 corresponding to the formation region of the connection member 16 by the wire bonding method. By forming the base material of the member 16, a larger amount of the metal member 61 can be formed in a shorter time compared to the case where the Au—Sn solder 206, which is a conventional connection member, is formed by a plating method. Therefore, the cost of the electronic device 10 can be reduced. Further, the thickness of the connection member 16 can be easily increased according to the height of the electronic component 19.

In addition, a part of the substrate 14 corresponding to the region where the connection member 16 is formed has a melting point lower than that of the first metal (for example, Au, Cu, Ag) constituting the metal member 61 and an alloy of the first metal and the first metal. A metal layer 63 made of a second metal to be formed (for example, In (melting point is 156.6 ° C.), Sn (melting point is 231.97 ° C.)) is formed, and the metal member 61 and the metal layer 63 are in contact with each other. In addition, the wiring board 11 and the board 14 are arranged opposite to each other, and the metal member 61 and the metal layer 63 are heated at a temperature at which only the metal layer 63 is melted to form an alloy (for example, Au—In alloy (for example, AuIn ₂ (remelted)). Temperature is 495 ° C.), Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)), Ag—Sn alloy (remelting temperature is 600 ° C.), Ag—In alloy (remelting temperature is 880) The connecting member 16 comprising: Then, by connecting the wiring substrate 11 and the substrate 14, a temperature (for example, 320 ° C.) lower than a temperature (for example, 320 ° C.) when melting Au—Sn solder (melting point is 280 ° C.), which is a conventional connection member. The wiring substrate 11 and the substrate 14 can be connected by heating at a temperature of 300 ° C. or less.

  As a result, the through electrode 28, the pad 29, the external connection pad 31, and the electronic component 19 are not damaged due to the influence of heat when connecting the wiring board 11 and the board 14, so that the yield of the electronic device 10 is improved. Can be improved.

Further, as an alloy constituting the connection member 16, an alloy having a remelting temperature higher than a temperature (for example, 245 ° C.) when the external connection terminal 21 is formed (for example, an Au—In alloy (for example, AuIn ₂ (re- Melting temperature is 495 ° C.)), Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)), Ag—Sn alloy (remelting temperature is 600 ° C.), Ag—In alloy (remelting temperature) 880 ° C.) can be used to prevent the connecting member 16 connecting the wiring substrate 11 and the substrate 14 from being melted again in the external connection terminal forming step (step shown in FIG. 24).

  FIG. 27 is a view showing an example of another metal member, and FIG. 28 is a plan view of the structure shown in FIG. 27 and 28, the same components as those of the substrate 14 described above are denoted by the same reference numerals.

  In the method of manufacturing the electronic device 10 according to the present embodiment, the case where a metal wire is used as the metal member 61 has been described as an example. However, instead of the metal member 61, the substrate 14 is bonded to the substrate 14 by wire bonding. The electronic device 10 is manufactured by forming a plurality of metal members 71 composed of bumps as shown in FIGS. 27 and 28, and then performing the same process as the steps shown in FIGS. 17 to 24 described above. Also good. In this case, the same effect as that of the method for manufacturing the electronic device 10 of the present embodiment can be obtained.

  As the material of the metal member 71, the same metal (for example, Au, Cu, Ag) as the material of the metal member 61 described above can be used. 27 and 28, the case where the metal members 71 are arranged in two rows is shown as an example, but the number of rows when the metal members 71 are arranged is not limited to this. The number of rows when the metal members 71 are arranged may be one row or two or more rows. The number of rows when the metal members 71 are arranged can be appropriately selected according to the thickness of the connection member 16.

  Further, the electronic devices 50 and 55 of the first and second modifications of the present embodiment can be manufactured by the same method as the electronic device 10 of the first embodiment, and the first embodiment The effect similar to the manufacturing method of the electronic device 10 of the form can be obtained.

(Second Embodiment)
FIG. 29 is a cross-sectional view of the electronic device according to the second embodiment of the present invention. In FIG. 29, the same components as those of the electronic device 10 of the first embodiment are denoted by the same reference numerals.

  Referring to FIG. 29, an electronic device 80 according to the second embodiment includes a wiring board 81 that is a first board, a frame-like board 82 that is a second board, the connection member 16, The electronic components 84 and 85, the space 86, and the external connection terminal 21 are included.

  The wiring board 81 is the same as the wiring board 11 except that the substrate body 25 provided in the wiring board 11 (see FIG. 11) described in the first embodiment is provided with a recess 87 for accommodating the electronic component 85. Configured. The depth of the recess 87 can be appropriately selected depending on the size of the electronic component 85. When the height of the electronic component 85 is 80 μm, the depth of the recess 87 can be set to 100 μm, for example.

  The substrate 82 is provided on the frame-shaped substrate body 88, the insulating film 41 covering the surface of the substrate body 88, and the surface 41A of the insulating film 41 (the surface of the insulating film 41 on the side facing the connecting member 16). And an adhesive layer 42. As a material of the substrate body 88, for example, silicon, glass, insulating resin (for example, glass epoxy resin), ceramic, or the like can be used. When silicon is used as the material of the substrate body 88, the thickness of the substrate body 25 can be set to 200 μm, for example.

  In FIG. 29, the case where silicon is used as the material of the substrate body 88 is shown as an example. In the present embodiment, the following description is given by taking the case where silicon is used as the material of the substrate body 88 as an example. When glass, insulating resin (for example, glass epoxy resin), or ceramic is used as the material of the substrate body 88, the insulating film 41 is not necessary.

The connection member 16 is provided between the Au layer 37 and the Au layer 45 so as to be in contact with the Au layers 37 and 45. The connection member 16 is disposed so as to surround the electronic component 84. That is, the connection member 16 has a frame shape. The connection member 16 is a member for connecting the wiring substrate 81 and the substrate 82. As the connection member 16, an Au—In alloy (for example, AuIn ₂ (remelting temperature is 495 ° C.), a Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.), an Ag—Sn alloy (re-melting temperature)). Melting temperature is 600 ° C.), Ag—In alloy (remelting temperature is 880 ° C.), etc. When Au—In alloy is used as the connecting member 16, the thickness of the connecting member 16 is, for example, 15 μm. It can be.

  The electronic component 84 is mounted on the pad 29 provided on the wiring board 81. As a result, the electronic component 84 is electrically connected to the wiring board 81. The electronic component 84 is electrically connected to an electronic component 85 disposed below the electronic component 84. For example, a component that adjusts the characteristics of the electronic component 85 can be used as the electronic component 84. Specifically, when the electronic component 85 is an acceleration sensor, as the electronic component 84, for example, a component that functions as an acceleration sensor amplifier or an acceleration sensor driver can be used.

  The electronic component 85 is accommodated in a recess 87 formed below the electronic component 84. The electronic component 85 is electrically connected to the electronic component 84. As the electronic component 84, for example, an acceleration sensor can be used.

  The space 86 is an open space and is formed by the wiring substrate 81, the substrate 82, and the connection member 16. The space 86 is a space for accommodating the electronic component 84. The external connection terminal 21 is disposed on an external connection pad 31 provided on the wiring board 81.

  FIG. 30 is a cross-sectional view of an electronic device according to a modification of the second embodiment of the present invention. In FIG. 30, the same components as those of the electronic device 80 according to the second embodiment are denoted by the same reference numerals.

  Referring to FIG. 30, an electronic device 95 according to a modification of the second embodiment is further provided with a lid 96 and a substrate body 88 in addition to the configuration of the electronic device 80 of the second embodiment. The configuration is the same as that of the electronic device 80 except that a part of the insulating film 41 is removed (the portion of the insulating film 41 corresponding to the region where the lid 96 is disposed is removed).

  The lid 96 is a plate-like substrate and is disposed on the substrate body 88. The lid 96 is bonded to the substrate body 88 by anodic bonding. As a result, the space 86 formed by the wiring substrate 81, the substrate 82, the connection member 16, and the lid 96 is airtight. As a material of the lid 96, for example, silicon or glass can be used. When silicon is used as the material of the lid 96, the thickness of the lid 96 can be set to 200 μm, for example.

  31 to 38 are views showing a manufacturing process of the electronic device according to the second embodiment of the present invention. 31 to 38, the same components as those of the electronic device 80 according to the second embodiment are denoted by the same reference numerals.

  A method for manufacturing the electronic device 80 according to the second embodiment will be described with reference to FIGS. First, in the step shown in FIG. 31, the wiring substrate 81 is formed by the same method as the step shown in FIGS. 17 and 18 described in the first embodiment. The recess 87 is formed, for example, by etching the substrate body 25 before forming the insulating film 26.

  Next, in the step shown in FIG. 32, the Au layer 37 corresponding to the formation region of the connection member 16 (see FIG. 29) is formed on the Au layer 37 corresponding to the formation region of the connection member 16 by the same method as that shown in FIG. 16 described in the first embodiment. A metal member 61 made of the first metal is formed by a wire bonding method (metal member forming step). The metal member 61 is a member that is a base material of the connection member 16. As the first metal, for example, any of Au (melting point is 1064.4 ° C.), Cu (melting point is 1083 ° C.), and Ag (melting point is 961 ° C.) can be used.

  Thus, by using Au, Cu, or Ag as the first metal, it is possible to form an Au wire, a Cu wire, and an Ag wire using a wire bonding apparatus. This makes it possible to form a larger amount of the metal member 61 in a shorter time compared to the case where the Au—Sn solder 206, which is a conventional connecting member, is formed by a plating method. Cost can be reduced.

  Next, in the process shown in FIG. 33, the substrate 82 is formed by performing the same process as the process shown in FIGS. 14 and 15 described in the first embodiment.

  Next, in the process shown in FIG. 34, by performing the same process as the process shown in FIG. 19 described in the first embodiment, the first Au layer 45 corresponding to the formation region of the connection member 19 is formed on the first layer. A metal layer 63 made of a second metal having a melting point lower than that of the first metal and forming an alloy with the first metal (alloy serving as the connecting member 16) is formed (metal layer forming step). As the second metal, for example, a metal having a melting point of 300 ° C. or less described in the first embodiment (for example, In (melting point is 156.6 ° C.), Sn (melting point is 231.97 ° C.)) Can be used. The thickness of the metal layer 63 when using an Au wire with a diameter of 15 to 30 μm as the metal member 61 and using In as the second metal can be set to 2 μm, for example.

  Next, in the step shown in FIG. 35, the wiring board 81 and the board 82 on which the electronic components 84 and 85 are not mounted are arranged to face each other so that the metal member 61 and the metal layer 63 are in contact with each other.

  Next, in the step shown in FIG. 36, the structure shown in FIG. 35 is heated at a temperature at which only the metal layer 63 melts, and the molten metal member 61 and the metal layer 63 react to form the connection member 16. An alloy is formed, and the connection board 16 connects the wiring board 81 on which the electronic components 84 and 85 are not mounted to the board 82 (the process shown in FIGS. 35 and 36 corresponds to the “board connection process”). Thereby, an open space 86 is formed by the wiring substrate 81, the substrate 82, and the connection member 16.

  In this way, by connecting the wiring board 81 and the board 82 on which the electronic components 84 and 85 are not mounted, the electronic components 84 and 85 are not affected by heat in the board connecting process. , 85 can be prevented from being damaged.

  As the alloy constituting the connection member 16, an alloy having a remelting temperature higher than the temperature at which the external connection terminal 21 is formed in a step (external connection terminal forming step) shown in FIG. Specifically, for example, when a solder ball is used as the external connection terminal 21 (the processing temperature in the external connection terminal forming step in this case is 245 ° C.), the alloy constituting the connection member 16 has a remelting temperature of 260. It is preferable to use an alloy having a temperature of ℃ or higher.

Specifically, as the connection member 16, for example, an Au—In alloy (for example, AuIn ₂ (remelting temperature is 495 ° C.)), a Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)). )), An Ag—Sn alloy (remelting temperature is 600 ° C.), an Ag—In alloy (remelting temperature is 880 ° C.), and the like.

  Thus, by using an alloy having a remelting temperature higher than the temperature at which the external connection terminal 21 is formed as the alloy constituting the connection member 16, a process (external connection terminal formation process) shown in FIG. ), The connection member 16 connecting the wiring board 81 and the board 82 can be prevented from being melted again. Further, since the through via 28, the pad 29, and the external connection pad 31 provided in the wiring board 81 are not damaged, the yield of the electronic device 80 can be improved.

  37, the electronic component 84 is mounted on the electronic component 85, and then the electronic component 84 on which the electronic component 85 is mounted is mounted on the pad 29. Thereby, the electronic components 84 and 85 are electrically connected to the wiring board 81. When an acceleration sensor is used as the electronic component 85, for example, a component that functions as an acceleration sensor amplifier or an acceleration sensor driver can be used as the electronic component 84.

  Next, in the step shown in FIG. 38, the external connection pad 31 provided in the structure shown in FIG. 37 is externally connected by performing the same process as that shown in FIG. 24 described in the first embodiment. Terminal 21 is formed (external connection terminal forming step). As a result, the electronic device 80 according to the second embodiment is manufactured. As the external connection terminal 21, for example, a solder ball can be used. For example, 245 ° C. can be used as a processing temperature when forming solder balls as the external connection terminals 21.

  According to the electronic device of the present embodiment, a metal member 61 (for example, Au, Cu, Ag) made of a first metal (for example, Au, Cu, Ag) is formed on a portion of the wiring substrate 81 corresponding to the formation region of the connection member 16 by a wire bonding method. By forming the base material of the connection member 16, a larger amount of the metal member 61 can be formed in a shorter time compared to the case where the Au—Sn solder 206, which is a conventional connection member, is formed by plating. Therefore, the cost of the electronic device 80 can be reduced.

In addition, a part of the substrate 82 corresponding to the formation region of the connection member 16 has a melting point lower than that of the first metal (for example, Au, Cu, Ag) constituting the metal member 61 and an alloy of the first metal and the first metal. A metal layer 63 made of a second metal to be formed (for example, In (melting point is 156.6 ° C.), Sn (melting point is 231.97 ° C.)) is formed, and the metal member 61 and the metal layer 63 are in contact with each other. In addition, the wiring board 81 and the board 82 are arranged to face _{each other} , and the metal member 61 and the metal layer 63 are heated at a temperature at which only the metal layer 63 is melted to form an alloy (for example, Au—In alloy (for example, AuIn ₂ (remelted)). Temperature is 495 ° C.), Cu—Sn alloy (for example, Cu ₆ Sn ₅ (remelting temperature is 415 ° C.)), Ag—Sn alloy (remelting temperature is 600 ° C.), Ag—In alloy (remelting temperature is 880 ° C.)) Then, by connecting the wiring substrate 81 and the substrate 82, a temperature (for example, 320 ° C.) lower than a temperature (for example, 320 ° C.) when melting Au—Sn solder (melting point is 280 ° C.), which is a conventional connection member. , A temperature of 300 ° C. or less), the wiring board 81 and the board 82 can be connected.

  This prevents the through electrode 28, the pad 29, the external connection pad 31, and the electronic component 19 from being damaged due to the influence of heat when connecting the wiring substrate 81 and the substrate 82, so that the yield of the electronic device 80 is increased. Can be improved.

  Furthermore, after connecting the wiring board 81 and the board 82 by the connecting member 16, the electronic parts 84 and 85 are mounted on the pads 29 provided on the wiring board 81, so that the electronic parts 84 and 85 are heated in the board connecting step. The electronic components 84 and 85 can be prevented from being damaged.

  In the method of manufacturing the electronic device 80 according to the present embodiment, the connection member 16 is formed using the metal member 61 made of a metal wire to connect the wiring substrate 81 and the substrate 82. Instead, the connection member 16 may be formed by providing a plurality of metal members 71 made of the bumps described in FIGS. 27 and 28. In this case, an effect similar to that of the electronic device 80 of the present embodiment can be obtained.

  In addition, the electronic device 95 according to the modification of the second embodiment is configured such that the lid body 96 is anodically bonded to the substrate body 88 in the step shown in FIG. 33, or the lid body 96 is attached in the step shown in FIG. The substrate main body 88 can be manufactured by performing the same process as the manufacturing method of the electronic device 80 according to the second embodiment except that a step of anodically bonding the substrate main body 88 is separately provided.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and within the scope of the present invention described in the claims, Various modifications and changes are possible.

  The present invention relates to a method for manufacturing an electronic device, and in particular, two substrates disposed opposite to each other, a connection member that connects the two substrates, and an electronic component that is accommodated in a space formed by the two substrates and the connection member. It can apply to the manufacturing method of the electronic component provided with.

It is sectional drawing of the conventional electronic device. It is FIG. (1) which shows the manufacturing process of the conventional electronic device. It is FIG. (2) which shows the manufacturing process of the conventional electronic device. It is FIG. (3) which shows the manufacturing process of the conventional electronic device. It is FIG. (4) which shows the manufacturing process of the conventional electronic device. It is FIG. (5) which shows the manufacturing process of the conventional electronic device. It is FIG. (6) which shows the manufacturing process of the conventional electronic device. It is FIG. (7) which shows the manufacturing process of the conventional electronic device. It is FIG. (8) which shows the manufacturing process of the conventional electronic device. It is FIG. (9) which shows the manufacturing process of the conventional electronic device. 1 is a cross-sectional view of an electronic device according to a first embodiment of the present invention. It is sectional drawing of the electronic device which concerns on the 1st modification of the 1st Embodiment of this invention. It is sectional drawing of the electronic device which concerns on the 2nd modification of the 1st Embodiment of this invention. It is FIG. (1) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (2) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (The 3) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (4) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (5) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (6) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (The 7) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (The 8) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (9) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (10) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is FIG. (11) which shows the manufacturing process of the electronic device which concerns on the 1st Embodiment of this invention. It is the figure which planarly viewed the structure shown in FIG. It is sectional drawing of the AA line direction of the structure shown in FIG. It is a figure which shows the example of another metal member. It is the figure which planarly viewed the structure shown in FIG. It is sectional drawing of the electronic device of the 2nd Embodiment of this invention. It is sectional drawing of the electronic device which concerns on the modification of the 2nd Embodiment of this invention. It is FIG. (1) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (2) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (The 3) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (4) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (5) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (6) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (7) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention. It is FIG. (The 8) which shows the manufacturing process of the electronic device which concerns on the 2nd Embodiment of this invention.

Explanation of symbols

10, 50, 55, 80, 95 Electronic device 11, 56, 81 Wiring board 14, 51, 82 Board 16 Connection member 18, 86 Space 19, 84, 85 Electronic component 21 External connection terminal 25, 39, 57, 88 Board Main body 26, 41 Insulating film 26A, 26B, 41A Surface 28 Through electrode 29 Pad 31 External connection pad 32, 42 Adhesion layer 33 Through hole 35, 43 Ti layer 36, 44 Pt layer 37, 45 Au layer 58, 87 Recess 61 71 Metal member 62 Ti / Pt / Au laminated film 63 Metal layer 96 Lid

Claims (9)

A first substrate; a second substrate disposed opposite to the first substrate; and the first substrate and the second substrate, in contact with the first and second substrates. An electronic device manufacturing method comprising: a connecting member to be connected; a space formed by the first and second substrates and the connecting member; and an electronic component housed in the space,
A metal member forming step of forming a metal member made of a first metal on a portion of the first substrate corresponding to the formation region of the connection member by a wire bonding method;
A metal layer made of a second metal having a melting point lower than that of the first metal and forming an alloy with the first metal is formed on the second substrate in a portion corresponding to the formation region of the connection member. A metal layer forming step,
The first substrate and the second substrate are arranged to face each other so that the metal member and the metal layer are in contact with each other, and the metal member and the metal layer are heated at a temperature at which only the metal layer melts. Forming a connection member made of the alloy and connecting the first substrate and the second substrate, and a method for manufacturing an electronic device.   The method for manufacturing an electronic device according to claim 1, wherein the first metal is any one of Au, Cu, and Ag.   The method for manufacturing an electronic device according to claim 1, wherein the second metal is In or Sn.   4. The electronic device according to claim 1, wherein the alloy is any one of an Au—In alloy, a Cu—Sn alloy, an Ag—Sn alloy, and an Ag—In alloy. Manufacturing method.   5. The device according to claim 1, wherein the first substrate includes a pad on which the electronic component is mounted and an external connection pad electrically connected to the pad. The manufacturing method of the electronic device of description.   The said 2nd board | substrate has a pad in which the said electronic component is mounted, and the pad for external connection electrically connected with the said pad, The any one of the Claims 1 thru | or 4 characterized by the above-mentioned. The manufacturing method of the electronic device of description. An external connection terminal forming step of forming an external connection terminal on the external connection pad;
7. The method of manufacturing an electronic device according to claim 5, wherein a remelting temperature of the alloy is higher than a temperature at which the external connection terminal is formed.   The method for manufacturing an electronic device according to claim 1, wherein a recess is formed in the first substrate and / or the second substrate. -   The method of manufacturing an electronic device according to claim 1, wherein the first substrate or the second substrate has a frame shape.

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