JP2009253254A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2009253254A JP2009253254A JP2008103475A JP2008103475A JP2009253254A JP 2009253254 A JP2009253254 A JP 2009253254A JP 2008103475 A JP2008103475 A JP 2008103475A JP 2008103475 A JP2008103475 A JP 2008103475A JP 2009253254 A JP2009253254 A JP 2009253254A
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- substrate
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- light emitting
- semiconductor light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
【解決手段】半導体装置100は、配線パターンの形成された樹脂基板1の裏面から基板1に設けられた貫通孔2を塞ぐように形成された金属薄板4上の貫通孔2内に接着剤8を介して取り付けられた半導体素子5を備える。基板1上には、貫通孔2の周部に金属パターン10が設けられている。金属パターン10は、半導体素子5と配線パターン3を接続する導電ワイヤ9の直下領域12、13を除いて形成されている。
【選択図】図1
Description
尚、本発明の半導体発光装置は、上記した実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々変更を加えることは勿論である。
2:貫通孔
3:配線パターン
4:金属薄板
5:半導体発光素子
6、7:電極
8:接着剤
9:導電ワイヤ
10:金属パターン
11:封止樹脂部
12、13:直下領域
14:レジスト層
15:絶縁層
Claims (4)
- 貫通孔を有する基板と、
前記基板の底面に配置され前記貫通孔を塞ぐ金属薄板と、
前記貫通孔内の前記金属薄板上に載置された半導体素子と、
前記基板上に形成された配線パターンと、
前記半導体素子の電極と前記配線パターンを接続する導電ワイヤと、
前記基板の上面の前記貫通孔の周部に形成された金属パターンとを有する半導体装置。 - 前記配線パターンは、前記基板の長手方向の両端部に端子部を有し、
前記金属パターンは、少なくとも前記基板上面の前記貫通孔と前記端子部の形成されていない側端部との間に延設されている請求項1の半導体装置。 - 前記金属パターンは、前記導電ワイヤの直下領域を含まない範囲に形成されていることを特徴とする請求項1または2記載の半導体装置。
- さらに、前記半導体発光素子および前記導電ワイヤを覆うトランスファ成形により形成された封止樹脂部を有する請求項3記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008103475A JP5121544B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008103475A JP5121544B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009253254A true JP2009253254A (ja) | 2009-10-29 |
JP5121544B2 JP5121544B2 (ja) | 2013-01-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008103475A Active JP5121544B2 (ja) | 2008-04-11 | 2008-04-11 | 半導体発光装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020074488A (ja) * | 2011-02-16 | 2020-05-14 | ローム株式会社 | 発光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235696A (ja) * | 1994-02-25 | 1995-09-05 | Sharp Corp | チップ部品型led及びその製造方法 |
JPH08125227A (ja) * | 1994-10-21 | 1996-05-17 | Shichizun Denshi:Kk | 発光ダイオード |
JPH11284233A (ja) * | 1998-03-27 | 1999-10-15 | Stanley Electric Co Ltd | 平面実装型led素子 |
JP2000223752A (ja) * | 1999-01-29 | 2000-08-11 | Nichia Chem Ind Ltd | 光半導体装置及びその形成方法 |
-
2008
- 2008-04-11 JP JP2008103475A patent/JP5121544B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235696A (ja) * | 1994-02-25 | 1995-09-05 | Sharp Corp | チップ部品型led及びその製造方法 |
JPH08125227A (ja) * | 1994-10-21 | 1996-05-17 | Shichizun Denshi:Kk | 発光ダイオード |
JPH11284233A (ja) * | 1998-03-27 | 1999-10-15 | Stanley Electric Co Ltd | 平面実装型led素子 |
JP2000223752A (ja) * | 1999-01-29 | 2000-08-11 | Nichia Chem Ind Ltd | 光半導体装置及びその形成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020074488A (ja) * | 2011-02-16 | 2020-05-14 | ローム株式会社 | 発光装置 |
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JP5121544B2 (ja) | 2013-01-16 |
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