JP2009224455A - 平面アンテナ部材およびこれを備えたプラズマ処理装置 - Google Patents

平面アンテナ部材およびこれを備えたプラズマ処理装置 Download PDF

Info

Publication number
JP2009224455A
JP2009224455A JP2008065635A JP2008065635A JP2009224455A JP 2009224455 A JP2009224455 A JP 2009224455A JP 2008065635 A JP2008065635 A JP 2008065635A JP 2008065635 A JP2008065635 A JP 2008065635A JP 2009224455 A JP2009224455 A JP 2009224455A
Authority
JP
Japan
Prior art keywords
planar antenna
center
opening
antenna member
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008065635A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009224455A5 (https=
Inventor
Atsushi Ueda
篤 植田
Hikari Adachi
光 足立
Cai Zhong Tian
才忠 田
Yoshinori Fukuda
良則 福田
Toshiaki Hongo
俊明 本郷
Masao Yoshioka
正雄 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008065635A priority Critical patent/JP2009224455A/ja
Priority to KR1020107007491A priority patent/KR20100122894A/ko
Priority to PCT/JP2009/054922 priority patent/WO2009113680A1/ja
Priority to CN2009801009072A priority patent/CN101849444B/zh
Priority to US12/922,402 priority patent/US20110114021A1/en
Publication of JP2009224455A publication Critical patent/JP2009224455A/ja
Publication of JP2009224455A5 publication Critical patent/JP2009224455A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008065635A 2008-03-14 2008-03-14 平面アンテナ部材およびこれを備えたプラズマ処理装置 Pending JP2009224455A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008065635A JP2009224455A (ja) 2008-03-14 2008-03-14 平面アンテナ部材およびこれを備えたプラズマ処理装置
KR1020107007491A KR20100122894A (ko) 2008-03-14 2009-03-13 평면 안테나 부재, 및 이것을 구비한 플라즈마 처리 장치
PCT/JP2009/054922 WO2009113680A1 (ja) 2008-03-14 2009-03-13 平面アンテナ部材、及び、これを備えたプラズマ処理装置
CN2009801009072A CN101849444B (zh) 2008-03-14 2009-03-13 平板天线部件以及具备其的等离子体处理装置
US12/922,402 US20110114021A1 (en) 2008-03-14 2009-03-13 Planar antenna member and plasma processing apparatus including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008065635A JP2009224455A (ja) 2008-03-14 2008-03-14 平面アンテナ部材およびこれを備えたプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2009224455A true JP2009224455A (ja) 2009-10-01
JP2009224455A5 JP2009224455A5 (https=) 2011-03-10

Family

ID=41065337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008065635A Pending JP2009224455A (ja) 2008-03-14 2008-03-14 平面アンテナ部材およびこれを備えたプラズマ処理装置

Country Status (5)

Country Link
US (1) US20110114021A1 (https=)
JP (1) JP2009224455A (https=)
KR (1) KR20100122894A (https=)
CN (1) CN101849444B (https=)
WO (1) WO2009113680A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884526B2 (en) 2012-01-20 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Coherent multiple side electromagnets

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103647128B (zh) * 2013-12-23 2016-05-11 西南交通大学 一种高功率径向线密封窗
SG11201608640QA (en) 2014-05-16 2016-11-29 Applied Materials Inc Showerhead design
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) * 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH08111297A (ja) * 1994-08-16 1996-04-30 Tokyo Electron Ltd プラズマ処理装置
JPH11251299A (ja) * 1998-03-03 1999-09-17 Hitachi Ltd プラズマ処理方法および装置
JPH11260594A (ja) * 1998-03-12 1999-09-24 Hitachi Ltd プラズマ処理装置
JP2000223298A (ja) * 1999-02-01 2000-08-11 Tokyo Electron Ltd プラズマ処理装置
JP2001338918A (ja) * 2000-05-26 2001-12-07 Tadahiro Omi プラズマ処理装置
JP2001345312A (ja) * 2000-03-29 2001-12-14 Canon Inc プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002050615A (ja) * 2000-08-04 2002-02-15 Tokyo Electron Ltd ラジアルアンテナ及びそれを用いたプラズマ装置
JP2003133232A (ja) * 2001-10-19 2003-05-09 Naohisa Goto マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置
JP2003264181A (ja) * 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置およびプラズマ生成方法
JP2004235434A (ja) * 2003-01-30 2004-08-19 Rohm Co Ltd プラズマ処理装置
JP2006244891A (ja) * 2005-03-04 2006-09-14 Tokyo Electron Ltd マイクロ波プラズマ処理装置
WO2007136043A1 (ja) * 2006-05-22 2007-11-29 Tokyo Electron Limited 平面アンテナ部材及びこれを用いたプラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998565B2 (en) * 2003-01-30 2006-02-14 Rohm Co., Ltd. Plasma processing apparatus
JP4149427B2 (ja) * 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
US20080190560A1 (en) * 2005-03-04 2008-08-14 Caizhong Tian Microwave Plasma Processing Apparatus

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) * 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH08111297A (ja) * 1994-08-16 1996-04-30 Tokyo Electron Ltd プラズマ処理装置
JPH11251299A (ja) * 1998-03-03 1999-09-17 Hitachi Ltd プラズマ処理方法および装置
JPH11260594A (ja) * 1998-03-12 1999-09-24 Hitachi Ltd プラズマ処理装置
JP2000223298A (ja) * 1999-02-01 2000-08-11 Tokyo Electron Ltd プラズマ処理装置
JP2001345312A (ja) * 2000-03-29 2001-12-14 Canon Inc プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2001338918A (ja) * 2000-05-26 2001-12-07 Tadahiro Omi プラズマ処理装置
JP2002050615A (ja) * 2000-08-04 2002-02-15 Tokyo Electron Ltd ラジアルアンテナ及びそれを用いたプラズマ装置
JP2003133232A (ja) * 2001-10-19 2003-05-09 Naohisa Goto マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置
JP2003264181A (ja) * 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置およびプラズマ生成方法
JP2004235434A (ja) * 2003-01-30 2004-08-19 Rohm Co Ltd プラズマ処理装置
JP2006244891A (ja) * 2005-03-04 2006-09-14 Tokyo Electron Ltd マイクロ波プラズマ処理装置
WO2007136043A1 (ja) * 2006-05-22 2007-11-29 Tokyo Electron Limited 平面アンテナ部材及びこれを用いたプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884526B2 (en) 2012-01-20 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Coherent multiple side electromagnets

Also Published As

Publication number Publication date
CN101849444A (zh) 2010-09-29
KR20100122894A (ko) 2010-11-23
US20110114021A1 (en) 2011-05-19
CN101849444B (zh) 2012-08-29
WO2009113680A1 (ja) 2009-09-17

Similar Documents

Publication Publication Date Title
JP5893865B2 (ja) プラズマ処理装置およびマイクロ波導入装置
JP5357486B2 (ja) プラズマ処理装置
CN101803472B (zh) 等离子体处理装置
JP2009267339A (ja) プラズマ処理装置
JP2007042951A (ja) プラズマ処理装置
US20130022760A1 (en) Plasma nitriding method
JP5096047B2 (ja) マイクロ波プラズマ処理装置およびマイクロ波透過板
JP2011199003A (ja) シリコン酸化膜の形成方法、及びプラズマ処理装置
WO2014010356A1 (ja) マイクロ波導入モジュールにおけるｓパラメータ取得方法及び異常検知方法
JP5358436B2 (ja) プラズマ処理方法およびプラズマ処理装置
KR101882608B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP5479013B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP2010232493A (ja) プラズマ処理装置
JP4979389B2 (ja) プラズマ処理装置
JP2013045551A (ja) プラズマ処理装置、マイクロ波導入装置及びプラズマ処理方法
US20100307685A1 (en) Microwave plasma processing apparatus
JP2009224455A (ja) 平面アンテナ部材およびこれを備えたプラズマ処理装置
WO2011013633A1 (ja) 平面アンテナ部材およびこれを備えたプラズマ処理装置
JP5728565B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP2013033979A (ja) マイクロ波プラズマ処理装置
JP5066502B2 (ja) プラズマ処理装置
JP2009099975A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110125

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130219

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130702