JP2009218534A5 - - Google Patents
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- Publication number
- JP2009218534A5 JP2009218534A5 JP2008063706A JP2008063706A JP2009218534A5 JP 2009218534 A5 JP2009218534 A5 JP 2009218534A5 JP 2008063706 A JP2008063706 A JP 2008063706A JP 2008063706 A JP2008063706 A JP 2008063706A JP 2009218534 A5 JP2009218534 A5 JP 2009218534A5
- Authority
- JP
- Japan
- Prior art keywords
- island
- semiconductor layer
- shaped semiconductor
- substrate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 55
- 239000010410 layer Substances 0.000 claims 46
- 239000000758 substrate Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 230000003287 optical effect Effects 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008063706A JP5202046B2 (ja) | 2008-03-13 | 2008-03-13 | 半導体装置、半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008063706A JP5202046B2 (ja) | 2008-03-13 | 2008-03-13 | 半導体装置、半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013024382A Division JP5581411B2 (ja) | 2013-02-12 | 2013-02-12 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009218534A JP2009218534A (ja) | 2009-09-24 |
| JP2009218534A5 true JP2009218534A5 (enExample) | 2011-03-10 |
| JP5202046B2 JP5202046B2 (ja) | 2013-06-05 |
Family
ID=41190081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008063706A Expired - Fee Related JP5202046B2 (ja) | 2008-03-13 | 2008-03-13 | 半導体装置、半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5202046B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101669476B1 (ko) * | 2009-10-30 | 2016-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
| WO2011078373A1 (en) * | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| CN102804603B (zh) * | 2010-01-20 | 2015-07-15 | 株式会社半导体能源研究所 | 信号处理电路及其驱动方法 |
| US8450779B2 (en) * | 2010-03-08 | 2013-05-28 | International Business Machines Corporation | Graphene based three-dimensional integrated circuit device |
| CN102870220B (zh) * | 2010-04-30 | 2014-05-07 | 夏普株式会社 | 电路基板和显示装置 |
| WO2012102281A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5981711B2 (ja) | 2011-12-16 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| CN111146147B (zh) * | 2019-12-30 | 2023-04-28 | 中芯集成电路（宁波）有限公司 | 一种半导体器件集成结构及方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230177A (ja) * | 1988-07-19 | 1990-01-31 | Nec Corp | 半導体装置 |
| JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2002217106A (ja) * | 2001-01-18 | 2002-08-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4275336B2 (ja) * | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4574118B2 (ja) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| JP2005183869A (ja) * | 2003-12-24 | 2005-07-07 | Casio Comput Co Ltd | 半導体薄膜の製造方法 |
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2008
- 2008-03-13 JP JP2008063706A patent/JP5202046B2/ja not_active Expired - Fee Related