JP2009211056A5 - - Google Patents

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Publication number
JP2009211056A5
JP2009211056A5 JP2009018111A JP2009018111A JP2009211056A5 JP 2009211056 A5 JP2009211056 A5 JP 2009211056A5 JP 2009018111 A JP2009018111 A JP 2009018111A JP 2009018111 A JP2009018111 A JP 2009018111A JP 2009211056 A5 JP2009211056 A5 JP 2009211056A5
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JP
Japan
Prior art keywords
liquid crystal
microstructure
electrode
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009018111A
Other languages
English (en)
Japanese (ja)
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JP2009211056A (ja
JP5210901B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2009018111A priority Critical patent/JP5210901B2/ja
Priority claimed from JP2009018111A external-priority patent/JP5210901B2/ja
Publication of JP2009211056A publication Critical patent/JP2009211056A/ja
Publication of JP2009211056A5 publication Critical patent/JP2009211056A5/ja
Application granted granted Critical
Publication of JP5210901B2 publication Critical patent/JP5210901B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009018111A 2008-02-06 2009-01-29 液晶表示装置 Expired - Fee Related JP5210901B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009018111A JP5210901B2 (ja) 2008-02-06 2009-01-29 液晶表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008026560 2008-02-06
JP2008026560 2008-02-06
JP2009018111A JP5210901B2 (ja) 2008-02-06 2009-01-29 液晶表示装置

Publications (3)

Publication Number Publication Date
JP2009211056A JP2009211056A (ja) 2009-09-17
JP2009211056A5 true JP2009211056A5 (enExample) 2012-01-26
JP5210901B2 JP5210901B2 (ja) 2013-06-12

Family

ID=40938582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009018111A Expired - Fee Related JP5210901B2 (ja) 2008-02-06 2009-01-29 液晶表示装置

Country Status (2)

Country Link
US (1) US8203686B2 (enExample)
JP (1) JP5210901B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5877992B2 (ja) 2010-10-25 2016-03-08 株式会社半導体エネルギー研究所 表示装置
US8953120B2 (en) 2011-01-07 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20140089650A (ko) 2013-01-03 2014-07-16 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR20140095120A (ko) 2013-01-16 2014-08-01 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20150058910A (ko) 2013-11-21 2015-05-29 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20150105531A (ko) * 2014-03-06 2015-09-17 삼성디스플레이 주식회사 액정 표시 패널 및 액정 표시 패널 제조 방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247622A (ja) * 1984-05-23 1985-12-07 Oki Electric Ind Co Ltd 液晶表示装置
US5268782A (en) * 1992-01-16 1993-12-07 Minnesota Mining And Manufacturing Company Micro-ridged, polymeric liquid crystal display substrate and display device
JPH0992909A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd スイッチング素子、スイッチング素子の製造方法、およびスイッチング素子を用いた表示装置
US6304304B1 (en) * 1997-11-20 2001-10-16 Sanyo Electric Co., Ltd. Liquid crystal display having an off driving voltage greater than either zero or an optical characteristics changing voltage
JP2004295141A (ja) 1997-11-20 2004-10-21 Sanyo Electric Co Ltd 液晶表示装置
JPH11174994A (ja) * 1997-12-11 1999-07-02 Sharp Corp 表示装置
US6037719A (en) * 1998-04-09 2000-03-14 Hughes Electronics Corporation Matrix-addressed display having micromachined electromechanical switches
JP3865942B2 (ja) * 1998-07-17 2007-01-10 富士フイルムホールディングス株式会社 アクティブマトリクス素子、及びアクティブマトリクス素子を用いた発光素子、光変調素子、光検出素子、露光素子、表示装置
JP3590283B2 (ja) 1999-01-13 2004-11-17 日本電信電話株式会社 静電型可動接点素子の製造方法
JP3185793B2 (ja) * 1999-07-19 2001-07-11 松下電器産業株式会社 液晶表示素子
US6583915B1 (en) * 1999-10-08 2003-06-24 Lg. Philips Lcd Co., Ltd. Display device using a micro light modulator and fabricating method thereof
KR100634831B1 (ko) * 1999-12-04 2006-10-17 엘지.필립스 엘시디 주식회사 미세 광변조기를 이용한 투과형 표시소자
JP2002082652A (ja) * 2000-05-18 2002-03-22 Canon Inc 画像表示装置および方法
US20040031670A1 (en) * 2001-10-31 2004-02-19 Wong Marvin Glenn Method of actuating a high power micromachined switch
US20030080839A1 (en) 2001-10-31 2003-05-01 Wong Marvin Glenn Method for improving the power handling capacity of MEMS switches
US6657525B1 (en) 2002-05-31 2003-12-02 Northrop Grumman Corporation Microelectromechanical RF switch
JP4712413B2 (ja) * 2004-04-19 2011-06-29 シチズンホールディングス株式会社 可変光減衰器およびそれを備えた光学フィルタ
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4519804B2 (ja) * 2005-05-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8043950B2 (en) * 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7741687B2 (en) * 2006-03-10 2010-06-22 Semiconductor Energy Laboratory Co., Ltd. Microstructure, semiconductor device, and manufacturing method of the microstructure
CN101405215B (zh) * 2006-05-18 2013-01-09 株式会社半导体能源研究所 微结构、微机械、以及微结构和微机械的制造方法
EP1976015B1 (en) * 2007-03-26 2014-09-10 Semiconductor Energy Laboratory Co., Ltd. Switching element, method for manufacturing the same, and display device including switching element
JP5396335B2 (ja) * 2009-05-28 2014-01-22 株式会社半導体エネルギー研究所 タッチパネル

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