JP2009200050A - 注入角度に傾斜したワークピースにイオンビームを注入する方法および装置 - Google Patents
注入角度に傾斜したワークピースにイオンビームを注入する方法および装置 Download PDFInfo
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- JP2009200050A JP2009200050A JP2009109852A JP2009109852A JP2009200050A JP 2009200050 A JP2009200050 A JP 2009200050A JP 2009109852 A JP2009109852 A JP 2009109852A JP 2009109852 A JP2009109852 A JP 2009109852A JP 2009200050 A JP2009200050 A JP 2009200050A
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- Prior art keywords
- ion beam
- ion
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- parallelism
- angle
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 118
- 238000002513 implantation Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims abstract description 11
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 51
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 44
- 238000012937 correction Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
【解決手段】スキャナー20で走査されたイオンビームを角度補正器24で平行化し、半導体ウエハ34に注入するイオン注入装置において、先ず、測定システム80でビーム平行度を測定し、その結果に基づいて角度補正器24を制御して所望のビーム平行度になるよう調節する。次いで、ビームの向きを測定システム80で測定し、その結果に基づいて所望の注入角度になるように傾斜機構84を制御してプラテン36を傾斜させ、注入を実行する。
【選択図】図1
Description
12 イオンビーム
16 走査システム
20 スキャナー
24 角度補正器
26 ポールピース
28 電源
30 イオンビーム
32 エンドステーション
34 半導体ウエハ
36 プラテン
40 イオンビームソース
42 ソースフィルター
44 加減速カラム
50 質量分析計
52 ダイポール分析磁石
54 マスク
56 分解開口
60 走査原点
70 ウエハ面
80 測定システム
84 傾斜機構
Claims (12)
- イオンをワークピースに注入する方法であって,
イオンビームを発生する工程と,
平面内で、イオンビームのビームの方向を測定する工程と,
測定されたビームの向きを基準とした注入角度に,前記平面に垂直な軸に関してワークピースを傾斜する工程と,
注入角度に傾斜したワークピースでもって,注入を実行する工程と,
を含む方法。 - ワークピースを傾斜する工程が半導体ウエハを傾斜することを含む,請求項1に記載の方法。
- ワークピースを傾斜する工程が,測定されたビームの向きに実質的に垂直な軸に関して半導体ウエハを傾斜することを含む,請求項1に記載の方法。
- さらに,所望の平行度となるように,イオンビームを調節する工程を含む,請求項1に記載の方法。
- イオンをワークピースに注入する装置であって,
イオンビームを発生する手段と,
平面内で、イオンビームのビームの方向を測定する手段と,
測定されたビームの向きを基準とした注入角度に,前記平面に垂直な軸に関してワークピースを傾斜する手段と,
を含み,
注入角度に傾斜したワークピースでもって注入が実行される,ところの装置。 - 前記ワークピースを傾斜する手段がイオンビームに対して半導体ウエハを傾斜する傾斜機構を含む,請求項5に記載の装置。
- 前記ワークピースを傾斜する手段が,測定されたビームの向きに実質的に垂直な軸に関して半導体ウエハを傾斜する傾斜機構を含む,請求項5に記載の装置。
- さらに,所望の平行度となるように,イオンビームを調節する手段を含む,請求項5に記載の装置。
- イオンをワークピースに注入する装置であって,
イオンビーム発生器と,
平面内で、イオンビームのビームの向きを測定する測定システムと,
測定されたビームの向きを基準とした注入角度に,前記平面に垂直な軸に関してワークピースを傾斜する傾斜機構と,
を含み,
注入角度に傾斜したワークピースでもって注入が実行される,ところの装置。 - 前記傾斜機構が半導体ウエハを傾斜するように構成される,請求項9に記載の装置。
- 前記傾斜機構が,測定されたビームの向きに実質的に垂直な軸に関して半導体ウエハを傾斜するように構成される,請求項9に記載の注入装置。
- さらに,所望の平行度となるように,イオンビームを調節する光学要素を含む,請求項9に記載の注入装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/649,183 US6437350B1 (en) | 2000-08-28 | 2000-08-28 | Methods and apparatus for adjusting beam parallelism in ion implanters |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002524182A Division JP4334865B2 (ja) | 2000-08-28 | 2001-07-13 | イオン注入器のビーム平行度を調節する方法および装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009200050A true JP2009200050A (ja) | 2009-09-03 |
Family
ID=24603771
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002524182A Expired - Lifetime JP4334865B2 (ja) | 2000-08-28 | 2001-07-13 | イオン注入器のビーム平行度を調節する方法および装置 |
JP2009109852A Pending JP2009200050A (ja) | 2000-08-28 | 2009-04-28 | 注入角度に傾斜したワークピースにイオンビームを注入する方法および装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002524182A Expired - Lifetime JP4334865B2 (ja) | 2000-08-28 | 2001-07-13 | イオン注入器のビーム平行度を調節する方法および装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6437350B1 (ja) |
EP (1) | EP1314179A2 (ja) |
JP (2) | JP4334865B2 (ja) |
KR (1) | KR100681968B1 (ja) |
IL (2) | IL154563A0 (ja) |
TW (1) | TWI295809B (ja) |
WO (1) | WO2002019374A2 (ja) |
Families Citing this family (43)
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TW297158B (ja) * | 1994-05-27 | 1997-02-01 | Hitachi Ltd | |
JP2000183139A (ja) * | 1998-12-17 | 2000-06-30 | Hitachi Ltd | イオン注入装置 |
US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
US6573518B1 (en) * | 2000-10-30 | 2003-06-03 | Varian Semiconductor Equipment Associates, Inc. | Bi mode ion implantation with non-parallel ion beams |
WO2002058103A2 (en) * | 2001-01-17 | 2002-07-25 | Varian Semiconductor Equipment Associates, Inc. | In situ ion beam incidence angle and beam divergence monitor |
US6933507B2 (en) * | 2002-07-17 | 2005-08-23 | Kenneth H. Purser | Controlling the characteristics of implanter ion-beams |
KR100478485B1 (ko) * | 2002-10-02 | 2005-03-28 | 동부아남반도체 주식회사 | 반도체 소자의 이온 주입 각도 조정방법 |
US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
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US7232744B2 (en) * | 2004-10-01 | 2007-06-19 | Texas Instruments Incorporated | Method for implanting dopants within a substrate by tilting the substrate relative to the implant source |
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JP4452848B2 (ja) * | 2004-12-13 | 2010-04-21 | 独立行政法人放射線医学総合研究所 | 荷電粒子線照射装置および回転ガントリ |
KR100600356B1 (ko) * | 2004-12-29 | 2006-07-18 | 동부일렉트로닉스 주식회사 | 이온 주입 장비의 각 제로 위치 보정방법 |
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CN101490791B (zh) * | 2006-06-12 | 2011-04-13 | 艾克塞利斯科技公司 | 离子注入机内的射束角度调节 |
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JP5041260B2 (ja) | 2010-06-04 | 2012-10-03 | 日新イオン機器株式会社 | イオン注入装置 |
TWI686838B (zh) | 2014-12-26 | 2020-03-01 | 美商艾克塞利斯科技公司 | 改善混合式掃描離子束植入機之生產力的系統及方法 |
CN107221485B (zh) * | 2017-06-02 | 2019-02-05 | 东莞帕萨电子装备有限公司 | 一种离子束流调节装置 |
US11195720B2 (en) * | 2018-10-29 | 2021-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target |
CN111769026B (zh) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | 一种束流性质测量装置及方法 |
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JPH025346A (ja) * | 1988-06-15 | 1990-01-10 | Teru Barian Kk | イオン注入装置およびイオンビームの調整方法 |
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JPH11126576A (ja) * | 1997-10-22 | 1999-05-11 | Nissin Electric Co Ltd | イオン注入装置 |
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2000
- 2000-08-28 US US09/649,183 patent/US6437350B1/en not_active Ceased
-
2001
- 2001-07-13 JP JP2002524182A patent/JP4334865B2/ja not_active Expired - Lifetime
- 2001-07-13 WO PCT/US2001/022392 patent/WO2002019374A2/en not_active Application Discontinuation
- 2001-07-13 KR KR1020037002940A patent/KR100681968B1/ko active IP Right Grant
- 2001-07-13 EP EP01954716A patent/EP1314179A2/en not_active Withdrawn
- 2001-07-13 IL IL15456301A patent/IL154563A0/xx unknown
- 2001-07-20 TW TW090117779A patent/TWI295809B/zh not_active IP Right Cessation
-
2003
- 2003-02-20 IL IL154563A patent/IL154563A/en not_active IP Right Cessation
-
2004
- 2004-08-20 US US10/922,783 patent/USRE40009E1/en not_active Expired - Lifetime
-
2009
- 2009-04-28 JP JP2009109852A patent/JP2009200050A/ja active Pending
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JPH025346A (ja) * | 1988-06-15 | 1990-01-10 | Teru Barian Kk | イオン注入装置およびイオンビームの調整方法 |
JPH02288142A (ja) * | 1989-04-28 | 1990-11-28 | Nissin Electric Co Ltd | イオンビームの平行度測定方法 |
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Also Published As
Publication number | Publication date |
---|---|
KR20030029877A (ko) | 2003-04-16 |
WO2002019374A2 (en) | 2002-03-07 |
TWI295809B (en) | 2008-04-11 |
WO2002019374A3 (en) | 2002-06-06 |
IL154563A0 (en) | 2003-09-17 |
JP2004511880A (ja) | 2004-04-15 |
EP1314179A2 (en) | 2003-05-28 |
US6437350B1 (en) | 2002-08-20 |
JP4334865B2 (ja) | 2009-09-30 |
USRE40009E1 (en) | 2008-01-22 |
KR100681968B1 (ko) | 2007-02-15 |
IL154563A (en) | 2009-08-03 |
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