IL154563A0 - Methods and apparatus for adjusting beam parallelism in ion implanters - Google Patents
Methods and apparatus for adjusting beam parallelism in ion implantersInfo
- Publication number
- IL154563A0 IL154563A0 IL15456301A IL15456301A IL154563A0 IL 154563 A0 IL154563 A0 IL 154563A0 IL 15456301 A IL15456301 A IL 15456301A IL 15456301 A IL15456301 A IL 15456301A IL 154563 A0 IL154563 A0 IL 154563A0
- Authority
- IL
- Israel
- Prior art keywords
- methods
- adjusting beam
- ion implanters
- beam parallelism
- parallelism
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/649,183 US6437350B1 (en) | 2000-08-28 | 2000-08-28 | Methods and apparatus for adjusting beam parallelism in ion implanters |
PCT/US2001/022392 WO2002019374A2 (en) | 2000-08-28 | 2001-07-13 | Methods and apparatus for adjusting beam parallelism in ion implanters |
Publications (1)
Publication Number | Publication Date |
---|---|
IL154563A0 true IL154563A0 (en) | 2003-09-17 |
Family
ID=24603771
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL15456301A IL154563A0 (en) | 2000-08-28 | 2001-07-13 | Methods and apparatus for adjusting beam parallelism in ion implanters |
IL154563A IL154563A (en) | 2000-08-28 | 2003-02-20 | Methods and device for adjusting the parallelism of a beam in ion implants |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL154563A IL154563A (en) | 2000-08-28 | 2003-02-20 | Methods and device for adjusting the parallelism of a beam in ion implants |
Country Status (7)
Country | Link |
---|---|
US (2) | US6437350B1 (ja) |
EP (1) | EP1314179A2 (ja) |
JP (2) | JP4334865B2 (ja) |
KR (1) | KR100681968B1 (ja) |
IL (2) | IL154563A0 (ja) |
TW (1) | TWI295809B (ja) |
WO (1) | WO2002019374A2 (ja) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW297158B (ja) * | 1994-05-27 | 1997-02-01 | Hitachi Ltd | |
JP2000183139A (ja) * | 1998-12-17 | 2000-06-30 | Hitachi Ltd | イオン注入装置 |
US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
US6573518B1 (en) * | 2000-10-30 | 2003-06-03 | Varian Semiconductor Equipment Associates, Inc. | Bi mode ion implantation with non-parallel ion beams |
US6690022B2 (en) * | 2001-01-17 | 2004-02-10 | Varian Semiconductor Equipment Associates, Inc. | Ion beam incidence angle and beam divergence monitor |
US6933507B2 (en) * | 2002-07-17 | 2005-08-23 | Kenneth H. Purser | Controlling the characteristics of implanter ion-beams |
KR100478485B1 (ko) * | 2002-10-02 | 2005-03-28 | 동부아남반도체 주식회사 | 반도체 소자의 이온 주입 각도 조정방법 |
US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
US6677598B1 (en) * | 2003-04-29 | 2004-01-13 | Axcelis Technologies, Inc. | Beam uniformity and angular distribution measurement system |
JP2005064033A (ja) * | 2003-08-12 | 2005-03-10 | Fujio Masuoka | 半導体基板へのイオン注入方法 |
JP2005353537A (ja) * | 2004-06-14 | 2005-12-22 | Ulvac Japan Ltd | イオン注入装置 |
US7232744B2 (en) * | 2004-10-01 | 2007-06-19 | Texas Instruments Incorporated | Method for implanting dopants within a substrate by tilting the substrate relative to the implant source |
US7442944B2 (en) | 2004-10-07 | 2008-10-28 | Varian Semiconductor Equipment Associates, Inc. | Ion beam implant current, spot width and position tuning |
JP4452848B2 (ja) * | 2004-12-13 | 2010-04-21 | 独立行政法人放射線医学総合研究所 | 荷電粒子線照射装置および回転ガントリ |
KR100600356B1 (ko) * | 2004-12-29 | 2006-07-18 | 동부일렉트로닉스 주식회사 | 이온 주입 장비의 각 제로 위치 보정방법 |
US20060145095A1 (en) * | 2004-12-30 | 2006-07-06 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion implantation with control of incidence angle by beam deflection |
JP4093235B2 (ja) | 2005-01-17 | 2008-06-04 | 日新イオン機器株式会社 | イオン注入装置用の角度計測装置および関連装置 |
US7868305B2 (en) * | 2005-03-16 | 2011-01-11 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle spread control |
US7348576B2 (en) * | 2005-03-16 | 2008-03-25 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle process control |
US7394078B2 (en) * | 2005-03-16 | 2008-07-01 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle spread control for advanced applications |
KR100673009B1 (ko) * | 2005-08-01 | 2007-01-24 | 삼성전자주식회사 | 빔 프로파일러 센터 측정 장치, 그리고 이를 이용하는 이온주입 설비 및 그 방법 |
KR100668217B1 (ko) * | 2005-08-11 | 2007-01-11 | 동부일렉트로닉스 주식회사 | 틸트 이온 주입에서 도즈량 상호 보정방법 |
US7329882B2 (en) * | 2005-11-29 | 2008-02-12 | Axcelis Technologies, Inc. | Ion implantation beam angle calibration |
US7361914B2 (en) * | 2005-11-30 | 2008-04-22 | Axcelis Technologies, Inc. | Means to establish orientation of ion beam to wafer and correct angle errors |
US20080073553A1 (en) * | 2006-02-13 | 2008-03-27 | Ibis Technology Corporation | Ion beam profiler |
US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
US7397049B2 (en) * | 2006-03-22 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Determining ion beam parallelism using refraction method |
CN100378915C (zh) * | 2006-04-07 | 2008-04-02 | 北京中科信电子装备有限公司 | 一种平行束注入角度测量方法 |
JP5560036B2 (ja) * | 2006-06-12 | 2014-07-23 | アクセリス テクノロジーズ, インコーポレイテッド | イオン注入装置におけるビーム角調節 |
US7227160B1 (en) * | 2006-09-13 | 2007-06-05 | Axcelis Technologies, Inc. | Systems and methods for beam angle adjustment in ion implanters |
US7812325B2 (en) * | 2006-09-28 | 2010-10-12 | Varian Semiconductor Equipment Associates, Inc. | Implanting with improved uniformity and angle control on tilted wafers |
US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
CN101414545B (zh) * | 2007-10-17 | 2010-10-13 | 北京中科信电子装备有限公司 | 一种平行束角度测量法拉第装置 |
US7820985B2 (en) * | 2007-12-28 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | High tilt implant angle performance using in-axis tilt |
US7994488B2 (en) * | 2008-04-24 | 2011-08-09 | Axcelis Technologies, Inc. | Low contamination, low energy beamline architecture for high current ion implantation |
US7897944B2 (en) * | 2008-07-21 | 2011-03-01 | Axcelis Technologies, Inc. | Method and apparatus for measurement of beam angle in ion implantation |
US7973290B2 (en) * | 2008-08-13 | 2011-07-05 | Axcelis Technologies, Inc. | System and method of beam energy identification for single wafer ion implantation |
US8164070B2 (en) * | 2008-12-05 | 2012-04-24 | Nissin Ion Equipment Co., Ltd. | Collimator magnet for ion implantation system |
JP5041260B2 (ja) | 2010-06-04 | 2012-10-03 | 日新イオン機器株式会社 | イオン注入装置 |
TWI686838B (zh) | 2014-12-26 | 2020-03-01 | 美商艾克塞利斯科技公司 | 改善混合式掃描離子束植入機之生產力的系統及方法 |
CN107221485B (zh) * | 2017-06-02 | 2019-02-05 | 东莞帕萨电子装备有限公司 | 一种离子束流调节装置 |
US11195720B2 (en) * | 2018-10-29 | 2021-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target |
CN111769026B (zh) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | 一种束流性质测量装置及方法 |
WO2024142648A1 (ja) * | 2022-12-26 | 2024-07-04 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置、イオン注入方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021675A (en) | 1973-02-20 | 1977-05-03 | Hughes Aircraft Company | System for controlling ion implantation dosage in electronic materials |
US4922106A (en) | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
JPH025346A (ja) * | 1988-06-15 | 1990-01-10 | Teru Barian Kk | イオン注入装置およびイオンビームの調整方法 |
JP2765043B2 (ja) * | 1989-04-28 | 1998-06-11 | 日新電機株式会社 | イオンビームの平行度測定方法 |
JPH0317949A (ja) | 1989-06-14 | 1991-01-25 | Ulvac Corp | イオン注入装置におけるビーム平行度測定装置 |
JP2648642B2 (ja) | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
JP2969788B2 (ja) * | 1990-05-17 | 1999-11-02 | 日新電機株式会社 | イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置 |
JPH0525629A (ja) * | 1991-07-18 | 1993-02-02 | Tel Varian Ltd | イオン注入装置 |
JPH0613013A (ja) | 1992-06-29 | 1994-01-21 | Sumitomo Electric Ind Ltd | イオンビームを集束して加工を行う装置 |
US5350926A (en) | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
JPH0714547U (ja) * | 1993-08-16 | 1995-03-10 | 日新電機株式会社 | イオン注入装置 |
US5757018A (en) | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
US5641969A (en) | 1996-03-28 | 1997-06-24 | Applied Materials, Inc. | Ion implantation apparatus |
US5834786A (en) | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
US5898179A (en) | 1997-09-10 | 1999-04-27 | Orion Equipment, Inc. | Method and apparatus for controlling a workpiece in a vacuum chamber |
JP3449198B2 (ja) * | 1997-10-22 | 2003-09-22 | 日新電機株式会社 | イオン注入装置 |
JP3567749B2 (ja) | 1998-07-22 | 2004-09-22 | 日新電機株式会社 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
US6255662B1 (en) | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
US6791094B1 (en) | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
US6403972B1 (en) | 1999-07-08 | 2002-06-11 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for alignment of ion beam systems using beam current sensors |
GB2355336B (en) | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter with wafer angle and faraday alignment checking |
US6555832B1 (en) | 1999-10-13 | 2003-04-29 | Applied Materials, Inc. | Determining beam alignment in ion implantation using Rutherford Back Scattering |
US6573518B1 (en) | 2000-10-30 | 2003-06-03 | Varian Semiconductor Equipment Associates, Inc. | Bi mode ion implantation with non-parallel ion beams |
-
2000
- 2000-08-28 US US09/649,183 patent/US6437350B1/en not_active Ceased
-
2001
- 2001-07-13 JP JP2002524182A patent/JP4334865B2/ja not_active Expired - Lifetime
- 2001-07-13 IL IL15456301A patent/IL154563A0/xx unknown
- 2001-07-13 WO PCT/US2001/022392 patent/WO2002019374A2/en not_active Application Discontinuation
- 2001-07-13 KR KR1020037002940A patent/KR100681968B1/ko active IP Right Grant
- 2001-07-13 EP EP01954716A patent/EP1314179A2/en not_active Withdrawn
- 2001-07-20 TW TW090117779A patent/TWI295809B/zh not_active IP Right Cessation
-
2003
- 2003-02-20 IL IL154563A patent/IL154563A/en not_active IP Right Cessation
-
2004
- 2004-08-20 US US10/922,783 patent/USRE40009E1/en not_active Expired - Lifetime
-
2009
- 2009-04-28 JP JP2009109852A patent/JP2009200050A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI295809B (en) | 2008-04-11 |
JP2009200050A (ja) | 2009-09-03 |
US6437350B1 (en) | 2002-08-20 |
USRE40009E1 (en) | 2008-01-22 |
WO2002019374A2 (en) | 2002-03-07 |
EP1314179A2 (en) | 2003-05-28 |
KR20030029877A (ko) | 2003-04-16 |
WO2002019374A3 (en) | 2002-06-06 |
IL154563A (en) | 2009-08-03 |
JP4334865B2 (ja) | 2009-09-30 |
KR100681968B1 (ko) | 2007-02-15 |
JP2004511880A (ja) | 2004-04-15 |
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