JP2009170893A - 可撓性半導体組立体を製造する方法 - Google Patents

可撓性半導体組立体を製造する方法 Download PDF

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Publication number
JP2009170893A
JP2009170893A JP2008313895A JP2008313895A JP2009170893A JP 2009170893 A JP2009170893 A JP 2009170893A JP 2008313895 A JP2008313895 A JP 2008313895A JP 2008313895 A JP2008313895 A JP 2008313895A JP 2009170893 A JP2009170893 A JP 2009170893A
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JP
Japan
Prior art keywords
wafer
flexible
die
semiconductor
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008313895A
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English (en)
Japanese (ja)
Other versions
JP2009170893A5 (https=
Inventor
David R Scheid
デーヴィッド・アール・シェイド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2009170893A publication Critical patent/JP2009170893A/ja
Publication of JP2009170893A5 publication Critical patent/JP2009170893A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0074—3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dicing (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2008313895A 2007-12-10 2008-12-10 可撓性半導体組立体を製造する方法 Pending JP2009170893A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/953,541 US7790502B2 (en) 2007-12-10 2007-12-10 Method of manufacturing flexible semiconductor assemblies

Publications (2)

Publication Number Publication Date
JP2009170893A true JP2009170893A (ja) 2009-07-30
JP2009170893A5 JP2009170893A5 (https=) 2012-02-02

Family

ID=40379786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008313895A Pending JP2009170893A (ja) 2007-12-10 2008-12-10 可撓性半導体組立体を製造する方法

Country Status (3)

Country Link
US (1) US7790502B2 (https=)
EP (1) EP2071618A3 (https=)
JP (1) JP2009170893A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7767543B2 (en) 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
US8053279B2 (en) * 2007-06-19 2011-11-08 Micron Technology, Inc. Methods and systems for imaging and cutting semiconductor wafers and other semiconductor workpieces
DE102015219190A1 (de) * 2015-10-05 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen eines elektronischen Bauelements und elektronisches Bauelement
CN105513974B (zh) * 2016-01-11 2018-06-19 苏州工业园区纳米产业技术研究院有限公司 一种基于单晶圆的硅帽加盖方法
US10153317B1 (en) 2018-04-26 2018-12-11 Alentic Microscience Inc. Image sensors comprising a chamber to confine a sample at a sensor surface of successive light sensitive subareas and non-light sensitive areas
DE102019201228B4 (de) * 2019-01-31 2023-10-05 Robert Bosch Gmbh Verfahren zum Herstellen einer Mehrzahl von Sensoreinrichtungen und Sensoreinrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051144A (ja) * 2003-07-31 2005-02-24 Shinko Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5419038A (en) * 1993-06-17 1995-05-30 Fujitsu Limited Method for fabricating thin-film interconnector
DE19536608A1 (de) * 1995-09-30 1997-04-03 Hoechst Ag Emulgatorsystem für wasserverdünnbare Epoxidharzsysteme mit Topfzeit-Anzeige
US5952725A (en) * 1996-02-20 1999-09-14 Micron Technology, Inc. Stacked semiconductor devices
JP2002237568A (ja) 2000-12-28 2002-08-23 Texas Instr Inc <Ti> 基板上垂直組立体用の折り曲げた相互接続体上にスタックしたチップスケールパッケージ
CN101069099A (zh) 2003-02-24 2007-11-07 佛罗里达大学 微机械加工的集成单片三轴加速度计
US6918297B2 (en) 2003-02-28 2005-07-19 Honeywell International, Inc. Miniature 3-dimensional package for MEMS sensors
US7095226B2 (en) 2003-12-04 2006-08-22 Honeywell International, Inc. Vertical die chip-on-board
US7271586B2 (en) 2003-12-04 2007-09-18 Honeywell International Inc. Single package design for 3-axis magnetic sensor
US7067352B1 (en) * 2004-03-08 2006-06-27 David Ralph Scheid Vertical integrated package apparatus and method
US7566634B2 (en) * 2004-09-24 2009-07-28 Interuniversitair Microelektronica Centrum (Imec) Method for chip singulation
JP4724488B2 (ja) 2005-02-25 2011-07-13 日立オートモティブシステムズ株式会社 集積化マイクロエレクトロメカニカルシステム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051144A (ja) * 2003-07-31 2005-02-24 Shinko Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US20090148983A1 (en) 2009-06-11
EP2071618A3 (en) 2012-06-06
US7790502B2 (en) 2010-09-07
EP2071618A2 (en) 2009-06-17

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