JP2009164471A5 - - Google Patents
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- Publication number
- JP2009164471A5 JP2009164471A5 JP2008002296A JP2008002296A JP2009164471A5 JP 2009164471 A5 JP2009164471 A5 JP 2009164471A5 JP 2008002296 A JP2008002296 A JP 2008002296A JP 2008002296 A JP2008002296 A JP 2008002296A JP 2009164471 A5 JP2009164471 A5 JP 2009164471A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- copper
- alloy layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims 19
- 230000004888 barrier function Effects 0.000 claims 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 13
- 229910052802 copper Inorganic materials 0.000 claims 13
- 239000010949 copper Substances 0.000 claims 13
- 239000010410 layer Substances 0.000 claims 13
- 239000000956 alloy Substances 0.000 claims 12
- 229910045601 alloy Inorganic materials 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000011229 interlayer Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 230000033116 oxidation-reduction process Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 3
- 238000007747 plating Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910018565 CuAl Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008002296A JP2009164471A (ja) | 2008-01-09 | 2008-01-09 | 高信頼性銅配線及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008002296A JP2009164471A (ja) | 2008-01-09 | 2008-01-09 | 高信頼性銅配線及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009164471A JP2009164471A (ja) | 2009-07-23 |
| JP2009164471A5 true JP2009164471A5 (enrdf_load_stackoverflow) | 2010-12-24 |
Family
ID=40966712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008002296A Withdrawn JP2009164471A (ja) | 2008-01-09 | 2008-01-09 | 高信頼性銅配線及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009164471A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8531033B2 (en) | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
| JP5544893B2 (ja) | 2010-01-20 | 2014-07-09 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
| TWI458072B (zh) * | 2010-12-16 | 2014-10-21 | Soitec Silicon On Insulator | 將半導體構造直接黏附在一起之方法以及應用此等方法所形成之黏附半導體構造 |
| US8778773B2 (en) | 2010-12-16 | 2014-07-15 | Soitec | Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods |
| JP5969306B2 (ja) * | 2012-08-08 | 2016-08-17 | 東京エレクトロン株式会社 | Ｃｕ配線の形成方法 |
| JP2016111104A (ja) | 2014-12-03 | 2016-06-20 | 株式会社Ｊｏｌｅｄ | 薄膜半導体基板の製造方法 |
-
2008
- 2008-01-09 JP JP2008002296A patent/JP2009164471A/ja not_active Withdrawn
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