JP2009164471A - 高信頼性銅配線及びその製造方法 - Google Patents

高信頼性銅配線及びその製造方法 Download PDF

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Publication number
JP2009164471A
JP2009164471A JP2008002296A JP2008002296A JP2009164471A JP 2009164471 A JP2009164471 A JP 2009164471A JP 2008002296 A JP2008002296 A JP 2008002296A JP 2008002296 A JP2008002296 A JP 2008002296A JP 2009164471 A JP2009164471 A JP 2009164471A
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Japan
Prior art keywords
film
copper
wiring
semiconductor device
alloy layer
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JP2008002296A
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Japanese (ja)
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JP2009164471A5 (enExample
Inventor
Akihisa Iwasaki
晃久 岩崎
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Panasonic Corp
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Panasonic Corp
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Priority to JP2008002296A priority Critical patent/JP2009164471A/ja
Publication of JP2009164471A publication Critical patent/JP2009164471A/ja
Publication of JP2009164471A5 publication Critical patent/JP2009164471A5/ja
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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2008002296A 2008-01-09 2008-01-09 高信頼性銅配線及びその製造方法 Withdrawn JP2009164471A (ja)

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JP2008002296A JP2009164471A (ja) 2008-01-09 2008-01-09 高信頼性銅配線及びその製造方法

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JP2008002296A JP2009164471A (ja) 2008-01-09 2008-01-09 高信頼性銅配線及びその製造方法

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JP2009164471A true JP2009164471A (ja) 2009-07-23
JP2009164471A5 JP2009164471A5 (enExample) 2010-12-24

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110085909A (ko) 2010-01-20 2011-07-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기억 매체
JP2012129521A (ja) * 2010-12-16 2012-07-05 Soytec 半導体構造同士を直接結合する方法、およびこの方法を使用して形成された結合された半導体構造
US8531033B2 (en) 2009-09-07 2013-09-10 Advanced Interconnect Materials, Llc Contact plug structure, semiconductor device, and method for forming contact plug
KR20140020203A (ko) * 2012-08-08 2014-02-18 도쿄엘렉트론가부시키가이샤 Cu 배선의 형성 방법 및 기억매체
US8778773B2 (en) 2010-12-16 2014-07-15 Soitec Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
US9595601B2 (en) 2014-12-03 2017-03-14 Joled, Inc. Method of fabricating thin-film semiconductor substrate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8531033B2 (en) 2009-09-07 2013-09-10 Advanced Interconnect Materials, Llc Contact plug structure, semiconductor device, and method for forming contact plug
KR20110085909A (ko) 2010-01-20 2011-07-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기억 매체
US8870164B2 (en) 2010-01-20 2014-10-28 Tokyo Electron Limited Substrate processing method and storage medium
JP2012129521A (ja) * 2010-12-16 2012-07-05 Soytec 半導体構造同士を直接結合する方法、およびこの方法を使用して形成された結合された半導体構造
US8778773B2 (en) 2010-12-16 2014-07-15 Soitec Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
KR20140020203A (ko) * 2012-08-08 2014-02-18 도쿄엘렉트론가부시키가이샤 Cu 배선의 형성 방법 및 기억매체
KR101662369B1 (ko) * 2012-08-08 2016-10-04 도쿄엘렉트론가부시키가이샤 Cu 배선의 형성 방법 및 기억매체
US9595601B2 (en) 2014-12-03 2017-03-14 Joled, Inc. Method of fabricating thin-film semiconductor substrate

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