JP2009158733A5 - - Google Patents

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Publication number
JP2009158733A5
JP2009158733A5 JP2007335516A JP2007335516A JP2009158733A5 JP 2009158733 A5 JP2009158733 A5 JP 2009158733A5 JP 2007335516 A JP2007335516 A JP 2007335516A JP 2007335516 A JP2007335516 A JP 2007335516A JP 2009158733 A5 JP2009158733 A5 JP 2009158733A5
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JP
Japan
Prior art keywords
vacuum
transfer chamber
chamber
pipe
waveguide
Prior art date
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Granted
Application number
JP2007335516A
Other languages
English (en)
Japanese (ja)
Other versions
JP5596265B2 (ja
JP2009158733A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007335516A external-priority patent/JP5596265B2/ja
Priority to JP2007335516A priority Critical patent/JP5596265B2/ja
Priority to TW102119148A priority patent/TW201338037A/zh
Priority to TW097106066A priority patent/TWI445076B/zh
Priority to KR1020080018591A priority patent/KR100978887B1/ko
Priority to US12/039,994 priority patent/US20090165952A1/en
Publication of JP2009158733A publication Critical patent/JP2009158733A/ja
Priority to KR1020100060189A priority patent/KR101116875B1/ko
Publication of JP2009158733A5 publication Critical patent/JP2009158733A5/ja
Publication of JP5596265B2 publication Critical patent/JP5596265B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007335516A 2007-12-27 2007-12-27 真空処理装置 Active JP5596265B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007335516A JP5596265B2 (ja) 2007-12-27 2007-12-27 真空処理装置
TW102119148A TW201338037A (zh) 2007-12-27 2008-02-21 真空處理裝置
TW097106066A TWI445076B (zh) 2007-12-27 2008-02-21 Vacuum processing device
KR1020080018591A KR100978887B1 (ko) 2007-12-27 2008-02-28 진공처리장치
US12/039,994 US20090165952A1 (en) 2007-12-27 2008-02-29 Vacuum processing apparatus
KR1020100060189A KR101116875B1 (ko) 2007-12-27 2010-06-24 진공처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007335516A JP5596265B2 (ja) 2007-12-27 2007-12-27 真空処理装置

Publications (3)

Publication Number Publication Date
JP2009158733A JP2009158733A (ja) 2009-07-16
JP2009158733A5 true JP2009158733A5 (cg-RX-API-DMAC7.html) 2011-03-10
JP5596265B2 JP5596265B2 (ja) 2014-09-24

Family

ID=40796666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007335516A Active JP5596265B2 (ja) 2007-12-27 2007-12-27 真空処理装置

Country Status (4)

Country Link
US (1) US20090165952A1 (cg-RX-API-DMAC7.html)
JP (1) JP5596265B2 (cg-RX-API-DMAC7.html)
KR (2) KR100978887B1 (cg-RX-API-DMAC7.html)
TW (2) TWI445076B (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5260981B2 (ja) * 2008-02-22 2013-08-14 株式会社日立ハイテクノロジーズ 真空処理装置
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US9991139B2 (en) * 2012-12-03 2018-06-05 Asm Ip Holding B.V. Modular vertical furnace processing system
JP6609425B2 (ja) * 2015-06-17 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN113436984B (zh) * 2020-03-23 2024-12-06 台湾积体电路制造股份有限公司 用于半导体制程机台的设备接口系统
CN112317745B (zh) * 2020-09-22 2022-05-10 成都飞机工业（集团）有限责任公司 一种自动化增材制造粉末存储装置及存储方法
CN120659950A (zh) * 2023-02-06 2025-09-16 应用材料公司 用于处理光学装置的模块、系统及方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982493A (ja) * 1995-09-14 1997-03-28 Tokyo Electron Ltd プラズマ処理装置
KR100193886B1 (ko) * 1996-05-03 1999-06-15 김영환 플라즈마 식각 장비 및 그를 이용한 식각 방법
JP3454034B2 (ja) * 1996-09-13 2003-10-06 株式会社日立製作所 真空処理装置
US5844195A (en) * 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
JPH11145251A (ja) 1997-08-15 1999-05-28 Tokyo Electron Ltd 基板処理装置
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
JP2000021870A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理装置
JP2000133597A (ja) * 1998-10-22 2000-05-12 Tadahiro Omi 半導体製造装置
JP2000269149A (ja) * 1999-03-19 2000-09-29 Rohm Co Ltd 半導体基板に対するプラズマ表面処理装置
JP2001007117A (ja) * 1999-06-24 2001-01-12 Tokyo Electron Ltd 処理装置及び処理方法
US6860965B1 (en) * 2000-06-23 2005-03-01 Novellus Systems, Inc. High throughput architecture for semiconductor processing
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP2006080347A (ja) 2004-09-10 2006-03-23 Hitachi High-Technologies Corp プラズマ処理装置
JP4694249B2 (ja) * 2005-04-20 2011-06-08 株式会社日立ハイテクノロジーズ 真空処理装置及び試料の真空処理方法
JP5030410B2 (ja) * 2005-09-28 2012-09-19 株式会社日立ハイテクノロジーズ 真空処理装置
KR100758298B1 (ko) 2006-03-03 2007-09-12 삼성전자주식회사 기판 처리 장치 및 방법

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