201028489 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於處理裝置。 【先前技術】 近年來，液晶顯示器之大型化係進行，作爲處理基板 ，例如，係成爲使用有第1 1世代（3000mmx3320mm )尺 φ 寸之玻璃基板。在此液晶顯示器之製造中，係使用有進行 配線用金屬膜之成膜製程的濺鍍裝置、或是進行加熱處理 之加熱處理裝置等的多數之處理裝置。此些之處理裝置， 係具備有用以進行特定之製程的真空處理室。 伴隨著處理基板之大型化，處理裝置之處理室本身亦 有必要以成爲能夠涵蓋此處理基板之全面而將成膜製程等 一括性實行的方式而大型化。於此情況，若是從一個的大 型之鋁塊來削出並製作大型的真空處理室，則由於係成爲 # 需要專用之大型切削加工裝置等，而會使真空處理室本身 之製作費用變高。 . 又，在大型之真空處理室中，係成爲需要大型之拖車 等的輸送手段，而成爲不便，又，依存於其之尺寸或是重 量，亦會有受到法令等之限制而無法輸送的情況。 因此’係週知有下述一般之真空處理室，其係具備有 2以上之被形成有貫通孔的略直方體之處理室構件，並將 相鄰接之處理室構件以貫通孔相通連的狀態來藉由密封構 件而抵接所成（例如，參考專利文獻1 )。 201028489 [先前技術文獻i [專利文獻] [專利文獻1]日本特開2008-1973 74號公報（圖1、3 以及申請項1 ) 【發明內容】 [發明所欲解決之課題] @ 上述之真空處理室，係具備有下述之優點：亦即是， 能夠將各處理室構件輸送至設置場所處，並在設置場所處 作接合而作成真空處理室。然而，伴隨著近年之基板尺寸 的更加大型化，在設置場所處，亦被要求有使用有更爲緊 緻之真空處理室的加熱處理裝置。 因此，本發明之課題，係爲了消除上述先前技術之問 題點，而以提供一種使用有輸送係爲便利且爲緊緻的真空 處理室之處理裝置爲目的。 @ [用以解決課題之手段] 本發明之處理裝置，其特徵爲，具備有：真空處理室 ，其係具備：處理室本體，係由具備被形成爲可將基板作 插入之貫通孔的方塊狀之複數的處理室構件所成，並在相 鄰接之處理室構件的至少其中一方處，涵蓋與另外一方間 之抵接面的前述貫通孔之開口部的周圍，而連續地設置溝 ，且各處理室構件，係以隔著被裝著於前述溝處之密封構 -6 - 201028489 件而分別被密接的狀態而被固定，而具備有以複數之貫通 孔所構成之處理空間、和壁面構件，係將前述處理空間之 其中一方的開口作密封、和蓋構件，係將前述處理空間之 另外一方的開口可開閉地作塡塞，在各處理空間中，係具 備有：加熱手段，係經由輻射熱而將前述基板作加熱；和 一對之基板支持構件，係分別被配置在此加熱手段之上下 ，並將各基板以對象於前述加熱手段的方式來作支持。 φ 在本發明中，係構成爲：於1個的處理空間中，在加 熱手段之上下而被設置有一對之基板支持構件，而此基板 支持構件係分別將基板作支持。亦即是，在本發明中，係 構成爲能夠在1個的處理空間中對複數枚之基板作處理。 藉由採用此種構成，就算是對相同枚數進行處理之裝置， 相較於先前技術之處理裝置，本發明之處理裝置成爲更緊 緻且製作材料更少者。又，本處理裝置，由於係由複數之 處理構件所構成，故係容易輸送。 φ 於此，較理想，前述加熱手段與藉由各基板支持構件 所支持之各基板間的距離，係爲相等。藉由設爲此種構成 ，在1個的處理空間中之各基板，係分別被加熱至相同溫 度。 作爲本發明之理想實施形態，係可列舉有：前述加熱 手段，係具備有作爲加熱源之鞘型加熱器。 又，係以下述一般之構成爲理想：在前述加熱手段之 表面上，係爲了提昇輻射效率，而被形成著包含有將輻射 效率提昇之材料的被覆膜，或是被設置有藉由提昇輻射效 201028489 率之材料所形成的被覆板。 較理想，前述一對之基板支持構件，係分別由棒狀之 基底構件、和被立設在此基底構件上的複數之基板支持銷 所成，其中一方之基板支持構件，係被固定在前述加熱手 段之上面，而另外一方之基板支持構件，係被設置在前述 處理空間之底面處。藉由設爲此種構成，不會對於在1個 的處理空間中之複數枚之基板的加熱作抑制，而能夠將基 板簡易地作保持。 於此情況，較理想，前述基底構件，係在其之長度方 向的複數場所處，具備有可彎曲之轉樞部。藉由設爲此種 構成，而能夠將對應於大型基板之大型的支持構件作彎折 ，而例如在維修時，藉由將支持構件作彎折，而能夠容易 地從處理空間來取出，在處理上係爲容易。 [發明之效果] 若藉由本發明之處理裝置，則在輸送上係爲便利，且 ❹ 由於係設爲能夠對在1個的處理空間中之複數枚之基板作 處理的構成，因此，能夠得到可將裝置全體更爲緊緻地構 成之優良的效果。 【實施方式】 圖1，係爲實施形態1的處理裝置之剖面圖。圖2, 係爲展示處理室本體之構成的模式性立體圖，圖3，係爲 展示構成真空處理室之處理室構件之構成的模式圖，圖4 -8 - 201028489 置 裝 mil 理 處 熱 。 加 圖C 面置 上裝 性理 式處 模之 之中 內態 間形 空施 理實 處本 爲在 係 係 爲在1個的處理空間A中對2枚之基板S進行加熱處理者 。如圖1所示一般，加熱處理裝置10,係具備有：具備用 以對2枚之基板S作加熱處理之處理空間A的真空處理室 2〇、和在處理空間A內將各基板S作支持之支持構件30 、和將基板S同時作加熱之加熱手段40。另外，此加熱 • 處理裝置1〇，例如，係在藉由對基板S作加熱處理而進 行脫氣處理時而被使用。 真空處理室20，係藉由被形成有處理空間A之處理 室本體21、和將處理空間A之開口作堵塞之壁面構件22 以及蓋構件23所構成。 處理室本體21，係由具備有被形成爲可插入基板S 之貫通孔24的方塊狀（略直方體狀）之複數的處理室構 件25所構成。貫通孔24，係在處理室本體21之相對向的 • 一對之壁面上分別開口。此些之處理室構件25,係以將開 口有貫通孔24之壁面彼此作密接的狀態而被固定。而後 .，被形成於各處理室構件25處之貫通孔24，係分別被相 互通連，並藉由此些之複數的貫通孔24而區劃出處理空 間A » 在各處理構件25之各個處，複數（在本實施形態中 係爲5個）之貫通孔24，係沿著處理室構件25之高度方 向（圖中之上下方向）來以特定間隔而被設置有複數。亦 即是，處理室本體21 ’係具備有多段之處理空間a。 201028489 在圖2所示之例中，係藉由將被形成有貫通孔24之 處理室構件25於橫方向而各並排6個並分別作固定，而 被形成有5段之藉由6個的貫通孔24所構成的處理空間 A。而後，將如此這般地被形成有5段之處理空間a的各 處理室構件25，在縱方向上堆疊2個，藉由此，而形成具 備有10段之處理空間A的處理室本體21。亦即是，本實 施形態之處理室本體21，係由總計12個的處理室構件25 所成。另外，被作了堆叠的各處理室構件25彼此，係並 Q 不一定需要作固定，但是，爲了防止偏移，係以藉由螺桿 等來作固定爲理想。 另外，處理室構件25之製造方法，雖並未特別限定 ，但是，處理室構件25，例如係藉由對鋁或不鏽鋼等之金 屬塊作切削而被製造。 壁面構件22，係被固定在處理室本體21之處理空間 A所開口的其中一方之壁面21a處，而蓋構件23，係可開 閉地被固定在處理室本體21之處理空間A所開口的另外 〇 一方之壁面21b處。在本實施形態中，此些之壁面構件22 以及蓋構件23，係對應於各處理空間A而分別被設置。 進而，在此些之各壁面構件22以及蓋構件23與處理 室本體21 (處理室構件25)之間，還有在各處理室構件 25之間，係被設置有0型環等之密封構件26。具體而言 ，如圖3中所示一般，在各處理室構件25之貫通孔24所 開口之至少一方的壁面處，係被設置有涵蓋貫通孔24之 周圍而連續之溝部27，在此溝部27處，係被裝著有密封 -10 - 201028489 構件26。藉由此，壁面構件22以及蓋構件23與處理室本 體21 (處理室構件25)之間，還有各處理室構件25之間 ，係確實地被密封。 如上述一般而構成真空處理室20之處理室本體21、 壁面構件22以及蓋構件23，係以可將處理空間A作密封 的方式而分別被作固定。亦即是，區劃出處理空間A的各 構件，係並非藉由熔接而被固定，而是挾持密封構件26 φ 並經由螺絲等之鎖合構件而被固定，藉由此，處理空間A 係被構成爲可密封。藉由此，就算是使處理空間A內在大 氣狀態與真空狀態之間反覆作變化，亦能夠對於在區劃出 處理空間A之各構件間的漏洩之發生作抑制。 又，處理室構件25，係爲了在將處理空間A之內部 設爲了所期望之壓力（例如1 Pa )的情況時來對周圍之壁 部的變形作抑制，而有必要將各壁部之厚度設定爲特定之 厚度以上。另外’若是各處理空間A之壓力係爲略一定， Φ 則在各貫通孔24間之隔壁部28處，係幾乎不會產生有彎 折。故而，隔壁部28之厚度，係能夠設爲較最上部之貫 通孔24的頂壁以及最下部之貫通孔24的底壁之厚度爲更 薄。因此，在高度方向上，係成爲更加緊緻之構成。 以下’針對在藉由此種真空處理本體21所形成之處 理空間A內所設置之支持構件30及加熱手段40作詳細說 明。 加熱手段40 ’例如，係具備有作爲加熱源之鞘型加熱 器’並經由輻射熱而將基板加熱至例如120〜150。(：左右者 -11 - 201028489 。在本實施形態中’加熱手段4 0，係在處理空間A之基 板的搬送方向上被並排設置有6個。加熱手段40，係藉由 將其之端部載置在被設置於處理空間A之側壁處的加熱手 段支持構件42上，而在處理空間A內被作支持。 在加熱手段40之兩表面處，作爲表面處理，係被形 成有包含將輻射效率提昇之材料的被覆膜41。藉由此，由 於加熱手段40之輻射效率係被提升，因此，係能夠經由 加熱手段40之輻射熱而將基板S有效率地作加熱。被覆 膜41，例如，係經由在加熱手段40之表面上將材料作熔 射而被形成。作爲被覆膜41，係使用金屬材料，例如，係 適合使用鋁、鈦或是鉻，或者是包含有此些之合金或此些 之氧化物等。不用說，在被覆膜41中所使用之材料，只 要是能細提昇輻射效率者，則並不被特別限定。但是，從 真空加熱處理室的觀點來看，係以使用放出之氣體爲少的 材料爲理想。 另外，在由被形成有由上述之材料所成的被覆膜41 之鋁無垢板所成的試料處，設置熱電偶，並在相離開了 2 0mm之位置處，藉由輻射溫度計來對於加熱器之溫度作 測定，並與熱電偶之溫度作比較，而對於輻射效率作了調 查，其結果，熔射有氧化鈦的情況時之輻射效率，係爲 0.89，而當形成了氧化鉻膜的情況時之輻射效率，係爲 0.9。另外，由於以相同之方法而作了測定的鋁無垢板之 輻射效率係爲0.3，因此’可以得知’藉由進行了此些之 作爲表面處理的被覆膜41的形成，輻射效率係提昇。 -12- 201028489 又’在本實施形態中，雖係在加熱手段40之表面上 形成被覆膜41以提昇輻射效率，但是，例如，代替被覆 膜41，亦可將與加熱手段40成爲相異構件之被覆板，以 與加熱手段40之表面相接觸的狀態來作設置。作爲形成 被覆板之材料，係只要與被覆膜41相同的而在材料中使 用將輻射效率提昇之材料即可。就算是採用此種構成，亦 能夠提昇加熱手段40之輻射效率。 φ 支持構件30,係由沿著處理空間之長度方向而被設置 的複數之棒狀的基底構件31 (於圖4中，例如係爲8根） ，和於基底構件31上而以特定之間隔而被立設的複數之 基板支持銷32所成。在此基板支持銷32上，基板S係被 載置並被支持。 又，支持構件30，係分別被設置在各處理空間A之 加熱手段40的上部以及下部處，並在加熱手段40之上下 而分別支持基板。亦即是，第1支持構件30，其之基底構 件31係分別在加熱手段40之上面處，藉由未圖示之固定 構件而被固定。又，第2支持構件30，其之基底構件31 係分別在處理空間A之底面處，藉由未圖示之固定構件而 被固定。如此這般，在本實施形態中，在加熱手段40之 上下係分別被載置有基板S，存在於加熱手段40之上部 的基板S係從背面而被加熱，而存在於加熱手段40之下 部的基板S係從表面而被加熱。此加熱手段40之上面（ 上端）與被設置在加熱手段40之上部處的基板S之背面 間的距離，係被構成爲和加熱手段40之下面（下端）與 -13- 201028489 被設置在加熱手段40之下部處的基板S間的距離爲相等 。藉由採用此種構成，被插入至各處理空間A中之2枚的 基板，係能夠分別被加熱至相同之溫度。 於此，各基板S，例如，係經由機器臂而在處理空間 A內被作搬送。此時，基板S係經由機器臂而被從蓋構件 23側而插入至處理空間A內，並被載置在基板支持銷32 上。而後，機器臂係在此基板S與加熱手段40間之空隙 間移動，並從蓋構件23側而被拔出至外部。 @ 在本發明之加熱處理裝置10中，若是如此這般地經 由機器臂而將各基板S載置在各支持構件30之基板支持 銷32上，則能夠在該狀態下而經由加熱手段40之輻射熱 來對各基板S作加熱處理。例如，在作爲加熱手段而採用 有熱平板等之先前技術的加熱處理裝置中，係在將基板載 置於基板支持銷上後，爲了使基板與加熱手段相接觸，而 需要進而將基板作移動，但是，在本發明之加熱處理裝置 10中，係不需要進行此種基板之移動，而產率係提昇。 @ 又，爲了移動基板而使其與加熱手段相接觸，例如， 係有必要設置使基板支持銷成爲可升降的機構等，但是， 在本發明之加熱處理裝置中，由於係並不需要此種機構， 因此，亦能夠以較低價來製造加熱處理裝置。 如以上所述一般，在本實施形態中，係在各處理空間 A中插入2枚之基板S，而能夠對此些同時進行處理。進 而，由於係構成爲在1個的處理空間中插入2枚之基板S ，因此，能夠將處理室本體21更爲緊緻的形成。亦即是 -14- 201028489 ，在如同先前技術一般而於各處理空間中插入1枚之基板 的情況時，例如，爲了 一次對1 〇枚的基板進行處理，係 有必要將具備有5段之處理空間的處理室構件堆積2個， 而設爲具備有10段之處理空間的處理室本體。但是，在 本實施形態中，係能夠藉由具備有5段之處理空間A的處 理室構件25，來對10枚之基板S同時進行處理，因此， 只要具備有10段之處理空間，則能夠對20枚之基板S同 φ 時進行處理。 具體而言，列舉基板尺寸爲220x2 50(單位爲cm)的 情況爲例來作說明。在爲了對基板1〇枚作處理而具備有 10段之處理空間的先前技術之裝置中，處理室本體之大小 ，係爲橫X縱深（基板之搬送方向）X高度爲286x2 83x3 76 (單位爲cm )，處理空間之大小係爲橫X縱深X高度爲266 χ2 83χ16(單位爲cm)，而重量係爲49.65噸。相對於此 ，在能夠以5段之處理空間而對基板10枚作處理的本實 Ο 施形態中，處理室本體21之大小，係爲橫X縱深X高度爲 286x283x286 (單位爲cm)，處理空間之大小係爲橫X縱 深X高度爲266x283x32 (單位爲cm)，而重量係爲29.98 噸。如此這般，在本實施形態中，相較於先前技術之基板 處理裝置，係爲更加緊緻，並進而能夠對多數枚之基板同 時進行處理，因此，生產率係爲優良。 進而，能夠將對應於大型基板之處理室本體21，藉由 將小的塊狀之處理室構件25以密封構件26來作密封固定 而製作出1個的處理室本體21，並將此處理室本體21作 -15- 201028489 堆積，而能夠製作出具備有多段之處理空間A的處理室本 體21。如此這般，由於能夠將各處理室構件21輸送至處 理裝置之設置場所處，並在該處作組裝，因此，係不需要 大型且特殊之輸送手段。並且，由於係藉由密封構件26 而作密封，因此，就算是將從大氣狀態而降低至特定之壓 力的工程反覆地進行，亦難以產生漏洩，故而’特別是在 進行前處理工程或是後處理工程等時，係爲適合。 使用圖5，針對在本實施形態之處理空間A內所使用 _ 的支持構件之其他形態作說明。在上述之實施形態中，雖 係例示有在1根之基底構件31上而立設有基板支持銷32 之支持構件30，但是，在本實施形態中，支持構件30， 係如圖5(a)中所示一般，支持構件30，係藉由複數之 分割基底構件33、和將各分割基底構件33作連接的轉樞 部34、和在各分割基底構件33上空出特定之間隔而被立 設的基板支持銷32所構成。轉樞部34，係被構成爲能夠 以軸35爲中心而彎曲。又，相鄰接之轉樞部34，係如圖 _ 5 ( b )所示一般，以能夠分別在相反方向上作彎曲之方式 來作配置爲理想。藉由此，由於能夠將各轉樞部34之軸 3 5爲中心，而將支持構件3 0作折疊，因此，在處理上係 成爲容易。例如，當對裝置進行維修時，在將支持構件30 從處理空間A而卸下的情況時，由於係能夠一面將長的支 持構件30折疊並縮短而一面取出，因此，在處理上係成 爲容易。 以上，雖係針對本實施形態之處理裝置而作了說明， -16- 201028489 但是，本發明係並不被限定於本實施形態。例如，亦可採 用在處理空間內部更進而設置加熱手段40並成爲能夠對2 枚以上之基板作加熱。又，在本實施形態中，係將加熱手 段配合於處理室構件25來對於1個的處理空間A而設置 有6個，但是，亦可設置配合於處理空間A之大小的大型 之加熱手段，進而，亦可在加熱手段40處設置基板支持 銷32。 【圖式簡單說明】 [圖1]實施形態1的處理裝置之剖面圖。 [圖2]展示處理室本體之構成的模式立體圖。 [圖3]展示構成真空處理室之處理室本體之構成的模 式圖。 [圖4]展示處理空間內部之模式圖。 [圖5]展示另外的支持構件之模式圖。 【主要元件符號說明】 10 :加熱處理裝置 2〇 :真空處理室 2 1 :處理室本體 21 a :壁面 21b :壁面 22 :壁面構件 23 :蓋構件 -17- 201028489 24 :貫通孔 25 :處理室構件 26 :密封構件 27 :溝部 2 8 :隔壁部 3 0 :支持構件 3 1 :基底構件 32 :基板支持銷 . 3 3 :分割基底構件 34 :轉樞部 35 :軸 4 0 :加熱手段 41 :被覆膜 42 :加熱手段支持構件 A :處理空間 5 :基板 ❿ -18-201028489 VI. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a processing apparatus. [Prior Art] In recent years, the size of a liquid crystal display has been increased. As a processing substrate, for example, a glass substrate having a first generation (3000 mm x 3320 mm) and a size of φ is used. In the manufacture of the liquid crystal display device, a sputtering apparatus which performs a film forming process for a metal film for wiring, or a heat treatment apparatus which performs heat treatment is used. Such processing devices are provided with vacuum processing chambers that are useful for performing a particular process. With the increase in the size of the processing substrate, it is necessary to increase the size of the processing chamber itself to cover the entire processing substrate, and to carry out the film forming process and the like. In this case, if a large-sized vacuum processing chamber is cut out from one large aluminum block, the large-scale cutting processing device or the like is required to be used, and the manufacturing cost of the vacuum processing chamber itself is increased. In addition, in a large-scale vacuum processing room, it is a transportation means that requires a large trailer, etc., and it is inconvenient, and depending on the size or weight thereof, there is a case where it cannot be transported due to restrictions such as laws and regulations. . Therefore, it is known that there is a general vacuum processing chamber which has two or more processing chamber members having a substantially rectangular parallelepiped formed with through holes, and the adjacent processing chamber members are connected by through holes. The state is abutted by the sealing member (for example, refer to Patent Document 1). [Patent Document 1] [Patent Document 1] JP-A-2008-1973 74 (FIGS. 1, 3, and Application No. 1) [Disclosed] [The problem to be solved by the invention] @ Vacuum described above The processing chamber has the advantage that the processing chamber members can be transported to the installation site and joined at the installation site to form a vacuum processing chamber. However, with the increase in the size of the substrate in recent years, a heat treatment device using a more compact vacuum processing chamber is also required at the installation place. Accordingly, an object of the present invention is to provide a processing apparatus using a vacuum processing chamber which is convenient and compact in use in order to eliminate the problems of the prior art described above. [Means for Solving the Problem] The processing apparatus of the present invention is characterized in that the vacuum processing chamber includes a processing chamber main body including a through hole formed to allow insertion of the substrate. a plurality of block-shaped processing chamber members are formed, and at least one of the adjacent processing chamber members covers the periphery of the opening of the through-hole with the abutting surface of the other one, and the groove is continuously provided And each of the processing chamber members is fixed in a state in which they are closely adhered to each other via a sealing structure -6 - 201028489 attached to the groove, and a processing space including a plurality of through holes is provided. And the wall member is configured to seal the opening of one of the processing spaces and the cover member, and to open and close the opening of the other processing space, and to provide heating means in each processing space. The substrate is heated by radiant heat; and a pair of substrate supporting members are respectively disposed above the heating means, and each substrate is targeted to the aforementioned heating hand The way to make support. In the present invention, in a single processing space, a pair of substrate supporting members are provided above and below the heating means, and the substrate supporting members support the substrates. That is, in the present invention, it is configured to be able to process a plurality of substrates in one processing space. By adopting such a configuration, even in the case of a device for processing the same number, the processing apparatus of the present invention becomes more compact and has less material to be produced than the processing apparatus of the prior art. Further, since the processing apparatus is composed of a plurality of processing members, it is easy to transport. Preferably, the heating means and the distance between the substrates supported by the substrate supporting members are equal. With such a configuration, each of the substrates in one processing space is heated to the same temperature. In a preferred embodiment of the present invention, the heating means is provided with a sheath heater as a heating source. Further, it is preferable that the general configuration is such that, on the surface of the heating means, a coating film containing a material for improving the radiation efficiency is formed to enhance the radiation efficiency, or is provided by lifting A coated board formed by materials with a radiation efficiency of 201028489. Preferably, the pair of substrate supporting members are respectively formed of a rod-shaped base member and a plurality of substrate supporting pins that are erected on the base member, and one of the substrate supporting members is fixed to the foregoing The upper surface of the heating means and the other substrate supporting member are provided on the bottom surface of the processing space. According to this configuration, the heating of the substrate in the plurality of processing spaces is not suppressed, and the substrate can be easily held. In this case, it is preferable that the base member is provided with a bendable pivot portion at a plurality of places in the longitudinal direction thereof. With such a configuration, it is possible to bend a large supporting member corresponding to a large substrate, and for example, by bending the supporting member during maintenance, it can be easily taken out from the processing space. It is easy to handle. [Effects of the Invention] The processing device of the present invention is convenient in transportation, and is configured to be capable of processing a plurality of substrates in one processing space. The entire device can be more compactly constructed to have an excellent effect. [Embodiment] Fig. 1 is a cross-sectional view showing a processing apparatus according to a first embodiment. Fig. 2 is a schematic perspective view showing the constitution of the processing chamber body, and Fig. 3 is a schematic view showing the constitution of the processing chamber members constituting the vacuum processing chamber, and Fig. 4-8 - 201028489 is installed at the mil heat. In the case of the top surface of the top-loading method, the inner-mode inter-spaced empty-handling is used to heat the two substrates S in one processing space A. As shown in FIG. 1, the heat treatment apparatus 10 is generally provided with a vacuum processing chamber 2A having a processing space A for heat-treating two substrates S, and a substrate S in the processing space A. The supporting member 30 and the heating means 40 for heating the substrate S at the same time. Further, the heating/processing apparatus 1 is used, for example, when the substrate S is subjected to a heat treatment for degassing. The vacuum processing chamber 20 is constituted by a processing chamber main body 21 in which the processing space A is formed, and a wall member 22 and a lid member 23 which block the opening of the processing space A. The processing chamber main body 21 is composed of a plurality of processing chamber members 25 having a square shape (slightly rectangular parallelepiped shape) formed as a through hole 24 into which the substrate S can be inserted. The through holes 24 are respectively opened on the opposite wall surfaces of the processing chamber main body 21. The processing chamber members 25 are fixed in a state in which the wall surfaces of the openings having the through holes 24 are in close contact with each other. Then, the through holes 24 formed in the respective process chamber members 25 are respectively connected to each other, and the processing space A is partitioned by the plurality of through holes 24 of the plurality of processing members 25 The plurality of through holes 24 (in the present embodiment, five) are provided at a predetermined interval along the height direction of the processing chamber member 25 (the upper and lower directions in the drawing). That is, the processing chamber body 21' is provided with a plurality of processing spaces a. In the example shown in FIG. 2, the processing chamber members 25 in which the through holes 24 are formed are arranged side by side in the horizontal direction, and are respectively fixed by six, and six of the five sections are formed. The processing space A formed by the through holes 24 . Then, each of the processing chamber members 25 in which the processing space a of five stages is formed in this manner is stacked in the vertical direction, whereby the processing chamber body 21 having the processing space A of ten stages is formed. . That is, the processing chamber main body 21 of the present embodiment is formed by a total of twelve processing chamber members 25. Further, it is not necessary to fix the processing chamber members 25 which are stacked, and it is not necessary to fix them. However, in order to prevent the offset, it is preferable to fix them by a screw or the like. Further, the method of manufacturing the processing chamber member 25 is not particularly limited, but the processing chamber member 25 is manufactured, for example, by cutting a metal block such as aluminum or stainless steel. The wall member 22 is fixed to one of the wall faces 21a of the processing space A of the processing chamber body 21, and the cover member 23 is openably and closably fixed to the processing space A of the processing chamber body 21. 〇 One side of the wall 21b. In the present embodiment, the wall member 22 and the cover member 23 are provided corresponding to the respective processing spaces A. Further, between each of the wall member 22 and the cover member 23 and the processing chamber main body 21 (the processing chamber member 25), a sealing member such as a 0-ring or the like is provided between the respective processing chamber members 25. 26. Specifically, as shown in FIG. 3, at least one wall surface of the opening of the through hole 24 of each of the processing chamber members 25 is provided with a continuous groove portion 27 covering the periphery of the through hole 24, and the groove portion is formed therein. At 27, the unit was fitted with a seal -10 - 201028489 member 26. Thereby, the wall member 22 and the lid member 23 and the processing chamber body 21 (processing chamber member 25) and the processing chamber members 25 are reliably sealed. The processing chamber main body 21, the wall member 22, and the lid member 23, which constitute the vacuum processing chamber 20 as described above, are fixed so that the processing space A can be sealed. In other words, the members that define the processing space A are not fixed by welding, but are held by the sealing member 26 φ and fixed by a locking member such as a screw, whereby the processing space A is It is constructed to be sealable. Thereby, even if the inside of the processing space A is repeatedly changed between the atmospheric state and the vacuum state, it is possible to suppress the occurrence of leakage between the members arranging the processing space A. Further, the treatment chamber member 25 is for suppressing deformation of the surrounding wall portion when the inside of the treatment space A is set to a desired pressure (for example, 1 Pa), and it is necessary to increase the thickness of each wall portion. Set to a specific thickness or more. Further, if the pressure in each of the processing spaces A is slightly constant, Φ is almost not bent at the partition portion 28 between the through holes 24. Therefore, the thickness of the partition portion 28 can be made thinner than the thickness of the top wall of the uppermost through hole 24 and the bottom wall of the lowermost through hole 24. Therefore, in the height direction, the system becomes a more compact structure. Hereinafter, the support member 30 and the heating means 40 provided in the space A formed by the vacuum processing body 21 will be described in detail. The heating means 40' is, for example, provided with a sheath type heater as a heating source and heats the substrate to, for example, 120 to 150 via radiant heat. (: left and right -11 - 201028489. In the present embodiment, the heating means 40 is provided in parallel in the transport direction of the substrate in the processing space A. The heating means 40 is formed by the end portion thereof. It is placed on the heating means supporting member 42 provided at the side wall of the processing space A, and is supported in the processing space A. At both surfaces of the heating means 40, as surface treatment, it is formed to contain radiation. The coating film 41 of the material having improved efficiency is thereby improved in radiation efficiency of the heating means 40, so that the substrate S can be efficiently heated by the radiant heat of the heating means 40. The coating film 41, For example, it is formed by spraying a material on the surface of the heating means 40. As the coating film 41, a metal material is used, for example, aluminum, titanium or chromium is suitably used, or some of them are included. An alloy or such an oxide, etc. Needless to say, the material used in the coating film 41 is not particularly limited as long as it can finely increase the radiation efficiency. However, from the viewpoint of the vacuum heat treatment chamber It is preferable to use a material having a small amount of released gas. Further, a thermocouple is provided in a sample formed of an aluminum scale-free plate on which the coating film 41 made of the above-mentioned material is formed, and is separated from the phase. At a position of 20 mm, the temperature of the heater was measured by a radiation thermometer, and compared with the temperature of the thermocouple, and the radiation efficiency was investigated, and as a result, the radiation efficiency in the case of spraying titanium oxide The system is 0.89, and the radiation efficiency when the chromium oxide film is formed is 0.9. In addition, since the radiation efficiency of the aluminum scale-free plate measured by the same method is 0.3, it is known By the formation of the coating film 41 which is the surface treatment, the radiation efficiency is improved. -12- 201028489 In the present embodiment, the coating film 41 is formed on the surface of the heating means 40. In order to improve the radiation efficiency, for example, instead of the coating film 41, the covering sheet which is a member different from the heating means 40 may be provided in a state of being in contact with the surface of the heating means 40. The material of the superstrate is a material which is improved in radiation efficiency in the material as long as it is the same as the coating film 41. Even with such a configuration, the radiation efficiency of the heating means 40 can be improved. A plurality of rod-shaped base members 31 (eight in FIG. 4, for example, in FIG. 4) provided along the longitudinal direction of the processing space, and are erected at a specific interval on the base member 31. A plurality of substrate support pins 32 are formed. The substrate S is placed and supported on the substrate support pins 32. Further, the support members 30 are respectively provided at the upper and lower portions of the heating means 40 of the respective processing spaces A. The substrate is supported by the heating means 40, that is, the first supporting member 30, wherein the base member 31 is fixed on the upper surface of the heating means 40 by a fixing member (not shown). . Further, in the second support member 30, the base member 31 is fixed to the bottom surface of the processing space A by a fixing member (not shown). In this manner, in the present embodiment, the substrate S is placed on the upper side of the heating means 40, and the substrate S existing on the upper portion of the heating means 40 is heated from the back surface and exists in the lower portion of the heating means 40. The substrate S is heated from the surface. The distance between the upper surface (upper end) of the heating means 40 and the back surface of the substrate S disposed at the upper portion of the heating means 40 is configured such that the lower surface (lower end) of the heating means 40 and -13 - 201028489 are disposed in the heating The distance between the substrates S at the lower portion of the means 40 is equal. With such a configuration, the two substrates inserted into each of the processing spaces A can be heated to the same temperature. Here, each of the substrates S is transported in the processing space A via a robot arm, for example. At this time, the substrate S is inserted into the processing space A from the side of the cover member 23 via the robot arm, and is placed on the substrate supporting pin 32. Then, the robot arm moves between the gap between the substrate S and the heating means 40, and is pulled out from the side of the cover member 23 to the outside. In the heat treatment apparatus 10 of the present invention, if the substrates S are placed on the substrate supporting pins 32 of the respective supporting members 30 via the robot arm, the heating means 40 can be used in this state. The substrate S is subjected to heat treatment by radiant heat. For example, in a prior art heat treatment apparatus using a hot plate or the like as a heating means, after the substrate is placed on the substrate supporting pin, the substrate needs to be moved in order to bring the substrate into contact with the heating means. However, in the heat treatment apparatus 10 of the present invention, the movement of such a substrate is not required, and the yield is improved. @ Further, in order to move the substrate and bring it into contact with the heating means, for example, it is necessary to provide a mechanism for raising and lowering the substrate supporting pin. However, in the heat treatment device of the present invention, this is not required. Therefore, it is also possible to manufacture the heat treatment apparatus at a lower price. As described above, in the present embodiment, two substrates S are inserted into each processing space A, and these can be simultaneously processed. Further, since the two substrates S are inserted into one processing space, the processing chamber main body 21 can be formed more tightly. In other words, in the case of inserting one substrate into each processing space as in the prior art, for example, in order to process one substrate at a time, it is necessary to have five segments. Two processing chamber members of the processing space are stacked, and a processing chamber body having a processing space of ten stages is provided. However, in the present embodiment, it is possible to simultaneously process ten substrates S by the processing chamber member 25 having the processing space A of five stages. Therefore, if there is a processing space of ten stages, it is possible to When 20 substrates S are the same as φ, they are processed. Specifically, a case where the substrate size is 220 x 2 50 (unit: cm) will be described as an example. In the prior art device which has a processing space of 10 stages for processing the substrate 1 , the size of the processing chamber body is the horizontal X depth (transport direction of the substrate) X height is 286 x 2 83 x 3 76 (in units Cm), the processing space is the horizontal X depth X height is 266 χ 2 83 χ 16 (in cm), and the weight is 49.65 tons. On the other hand, in the embodiment in which the substrate 10 can be processed in a processing space of five stages, the size of the processing chamber main body 21 is a horizontal X depth X height of 286 x 283 x 286 (unit: cm), and is processed. The size of the space is horizontal X depth X height 266x283x32 (in cm), and the weight is 29.98 tons. As described above, in the present embodiment, the substrate processing apparatus of the prior art is more compact, and further, it is possible to simultaneously process a plurality of substrates, and therefore, the productivity is excellent. Further, the processing chamber main body 21 corresponding to the large substrate can be sealed and fixed by the sealing member 26 by the small block-shaped processing chamber member 25, and the processing chamber main body 21 can be produced. The main body 21 is stacked as -15-201028489, and the processing chamber body 21 having a plurality of processing spaces A can be produced. In this manner, since the processing chamber members 21 can be transported to the installation place of the processing apparatus and assembled there, a large and special conveying means is not required. Further, since the sealing member 26 is used for sealing, even if the engineering is lowered from the atmospheric state to the specific pressure, it is difficult to cause leakage, so that the pretreatment process or the rear is particularly performed. It is suitable when dealing with projects, etc. Another aspect of the support member used in the processing space A of the present embodiment will be described with reference to Fig. 5 . In the above-described embodiment, the support member 30 in which the substrate supporting pins 32 are vertically provided on one of the base members 31 is exemplified. However, in the present embodiment, the supporting members 30 are as shown in Fig. 5(a). Generally, the support member 30 is erected by a plurality of divided base members 33, a pivot portion 34 for connecting the divided base members 33, and a space spaced apart from each of the divided base members 33. The substrate support pin 32 is constructed. The pivot portion 34 is configured to be bendable about the shaft 35. Further, it is preferable that the adjacent pivot portions 34 are generally arranged so as to be bendable in opposite directions as shown in Fig. 5(b). Thereby, since the support member 30 can be folded by centering the shaft 35 of each of the pivot portions 34, it is easy to handle. For example, when the device is repaired, when the support member 30 is detached from the processing space A, since the long support member 30 can be folded and shortened while being taken out, it is easy to handle. . The above description has been made with respect to the processing apparatus of the present embodiment, and -16-201028489 However, the present invention is not limited to the embodiment. For example, the heating means 40 may be further provided inside the processing space to enable heating of two or more substrates. Further, in the present embodiment, six heating means are provided for one processing space A, but a large heating means that fits the size of the processing space A may be provided. Further, the substrate supporting pin 32 may be provided at the heating means 40. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A cross-sectional view of a processing apparatus according to a first embodiment. Fig. 2 is a schematic perspective view showing the configuration of a processing chamber body. Fig. 3 is a schematic view showing the configuration of a processing chamber body constituting a vacuum processing chamber. [Fig. 4] A schematic diagram showing the inside of a processing space. [Fig. 5] A schematic diagram showing additional support members. [Main component symbol description] 10: Heat treatment device 2: Vacuum processing chamber 2 1 : Processing chamber body 21 a : Wall surface 21 b : Wall surface 22 : Wall surface member 23 : Cover member -17 - 201028489 24 : Through hole 25 : Process chamber Member 26: sealing member 27: groove portion 28: partition wall portion 30: support member 3 1 : base member 32: substrate support pin. 3 3: divided base member 34: pivot portion 35: shaft 40: heating means 41: Coating film 42: heating means supporting member A: processing space 5: substrate ❿ -18-