JP2009158416A5 - - Google Patents
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- JP2009158416A5 JP2009158416A5 JP2007338285A JP2007338285A JP2009158416A5 JP 2009158416 A5 JP2009158416 A5 JP 2009158416A5 JP 2007338285 A JP2007338285 A JP 2007338285A JP 2007338285 A JP2007338285 A JP 2007338285A JP 2009158416 A5 JP2009158416 A5 JP 2009158416A5
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- active material
- material layer
- layer made
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010409 thin film Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 6
- -1 nitrogen-substituted lithium phosphate Chemical class 0.000 claims description 4
- 239000007774 positive electrode material Substances 0.000 claims description 4
- 239000007784 solid electrolyte Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910012851 LiCoO 2 Inorganic materials 0.000 claims description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910001416 lithium ion Inorganic materials 0.000 claims description 3
- 239000007773 negative electrode material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000006183 anode active material Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007338285A JP2009158416A (ja) | 2007-12-27 | 2007-12-27 | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン2次電池の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007338285A JP2009158416A (ja) | 2007-12-27 | 2007-12-27 | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン2次電池の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009158416A JP2009158416A (ja) | 2009-07-16 |
| JP2009158416A5 true JP2009158416A5 (enExample) | 2011-01-27 |
Family
ID=40962180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007338285A Pending JP2009158416A (ja) | 2007-12-27 | 2007-12-27 | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン2次電池の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009158416A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011021264A (ja) * | 2009-07-17 | 2011-02-03 | Ulvac Japan Ltd | 成膜装置 |
| JP2011108603A (ja) * | 2009-11-20 | 2011-06-02 | Ulvac Japan Ltd | 薄膜リチウム二次電池及び薄膜リチウム二次電池の形成方法 |
| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| JP5794869B2 (ja) * | 2011-09-12 | 2015-10-14 | 株式会社アルバック | 固体電解質膜形成用のマスク、リチウム二次電池の製造方法 |
| JP2012153983A (ja) * | 2012-05-07 | 2012-08-16 | Ulvac Japan Ltd | 固体電解質薄膜の製造方法、及び薄膜固体リチウムイオン2次電池の製造方法 |
| JP2014148703A (ja) * | 2013-01-31 | 2014-08-21 | Ulvac Japan Ltd | スパッタリング装置 |
| TW201529873A (zh) * | 2014-01-24 | 2015-08-01 | Applied Materials Inc | 電化學元件中之電極層上的固態電解質之沉積 |
| WO2016146732A1 (en) * | 2015-03-18 | 2016-09-22 | Umicore | Lithium-containing transition metal oxide target |
| JP7257807B2 (ja) * | 2019-02-12 | 2023-04-14 | 東京エレクトロン株式会社 | スパッタ装置 |
| CN114057480B (zh) * | 2021-11-17 | 2023-03-14 | 鄂尔多斯市紫荆创新研究院 | 用于制备薄膜锂电池的磷酸锂固态电解质靶材及制备方法 |
| CN117352856B (zh) * | 2023-11-14 | 2024-08-27 | 深圳汇能储能材料工程研究中心有限公司 | 一种锂二次电池及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3321403B2 (ja) * | 1997-12-08 | 2002-09-03 | 株式会社東芝 | 成膜装置及び成膜方法 |
| JP4450472B2 (ja) * | 2000-03-08 | 2010-04-14 | 株式会社アルバック | スパッタリング装置 |
| JP2004165097A (ja) * | 2002-11-15 | 2004-06-10 | Sony Corp | 負極および電池、並びにそれらのその製造方法 |
| JP2005235686A (ja) * | 2004-02-23 | 2005-09-02 | Sony Corp | 正極および電池、並びにそれらの製造方法 |
| JP5274753B2 (ja) * | 2006-06-08 | 2013-08-28 | 株式会社アルバック | 含Pb結晶薄膜の形成方法 |
-
2007
- 2007-12-27 JP JP2007338285A patent/JP2009158416A/ja active Pending
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