JP2009147056A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2009147056A
JP2009147056A JP2007321779A JP2007321779A JP2009147056A JP 2009147056 A JP2009147056 A JP 2009147056A JP 2007321779 A JP2007321779 A JP 2007321779A JP 2007321779 A JP2007321779 A JP 2007321779A JP 2009147056 A JP2009147056 A JP 2009147056A
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Japan
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mos transistor
layer
pixel
semiconductor layer
photodiode
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Japanese (ja)
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JP2009147056A5 (enExample
Inventor
Yoji Kitano
洋司 北野
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2007321779A priority Critical patent/JP2009147056A/ja
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Publication of JP2009147056A5 publication Critical patent/JP2009147056A5/ja
Withdrawn legal-status Critical Current

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JP2007321779A 2007-12-13 2007-12-13 半導体装置及びその製造方法 Withdrawn JP2009147056A (ja)

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JP2007321779A JP2009147056A (ja) 2007-12-13 2007-12-13 半導体装置及びその製造方法

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JP2007321779A JP2009147056A (ja) 2007-12-13 2007-12-13 半導体装置及びその製造方法

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JP2009147056A true JP2009147056A (ja) 2009-07-02
JP2009147056A5 JP2009147056A5 (enExample) 2010-07-08

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211171A (ja) * 2010-02-12 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体装置及び、その駆動方法
JP2015023192A (ja) * 2013-07-19 2015-02-02 日本放送協会 固体撮像素子
US9106858B2 (en) 2012-10-02 2015-08-11 Samsung Electronics Co., Ltd. Image sensor, method of operating the same, and image processing system including the same
WO2015129810A1 (ja) * 2014-02-27 2015-09-03 株式会社 東芝 Ｃｍｏｓイメージセンサ
US9894301B2 (en) 2012-10-12 2018-02-13 Samsung Electronics Co., Ltd. CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same
US10741606B2 (en) 2017-04-28 2020-08-11 Tianma Microelectronics Co., Ltd. Image sensor and sensor device
KR20210124447A (ko) * 2019-11-13 2021-10-14 페킹 유니버시티 Utbb 광전 검출기 픽셀 유닛, 어레이 및 방법

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211171A (ja) * 2010-02-12 2011-10-20 Semiconductor Energy Lab Co Ltd 半導体装置及び、その駆動方法
US9524993B2 (en) 2010-02-12 2016-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a transistor with an oxide semiconductor layer between a first gate electrode and a second gate electrode
US9106858B2 (en) 2012-10-02 2015-08-11 Samsung Electronics Co., Ltd. Image sensor, method of operating the same, and image processing system including the same
US9800814B2 (en) 2012-10-02 2017-10-24 Samsung Electronics Co., Ltd. Image sensor, method of operating the same, and image processing system including the same
US9894301B2 (en) 2012-10-12 2018-02-13 Samsung Electronics Co., Ltd. CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same
JP2015023192A (ja) * 2013-07-19 2015-02-02 日本放送協会 固体撮像素子
WO2015129810A1 (ja) * 2014-02-27 2015-09-03 株式会社 東芝 Ｃｍｏｓイメージセンサ
US10096641B2 (en) 2014-02-27 2018-10-09 Kabushiki Kaisha Toshiba CMOS image sensor
US10741606B2 (en) 2017-04-28 2020-08-11 Tianma Microelectronics Co., Ltd. Image sensor and sensor device
KR20210124447A (ko) * 2019-11-13 2021-10-14 페킹 유니버시티 Utbb 광전 검출기 픽셀 유닛, 어레이 및 방법
JP2022529184A (ja) * 2019-11-13 2022-06-17 北京大学 Ｕｔｂｂ光検出器ピクセルユニット、アレイ及び方法
KR102617788B1 (ko) * 2019-11-13 2023-12-22 페킹 유니버시티 Utbb 광전 검출기 픽셀 유닛, 어레이 및 방법
JP7597381B2 (ja) 2019-11-13 2024-12-10 北京大学 Ｕｔｂｂ光検出器ピクセルユニット、アレイ及び方法
US12230653B2 (en) 2019-11-13 2025-02-18 Peking University UTTB photodetector pixel unit, array and method

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