JP2009130298A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2009130298A
JP2009130298A JP2007306593A JP2007306593A JP2009130298A JP 2009130298 A JP2009130298 A JP 2009130298A JP 2007306593 A JP2007306593 A JP 2007306593A JP 2007306593 A JP2007306593 A JP 2007306593A JP 2009130298 A JP2009130298 A JP 2009130298A
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light
led chip
emitting device
color conversion
mounting substrate
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JP5180564B2 (en
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Takanori Akeda
孝典 明田
Kazunari Kuzuhara
一功 葛原
Koji Nishioka
浩二 西岡
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device capable of decreasing the amount of a light diffusing material and suppressing local heat generation of a color converting member. <P>SOLUTION: The light emitting device includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, and the dome-shaped color converting member 70 which is formed by dispersing fluorescent particles excited with light emitted by the LED chip 10 to emit visible light with a longer wavelength than that of the LED chip in a base material made of a transparent material (silicone resin etc.) and disposed enclosing the LED chip 10 between the mounting substrate 20. The color converting member 70 is configured such that the light diffusing material 73 differing in refractive index from the base material is dispersed only in a predetermined area whose relative incident light intensity based upon orientation characteristics of the LED chip 10 exceeds a specified value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、青色光あるいは紫外光を放射するGaN系のLEDチップとLEDチップから放射された光によって励起されてLEDチップとは異なる発光色の光を放射する波長変換材料としての蛍光体や光吸収体とを組み合わせることにより、白色を含め、LEDチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われ(例えば、特許文献1参照)、発光装置の光出力の増大に伴い照明用途への応用が進んでいる。   Conventionally, a GaN LED chip that emits blue light or ultraviolet light, and a phosphor or light absorption as a wavelength conversion material that emits light of an emission color different from that of the LED chip when excited by light emitted from the LED chip. Research and development of light emitting devices that emit light of a color different from the emission color of the LED chip, including white, by combining with the body is performed in various places (for example, see Patent Document 1), and the light output of the light emitting device is increased. Along with this, application to lighting applications is progressing.

ここにおいて、上記特許文献1には、図9に示すように、LEDチップ10’と、LEDチップ10’が一表面側に実装された実装基板20’と、LEDチップ10’から放射される光によって励起されてLEDチップ10’よりも長波長の可視光を放射する蛍光体粒子および透光性材料により形成され実装基板20’との間にLEDチップ10’を囲む形で配設されたドーム状の色変換部材70’とを備え、色変換部材70’中に光拡散材を分散させてなる発光装置1’が提案されている。なお、図9に示した構成の発光装置1’では、LEDチップ10’としてGaN系の青色LEDチップを用い、色変換部材70’の蛍光体として黄色蛍光体を用いており、白色光を得ることができる。
特開2007−250817号公報
Here, in Patent Document 1, as shown in FIG. 9, the LED chip 10 ′, the mounting substrate 20 ′ on which the LED chip 10 ′ is mounted on one surface side, and the light emitted from the LED chip 10 ′. The dome is formed by phosphor particles that emit visible light having a wavelength longer than that of the LED chip 10 ′ and a light-transmitting material, and is disposed between the mounting substrate 20 ′ and the LED chip 10 ′. And a light-emitting device 1 ′ in which a light diffusing material is dispersed in the color conversion member 70 ′. In the light emitting device 1 ′ having the configuration shown in FIG. 9, a GaN blue LED chip is used as the LED chip 10 ′, and a yellow phosphor is used as the phosphor of the color conversion member 70 ′, thereby obtaining white light. be able to.
JP 2007-250817 A

ところで、上述の発光装置1’では、色むらを少なくすることができるが、色変換部材70’の全体に亘って光拡散材を分散させてあるので、光拡散材の量が比較的多くなってコストが高くなり、また、ストークスシフトによるエネルギ損失に起因して発熱する蛍光体粒子の分布がLEDチップ10’の配光分布に起因して局所的に集中しやすくなり、色変換部材70’の温度が局所的に上昇し、蛍光体粒子の光変換効率の低下や色変換部材70’の信頼性低下の原因になりやすかった。   By the way, in the above-described light emitting device 1 ′, the color unevenness can be reduced, but since the light diffusing material is dispersed throughout the color conversion member 70 ′, the amount of the light diffusing material is relatively large. In addition, the cost increases, and the distribution of the phosphor particles that generate heat due to the energy loss due to the Stokes shift is likely to be locally concentrated due to the light distribution of the LED chip 10 ′, and the color conversion member 70 ′. The temperature rises locally, which tends to cause a decrease in the light conversion efficiency of the phosphor particles and a decrease in the reliability of the color conversion member 70 ′.

本発明は上記事由に鑑みて為されたものであり、その目的は、光拡散材の量を低減でき且つ色変換部材の局所的な発熱を抑制することが可能な発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of reducing the amount of the light diffusing material and suppressing local heat generation of the color conversion member. is there.

請求項1の発明は、LEDチップと、当該LEDチップが実装された実装基板と、LEDチップから放射される光によって励起されてLEDチップよりも長波長の可視光を放射する蛍光体粒子が透光性材料からなる母材に分散されてなり実装基板との間にLEDチップを囲む形で配設されたドーム状の色変換部材とを備え、色変換部材は、前記母材とは屈折率の異なる光拡散材をLEDチップの配向特性に基づく相対入射光強度が規定値を超える規定領域のみに分散させてなることを特徴とする。   According to the first aspect of the present invention, an LED chip, a mounting substrate on which the LED chip is mounted, and phosphor particles that are excited by light emitted from the LED chip and emit visible light having a longer wavelength than the LED chip are transmitted. A dome-shaped color conversion member that is dispersed in a base material made of a light-sensitive material and is disposed so as to surround the LED chip between the mounting substrate and the color conversion member. The different light diffusing materials are dispersed only in a prescribed region where the relative incident light intensity based on the orientation characteristics of the LED chip exceeds a prescribed value.

この発明によれば、色変換部材は、前記母材とは屈折率の異なる光拡散材をLEDチップの配向特性に基づく相対入射光強度が規定値を超える規定領域のみに分散させてあるので、色変換部材の全体に亘って光拡散材を分散させる場合に比べて、光拡散材の量を低減でき、しかも、色変換部材において相対入射光強度が規定値を超える規定領域では光拡散材によりLEDチップからの光を拡散させることができ、ストークスシフトによるエネルギ損失に起因して発熱する蛍光体粒子が局所的に集中するのを防止することができるから、光拡散材の量を低減でき且つ色変換部材の局所的な発熱を抑制することが可能になる。   According to this invention, since the color conversion member has the light diffusion material having a refractive index different from that of the base material dispersed in only the specified region where the relative incident light intensity based on the orientation characteristics of the LED chip exceeds the specified value, Compared with the case where the light diffusing material is dispersed over the entire color conversion member, the amount of the light diffusing material can be reduced, and in the specified region where the relative incident light intensity exceeds the specified value in the color converting member, Light from the LED chip can be diffused, and the phosphor particles that generate heat due to energy loss due to Stokes shift can be prevented from being concentrated locally, so that the amount of light diffusing material can be reduced and It becomes possible to suppress local heat generation of the color conversion member.

請求項2の発明は、請求項1の発明に比べて、前記母材は、ガラスであることを特徴とする。   The invention of claim 2 is characterized in that the base material is glass as compared with the invention of claim 1.

この発明によれば、前記母材がシリコーン樹脂などの有機材料である場合に比べて、前記色変換部材の温度上昇を抑制することができる。   According to this invention, the temperature increase of the color conversion member can be suppressed as compared with the case where the base material is an organic material such as a silicone resin.

請求項3の発明は、請求項1または請求項2の発明において、前記光拡散材は、ガラス繊維からなることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the light diffusing material is made of glass fiber.

この発明によれば、前記光拡散材が球状である場合に比べて、前記色変換部材の前記蛍光体粒子で発生した熱を効率的に放熱させることが可能となり、前記色変換部材の局所的な発熱をより抑制することが可能となる。   According to this invention, compared with the case where the light diffusing material is spherical, it is possible to efficiently dissipate heat generated in the phosphor particles of the color conversion member, and the color conversion member can be locally dissipated. It is possible to further suppress excessive heat generation.

請求項4の発明は、請求項1または請求項2の発明において、前記光拡散材は、金属ナノ粒子からなることを特徴とする。   According to a fourth aspect of the present invention, in the first or second aspect of the present invention, the light diffusing material comprises metal nanoparticles.

この発明によれば、前記LEDチップからの光によって前記光拡散材において表面プラズモンポラリトンが励起され、前記LEDチップからの光が増強されるので、外部への光取り出し効率を高めることが可能となる。   According to the present invention, the surface plasmon polariton is excited in the light diffusing material by the light from the LED chip and the light from the LED chip is enhanced, so that it is possible to increase the light extraction efficiency to the outside. .

請求項5の発明は、請求項1ないし請求項4の発明において、前記実装基板は、熱伝導性材料により形成されてなることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the mounting substrate is formed of a heat conductive material.

この発明によれば、前記色変換部材で発生した熱を前記実装基板を通して効率良く放熱させることが可能となり、前記色変換部材の局所的な発熱をより抑制することが可能となる。   According to this invention, it is possible to efficiently dissipate the heat generated in the color conversion member through the mounting substrate, and it is possible to further suppress local heat generation of the color conversion member.

請求項6の発明は、請求項1ないし請求項5の発明において、前記色変換部材よりも内側で前記実装基板との間に前記LEDチップを囲む形で配設されたドーム状の光学部材と、光学部材の内側で前記LEDチップを封止した封止部とを備え、前記色変換部材と光学部材との間に空気層が形成されてなることを特徴とする。   According to a sixth aspect of the present invention, in any of the first to fifth aspects of the present invention, a dome-shaped optical member disposed so as to surround the LED chip between the mounting substrate and the color conversion member. A sealing portion in which the LED chip is sealed inside the optical member, and an air layer is formed between the color conversion member and the optical member.

この発明によれば、前記LEDチップから放射され前記色変換部材中の前記蛍光体粒子により散乱された光のうち光学部材側へ散乱されて光学部材を透過する光の光量を低減できて装置全体としての外部への光取り出し効率の向上による光出力の向上を図れる。   According to this invention, among the light emitted from the LED chip and scattered by the phosphor particles in the color conversion member, the amount of light scattered to the optical member side and transmitted through the optical member can be reduced, and the entire apparatus The light output can be improved by improving the light extraction efficiency to the outside.

請求項1の発明では、光拡散材の量を低減でき且つ色変換部材の局所的な発熱を抑制することが可能になるという効果がある。   According to the first aspect of the present invention, the amount of the light diffusing material can be reduced and local heat generation of the color conversion member can be suppressed.

(実施形態1)
以下、本実施形態の発光装置について図1〜図6を参照しながら説明する。
(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、一表面側にLEDチップ10への給電用の導体パターン23,23を有しLEDチップ10が上記一表面側に実装された矩形板状の実装基板20と、LEDチップ10から放射された光の配光を制御する光学部材であって実装基板20との間にLEDチップ10を収納する形で実装基板20の上記一表面側に固着された透光性材料からなるドーム状の光学部材60と、光学部材60と実装基板20とで囲まれた空間に充実されLEDチップ10および当該LEDチップ10に電気的に接続された複数本(本実施形態では、2本)のボンディングワイヤ14を封止した透光性の封止樹脂からなる封止部50と、LEDチップ10から放射され封止部50および光学部材60を透過した光によって励起されてLEDチップ10よりも長波長の可視光を放射する蛍光体粒子が透光性材料からなる母材に分散されてなり実装基板20の上記一表面側において実装基板20との間にLEDチップ10などを囲む形で配設されるドーム状の色変換部材70とを備えている。ここにおいて、色変換部材70は、実装基板20の上記一表面側において光学部材60の光出射面60bとの間に空気層80が形成されるように配設されている。また、実装基板20は、上記一表面において光学部材60の外側に、光学部材60を実装基板20に固着する際に上記空間から溢れ出た封止樹脂を堰き止める環状の堰部27が突設されている。   The light emitting device 1 of the present embodiment has a rectangular plate shape in which the LED chip 10 has conductor patterns 23 and 23 for supplying power to the LED chip 10 on one surface side, and the LED chip 10 is mounted on the one surface side. An optical member that controls the light distribution of the light emitted from the mounting substrate 20 and the LED chip 10 and is fixed to the one surface side of the mounting substrate 20 in such a manner that the LED chip 10 is housed between the mounting substrate 20 and the mounting substrate 20. A plurality of dome-shaped optical members 60 made of a translucent material, and a plurality of LED chips 10 that are electrically connected to the LED chips 10 in a space surrounded by the optical members 60 and the mounting substrate 20 (books). In the embodiment, the sealing portion 50 made of a light-transmitting sealing resin sealing the two bonding wires 14 and the light emitted from the LED chip 10 and transmitted through the sealing portion 50 and the optical member 60 are used. The phosphor particles that are excited and emit visible light having a wavelength longer than that of the LED chip 10 are dispersed in a base material made of a light-transmitting material, and the LED is placed between the mounting substrate 20 on the one surface side of the mounting substrate 20. And a dome-shaped color conversion member 70 disposed so as to surround the chip 10 and the like. Here, the color conversion member 70 is disposed so that an air layer 80 is formed between the light emitting surface 60 b of the optical member 60 on the one surface side of the mounting substrate 20. Further, the mounting substrate 20 has an annular dam portion 27 protruding outside the optical member 60 on the one surface so as to dam the sealing resin overflowing from the space when the optical member 60 is fixed to the mounting substrate 20. Has been.

ここにおいて、本実施形態の発光装置1を照明器具の光源として用いる場合には、例えば、照明器具における金属(例えば、Al,Cuなどの熱伝導率の高い金属)製の器具本体100(図2、図5、図6参照)と実装基板20とを、シリカやアルミナなどのフィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)からなる接合用部材90により接合すればよい。ここで、上記樹脂シートからなる接合用部材90は、電気絶縁性を有するとともに熱伝導率が高く加熱時の流動性が高く凹凸面への密着性が高いので、実装基板20を金属製の器具本体100に接合用部材90を介して接合する(実装基板20と器具本体100との間に接合用部材90を介在させた後で接合用部材90を加熱することで実装基板20と器具本体100とを接合する)際に接合用部材90と実装基板20および器具本体100との間に空隙が発生するのを防止することができて、密着不足による熱抵抗の増大やばらつきの発生を防止することができ、従来のように発光装置を回路基板に実装して回路基板と器具本体との間にサーコン(登録商標)のようなゴムシート状の放熱シートなどを挟む場合に比べて、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上するとともに熱抵抗のばらつきが小さくなり、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。なお、本実施形態の発光装置1を照明器具の光源として用いる場合には、図5に示すように、器具本体100に複数個の発光装置1を実装して複数個の発光装置1を直列接続したり並列接続したりすればよい。また、発光装置1は、金属製の器具本体100に限らず、接合用部材90を介して金属製部材に接合するようにしてもよい。   Here, when using the light-emitting device 1 of this embodiment as a light source of a lighting fixture, for example, the fixture main body 100 (FIG. 2) made of metal (for example, a metal having high thermal conductivity such as Al or Cu) in the lighting fixture. 5 and 6) and the mounting substrate 20, a resin sheet containing a filler made of a filler such as silica or alumina and having a low viscosity when heated (for example, an epoxy resin sheet highly filled with fused silica) What is necessary is just to join by the joining member 90 which consists of such an organic green sheet. Here, since the joining member 90 made of the resin sheet has electrical insulation properties, has high thermal conductivity, high fluidity during heating, and high adhesion to the uneven surface, the mounting substrate 20 is made of a metal instrument. Joining to the main body 100 via the joining member 90 (the joining member 90 is heated between the mounting substrate 20 and the instrument main body 100 and then the joining member 90 is heated to thereby heat the mounting substrate 20 and the instrument main body 100. Can be prevented from generating gaps between the bonding member 90 and the mounting substrate 20 and the instrument main body 100, thereby preventing an increase in thermal resistance and variations due to insufficient adhesion. Compared to the conventional case where the light emitting device is mounted on a circuit board and a rubber sheet-like heat radiation sheet such as Sarcon (registered trademark) is sandwiched between the circuit board and the instrument body, the LED chip 10 Since the heat resistance up to the instrument body 100 can be reduced, the heat dissipation is improved, the variation in the heat resistance is reduced, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, so that the input power can be increased, High output can be achieved. In addition, when using the light-emitting device 1 of this embodiment as a light source of a lighting fixture, as shown in FIG. 5, the several light-emitting device 1 is mounted in the fixture main body 100, and the several light-emitting device 1 is connected in series. Or connect in parallel. In addition, the light emitting device 1 is not limited to the metal instrument body 100 but may be bonded to the metal member via the bonding member 90.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板を用いており、SiC基板の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部がエピタキシャル成長法(例えば、MOVPE法など)により成長されている。ここで、LEDチップ10は、一表面側(図1(a)における上面側)にアノード電極(図示せず)が形成され、他表面側(図1(a)における下面側)にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。また、LEDチップ10の構造は特に限定するものではなく、例えば、結晶成長用基板の主表面側に発光部などをエピタキシャル成長した後に発光部を支持する支持基板(例えば、Si基板など)を発光部に固着してから、結晶成長用基板などを除去したものを用いてもよい。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and uses an n-type SiC substrate having a lattice constant and a crystal structure close to GaN as compared to a sapphire substrate and having conductivity as a crystal growth substrate. In addition, a light emitting part formed of a GaN-based compound semiconductor material and having a laminated structure part having a double hetero structure, for example, is grown on the main surface side of the SiC substrate by an epitaxial growth method (for example, MOVPE method). Here, the LED chip 10 has an anode electrode (not shown) formed on one surface side (upper surface side in FIG. 1A) and a cathode electrode on the other surface side (lower surface side in FIG. 1A). Is formed. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. Further, the structure of the LED chip 10 is not particularly limited. For example, a light emitting unit is formed by supporting a light emitting unit after epitaxially growing the light emitting unit or the like on the main surface side of the crystal growth substrate. Alternatively, a substrate obtained by removing the crystal growth substrate or the like may be used.

実装基板20は、熱伝導性材料からなりLEDチップ10が搭載される矩形板状の伝熱板21と、伝熱板21の一面側(図1(a)における上面側)に例えばポリオレフィン系の固着シート29(図2参照)を介して固着された矩形板状のフレキシブルプリント配線板からなる配線基板22とで構成され、配線基板22の中央部に伝熱板21におけるLEDチップ10の実装面(上記一面の一部)を露出させる矩形状の窓孔24が形成されており、LEDチップ10が窓孔24の内側に配置された後述のサブマウント部材30を介して伝熱板21に搭載されている。したがって、LEDチップ10で発生した熱が配線基板22を介さずにサブマウント部材30および伝熱板21に伝熱されるようになっている。ここにおいて、伝熱板21の上記一面には、サブマウント部材30の位置決め精度を高めるためのアライメントマーク21c(図2参照)が形成されている。   The mounting substrate 20 is made of a thermally conductive material and has a rectangular plate-shaped heat transfer plate 21 on which the LED chip 10 is mounted, and one surface side of the heat transfer plate 21 (upper surface side in FIG. 1A), for example, polyolefin-based. And a wiring board 22 made of a rectangular flexible printed wiring board fixed via a fixing sheet 29 (see FIG. 2). The mounting surface of the LED chip 10 on the heat transfer plate 21 at the center of the wiring board 22 A rectangular window hole 24 for exposing (a part of the one surface) is formed, and the LED chip 10 is mounted on the heat transfer plate 21 via a submount member 30 described later disposed inside the window hole 24. Has been. Therefore, the heat generated in the LED chip 10 is transferred to the submount member 30 and the heat transfer plate 21 without passing through the wiring board 22. Here, an alignment mark 21c (see FIG. 2) for increasing the positioning accuracy of the submount member 30 is formed on the one surface of the heat transfer plate 21.

なお、本実施形態では、伝熱板21の熱伝導性材料としてCuを採用しているが、Cuに限らず、例えば、Alなどを採用してもよい。また、本実施形態では、LEDチップ10の発光部が結晶成長用基板よりも伝熱板21から離れた側となるように伝熱板21に搭載されているが、LEDチップ10の発光部が結晶成長用基板よりも伝熱板21に近い側となるように伝熱板21に搭載するようにしてもよい。光取り出し効率を考えた場合には、発光部を伝熱板21から離れた側に配置することが望ましいが、本実施形態では結晶成長用基板と発光部とが同程度の屈折率を有しているので、発光部を伝熱板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   In this embodiment, Cu is adopted as the heat conductive material of the heat transfer plate 21, but not limited to Cu, for example, Al may be adopted. In the present embodiment, the LED chip 10 is mounted on the heat transfer plate 21 so that the light emitting portion of the LED chip 10 is farther from the heat transfer plate 21 than the crystal growth substrate. The heat transfer plate 21 may be mounted so as to be closer to the heat transfer plate 21 than the crystal growth substrate. In consideration of light extraction efficiency, it is desirable to arrange the light emitting part on the side away from the heat transfer plate 21, but in this embodiment, the crystal growth substrate and the light emitting part have the same refractive index. Therefore, even if the light emitting part is arranged on the side close to the heat transfer plate 21, the light extraction loss does not become too large.

上述の配線基板22は、ポリイミドフィルムからなる絶縁性基材22aの一表面側に、LEDチップ10への給電用の一対の導体パターン23,23が設けられるとともに、各導体パターン23,23および絶縁性基材22aにおいて導体パターン23,23が形成されていない部位を覆う白色系のレジスト(樹脂)からなる保護層26が積層されている。したがって、LEDチップ10の側面から放射され保護層26の表面に入射した光が保護層26の表面で反射されるので、LEDチップ10から放射された光が配線基板22に吸収されるのを防止することができ、外部への光取り出し効率の向上による光出力の向上を図れる。なお、各導体パターン23,23は、絶縁性基材22aの外周形状の半分よりもやや小さな外周形状に形成されている。また、絶縁性基材22aの材料としては、FR4、FR5、紙フェノールなどを採用してもよい。   The above-mentioned wiring board 22 is provided with a pair of conductor patterns 23 and 23 for supplying power to the LED chip 10 on one surface side of an insulating base material 22a made of a polyimide film. A protective layer 26 made of a white resist (resin) covering a portion of the conductive base material 22a where the conductor patterns 23, 23 are not formed is laminated. Therefore, the light emitted from the side surface of the LED chip 10 and incident on the surface of the protective layer 26 is reflected by the surface of the protective layer 26, thereby preventing the light emitted from the LED chip 10 from being absorbed by the wiring substrate 22. Thus, the light output can be improved by improving the light extraction efficiency to the outside. In addition, each conductor pattern 23 and 23 is formed in the outer periphery shape a little smaller than half of the outer periphery shape of the insulating base material 22a. Further, FR4, FR5, paper phenol or the like may be employed as the material of the insulating base material 22a.

保護層26は、配線基板22の窓孔24の近傍において各導体パターン23,23の2箇所が露出し、配線基板22の周部において各導体パターン23,23の1箇所が露出するようにパターニングされており、各導体パターン23,23は、配線基板22の窓孔24近傍において露出した2つの矩形状の部位が、ボンディングワイヤ14が接続される端子部23aを構成し、配線基板22の周部において露出した円形状の部位が外部接続用電極部23bを構成している。なお、配線基板22の導体パターン23,23は、Cu膜とNi膜とAu膜との積層膜により構成されている。また、2つの外部接続用電極部23bのうちLEDチップ10の上記アノード電極が電気的に接続される外部接続用電極部23b(図6における右側の外部接続用電極部23b)には「+」の表示が形成され、LEDチップ10の上記カソード電極が電気的に接続される外部接続用電極部23b(図6における左側の外部接続用電極部23b)には「−」の表示が形成されているので、発光装置1における両外部接続用電極部23b,23bの極性を視認することができ、誤接続を防止することができる。   The protective layer 26 is patterned so that two portions of the conductor patterns 23 and 23 are exposed in the vicinity of the window hole 24 of the wiring substrate 22 and one portion of the conductor patterns 23 and 23 is exposed in the peripheral portion of the wiring substrate 22. In each conductor pattern 23, 23, two rectangular portions exposed in the vicinity of the window hole 24 of the wiring substrate 22 constitute a terminal portion 23 a to which the bonding wire 14 is connected. The circular part exposed in the part constitutes the external connection electrode part 23b. The conductor patterns 23 and 23 of the wiring board 22 are constituted by a laminated film of a Cu film, a Ni film, and an Au film. In addition, “+” is used for the external connection electrode portion 23b (the right external connection electrode portion 23b in FIG. 6) to which the anode electrode of the LED chip 10 is electrically connected, of the two external connection electrode portions 23b. Is displayed, and “−” is formed on the external connection electrode portion 23b (the left external connection electrode portion 23b in FIG. 6) to which the cathode electrode of the LED chip 10 is electrically connected. Therefore, the polarities of the external connection electrode portions 23b and 23b in the light emitting device 1 can be visually recognized, and erroneous connection can be prevented.

ところで、LEDチップ10は、LEDチップ10と伝熱板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和する上述のサブマウント部材30を介して伝熱板21に搭載されている。ここで、サブマウント部材30は、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されている。   By the way, the LED chip 10 is mounted on the heat transfer plate 21 via the above-described submount member 30 that relieves stress acting on the LED chip 10 due to a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21. Has been. Here, the submount member 30 is formed in a rectangular plate shape having a size larger than the chip size of the LED chip 10.

サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を伝熱板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。したがって、本実施形態の発光装置1では、LEDチップ10がサブマウント部材30を介して伝熱板21に搭載されているので、LEDチップ10で発生した熱をサブマウント部材30および伝熱板21を介して効率良く放熱させることができるとともに、LEDチップ10と伝熱板21との線膨張率差に起因してLEDチップ10に働く応力を緩和することができる。   The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 in the heat transfer plate 21. Yes. Therefore, in the light emitting device 1 of the present embodiment, since the LED chip 10 is mounted on the heat transfer plate 21 via the submount member 30, the heat generated in the LED chip 10 is transferred to the submount member 30 and the heat transfer plate 21. The heat acting on the LED chip 10 due to the difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21 can be relieved.

本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される電極パターン31(図2参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方の導体パターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方の導体パターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましく、サブマウント部材30がCuであって、AuSnを用いて接合する場合には、サブマウント部材30およびLEDチップにおける接合表面にあらかじめAuまたはAgからなる金属層を形成する前処理が必要である。また、サブマウント部材30と伝熱板21とは、例えば、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましいが、AuSnを用いて接合する場合には、伝熱板21における接合表面にあらかじめAuまたはAgからなる金属層を形成する前処理が必要である。   In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. An electrode pattern 31 (see FIG. 2) provided on the surface and connected to the cathode electrode and electrically connected to one conductor pattern 23 via a bonding wire 14 made of a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.) The anode electrode is electrically connected to the other conductor pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. Preferably, when the submount member 30 is made of Cu and bonded using AuSn, a pretreatment is required in which a metal layer made of Au or Ag is formed in advance on the bonding surface of the submount member 30 and the LED chip. It is. Further, the submount member 30 and the heat transfer plate 21 are preferably bonded using, for example, lead-free solder such as AuSn or SnAgCu. However, when bonding using AuSn, the bonding in the heat transfer plate 21 is performed. A pretreatment for forming a metal layer made of Au or Ag in advance on the surface is necessary.

サブマウント部材30の材料はAlNに限らず、線膨張率が結晶成長用基板の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Si、Cu、CuWなどを採用してもよい。なお、サブマウント部材30は、上述の熱伝導機能を有しており、伝熱板21におけるLEDチップ10側の表面の面積はLEDチップ10における伝熱板21側の表面の面積よりも十分に大きいことが望ましい。   The material of the submount member 30 is not limited to AlN, and may be any material that has a linear expansion coefficient that is relatively close to 6H—SiC that is a material for a crystal growth substrate and that has a relatively high thermal conductivity. Si, Cu, CuW or the like may be employed. The submount member 30 has the above-described heat conduction function, and the area of the surface of the heat transfer plate 21 on the LED chip 10 side is sufficiently larger than the area of the surface of the LED chip 10 on the heat transfer plate 21 side. Larger is desirable.

また、本実施形態の発光装置1では、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22の保護層26の表面よりも伝熱板21から離れるように設定してあり、LEDチップ10から側方に放射された光が配線基板22の窓孔24の内周面を通して配線基板22に吸収されるのを防止することができる。なお、サブマウント部材30においてLEDチップ10が接合される側の表面においてLEDチップ10との接合部位の周囲に、LEDチップ10から放射された光を反射する反射膜を形成すれば、LEDチップ10の側面から放射された光がサブマウント部材30に吸収されるのを防止することができ、外部への光取出し効率をさらに高めることが可能となる。ここで、反射膜は、例えば、Ni膜とAl膜との積層膜により構成すればよい。   In the light emitting device 1 of the present embodiment, the thickness dimension of the submount member 30 is set so that the surface of the submount member 30 is farther from the heat transfer plate 21 than the surface of the protective layer 26 of the wiring board 22. In addition, light emitted from the LED chip 10 to the side can be prevented from being absorbed by the wiring board 22 through the inner peripheral surface of the window hole 24 of the wiring board 22. In addition, if a reflective film that reflects the light emitted from the LED chip 10 is formed around the bonding portion with the LED chip 10 on the surface of the submount member 30 on the side to which the LED chip 10 is bonded, the LED chip 10 is formed. It is possible to prevent the light radiated from the side surface from being absorbed by the submount member 30 and to further increase the light extraction efficiency to the outside. Here, the reflective film may be constituted by a laminated film of a Ni film and an Al film, for example.

上述の封止部50の材料である封止樹脂としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、例えばアクリル樹脂などを用いてもよい。また、封止樹脂の代わりに、ガラスを用いてもよい。   As the sealing resin that is the material of the sealing portion 50 described above, a silicone resin is used. However, the sealing resin is not limited to the silicone resin, and for example, an acrylic resin may be used. Further, glass may be used instead of the sealing resin.

光学部材60は、透光性材料(例えば、シリコーン樹脂、ガラスなど)の成形品であってドーム状に形成されている。ここで、本実施形態では、光学部材60をシリコーン樹脂の成形品により構成しているので、光学部材60と封止部50との屈折率差および線膨張率差を小さくすることができる。なお、封止部50の材料がアクリル樹脂の場合には、光学部材60もアクリル樹脂により形成することが好ましい。   The optical member 60 is a molded product of a translucent material (for example, silicone resin, glass, etc.) and is formed in a dome shape. Here, in this embodiment, since the optical member 60 is formed of a silicone resin molded product, the difference in refractive index and the linear expansion coefficient between the optical member 60 and the sealing portion 50 can be reduced. In addition, when the material of the sealing part 50 is an acrylic resin, it is preferable to form the optical member 60 also with an acrylic resin.

ところで、光学部材60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されており、LEDチップ10と光軸が一致するように配置されている。したがって、LEDチップ10から放射され光学部材60の光入射面60aに入射された光が光出射面60bと空気層80との境界で全反射されることなく色変換部材70まで到達しやすくなり、全光束を高めることができる。なお、LEDチップ10の側面から放射された光は封止部50および光学部材60および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体粒子を励起したり蛍光体粒子には衝突せずに色変換部材70を透過したりする。また、光学部材60は、位置によらず法線方向に沿って肉厚が一様となるように形成されている。   By the way, the optical member 60 has a light emitting surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light emitting surface 60b and the air layer 80 described above. 10 and the optical axis coincide with each other. Therefore, the light emitted from the LED chip 10 and incident on the light incident surface 60a of the optical member 60 can easily reach the color conversion member 70 without being totally reflected at the boundary between the light emitting surface 60b and the air layer 80, The total luminous flux can be increased. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50, the optical member 60, and the air layer 80 to reach the color conversion member 70 and excites the phosphor particles of the color conversion member 70, or the phosphor. The particles pass through the color conversion member 70 without colliding with the particles. Further, the optical member 60 is formed so that the thickness is uniform along the normal direction regardless of the position.

色変換部材70は、シリコーン樹脂のような透光性材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する蛍光体粒子とを混合した混合物の成形品により構成されている(色変換部材70は、蛍光体粒子が透光性材料からなる母材に分散されている)。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と蛍光体粒子から放射された光とが色変換部材70の光出射面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材70の材料として用いる透光性材料に混合する蛍光体粒子も黄色蛍光体粒子に限らず、例えば、赤色蛍光体粒子と緑色蛍光体粒子とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded product of a mixture in which a translucent material such as a silicone resin and phosphor particles that are excited by blue light emitted from the LED chip 10 and emit broad yellow light are mixed. (The color conversion member 70 has phosphor particles dispersed in a base material made of a translucent material.) Therefore, in the light emitting device 1 of this embodiment, the blue light emitted from the LED chip 10 and the light emitted from the phosphor particles are emitted through the light emitting surface 70b of the color conversion member 70, and white light is emitted. Obtainable. The translucent material used as the material of the color conversion member 70 is not limited to a silicone resin, but an organic / inorganic hybrid in which, for example, an acrylic resin, glass, an organic component and an inorganic component are mixed and combined at the nm level or the molecular level. Materials etc. may be adopted. Further, the phosphor particles mixed with the translucent material used as the material of the color conversion member 70 are not limited to the yellow phosphor particles. For example, white light is obtained even when the red phosphor particles and the green phosphor particles are mixed. be able to.

ここで、色変換部材70は、光入射面70aが光学部材60の光出射面60bに沿った形状に形成されている。したがって、光学部材60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の光入射面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。また、色変換部材70は、実装基板20側の端縁(開口部の周縁)を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂、低融点ガラスなど)を用いて固着すればよい。   Here, the color conversion member 70 has a light incident surface 70 a formed along the light emitting surface 60 b of the optical member 60. Accordingly, the distance between the light emitting surface 60b in the normal direction and the light incident surface 70a of the color conversion member 70 is a substantially constant value regardless of the position of the light emitting surface 60b of the optical member 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. Further, the color conversion member 70 is fixed to the mounting substrate 20 with an end edge (periphery of the opening) on the mounting substrate 20 side using, for example, an adhesive (for example, silicone resin, epoxy resin, low melting point glass, or the like). do it.

本実施形態の発光装置1を光源として用いた上述の照明器具は、図5および図6に示すように、各発光装置1の接続関係を規定する配線パターン202が絶縁性基材201の一表面側に形成された回路基板200を備えている。なお、本実施形態では、複数の発光装置1を直列接続しているが、複数の発光装置1の接続関係は特に限定するものではなく、例えば、並列接続するようにしてもよいし、直列接続と並列接続とを組み合わせてもよい。   In the above-described lighting fixture using the light-emitting device 1 of the present embodiment as a light source, the wiring pattern 202 that defines the connection relationship of each light-emitting device 1 has one surface of the insulating substrate 201 as shown in FIGS. A circuit board 200 formed on the side is provided. In the present embodiment, the plurality of light emitting devices 1 are connected in series. However, the connection relationship between the plurality of light emitting devices 1 is not particularly limited. For example, the light emitting devices 1 may be connected in parallel or connected in series. And parallel connection may be combined.

回路基板200は、浅い有底円筒状の器具本体100内において当該器具本体100の底壁100aから離間して配置されるものであり、各発光装置1それぞれに対応する部位に各発光装置1の一部を通す開孔窓204が形成されている。なお、回路基板200の絶縁性基材201の材料としては、例えば、FR4のようなガラスエポキシ樹脂を採用すればよいが、ガラスエポキシ樹脂に限らず、例えば、ポリイミド系樹脂、フェノール樹脂などでもよい。また、器具本体100の形状は特に限定するものではなく、例えば、平板状でもよい。   The circuit board 200 is disposed in the shallow bottomed cylindrical instrument body 100 so as to be separated from the bottom wall 100a of the instrument body 100, and the circuit board 200 is disposed at a position corresponding to each light-emitting device 1 respectively. An aperture window 204 through which a part passes is formed. In addition, as a material of the insulating base material 201 of the circuit board 200, for example, a glass epoxy resin such as FR4 may be adopted, but not limited to a glass epoxy resin, for example, a polyimide resin, a phenol resin, or the like may be used. . Moreover, the shape of the instrument main body 100 is not specifically limited, For example, flat form may be sufficient.

上述の回路基板200は、器具本体100の底壁100aに貫設されている挿通孔100cに挿通された給電用のリード線が挿通される電線挿通孔206が貫設されており、電線挿通孔206に挿通された一対の電線が電気的に接続されるようになっている。また、回路基板200は、器具本体100の底壁100a側とは反対の表面側に白色系のレジスト層からなる光反射層203が形成されており、配線パターン202の大部分が光反射層203により覆われている。   The circuit board 200 described above is provided with a wire insertion hole 206 through which a lead wire for power supply inserted through the insertion hole 100c formed in the bottom wall 100a of the instrument body 100 is inserted. A pair of electric wires inserted through 206 is electrically connected. Further, the circuit board 200 has a light reflecting layer 203 made of a white resist layer formed on the surface side opposite to the bottom wall 100 a side of the instrument body 100, and most of the wiring pattern 202 is the light reflecting layer 203. Covered by.

また、回路基板200は、各開口窓204の開口サイズが発光装置1における実装基板20の平面サイズよりもやや大きく設定されている。なお、回路基板200には、発光装置1のLEDチップ10へ過電圧が印加されるのを防止するために、過電圧防止用の表面実装型のツェナダイオード231(図6参照)および表面実装型のセラミックコンデンサ232(図6参照)が各開口窓204の近傍で実装されている。   In the circuit board 200, the opening size of each opening window 204 is set to be slightly larger than the planar size of the mounting substrate 20 in the light emitting device 1. In addition, in order to prevent an overvoltage from being applied to the LED chip 10 of the light emitting device 1, a surface mount type Zener diode 231 (see FIG. 6) for preventing overvoltage and a surface mount type ceramic are provided on the circuit board 200. A capacitor 232 (see FIG. 6) is mounted in the vicinity of each opening window 204.

一方、発光装置1は、実装基板20の各外部接続用電極部23bが端子板210を介して回路基板200の配線パターン202と電気的に接続されている。ここにおいて、端子板210は、細長の金属板の一端部をL字状に曲成することにより配線パターン202に厚み方向が重なる形で半田などを用いて接合される端子片211を形成するとともに、他端部をJ字状に曲成することにより外部接続用電極部23bに厚み方向が一致する形で半田などを用いて接合される端子片212を形成したものであり、器具本体100と回路基板200との線膨張率差に起因して接続端子210と外部接続用電極部23bおよび配線パターン202それぞれとの接合部に発生する応力を緩和可能となっており、各発光装置1と回路基板200との間の接続信頼性を高めることができる。   On the other hand, in the light emitting device 1, each external connection electrode portion 23 b of the mounting board 20 is electrically connected to the wiring pattern 202 of the circuit board 200 via the terminal board 210. Here, the terminal plate 210 forms a terminal piece 211 that is joined to the wiring pattern 202 by using solder or the like so as to overlap the wiring pattern 202 by bending one end of an elongated metal plate into an L shape. The other end portion is bent in a J shape to form a terminal piece 212 to be joined to the external connection electrode portion 23b using solder or the like so that the thickness direction thereof matches. It is possible to relieve the stress generated at the joint between the connection terminal 210, the external connection electrode portion 23b, and the wiring pattern 202 due to the difference in linear expansion coefficient with the circuit board 200. Connection reliability with the substrate 200 can be improved.

また、上述のシート状の接合用部材90の平面サイズを伝熱板21の平面サイズよりも大きく設定しておけば、接合用部材90と伝熱板21とが同じ平面サイズに形成されている場合に比べて、伝熱板21と金属部材である器具本体100との間の沿面距離を長くすることができ、照明器具用の光源として用いる場合の耐雷サージ性を高めることができる(ただし、一般的に屋内用の照明器具と屋外用の照明器具とで要求される発光装置と金属部材との沿面距離は異なり、屋外用の照明器具の方がより長い沿面距離を要求される)。ここにおいて、シート状の接合用部材90の厚みについては、耐雷サージ性の要求耐圧に応じて厚みを設計する必要があるが、熱抵抗を低減する観点からはより薄く設定することが望ましい。したがって、接合用部材90に関しては、厚みを設定した上で、沿面距離の要求を満足できるように平面サイズを設定すればよい。   Moreover, if the planar size of the above-mentioned sheet-like joining member 90 is set larger than the planar size of the heat transfer plate 21, the joining member 90 and the heat transfer plate 21 are formed in the same planar size. Compared to the case, the creeping distance between the heat transfer plate 21 and the tool body 100 that is a metal member can be increased, and the lightning surge resistance when used as a light source for a lighting fixture can be increased (however, In general, the creeping distance between the light emitting device and the metal member required for the indoor lighting fixture and the outdoor lighting fixture is different, and the outdoor lighting fixture requires a longer creepage distance). Here, the thickness of the sheet-like joining member 90 needs to be designed in accordance with the lightning surge resistance required withstand voltage, but it is desirable to set it thinner from the viewpoint of reducing thermal resistance. Therefore, regarding the joining member 90, after setting the thickness, the planar size may be set so that the creepage distance requirement can be satisfied.

上述の発光装置1の製造方法にあたっては、例えば、LEDチップ10と各導体パターン23,23とをそれぞれ2本のボンディングワイヤ14を介して電気的に接続した後、配線基板22の窓孔24に連続して形成されている注入孔28からサブマウント部材30と配線基板22との隙間に封止部50の一部となる液状の封止樹脂(例えば、シリコーン樹脂)を注入した後に硬化させ、その後、ドーム状の光学部材60の内側に上述の封止部50の残りの部分となる液状の封止樹脂(例えば、シリコーン樹脂)を注入してから、光学部材60を実装基板20における所定位置に配置して封止樹脂を硬化させることにより封止部50を形成するのと同時に光学部材60を実装基板20に固着し、その後、色変換部材70を実装基板20に固着するような製造方法が考えられるが、このような製造方法でも、製造過程において封止部50に気泡(ボイド)が発生する恐れがあるので、光学部材60に液状の封止樹脂を多めに注入する必要がある。   In the manufacturing method of the above-described light emitting device 1, for example, after the LED chip 10 and each of the conductor patterns 23 and 23 are electrically connected via the two bonding wires 14, the LED chip 10 is connected to the window hole 24 of the wiring board 22. After injecting liquid sealing resin (for example, silicone resin) that becomes a part of the sealing portion 50 into the gap between the submount member 30 and the wiring board 22 from the continuously formed injection hole 28, the resin is cured. Thereafter, liquid sealing resin (for example, silicone resin) which becomes the remaining portion of the sealing portion 50 described above is injected into the inside of the dome-shaped optical member 60, and then the optical member 60 is placed at a predetermined position on the mounting substrate 20. The optical member 60 is fixed to the mounting substrate 20 at the same time as the sealing portion 50 is formed by being disposed in the substrate and curing the sealing resin, and then the color conversion member 70 is fixed to the mounting substrate 20. Such a manufacturing method can be considered, but even in such a manufacturing method, bubbles may be generated in the sealing portion 50 during the manufacturing process, so a large amount of liquid sealing resin is injected into the optical member 60. There is a need to.

そこで、本実施形態の発光装置1では、上述のように、実装基板20の上記一表面において光学部材60の外側に、光学部材60を実装基板20に固着する際に上記空間(光学部材60と実装基板20とで囲まれた空間)から溢れ出た封止樹脂を堰き止める環状(本実施形態では、円環状)の堰部27を突設してある。ここにおいて、堰部27は、白色系のレジストにより形成されている。また、堰部27は、当該堰部27の内周面から内方へ延出し当該堰部27の中心と光学部材60の中心軸とをセンタリングする複数(本実施形態では、4つ)のセンタリング用爪部27bが周方向に離間して等間隔で設けられ、且つ、色変換部材70の位置決め部を兼ねている。ここで、上述のセンタリング用爪部27bの数は4つに限定するものではないが、少なくとも3つ設けることが望ましく、堰部27と光学部材60との間に溜めることが可能な封止樹脂の許容量を多くするためにセンタリング用爪部27bの幅寸法は小さいほうが望ましい。   Therefore, in the light emitting device 1 of the present embodiment, as described above, when the optical member 60 is fixed to the mounting substrate 20 outside the optical member 60 on the one surface of the mounting substrate 20, the space (with the optical member 60 and the optical member 60). An annular (in the present embodiment, annular) dam portion 27 is provided to dam up the sealing resin overflowing from the space surrounded by the mounting substrate 20. Here, the dam portion 27 is formed of a white resist. In addition, the dam portion 27 extends inward from the inner peripheral surface of the dam portion 27 to center the center of the dam portion 27 and the central axis of the optical member 60 (four in this embodiment). The claw portions 27b are spaced apart in the circumferential direction and provided at equal intervals, and also serve as a positioning portion for the color conversion member 70. Here, the number of the claw portions 27b for centering is not limited to four, but it is desirable to provide at least three, and the sealing resin that can be stored between the dam portion 27 and the optical member 60 In order to increase the permissible amount, it is desirable that the width dimension of the centering claw portion 27b is small.

また、色変換部材70は、実装基板20側の端縁に、堰部27に係合する切欠部71が全周に亘って形成されている。したがって、本実施形態の発光装置1では、実装基板20に対する色変換部材70の位置決め精度を高めることができ、また、色変換部材70と光学部材60との間隔を短くすることができる。なお、切欠部71は、色変換部材70の端縁側と内面70a側とが開放されている。   Further, the color conversion member 70 has a notch 71 that engages with the weir 27 on the edge of the mounting substrate 20 side over the entire circumference. Therefore, in the light emitting device 1 of the present embodiment, the positioning accuracy of the color conversion member 70 with respect to the mounting substrate 20 can be increased, and the interval between the color conversion member 70 and the optical member 60 can be shortened. The notch 71 is open on the edge side and the inner surface 70a side of the color conversion member 70.

また、上述の実装基板20における導体パターン23,23は、色変換部材70よりも外側において露出した部位が上述の外部接続用電極部23b,23bを構成している。   The portions of the conductive patterns 23 and 23 on the mounting substrate 20 that are exposed outside the color conversion member 70 constitute the external connection electrode portions 23b and 23b.

本実施形態の発光装置1の製造にあたっては、図4(a)に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、配線基板22の窓孔24に連続して形成されている樹脂注入孔28(図2参照)からサブマウント部材30と配線基板22との隙間に上述の封止部50の一部となる液状の封止樹脂(例えば、シリコーン樹脂)50aを注入するとともに、ドーム状の光学部材60の内側に上述の封止部50の一部となる液状の封止樹脂(例えば、シリコーン樹脂)50aを注入して光学部材60を実装基板20に対向させ、図4(b)に示すように光学部材60と実装基板20とを近づけ、図4(c)に示すように光学部材60を位置決めしてから液状の封止樹脂50aを硬化させることにより封止部50を形成するとともに光学部材60を実装基板20に固着し、その後、色変換部材70を実装基板20に固着するようにしている。ここで、図4(a)では、ドーム状の光学部材60の内側に、光学部材60の内側空間の容積よりも多い適量(定量)の封止樹脂50aを注入するようにしている。また、実装基板20の上記一表面側において光学部材60と堰部27と保護層26とで囲まれた空間に溜まった封止樹脂50aは、硬化させることにより図1(a)における樹脂部50bとなる。   In manufacturing the light emitting device 1 of the present embodiment, as shown in FIG. 4A, after the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected. The liquid which becomes a part of the above-described sealing portion 50 in the gap between the submount member 30 and the wiring board 22 from the resin injection hole 28 (see FIG. 2) formed continuously to the window hole 24 of the wiring board 22. And a liquid sealing resin (for example, silicone resin) 50a that becomes a part of the above-described sealing portion 50 is injected inside the dome-shaped optical member 60. Then, the optical member 60 is made to face the mounting substrate 20, the optical member 60 and the mounting substrate 20 are brought closer as shown in FIG. 4B, and the optical member 60 is positioned as shown in FIG. 4C. Liquid sealing tree 50a to form a sealing portion 50 formed by curing the fixed optical member 60 to the mounting substrate 20, then, so that securing the color conversion member 70 to the mounting substrate 20. Here, in FIG. 4A, an appropriate amount (quantitative amount) of the sealing resin 50 a larger than the volume of the inner space of the optical member 60 is injected inside the dome-shaped optical member 60. In addition, the sealing resin 50a accumulated in the space surrounded by the optical member 60, the dam portion 27, and the protective layer 26 on the one surface side of the mounting substrate 20 is cured to be the resin portion 50b in FIG. It becomes.

このような製造方法によれば、製造過程で封止部50にボイドが発生しにくくなり、信頼性が高く且つ光出力が大きな発光装置1を提供することができる。ここで、図4(b)のように光学部材60を実装基板20に近づける前(つまり、図4(a)の段階)に、サブマウント部材30と配線基板22との隙間に注入した封止樹脂50aを硬化させておけば、図4(b)に示すように光学部材60と実装基板20とを近づける際にボイドが抜けやすくなるという利点がある。   According to such a manufacturing method, it is difficult to generate voids in the sealing portion 50 during the manufacturing process, and it is possible to provide the light emitting device 1 with high reliability and high light output. Here, the sealing injected into the gap between the submount member 30 and the wiring board 22 before the optical member 60 is brought close to the mounting board 20 as shown in FIG. If the resin 50a is cured, there is an advantage that voids are easily removed when the optical member 60 and the mounting substrate 20 are brought close to each other as shown in FIG.

以上説明した本実施形態の発光装置1では、LEDチップ10から放射された光の配光を制御する光学部材60がドーム状に形成され実装基板20との間にLEDチップ10を収納する形で実装基板20の上記一表面側に固着されており、光学部材60と実装基板20とで囲まれた上記空間に充実されLEDチップ10を封止した透光性の封止樹脂からなる封止部50と、実装基板20の上記一表面側で光学部材60を囲む形で配設されたドーム状の色変換部材70とを備え、実装基板20の上記一表面において光学部材60の外側に、光学部材60を実装基板20に固着する際に上記空間から溢れ出た封止樹脂50aを堰き止める環状の堰部27が突設され、堰部27は、当該堰部27の内周面から内方へ延出し当該堰部27の中心と光学部材60の中心軸とをセンタリングする複数のセンタリング用爪部27bが周方向に離間して設けられ、且つ、色変換部材70の位置決め部を兼ねており、導体パターン23,23は、色変換部材70よりも外側において露出した部位が外部接続用電極部23b,23bを構成しているので、封止部50にボイドが発生するのを防止できてボンディングワイヤ14,14の断線や光出力の低下を防止できるとともに光学部材60の位置決め精度を高めることができ、しかも、光学部材60と堰部27の内周面とが離間しているので、堰部27の外側へ封止樹脂50aが溢れて外部接続用電極部23b,23b上に付着するのを抑制することができ、外部接続用電極部23b,23bでの半田付け不良などの発生を防止可能となる。なお、図7に示すように、実装基板20の上記一表面において環状の堰部27と各外部接続用電極部23b,23bとの間それぞれに、堰部27と同じ材料(本実施形態では、白色のレジスト)により形成された弧状の樹脂止め部25,25を設ければ、製造時に封止樹脂50aが外部接続用電極部23b,23bの表面に付着するのをより確実に防止することができる。   In the light emitting device 1 of the present embodiment described above, the optical member 60 that controls the light distribution of the light emitted from the LED chip 10 is formed in a dome shape, and the LED chip 10 is accommodated between the mounting substrate 20. A sealing part that is fixed to the one surface side of the mounting substrate 20 and is made of a light-transmitting sealing resin that is filled in the space surrounded by the optical member 60 and the mounting substrate 20 and seals the LED chip 10. 50 and a dome-shaped color conversion member 70 disposed so as to surround the optical member 60 on the one surface side of the mounting substrate 20, and on the outer surface of the optical member 60 on the one surface of the mounting substrate 20. An annular dam portion 27 that dams up the sealing resin 50 a overflowing from the space when the member 60 is fixed to the mounting substrate 20 is projected, and the dam portion 27 extends inward from the inner peripheral surface of the dam portion 27. The center of the weir 27 and the optics A plurality of centering claws 27b for centering the central axis of the material 60 are provided apart from each other in the circumferential direction, and also serve as a positioning portion for the color conversion member 70. The conductor patterns 23 and 23 are formed of the color conversion member. Since the portions exposed outside 70 constitute the external connection electrode portions 23b and 23b, it is possible to prevent voids from being generated in the sealing portion 50, and the bonding wires 14 and 14 are disconnected and the light output is reduced. In addition, the positioning accuracy of the optical member 60 can be improved, and the optical member 60 and the inner peripheral surface of the dam portion 27 are separated from each other, so that the sealing resin 50a overflows outside the dam portion 27. Adhesion on the external connection electrode portions 23b and 23b can be suppressed, and the occurrence of poor soldering or the like in the external connection electrode portions 23b and 23b can be prevented. As shown in FIG. 7, the same material as the weir 27 (in this embodiment, between the annular weir 27 and each external connection electrode 23 b, 23 b on the one surface of the mounting substrate 20, If the arc-shaped resin stoppers 25, 25 formed of white resist are provided, it is possible to more reliably prevent the sealing resin 50a from adhering to the surfaces of the external connection electrode portions 23b, 23b during manufacturing. it can.

また、本実施形態の発光装置1では、堰部27が、白色系のレジストにより形成されているので、LEDチップ10から放射された光や蛍光体から放射された光が堰部27で吸収されるのを防止することができ、光出力の高出力化を図れる。また、本実施形態の発光装置1では、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22の上記一表面(保護層26の表面)よりも伝熱板21から離れるように設定してあるので、LEDチップ10から側方に放射された光が配線基板22に吸収されるのを抑制でき、光出力の高出力化を図れる。   Further, in the light emitting device 1 of the present embodiment, since the dam portion 27 is formed of a white resist, the light emitted from the LED chip 10 or the light emitted from the phosphor is absorbed by the dam portion 27. Can be prevented, and the optical output can be increased. In the light emitting device 1 of the present embodiment, the thickness dimension of the submount member 30 is such that the surface of the submount member 30 is farther from the heat transfer plate 21 than the one surface of the wiring board 22 (the surface of the protective layer 26). Therefore, the light emitted from the LED chip 10 to the side can be prevented from being absorbed by the wiring board 22 and the light output can be increased.

また、本実施形態の発光装置1は、実装基板20の上記一表面側にLEDチップ10への給電用の導体パターン23,23を有しているので、実装基板20を回路基板に実装することなく照明器具の器具本体100と熱結合させることが可能となり、LEDチップ10から器具本体100までの熱抵抗を小さくできて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   Moreover, since the light-emitting device 1 of this embodiment has the conductor patterns 23 and 23 for the electric power feeding to the LED chip 10 in the said one surface side of the mounting board | substrate 20, mounting board | substrate 20 is mounted in a circuit board. Since it is possible to thermally couple with the fixture body 100 of the lighting fixture, the thermal resistance from the LED chip 10 to the fixture body 100 can be reduced, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. The input power can be increased and the optical output can be increased.

ところで、本実施形態の発光装置1における色変換部材70は、図1に示すように、透光性材料(例えば、シリコーン樹脂など)からなる母材とは屈折率の異なる球状の光拡散材73をLEDチップ10の配向特性(LEDチップ10の各方向の光強度を矢印の方向と長さで表した放射光ベクトルの矢の先端の包絡面である配向立体)に基づく相対入射光強度(=〔特定方向の光強度/最大光強度〕×100%)が規定値を超える規定領域のみに分散させてある。ここにおいて、本実施形態におけるLEDチップ10の配向特性は、LEDチップ10の法線方向で光強度が最大となる指向性の強い配向特性であり、色変換部材70の頂部における相対入射光強度が色変換部材70の周部に比べて大きくなるので、上記規定値を90%に設定して、色変換部材70の頂部を上記規定領域としてある。ただし、上記規定値は90%に限らず、50%〜90%程度の範囲で適宜設定すればよい。   By the way, as shown in FIG. 1, the color conversion member 70 in the light emitting device 1 of the present embodiment is a spherical light diffusing material 73 having a refractive index different from that of a base material made of a translucent material (for example, silicone resin). The relative incident light intensity based on the orientation characteristics of the LED chip 10 (the orientation solid that is the envelope surface of the arrow tip of the radiated light vector in which the light intensity in each direction of the LED chip 10 is represented by the direction and length of the arrow) [Light intensity in a specific direction / maximum light intensity] × 100%) is dispersed only in a specified region exceeding a specified value. Here, the alignment characteristic of the LED chip 10 in this embodiment is a highly directional alignment characteristic in which the light intensity is maximized in the normal direction of the LED chip 10, and the relative incident light intensity at the top of the color conversion member 70 is Since it is larger than the peripheral portion of the color conversion member 70, the specified value is set to 90%, and the top of the color conversion member 70 is used as the specified region. However, the specified value is not limited to 90%, and may be set as appropriate within a range of about 50% to 90%.

しかして、本実施形態の発光装置1では、色変換部材70は、上記母材とは屈折率の異なる光拡散材73をLEDチップ10の配向特性に基づく相対入射光強度が規定値を超える規定領域のみに分散させてあるので、色変換部材70の全体に亘って光拡散材73を分散させる場合に比べて、光拡散材73の量を低減でき、しかも、色変換部材70において相対入射光強度が規定値を超える規定領域では光拡散材73によりLEDチップ10からの光を拡散させることができ、ストークスシフトによるエネルギ損失に起因して発熱する蛍光体粒子が局所的に集中するのを防止することができるから、光拡散材の量を低減でき且つ色変換部材70の局所的な発熱を抑制することが可能になって蛍光体粒子の光変換効率を向上させることが可能となるとともに色変換部材70の信頼性低下を防止することが可能になる。   Accordingly, in the light emitting device 1 of the present embodiment, the color conversion member 70 is a stipulation that the relative incident light intensity based on the orientation characteristics of the LED chip 10 exceeds the stipulated value for the light diffusing material 73 having a refractive index different from that of the base material. Since the light diffusing material 73 is dispersed only in the region, the amount of the light diffusing material 73 can be reduced as compared with the case where the light diffusing material 73 is dispersed over the entire color converting member 70. In the specified region where the intensity exceeds the specified value, the light from the LED chip 10 can be diffused by the light diffusing material 73, and the phosphor particles that generate heat due to energy loss due to the Stokes shift are prevented from being concentrated locally. Therefore, the amount of the light diffusing material can be reduced and the local heat generation of the color conversion member 70 can be suppressed, and the light conversion efficiency of the phosphor particles can be improved. It is possible to prevent a reduction in reliability of the color conversion member 70 together.

ここにおいて、光拡散材73の材料としては、例えば、SiO(ガラス)、TiO、Alなどの透明な無機材料を採用することが好ましい。なお、光拡散材73の屈折率が高くなるほど拡散効果が大きくなる。 Here, as the material of the light diffusing material 73, for example, a transparent inorganic material such as SiO 2 (glass), TiO 2 , Al 2 O 3 is preferably employed. The diffusion effect increases as the refractive index of the light diffusing material 73 increases.

また、色変換部材70の母材は、シリコーン樹脂に限らず、ガラスでもよく、ガラスを採用すれば、母材がシリコーン樹脂などの有機材料である場合に比べて、色変換部材70の温度上昇を抑制することができる。色変換部材70の母材を高融点ガラス、拡散材73を低融点ガラスとしてもよい。   The base material of the color conversion member 70 is not limited to the silicone resin, and may be glass. If glass is used, the temperature of the color conversion member 70 is increased as compared with the case where the base material is an organic material such as a silicone resin. Can be suppressed. The base material of the color conversion member 70 may be a high melting glass, and the diffusion material 73 may be a low melting glass.

また、光拡散材73は、球状のガラスに限らず、ガラス繊維や、メッシュ状のガラス、金属ナノ粒子などにより構成してもよい。ここで、光拡散材73としてガラス繊維を採用すれば、光拡散材73が球状のガラスである場合に比べて、色変換部材70の蛍光体粒子で発生した熱を効率的に放熱させることが可能となり、色変換部材70の局所的な発熱をより抑制することが可能となる。また、光拡散材73として金属ナノ粒子(例えば、金や銀などの貴金属のナノ粒子)を採用すれば、LEDチップ10からの光によって光拡散材73において表面プラズモンポラリトンが励起され、LEDチップ10からの光が増強されるので、外部への光取り出し効率を高めることが可能となる。   Further, the light diffusing material 73 is not limited to the spherical glass, and may be composed of glass fiber, mesh-like glass, metal nanoparticles, or the like. Here, if a glass fiber is adopted as the light diffusing material 73, heat generated in the phosphor particles of the color conversion member 70 can be efficiently radiated as compared with the case where the light diffusing material 73 is spherical glass. Thus, local heat generation of the color conversion member 70 can be further suppressed. If metal nanoparticles (for example, nanoparticles of noble metals such as gold and silver) are employed as the light diffusing material 73, surface plasmon polaritons are excited in the light diffusing material 73 by the light from the LED chip 10, and the LED chip 10. Since the light from the light is enhanced, the light extraction efficiency to the outside can be increased.

また、本実施形態の発光装置1では、色変換部材70よりも内側で実装基板20との間にLEDチップ10を囲む形で配設されたドーム状の光学部材60と、光学部材60の内側でLEDチップ10を封止した封止部50とを備え、色変換部材70と光学部材60との間に空気層80が形成されているので、LEDチップ10から放射され色変換部材70中の蛍光体粒子により散乱された光のうち光学部材60側へ散乱されて光学部材60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率の向上による光出力の向上を図れる。   In the light emitting device 1 of the present embodiment, the dome-shaped optical member 60 disposed so as to surround the LED chip 10 between the mounting substrate 20 and the inner side of the color conversion member 70, and the inner side of the optical member 60. And the sealing portion 50 that seals the LED chip 10, and the air layer 80 is formed between the color conversion member 70 and the optical member 60. Of the light scattered by the phosphor particles, the amount of light scattered to the optical member 60 side and transmitted through the optical member 60 can be reduced, and the light output can be improved by improving the light extraction efficiency to the outside as the entire apparatus. .

(実施形態2)
本実施形態の発光装置1の基本構成は実施形態1と略同じであり、図8に示すように、実装基板20が、セラミック基板(例えば、アルミナ基板、窒化アルミニウム基板などの電気絶縁性を有し且つ熱伝導率の高いセラミック基板)からなる絶縁性基板20aを用いて形成されている(要するに、実装基板20が熱伝導性材料により形成されている)点などが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 8, the mounting substrate 20 has an electrical insulating property such as a ceramic substrate (for example, an alumina substrate or an aluminum nitride substrate). However, it is different in that it is formed using an insulating substrate 20a made of a ceramic substrate having a high thermal conductivity (in short, the mounting substrate 20 is formed of a thermally conductive material). In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態における実装基板20は、LEDチップ10の各電極とそれぞれ電気的に接続される2つの導体パターン23,23が絶縁性基板20aの一表面と側面と他表面とに跨って形成されて、絶縁性基板20の他表面側に形成された部位が外部接続用電極部23b,23bを構成しており、絶縁性基板20の上記他表面の中央部にLEDチップ10よりも平面サイズの大きな矩形状の放熱用導体部126が形成されている。ここで、本実施形態の発光装置1は、絶縁性基板20aの上記一表面側において一方の導体パターン23上にLEDチップ10を搭載してあるが、実施形態1にて説明したサブマウント部材30を介して導体パターン23上に搭載するようにしてもよい。また、導体パターン23,23を絶縁性基板20aの上記一表面側のみに設けて各導体パターン23,23それぞれの一部を外部接続用電極部23b,23bとしてもよい。   In the present embodiment, the mounting substrate 20 has two conductor patterns 23 and 23 electrically connected to the respective electrodes of the LED chip 10 so as to straddle one surface, the side surface, and the other surface of the insulating substrate 20a. The portions formed on the other surface side of the insulating substrate 20 constitute external connection electrode portions 23b and 23b, and the planar size is larger than that of the LED chip 10 at the central portion of the other surface of the insulating substrate 20. A rectangular heat-dissipating conductor 126 is formed. Here, in the light emitting device 1 of the present embodiment, the LED chip 10 is mounted on the one conductor pattern 23 on the one surface side of the insulating substrate 20a, but the submount member 30 described in the first embodiment. You may make it mount on the conductor pattern 23 via. Alternatively, the conductor patterns 23 and 23 may be provided only on the one surface side of the insulating substrate 20a, and a part of each of the conductor patterns 23 and 23 may be used as external connection electrode portions 23b and 23b.

本実施形態の発光装置1では、実施形態1と同様、色変換部材70は、上記母材とは屈折率の異なる光拡散材73をLEDチップ10の配向特性に基づく相対入射光強度が規定値を超える規定領域のみに分散させてあるので、光拡散材73の量を低減でき且つ色変換部材70の局所的な発熱を抑制することが可能になって蛍光体粒子の光変換効率を向上させることが可能となるとともに色変換部材70の信頼性低下を防止することが可能になる。   In the light emitting device 1 of the present embodiment, as in the first embodiment, the color conversion member 70 uses a light diffusing material 73 having a refractive index different from that of the base material and the relative incident light intensity based on the orientation characteristics of the LED chip 10 is a specified value. The amount of the light diffusing material 73 can be reduced and local heat generation of the color conversion member 70 can be suppressed, and the light conversion efficiency of the phosphor particles can be improved. This makes it possible to prevent a decrease in the reliability of the color conversion member 70.

また、実施形態1では実装基板20が熱伝導性材料からなる伝熱板21と、有機系の絶縁性基材22aを用いた配線基板22とで構成されており、色変換部材70で発生した熱が実装基板20へ伝熱されにくくなっているが、本実施形態の発光装置1は、実装基板20が熱伝導性材料からなる絶縁性基板20aを用いて形成されているので、色変換部材70で発生した熱を実装基板20を通して効率良く放熱させることが可能となり、色変換部材70の局所的な発熱をより抑制することが可能となる。   Further, in the first embodiment, the mounting substrate 20 includes the heat transfer plate 21 made of a heat conductive material and the wiring substrate 22 using the organic insulating base material 22a, and is generated in the color conversion member 70. Although it is difficult for heat to be transferred to the mounting substrate 20, the light emitting device 1 of the present embodiment is formed by using the insulating substrate 20 a made of a heat conductive material in the light emitting device 1. The heat generated in 70 can be efficiently radiated through the mounting substrate 20, and the local heat generation of the color conversion member 70 can be further suppressed.

なお、上述の各実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、結晶成長用基板としてSiC基板を採用しているが、SiC基板の代わりにGaN基板やサファイア基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、上述のLEDチップ10は、上記一表面側に上記アノード電極が形成され、上記他表面側にカソード電極が形成されているが、上記一表面側にアノード電極およびカソード電極が形成されていてもよく、この場合には、アノード電極およびカソード電極の両方ともボンディングワイヤ14を介して導体パターン23,23と直接接続することができる。また、LEDチップ10から放射される光は青色光に限らず、例えば、赤色光、緑色光、紫色光、紫外光などでもよい。   In each of the above-described embodiments, a blue LED chip whose emission color is blue is used as the LED chip 10, and a SiC substrate is used as the crystal growth substrate. However, instead of the SiC substrate, a GaN substrate or A sapphire substrate may be used. When a SiC substrate or a GaN substrate is used, the crystal growth substrate has a higher thermal conductivity than the case where a sapphire substrate that is an insulator is used as the crystal growth substrate. The thermal resistance of the growth substrate can be reduced. The LED chip 10 has the anode electrode formed on the one surface side and the cathode electrode formed on the other surface side. The anode electrode and the cathode electrode are formed on the one surface side. In this case, both the anode electrode and the cathode electrode can be directly connected to the conductor patterns 23 and 23 via the bonding wires 14. Moreover, the light radiated | emitted from LED chip 10 is not restricted to blue light, For example, red light, green light, purple light, ultraviolet light etc. may be sufficient.

実施形態1の発光装置の概略断面図である。1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. 同上の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device same as the above. 同上の発光装置の要部概略平面図である。It is a principal part schematic plan view of a light-emitting device same as the above. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 同上の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device same as the above. 同上の発光装置を用いた照明器具の要部概略斜視図である。It is a principal part schematic perspective view of the lighting fixture using the light-emitting device same as the above. 同上の他の構成例の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device of the other structural example same as the above. 実施形態2の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 従来例の発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device of a prior art example.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 伝熱板
22 配線基板
23 導体パターン
23b 外部接続用電極部
30 サブマウント部材
50 封止部
60 光学部材
70 色変換部材
70a 光入射面
70b 光出射面
73 光拡散材
80 空気層
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 14 Bonding wire 20 Mounting board 21 Heat-transfer board 22 Wiring board 23 Conductor pattern 23b External connection electrode part 30 Submount member 50 Sealing part 60 Optical member 70 Color conversion member 70a Light incident surface 70b Light emission Surface 73 Light diffusing material 80 Air layer

Claims (6)

LEDチップと、当該LEDチップが実装された実装基板と、LEDチップから放射される光によって励起されてLEDチップよりも長波長の可視光を放射する蛍光体粒子が透光性材料からなる母材に分散されてなり実装基板との間にLEDチップを囲む形で配設されたドーム状の色変換部材とを備え、色変換部材は、前記母材とは屈折率の異なる光拡散材をLEDチップの配向特性に基づく相対入射光強度が規定値を超える規定領域のみに分散させてなることを特徴とする発光装置。   An LED chip, a mounting substrate on which the LED chip is mounted, and a base material made of a light-transmitting material, phosphor particles that are excited by light emitted from the LED chip and emit visible light having a longer wavelength than the LED chip And a dome-shaped color conversion member disposed so as to surround the LED chip with the mounting substrate, and the color conversion member includes a light diffusion material having a refractive index different from that of the base material. A light emitting device characterized in that it is dispersed only in a prescribed region where the relative incident light intensity based on the orientation characteristics of the chip exceeds a prescribed value. 前記母材は、ガラスであることを特徴とする請求項1記載の発光装置。   The light emitting device according to claim 1, wherein the base material is glass. 前記光拡散材は、ガラス繊維からなることを特徴とする請求項1または請求項2記載の発光装置。   The light-emitting device according to claim 1, wherein the light diffusing material is made of glass fiber. 前記光拡散材は、金属ナノ粒子からなることを特徴とする請求項1または請求項2記載の発光装置。   The light-emitting device according to claim 1, wherein the light diffusing material is made of metal nanoparticles. 前記実装基板は、熱伝導性材料により形成されてなることを特徴とする請求項1ないし請求項4のいずれか1項に記載の発光装置。   The light-emitting device according to claim 1, wherein the mounting substrate is made of a heat conductive material. 前記色変換部材よりも内側で前記実装基板との間に前記LEDチップを囲む形で配設されたドーム状の光学部材と、光学部材の内側で前記LEDチップを封止した封止部とを備え、前記色変換部材と光学部材との間に空気層が形成されてなることを特徴とする請求項1ないし請求項5のいずれか1項に記載に発光装置。   A dome-shaped optical member disposed so as to surround the LED chip between the color conversion member and the mounting substrate; and a sealing portion that seals the LED chip inside the optical member. The light emitting device according to claim 1, further comprising an air layer formed between the color conversion member and the optical member.
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