JP2007165937A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2007165937A
JP2007165937A JP2007062213A JP2007062213A JP2007165937A JP 2007165937 A JP2007165937 A JP 2007165937A JP 2007062213 A JP2007062213 A JP 2007062213A JP 2007062213 A JP2007062213 A JP 2007062213A JP 2007165937 A JP2007165937 A JP 2007165937A
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led chip
light
emitting device
light emitting
conductive plate
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Yoji Urano
洋二 浦野
Takuya Nakatani
卓也 中谷
Yasuhiro Hidaka
康博 日高
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of suppressing temperature rise of an LED chip and realizing high output of optical output. <P>SOLUTION: The device is provided with an LED chip 10; a chip mounting member 70 having a conductive plate (heat transmitting plate) 71 having the LED chip 10 mounted on one surface side, and conductor patterns 73, 73 provided on the one surface side of the conductive plate 71 via an insulating portion 72 and electrically connected to the LED chip 10; and a sheet-like jointing member 80, arranged on the other surface side of the conductive plate 71 to joint the conductive plate 71 to a tool body 90 as a metal member for holding the chip-mounting member 70. A resin sheet, containing a filling material made of a filler and having low viscosity, when heated as the jointing member 80, and the jointing member 80 has electric insulation and a function of making the conductive plate 71 thermally couple with the tool body 90. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光装置に関するものである。   The present invention relates to a light emitting device.

従来から、LEDチップとLEDチップから放射された光によって励起されてLEDチップとは異なる発光色の光を放射する波長変換材料としての蛍光体(蛍光顔料、蛍光染料など)とを組み合わせてLEDチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている。この種の発光装置としては、例えば、青色光あるいは紫外光を放射するLEDチップと蛍光体とを組み合わせて白色の光(白色光の発光スペクトル)を得る白色発光装置(一般的に白色LEDと呼ばれている)の商品化がなされている。   Conventionally, LED chips are combined with LED chips and phosphors (fluorescent pigments, fluorescent dyes, etc.) as wavelength conversion materials that are excited by light emitted from the LED chips and emit light of a different emission color from the LED chips. Research and development of light-emitting devices that emit light of a color different from the color of the light is being conducted in various places. As this type of light-emitting device, for example, a white light-emitting device (generally called a white LED) that obtains white light (white light emission spectrum) by combining an LED chip that emits blue light or ultraviolet light and a phosphor. Has been commercialized.

また、最近の白色LEDの高出力化に伴い、白色LEDを照明用途に展開する研究開発が盛んになってきているが、上述の白色LEDを一般照明などのように比較的大きな光出力を必要とする用途に用いる場合、1つの白色LEDでは所望の光出力を得ることができないので、複数個の白色LEDを1枚の回路基板上に搭載したLEDユニット(発光装置)を構成し、LEDユニット全体で所望の光出力を確保するようにしているのが一般的である(例えば、特許文献1)。   In addition, with the recent increase in output of white LEDs, research and development for expanding white LEDs into lighting applications has become active, but the above-mentioned white LEDs require a relatively large light output, such as general lighting. When a single white LED cannot be used to obtain a desired light output, an LED unit (light emitting device) in which a plurality of white LEDs are mounted on a single circuit board is formed. Generally, a desired light output is ensured as a whole (for example, Patent Document 1).

また、従来から、LEDチップとLEDチップを実装する回路基板とを備える発光装置において、LEDチップのジャンクション温度の上昇を抑制して入力電力を大きくすることで光出力の高出力化を図るために、LEDチップの発光部で発生した熱を効率良く外部に放熱させるための構造が提案されている(例えば、特許文献2参照)。   Conventionally, in a light emitting device including an LED chip and a circuit board on which the LED chip is mounted, in order to increase the light output by suppressing the increase in the junction temperature of the LED chip and increasing the input power. A structure for efficiently radiating the heat generated in the light emitting part of the LED chip to the outside has been proposed (for example, see Patent Document 2).

上記特許文献2に開示された発光装置では、図12に示すように、LEDチップ10’を実装する回路基板200として、金属板201上に絶縁樹脂層202を介して導体パターン203が形成された金属基板を採用しており、各LEDチップ10’で発生した熱が熱伝達部材210を介して金属板201に伝熱されるようになっている。ここにおいて、各LEDチップ10’は、GaN系化合物半導体材料からなる発光部が絶縁体であるサファイア基板からなる結晶成長用基板の一表面側に形成されたGaN系青色LEDチップであり、回路基板200にフリップチップ実装されており、結晶成長用基板の他表面が光取り出し面となっている。
特開2003−59332号公報 特開2003−168829号公報(段落〔0030〕、および図6)
In the light emitting device disclosed in Patent Document 2, a conductive pattern 203 is formed on a metal plate 201 via an insulating resin layer 202 as a circuit board 200 on which the LED chip 10 ′ is mounted, as shown in FIG. A metal substrate is used, and heat generated in each LED chip 10 ′ is transferred to the metal plate 201 via the heat transfer member 210. Here, each LED chip 10 ′ is a GaN-based blue LED chip formed on one surface side of a crystal growth substrate made of a sapphire substrate whose light-emitting portion made of a GaN-based compound semiconductor material is an insulator, and a circuit board The other surface of the crystal growth substrate is a light extraction surface.
JP 2003-59332 A JP 2003-168829 A (paragraph [0030] and FIG. 6)

ところで、図12に示した構成の発光装置を照明器具に用いる場合、LEDチップ10’が搭載されている回路基板200を保持する器具本体を金属製として、発光装置の回路基板200における金属板201を器具本体に熱的に結合させることで発光装置の熱をより効率的に放熱させることが考えられるが、耐雷サージ性を確保するために、器具本体と回路基板200の金属板201との間にシート状の絶縁層として例えばサーコン(登録商標)のようなゴムシート状の放熱シートを介在させる必要があり、各LEDチップ10’の発光部から発光装置を保持する金属製の部材である器具本体までの熱抵抗が大きくなってしまい、各LEDチップ10’のジャンクション温度が最大ジャンクション温度を超えないように各LEDチップ10’への入力電力を制限する必要があり、光出力の高出力化が難しかった。   By the way, when the light emitting device having the configuration shown in FIG. 12 is used for a lighting fixture, the fixture main body holding the circuit board 200 on which the LED chip 10 ′ is mounted is made of metal, and the metal plate 201 in the circuit board 200 of the light emitting device. It is conceivable that the heat of the light-emitting device is more efficiently dissipated by thermally coupling the light source to the tool body, but in order to ensure lightning surge resistance, between the tool body and the metal plate 201 of the circuit board 200 It is necessary to interpose a rubber sheet-like heat-dissipating sheet such as Sarcon (registered trademark) as a sheet-like insulating layer, and an instrument that is a metal member that holds the light-emitting device from the light-emitting portion of each LED chip 10 ′ Each LED chip 10 is prevented so that the thermal resistance to the main body is increased and the junction temperature of each LED chip 10 'does not exceed the maximum junction temperature. Must limit the input power to the high power of the optical output is difficult.

また、金属板201と器具本体との間に上述の放熱シートを介在させた場合には、金属板201と放熱シートとの密着不足により、両者の間に空隙が発生して熱抵抗が増大したり、発光装置ごとに器具本体までの熱抵抗がばらついていた。   In addition, when the above-described heat dissipation sheet is interposed between the metal plate 201 and the instrument main body, due to insufficient adhesion between the metal plate 201 and the heat dissipation sheet, a gap is generated between the two and the thermal resistance increases. In addition, the thermal resistance to the instrument body varied for each light emitting device.

また、上記特許文献2に開示された発光装置では、LEDチップ10’の発光部で発生した熱をLEDチップ10’のサイズよりも小さな熱伝達部材210を介して金属板201へ伝熱させるのでLEDチップ10’から金属板201までの熱抵抗が比較的大きく、結晶成長用基板であるサファイア基板を金属板201に熱結合させるように実装した場合には、サファイア基板の熱抵抗が大きくなってしまうという不具合もあった。   In the light emitting device disclosed in Patent Document 2, heat generated in the light emitting portion of the LED chip 10 ′ is transferred to the metal plate 201 via the heat transfer member 210 smaller than the size of the LED chip 10 ′. The thermal resistance from the LED chip 10 ′ to the metal plate 201 is relatively large, and when the sapphire substrate that is a crystal growth substrate is mounted so as to be thermally coupled to the metal plate 201, the thermal resistance of the sapphire substrate becomes large. There was also a problem that it ended up.

本発明は上記事由に鑑みて為されたものであり、その目的は、LEDチップの温度上昇を抑制でき光出力の高出力化を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of suppressing an increase in the temperature of an LED chip and increasing the light output.

請求項1の発明は、LEDチップと、LEDチップが一面側に搭載される熱伝導性材料からなる伝熱板および当該伝熱板の前記一面側に絶縁部を介して設けられLEDチップと電気的に接続される導体パターンを有するチップ搭載部材と、チップ搭載部材を保持する金属部材に対して伝熱板を接合するために伝熱板の他面側に配設されてなり電気絶縁性を有し且つ伝熱板と金属部材とを熱結合させるシート状の接合用部材とを備えることを特徴とする。   According to the first aspect of the present invention, an LED chip, a heat transfer plate made of a heat conductive material on which the LED chip is mounted on one surface side, and an LED chip and an electric circuit provided on the one surface side of the heat transfer plate via an insulating portion. In order to join the heat transfer plate to the chip mounting member having a conductive pattern to be connected to the metal and the metal member holding the chip mounting member, electrical insulation is provided on the other surface side of the heat transfer plate. And a sheet-like joining member that thermally couples the heat transfer plate and the metal member.

この発明によれば、チップ搭載部材を保持する金属部材に対して伝熱板を接合するために伝熱板の他面側に配設されてなり電気絶縁性を有し且つ伝熱板と金属部材とを熱結合させるシート状の接合用部材を備えているので、ゴムシート状の放熱シートを金属部材との間に介在させる形で配置する場合に比べて、LEDチップの発光部からチップ搭載部材を保持する金属部材までの熱抵抗を小さくできて放熱性が向上するとともに熱抵抗のばらつきを低減でき、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。また、従来と同じ光出力で使用する場合には従来に比べてLEDチップのジャンクション温度を低減できてLEDチップの寿命が長くなるという利点がある。   According to this invention, in order to join the heat transfer plate to the metal member holding the chip mounting member, the heat transfer plate is disposed on the other surface side of the heat transfer plate and has an electrical insulation property. Since it has a sheet-like joining member that thermally couples the member, it is mounted on the chip from the light emitting part of the LED chip compared to the case where a rubber sheet-like heat dissipation sheet is interposed between the metal member The heat resistance up to the metal member holding the member can be reduced, heat dissipation can be improved, variation in thermal resistance can be reduced, and the temperature rise of the junction temperature of the LED chip can be suppressed, so that the input power can be increased and the light output can be increased. High output can be achieved. Further, when used with the same light output as before, there is an advantage that the junction temperature of the LED chip can be reduced and the life of the LED chip is prolonged as compared with the conventional one.

請求項2の発明は、請求項1の発明において、前記LEDチップは、SiC基板もしくはGaN基板からなる導電性基板の主表面側にGaN系化合物半導体材料により形成された発光部を備えたものであることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the LED chip includes a light emitting portion formed of a GaN-based compound semiconductor material on a main surface side of a conductive substrate made of a SiC substrate or a GaN substrate. It is characterized by being.

この発明によれば、前記LEDチップの結晶成長用基板の格子定数をGaN系化合物半導体材料の格子定数に近づけることができ、且つ、結晶成長用基板が導電性を有するので結晶成長用基板への電極の形成が可能になる。また、結晶成長用基板としてサファイア基板を用いる場合に比べて結晶成長用基板の伝熱性が良く、結晶成長用基板の熱抵抗を低減することができるので、放熱性が向上する。   According to the present invention, the lattice constant of the crystal growth substrate of the LED chip can be brought close to the lattice constant of the GaN-based compound semiconductor material, and the crystal growth substrate has conductivity. An electrode can be formed. In addition, the heat transfer property of the crystal growth substrate is better than when a sapphire substrate is used as the crystal growth substrate, and the thermal resistance of the crystal growth substrate can be reduced, so that heat dissipation is improved.

請求項3の発明は、請求項1または請求項2の発明において、前記LEDチップのチップサイズよりも大きく且つ前記LEDチップと前記伝熱板との間に介在して両者の線膨張率の差に起因して前記LEDチップに働く応力を緩和するサブマウント部材を備えることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the difference in linear expansion coefficient between the LED chip and the heat transfer plate is larger than the chip size of the LED chip and interposed between the LED chip and the heat transfer plate. And a submount member that relieves stress acting on the LED chip due to the above.

この発明によれば、前記LEDチップの前記導電性基板と前記伝熱板との線膨張率の差に起因して前記LEDチップが破損するのを防止することができ、信頼性を高めることができる。   According to the present invention, it is possible to prevent the LED chip from being damaged due to a difference in linear expansion coefficient between the conductive substrate of the LED chip and the heat transfer plate, thereby improving reliability. it can.

請求項4の発明は、請求項1ないし請求項3の発明において、前記接合用部材は、フィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シートからなることを特徴とする。   A fourth aspect of the present invention is characterized in that, in the first to third aspects of the present invention, the joining member is made of a resin sheet containing a filler made of a filler and having a low viscosity when heated.

この発明によれば、前記チップ搭載部材と前記接合用部材との密着不足により前記チップ搭載部材と前記接合用部材との間に空隙が発生して熱抵抗が増大したり、前記接合用部材の経年変化により前記チップ搭載部材と前記接合用部材との間に間隙が発生して熱抵抗が増大するのを防止することができる。   According to the present invention, a gap is generated between the chip mounting member and the bonding member due to insufficient adhesion between the chip mounting member and the bonding member, and thermal resistance is increased. It is possible to prevent a thermal resistance from increasing due to a gap between the chip mounting member and the joining member due to aging.

請求項5の発明は、請求項1ないし請求項4の発明において、前記接合用部材は、前記伝熱板よりも平面サイズが大きく設定されてなることを特徴とする。   A fifth aspect of the present invention is characterized in that, in the first to fourth aspects of the present invention, the joining member is set to have a larger planar size than the heat transfer plate.

この発明によれば、前記接合用部材と前記伝熱板とが同じ平面サイズに形成されている場合に比べて、前記伝熱板と前記金属部材との間の沿面距離を長くすることができ、照明器具用の光源として用いる場合の耐雷サージ性を高めることができる。   According to this invention, the creeping distance between the heat transfer plate and the metal member can be increased compared to the case where the joining member and the heat transfer plate are formed in the same plane size. The lightning surge resistance when used as a light source for lighting equipment can be enhanced.

請求項1の発明では、LEDチップの発光部からチップ搭載部材を保持する金属部材までの熱抵抗を小さくできて放熱性が向上するとともに熱抵抗のばらつきを低減でき、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れるという効果がある。   In the invention of claim 1, the thermal resistance from the light emitting part of the LED chip to the metal member holding the chip mounting member can be reduced, the heat dissipation can be improved and the variation in thermal resistance can be reduced, and the temperature of the junction temperature of the LED chip. Since the increase can be suppressed, the input power can be increased and the optical output can be increased.

(実施形態1)
以下、本実施形態の発光装置について図1〜図4を参照しながら説明する。
(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置(LEDチップユニット)1は、照明器具の光源として用いるものであり、矩形板状のLEDチップ10と、LEDチップ10のチップサイズよりも大きな矩形板状に形成されLEDチップ10が一面側に搭載される矩形板状の導電性プレート71および当該導電性プレート71の上記一面側に絶縁部72を介して設けられLEDチップ10と電気的に接続される導体パターン(リードパターン)73,73を有するチップ搭載部材70と、導電性プレート71とLEDチップ10との間に介在して両者の線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30と、チップ搭載部材70の一表面側においてLEDチップ10を囲むように配置されLEDチップ10の側面から放射された光をLEDチップ10の前方(図1における上方)へ反射させるリフレクタ(反射器)50と、LEDチップ10を覆う形でリフレクタ50の前面側に取り付けられる保護カバー60と、チップ搭載部材70を保持する金属製の器具本体90に対して導電性プレート71を接合するために導電性プレート71の他面側に配設されてなり電気絶縁性を有し且つ導電性プレート71と器具本体90とを熱結合させるシート状の接合用部材80とを備えている。なお、本実施形態では、器具本体90がチップ搭載部材70を保持する金属部材を構成しているが、チップ搭載部材70を保持する金属部材は器具本体90以外でもよい。また、金属部材の材料としては、Al、Cuなどの熱伝導率の高い材料を採用すればよい。また、本実施形態では、チップ搭載部材70とリフレクタ50と保護カバー60とでLEDチップ10のパッケージを構成している。また、本実施形態では、導電性プレート71が、LEDチップ10が一表面側に搭載される熱伝導性材料からなる伝熱板を構成している。   A light emitting device (LED chip unit) 1 according to this embodiment is used as a light source of a lighting fixture, and is formed into a rectangular plate-shaped LED chip 10 and a rectangular plate shape larger than the chip size of the LED chip 10. 10 is a rectangular plate-like conductive plate 71 mounted on one surface side, and a conductor pattern (lead pattern) provided on the one surface side of the conductive plate 71 via an insulating portion 72 and electrically connected to the LED chip 10. ) 73 and 73, and a submount member that is interposed between the conductive plate 71 and the LED chip 10 to relieve the stress acting on the LED chip 10 due to the difference in linear expansion coefficient between them. 30 and light emitted from the side surface of the LED chip 10 which is disposed so as to surround the LED chip 10 on one surface side of the chip mounting member 70 A reflector 50 that reflects the LED chip 10 forward (upward in FIG. 1), a protective cover 60 that is attached to the front surface of the reflector 50 so as to cover the LED chip 10, and a metal that holds the chip mounting member 70 In order to join the conductive plate 71 to the manufactured instrument main body 90, the conductive plate 71 is disposed on the other surface side of the conductive plate 71 and has electrical insulation, and the conductive plate 71 and the instrument main body 90 are thermally coupled. And a sheet-like joining member 80 to be provided. In this embodiment, the instrument main body 90 constitutes a metal member that holds the chip mounting member 70, but the metal member that holds the chip mounting member 70 may be other than the instrument main body 90. Moreover, what is necessary is just to employ | adopt materials with high heat conductivity, such as Al and Cu, as a material of a metal member. In the present embodiment, the chip mounting member 70, the reflector 50, and the protective cover 60 constitute a package of the LED chip 10. Further, in the present embodiment, the conductive plate 71 constitutes a heat transfer plate made of a heat conductive material on which the LED chip 10 is mounted on one surface side.

本実施形態における照明器具は、例えばスポットライトとして用いられるものであり、支持台100上に固定された回転基台110に一端部が軸ねじ111を用いて結合されたアーム112に対して器具本体90が結合ねじ113を用いて結合されている。   The lighting fixture in the present embodiment is used as, for example, a spotlight, and the fixture main body with respect to an arm 112 whose one end is coupled to a rotary base 110 fixed on the support base 100 using a shaft screw 111. 90 are coupled using a coupling screw 113.

また、本実施形態における照明器具は、図3および図4に示すように、器具本体90の形状を一面が開口した有底筒状の形状としてあり、器具本体90内に複数個の発光装置1が収納されている。ここで、本実施形態における照明器具は、器具本体90の底壁90aに各発光装置1が接合用部材80を介して実装され、器具本体90の開口部分が前カバー91により閉塞されている。前カバー91は、円板状のガラス板からなる透光板91aと、透光板91aを保持する円環状の窓枠91bとからなり、窓枠91bが器具本体90に対して取り付けられている。なお、透光板91aは、ガラス基板に限らず、透光性を有する材料により形成されていればよく、また、透光板91aに各発光装置1から放射された光の配光を制御するレンズを一体に設けてもよい。   In addition, as shown in FIGS. 3 and 4, the lighting fixture in the present embodiment has a bottomed cylindrical shape in which the entire surface of the fixture main body 90 is open, and a plurality of light emitting devices 1 are provided in the fixture main body 90. Is stored. Here, in the lighting fixture in the present embodiment, each light emitting device 1 is mounted on the bottom wall 90 a of the fixture body 90 via the joining member 80, and the opening portion of the fixture body 90 is closed by the front cover 91. The front cover 91 includes a translucent plate 91 a made of a disk-shaped glass plate and an annular window frame 91 b that holds the translucent plate 91 a, and the window frame 91 b is attached to the instrument main body 90. . The translucent plate 91a is not limited to a glass substrate, but may be formed of a translucent material, and controls the light distribution of light emitted from each light emitting device 1 to the translucent plate 91a. You may provide a lens integrally.

器具本体90内に収納された複数個の発光装置1は、複数のリード線93(図1および図3参照)により直列接続されており、複数個の発光装置1の直列回路の両端のリード線93が器具本体90の底壁90aに貫設された挿通孔90cに挿通され、図示しない電源回路から電力が供給されるようになっている。なお、電源回路としては、例えば、商用電源のような交流電源の交流出力を整流平滑するダイオードブリッジからなる整流回路と、整流回路の出力を平滑する平滑コンデンサとを備えた構成のものを採用すればよい。また、本実施形態では、器具本体90内の複数個の発光装置1を直列接続しているが、複数個の発光装置1の接続関係は特に限定するものではなく、例えば、並列接続するようにしてもよいし、直列接続と並列接続とを組み合わせてもよい。   The plurality of light emitting devices 1 housed in the instrument body 90 are connected in series by a plurality of lead wires 93 (see FIGS. 1 and 3), and lead wires at both ends of the series circuit of the plurality of light emitting devices 1. 93 is inserted into an insertion hole 90c provided in the bottom wall 90a of the instrument body 90, and power is supplied from a power supply circuit (not shown). As the power supply circuit, for example, a power supply circuit having a rectifier circuit composed of a diode bridge that rectifies and smoothes the AC output of an AC power supply such as a commercial power supply and a smoothing capacitor that smoothes the output of the rectifier circuit is employed. That's fine. In the present embodiment, the plurality of light emitting devices 1 in the instrument main body 90 are connected in series. However, the connection relationship between the plurality of light emitting devices 1 is not particularly limited. For example, the light emitting devices 1 are connected in parallel. Alternatively, a series connection and a parallel connection may be combined.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light emitting portion 12 formed of a GaN-based compound semiconductor material and having, for example, a double hetero structure is formed on the main surface side of the conductive substrate 11 by an epitaxial growth method (for example, MOVPE method). ), A cathode electrode (n electrode) (not shown) is formed on the back surface of the conductive substrate 11, and an anode electrode (p electrode) (not shown) is formed on the surface of the light emitting portion 12 (the outermost surface on the main surface side of the conductive substrate 11). ) Is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed.

ここにおいて、LEDチップ10は、アノード電極がボンディングワイヤ14(図1における左側のボンディングワイヤ14)を介してチップ搭載部材70の一方の導体パターン73の一端部(インナリード部)に電気的に接続され、カソード電極がサブマント部材30およびボンディングワイヤ14(図1における右側のボンディングワイヤ14)を介してチップ搭載部材70の他方の導体パターン73の一端部(インナリード部)に電気的に接続され、各導体パターン73の他端部がそれぞれリード線93に半田からなる接合部95を介して電気的に接続されている。   Here, in the LED chip 10, the anode electrode is electrically connected to one end portion (inner lead portion) of one conductor pattern 73 of the chip mounting member 70 via the bonding wire 14 (the bonding wire 14 on the left side in FIG. 1). The cathode electrode is electrically connected to one end portion (inner lead portion) of the other conductor pattern 73 of the chip mounting member 70 via the submant member 30 and the bonding wire 14 (the bonding wire 14 on the right side in FIG. 1). The other end portion of each conductor pattern 73 is electrically connected to the lead wire 93 via a joint portion 95 made of solder.

チップ搭載部材70は、導電性プレート71の材料として、例えば、Cu、リン青銅などの導電性を有し熱伝導率が比較的高い材料を採用すればよく、導体パターン73,73の材料として、例えば、Cuを採用すればよい。また、チップ搭載部材70の絶縁部72の材料としては、例えば、FR4のようなガラスエポキシ樹脂、ポリイミド系樹脂、フェノール樹脂などの絶縁性を有する樹脂を採用すればよい。ここにおいて、チップ搭載部材70は、絶縁部72の中央部に導電性プレート71の一面の一部を露出させる窓孔75が形成されており、LEDチップ10が窓孔75の内側に配置されたサブマウント部材30を介して導電性プレート71に搭載されている。なお、導電性プレート71は、リードフレームと同様の厚みを有していればよいから、厚み寸法を上記特許文献1,2に開示された発光装置における回路基板の厚み寸法に比べて小さくすることができる。   As the material of the conductive plate 71, the chip mounting member 70 may be a conductive material having a relatively high thermal conductivity, such as Cu or phosphor bronze. For example, Cu may be adopted. Further, as a material of the insulating portion 72 of the chip mounting member 70, for example, a glass epoxy resin such as FR4, a polyimide resin, a resin having an insulating property such as a phenol resin may be employed. Here, in the chip mounting member 70, a window hole 75 exposing a part of one surface of the conductive plate 71 is formed in the central part of the insulating part 72, and the LED chip 10 is disposed inside the window hole 75. It is mounted on the conductive plate 71 via the submount member 30. Since the conductive plate 71 has only to have the same thickness as the lead frame, the thickness dimension should be smaller than the thickness dimension of the circuit board in the light emitting device disclosed in Patent Documents 1 and 2 above. Can do.

なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも導電性プレート71から離れた側となるように導電性プレート71に搭載されているが、LEDチップ10の発光部12が導電性基板11よりも導電性プレート71に近い側となるように導電性プレート71に搭載するようにしてもよい。光取り出し効率を考えた場合には、発光部12を導電性プレート71から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を導電性プレート71に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   In this embodiment, the LED chip 10 is mounted on the conductive plate 71 so that the light emitting part 12 of the LED chip 10 is farther from the conductive plate 71 than the conductive substrate 11. The conductive plate 71 may be mounted so that 12 is closer to the conductive plate 71 than the conductive substrate 11. Considering the light extraction efficiency, it is desirable to arrange the light emitting part 12 on the side away from the conductive plate 71. However, in this embodiment, the conductive substrate 11 and the light emitting part 12 have the same refractive index. Therefore, even if the light emitting unit 12 is arranged on the side close to the conductive plate 71, the light extraction loss does not become too large.

また、リフレクタ50は、円形状に開口した枠状の形状であって、LEDチップ10の厚み方向においてLEDチップ10から離れるに従って開口面積が大きくなる形状に形成されており、絶縁性を有するシート状の接着フィルムからなる固着材55によりチップ搭載部材70と固着されている。   In addition, the reflector 50 has a circular frame-like shape and is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10, and has a sheet shape having an insulating property. The chip mounting member 70 is fixed by a fixing material 55 made of an adhesive film.

リフレクタ50の材料としては、LEDチップ10から放射される光(ここでは、青色光)に対する反射率が比較的大きな材料(例えば、Alなど)を採用すればよい。なお、固着材55には、リフレクタ50の開口部に対応する円形状の開口部55aが形成されている。また、リフレクタ50の内側には、LEDチップ10を封止する透明な封止樹脂(例えば、シリコーン樹脂など)をポッティングすることが望ましい。   As a material of the reflector 50, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) may be used. Note that a circular opening 55 a corresponding to the opening of the reflector 50 is formed in the fixing material 55. Moreover, it is desirable to pot a transparent sealing resin (for example, silicone resin) for sealing the LED chip 10 inside the reflector 50.

保護カバー60は、LEDチップ10の厚み方向に沿った中心線上に中心が位置するように配置されるドーム状のカバー部62と、カバー部62の開口部の周縁から側方に連続一体に突出したフランジ部61とを備え、フランジ部61におけるリフレクタ50側の面の周部に環状の位置決めリブ61aが突設されており、リフレクタ50に対して安定して位置決めすることができるようになっている。なお、保護カバー60は、リフレクタ50に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   The protective cover 60 has a dome-shaped cover portion 62 disposed so that its center is located on the center line along the thickness direction of the LED chip 10, and continuously protrudes sideways from the periphery of the opening of the cover portion 62. An annular positioning rib 61a is projected from the peripheral portion of the surface of the flange portion 61 on the reflector 50 side so that the flange portion 61 can be stably positioned with respect to the reflector 50. Yes. Note that the protective cover 60 may be bonded to the reflector 50 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like).

また、保護カバー60は、シリコーンのような透光性材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、保護カバー60が、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を発光する色変換部を兼ねており、当該発光装置1全体として、LEDチップ10から放射された青色光と黄色蛍光体から放射された光との合成光からなる白色の光を出力する白色LEDを構成している。なお、保護カバー60の材料として用いる透光性材料は、シリコーンに限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、保護カバー60の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。また、LEDチップ10の発光色が発光装置1の所望の発光色と同じ場合には透光性材料に蛍光体を混合する必要はない。   In addition, the protective cover 60 is a mixture of a translucent material such as silicone and a particulate yellow phosphor that emits broad yellow light that is excited by the blue light emitted from the LED chip 10. It is composed of a molded product. Therefore, in the light emitting device 1 of this embodiment, the protective cover 60 is also excited by the light emitted from the LED chip 10 and also serves as a color conversion unit that emits light of a color different from the emission color of the LED chip 10. The light emitting device 1 as a whole constitutes a white LED that outputs white light composed of combined light of blue light emitted from the LED chip 10 and light emitted from the yellow phosphor. The translucent material used as the material of the protective cover 60 is not limited to silicone, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the translucent material used as the material of the protective cover 60 is not limited to the yellow phosphor, and for example, white light can be obtained by mixing a red phosphor and a green phosphor. Further, when the light emission color of the LED chip 10 is the same as the desired light emission color of the light emitting device 1, it is not necessary to mix the phosphor with the translucent material.

ところで、本実施形態では、LEDチップ10として、上述のように発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には下記表1から分かるように、上記特許文献2のように結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く熱抵抗が小さい。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in this embodiment, the blue LED chip whose emission color is blue is adopted as the LED chip 10 as described above, and the SiC substrate is adopted as the conductive substrate 11, but GaN is used instead of the SiC substrate. A substrate may be used. When a SiC substrate or a GaN substrate is used, as can be seen from Table 1 below, when a sapphire substrate that is an insulator is used as a substrate for crystal growth as in Patent Document 2 above. In comparison, the crystal growth substrate has a high thermal conductivity and a low thermal resistance. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

Figure 2007165937
Figure 2007165937

また、LEDチップ10は、上述のように、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と導電性プレート71との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して導電性プレート71に搭載されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を導電性プレート71においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有しており、導電性プレート71におけるLEDチップ10側の表面の面積はLEDチップにおけるチップ搭載部材70側の表面の面積よりも十分に大きいことが望ましい。例えば、0.3〜1.0mm角のLEDチップ10から廃熱を効率良く行うためには、導電性プレート71と接合用部材80との接触面積を大きくし、且つ、LEDチップ10の熱が広範囲に亘って均一に熱伝導するようにして熱抵抗を小さくすることが好ましく、導電性プレート71におけるLEDチップ10側の表面の面積をLEDチップ10における導電性プレート71側の表面の面積の10倍以上とすることが望ましい。ここにおいて、サブマウント部材30は、上記応力を緩和する機能を有していればよく、厚み寸法を上記特許文献1,2に開示された発光装置における回路基板の厚み寸法に比べて小さくすることができるから、熱伝導率が比較的大きな材料を採用することにより、熱抵抗を小さくすることができる。   Further, as described above, the LED chip 10 is formed in a rectangular plate size larger than the chip size of the LED chip 10, and is caused by the difference in linear expansion coefficient between the LED chip 10 and the conductive plate 71. 10 is mounted on the conductive plate 71 through a submount member 30 that relieves stress acting on the substrate 10. The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 in the conductive plate 71. The surface area of the conductive plate 71 on the LED chip 10 side is desirably sufficiently larger than the surface area of the LED chip on the chip mounting member 70 side. For example, in order to efficiently perform waste heat from the 0.3 to 1.0 mm square LED chip 10, the contact area between the conductive plate 71 and the bonding member 80 is increased and the heat of the LED chip 10 is increased. It is preferable to reduce the thermal resistance so as to conduct heat uniformly over a wide range. The surface area of the conductive plate 71 on the LED chip 10 side is 10 times the surface area of the LED chip 10 on the conductive plate 71 side. It is desirable to make it more than twice. Here, the submount member 30 only needs to have a function of relieving the stress, and the thickness dimension is made smaller than the thickness dimension of the circuit board in the light emitting device disclosed in Patent Documents 1 and 2 above. Therefore, the heat resistance can be reduced by adopting a material having a relatively large thermal conductivity.

なお、本実施形態では、サブマウント部材30の材料としてCuWを採用しており、LEDチップ10は、上述のように、アノード電極がボンディングワイヤ14を介して一方の導体パターン73と電気的に接続され、カソード電極がサブマウント部材30およびボンディングワイヤ14を介して他方の導体パターン73と電気的に接続されている。   In this embodiment, CuW is used as the material of the submount member 30, and the LED chip 10 is electrically connected to one conductor pattern 73 via the bonding wire 14 in the LED chip 10 as described above. The cathode electrode is electrically connected to the other conductor pattern 73 via the submount member 30 and the bonding wire 14.

サブマウント部材30の材料はCuWに限らず、例えば下記表2から分かるように、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、W、AlN、複合SiC、Siなどを採用してもよい。ただし、サブマウント部材30としてAlNや複合SiCのような絶縁体を採用する場合には、例えば、サブマウント部材30におけるLEDチップ10側の表面にカソード電極と接合される適宜の電極パターンを設けておき、当該電極パターンと上記他方の導体パターン83とをボンディングワイヤ14を介して電気的に接続すればよい。   The material of the submount member 30 is not limited to CuW. For example, as can be seen from Table 2 below, the material of the submount member 30 is a material whose linear expansion coefficient is relatively close to 6H—SiC which is the material of the conductive substrate 11 and whose thermal conductivity is relatively high. For example, W, AlN, composite SiC, Si, or the like may be employed. However, when an insulator such as AlN or composite SiC is adopted as the submount member 30, for example, an appropriate electrode pattern to be bonded to the cathode electrode is provided on the surface of the submount member 30 on the LED chip 10 side. The electrode pattern and the other conductor pattern 83 may be electrically connected via the bonding wire 14.

Figure 2007165937
Figure 2007165937

ここにおいて、導電性プレート71の材料がCuである場合、サブマウント部材30として、CuWもしくはWを採用すれば、サブマウント部材30と導電性プレート71とを直接接合することが可能なので、例えば下記表3に示すように、サブマウント部材30と導電性プレート71とをろう材を用いて接合する場合に比べて、サブマウント部材30と導電性プレート71との接合面積を大きくできてサブマウント部材30と導電性プレート71との接合部の熱抵抗を低減できる。なお、LEDチップ10とサブマウント部材30とは、AuSn、SnAgCuなどの鉛フリー半田を用いて接合すればよいが、AuSnを用いて接合する場合には、サブマウント部材30における接合表面にあらかじめAuまたはAgからなる金属層を形成する前処理が必要である。   Here, when the material of the conductive plate 71 is Cu, if CuW or W is adopted as the submount member 30, the submount member 30 and the conductive plate 71 can be directly joined. As shown in Table 3, it is possible to increase the bonding area between the submount member 30 and the conductive plate 71 as compared with the case where the submount member 30 and the conductive plate 71 are bonded using a brazing material. Thus, the thermal resistance of the joint between the conductive plate 30 and the conductive plate 71 can be reduced. The LED chip 10 and the submount member 30 may be bonded using lead-free solder such as AuSn or SnAgCu. However, when bonding using AuSn, the bonding surface of the submount member 30 is preliminarily formed on the bonding surface. Alternatively, a pretreatment for forming a metal layer made of Ag is necessary.

Figure 2007165937
Figure 2007165937

また、サブマウント部材30の材料としてWを採用してサブマウント部材30と導電性プレート71とを直接接合した場合、下記表4から分かるように、サブマウント部材30と導電性プレート71とを銀ろうを用いて接合した場合に比べて熱伝導率が大きくなり、熱抵抗を低減できる。なお、導電性プレート71の材料がCuであり、サブマウント部材30の材料としてAlN、複合SiCなどを採用した場合には、導電性プレート71とサブマウント部材30とは、AuSn、SnAgCuなどの鉛フリー半田を用いて接合すればよいが、AuSnを用いて接合する場合には、導電性プレート71における接合表面にあらかじめAuまたはAgからなる金属層を形成する前処理が必要である。   Further, when W is used as the material of the submount member 30 and the submount member 30 and the conductive plate 71 are directly joined, as can be seen from Table 4 below, the submount member 30 and the conductive plate 71 are made of silver. Compared with the case where it joins using brazing, thermal conductivity becomes large and thermal resistance can be reduced. When the material of the conductive plate 71 is Cu and AlN, composite SiC, or the like is adopted as the material of the submount member 30, the conductive plate 71 and the submount member 30 are made of lead such as AuSn and SnAgCu. Bonding may be performed using free solder. However, when bonding using AuSn, a pretreatment for forming a metal layer made of Au or Ag in advance on the bonding surface of the conductive plate 71 is necessary.

Figure 2007165937
Figure 2007165937

ところで、本実施形態の発光装置1は、上述のように、チップ搭載部材70を保持する金属製の器具本体90に対して導電性プレート71を接合するために導電性プレート71の他面側に配設されてなり電気絶縁性を有し且つ導電性プレート71と器具本体90とを熱結合させるシート状の接合用部材80を備えており、当該接合用部材80を介して器具本体90に接合されている。すなわち、本実施形態における照明器具では、各発光装置1のチップ搭載部材70の導電性プレート71と金属部材である器具本体90との間にシート状の接合用部材80が介在しており、接合用部材80が、導電性プレート71と器具本体90との両者を電気的に絶縁し且つ熱結合させる機能を有している。   By the way, as described above, the light emitting device 1 of the present embodiment is disposed on the other surface side of the conductive plate 71 in order to join the conductive plate 71 to the metal instrument body 90 that holds the chip mounting member 70. It is provided with a sheet-like joining member 80 that is electrically insulated and that thermally couples the conductive plate 71 and the instrument body 90, and is joined to the instrument body 90 via the joining member 80. Has been. That is, in the lighting fixture in this embodiment, the sheet-like joining member 80 is interposed between the conductive plate 71 of the chip mounting member 70 of each light emitting device 1 and the fixture main body 90 that is a metal member. The member 80 has a function of electrically insulating and thermally coupling both the conductive plate 71 and the instrument main body 90.

ここにおいて、導電性プレート71と器具本体90との間に従来のような放熱シートを介在させた場合には、導電性プレート71と放熱シートとの密着不足により、両者の間に空隙が発生して熱抵抗が増大したり、発光装置1ごとに器具本体90までの熱抵抗がばらついてしまう。   Here, when a conventional heat dissipation sheet is interposed between the conductive plate 71 and the instrument main body 90, a gap is generated between the two due to insufficient adhesion between the conductive plate 71 and the heat dissipation sheet. As a result, the thermal resistance increases or the thermal resistance up to the instrument body 90 varies for each light-emitting device 1.

これに対して、本実施形態の発光装置1では、シート状の接合用部材80として、シリカやアルミナなどのフィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)を採用しており、電気絶縁性を有するとともに熱伝導率が高く加熱時の流動性が高く凹凸面への密着性が高いので、導電性プレート71を金属製の器具本体90に接合用部材80を介して接合する(チップ搭載部材70の導電性プレート71と器具本体90との間に接合用部材80を介在させた後で接合用部材80を加熱することで導電性プレート71と器具本体90とを接合する)際に接合用部材80と導電性プレート71および器具本体90との間に空隙が発生するのを防止することができて、密着不足による熱抵抗の増大やばらつきの発生を防止することができ、従来のようにLEDチップ10を回路基板に実装して回路基板と器具本体90との間にサーコン(登録商標)のようなゴムシート状の放熱シートなどを挟む場合に比べて、LEDチップ10から器具本体90までの熱抵抗を小さくすることができて放熱性が向上するとともに熱抵抗のばらつきが小さくなり、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。なお、接合用部材80に関して、例えば、器具本体90への熱伝達のための有効接触面積を25mm、接合用部材80の厚みを0.1mmとした場合、接合用部材80の熱抵抗を1K/W以下に抑制するには、接合用部材80の熱伝導率が4W/m・K以上である条件を満足する必要があるが、上述の溶融シリカを高充填したエポキシ樹脂シートを採用すれば、この条件を満足することもできる。 On the other hand, in the light emitting device 1 of the present embodiment, the sheet-like bonding member 80 includes a resin sheet (for example, fused silica) containing a filler made of a filler such as silica or alumina and having a low viscosity when heated. Organic green sheet such as an epoxy resin sheet filled with a high degree of electrical conductivity), and has electrical insulation properties, high thermal conductivity, high fluidity during heating, and high adhesion to uneven surfaces. The plate 71 is joined to the metal instrument main body 90 via the joining member 80 (the joining member after the joining member 80 is interposed between the conductive plate 71 of the chip mounting member 70 and the instrument main body 90). 80 is heated to join the conductive plate 71 and the instrument main body 90) to prevent a gap from being generated between the joining member 80, the conductive plate 71, and the instrument main body 90. Thus, an increase in thermal resistance due to insufficient adhesion and the occurrence of variations can be prevented, and the LED chip 10 is mounted on the circuit board as in the prior art, and the sircon ( Compared to a case where a rubber sheet-like heat dissipation sheet such as a registered trademark is sandwiched, the thermal resistance from the LED chip 10 to the appliance main body 90 can be reduced, heat dissipation is improved, and variation in thermal resistance is small. Therefore, since the temperature rise of the junction temperature of the LED chip 10 can be suppressed, the input power can be increased and the light output can be increased. Regarding the bonding member 80, for example, when the effective contact area for heat transfer to the instrument body 90 is 25 mm 2 and the thickness of the bonding member 80 is 0.1 mm, the thermal resistance of the bonding member 80 is 1K. In order to suppress to / W or less, it is necessary to satisfy the condition that the thermal conductivity of the bonding member 80 is 4 W / m · K or more. However, if an epoxy resin sheet highly filled with the above fused silica is used. This condition can also be satisfied.

なお、LEDチップ10と導電性プレート71との間に介在させているサブマウント部材30は、LEDチップ10と導電性プレート71との線膨張率の差が比較的小さい場合には必ずしも設ける必要はなく、LEDチップ10と導電性プレート71との間にサブマウント部材30を介在させない場合の方が、LEDチップ10と金属製の器具本体90の底壁90aとの間の距離が短くなって、LEDチップ10の発光部12から器具本体90までの熱抵抗をより小さくすることができ、放熱性がさらに向上するので、光出力のより一層の高出力化を図れる。   Note that the submount member 30 interposed between the LED chip 10 and the conductive plate 71 is not necessarily provided when the difference in linear expansion coefficient between the LED chip 10 and the conductive plate 71 is relatively small. In the case where the submount member 30 is not interposed between the LED chip 10 and the conductive plate 71, the distance between the LED chip 10 and the bottom wall 90a of the metal instrument body 90 is shortened. Since the thermal resistance from the light emitting part 12 of the LED chip 10 to the instrument main body 90 can be further reduced and the heat dissipation is further improved, the light output can be further increased.

(実施形態2)
以下、本実施形態の発光装置について図5〜図11を参照しながら説明する。
(Embodiment 2)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1の基本構成は実施形態1と略同じであり、LEDチップ10から放射された光の配光を制御するドーム状の光学部材であってチップ搭載部材70との間にLEDチップ10を収納する形でチップ搭載部材70の一表面側(図5における上面側)に固着された透光性材料からなる光学部材160と、光学部材160とチップ搭載部材70とで囲まれた空間でLEDチップ10および当該LEDチップ10に電気的に接続された複数本(本実施形態では、4本)のボンディングワイヤ14を封止した封止樹脂からなり透光性および弾性を有する封止部150と、LEDチップ10から放射され封止部150および光学部材160を透過した光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透光性材料とともに成形した成形品であってチップ搭載部材70の上記一表面側で光学部材160の光出射面160bとの間に空気層180が形成される形で配設されるドーム状の色変換部材170とを備えている点などが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, and is a dome-shaped optical member that controls the light distribution of the light emitted from the LED chip 10, and is between the chip mounting member 70. An optical member 160 made of a translucent material fixed to one surface side (the upper surface side in FIG. 5) of the chip mounting member 70 so as to accommodate the LED chip 10, and the optical member 160 and the chip mounting member 70 are surrounded. A sealing resin made of a sealing resin that seals the LED chip 10 and a plurality (four in this embodiment) of bonding wires 14 electrically connected to the LED chip 10 in the open space. Fluorescence which is excited by light emitted from the LED chip 10 and transmitted through the sealing part 150 and the optical member 160 and emits light of a color different from the emission color of the LED chip 10. A dome-like product formed with a light-transmitting material and disposed in such a manner that an air layer 180 is formed between the one surface side of the chip mounting member 70 and the light emitting surface 160b of the optical member 160. The color conversion member 170 is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

また、本実施形態におけるチップ搭載部材70は、LEDチップ10がサブマウント部材30を介して搭載される矩形板状の導電性プレート71と、導電性プレート71の一面側にポリオレフィン系の固着シート79(図6参照)を介して固着された矩形板状のフレキシブルプリント配線板からなる配線基板74とで構成されている。ここにおいて、チップ搭載部材70は、配線基板74における導電性プレート71の一面側に絶縁性基材からなる絶縁部72を介して設けられLEDチップ10と電気的に接続される導体パターン73,73を有しており、絶縁部72の中央部に導電性プレート71の一面の一部を露出させる窓孔75が形成されており、LEDチップ10が窓孔75の内側に配置されたサブマウント部材30を介して導電性プレート71に搭載されている。なお、配線基板74の絶縁部72としては、ポリイミドフィルムを用いており、各導体パターン73,73は、Cu膜とNi膜とAu膜との積層膜により構成されている。   The chip mounting member 70 in this embodiment includes a rectangular plate-shaped conductive plate 71 on which the LED chip 10 is mounted via the submount member 30, and a polyolefin-based fixing sheet 79 on one surface side of the conductive plate 71. It is comprised with the wiring board 74 which consists of a flexible printed wiring board of the rectangular plate shape fixed via (refer FIG. 6). Here, the chip mounting member 70 is provided on one surface side of the conductive plate 71 on the wiring board 74 via an insulating portion 72 made of an insulating base material, and is electrically connected to the LED chip 10. A window hole 75 exposing a part of one surface of the conductive plate 71 is formed in the central portion of the insulating portion 72, and the LED chip 10 is disposed inside the window hole 75. It is mounted on the conductive plate 71 through 30. Note that a polyimide film is used as the insulating portion 72 of the wiring board 74, and each conductor pattern 73, 73 is formed of a laminated film of a Cu film, a Ni film, and an Au film.

また、配線基板74は、導電性プレート71側とは反対の表面側に、LEDチップ10から放射された光を反射する白色系の樹脂からなるレジスト層76が積層されている。   In addition, the wiring substrate 74 has a resist layer 76 made of a white resin that reflects light emitted from the LED chip 10 laminated on the surface side opposite to the conductive plate 71 side.

また、本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10として一表面側において四隅のうちの隣り合う2箇所にアノード電極13a(図7および図8(a)参照)が形成され、残りの2箇所にカソード電極13b(図7および図8(a)参照)が形成されたものを用いており、各アノード電極13aそれぞれがボンディングワイヤ14を介して一方の導体パターン73と電気的に接続され、各カソード電極13bそれぞれがボンディングワイヤ14を介して他方の導体パターン73と電気的に接続されている。ここにおいて、配線基板74のレジスト層76は、窓孔75の近傍において各導体パターン73の2箇所が露出し、配線基板74の周部において各導体パターン73の1箇所が露出するようにパターニングされており、各導体パターン73は、窓孔75近傍において露出した2つの部位が、ボンディングワイヤ14が接続される端子部73aを構成し、レジスト層76の周部において露出した円形状の部位が外部接続用の電極部73bを構成している。なお、2つの電極部73bのうちLEDチップ10の各アノード電極13aが電気的に接続される電極部73b(図7における右側の電極部73b)には「+」の表示が形成され、LEDチップ10の各カソード電極13bが電気的に接続される電極部73b(図7における左側の電極部73b)には「−」の表示が形成されているので、発光装置1における両電極部73a,73bの極性を視認することができ、誤接続を防止することができる。   In the present embodiment, AlN having a relatively high thermal conductivity and insulation is adopted as the material of the submount member 30, and the LED chip 10 has two adjacent corners of the four corners on one surface side. An anode electrode 13a (see FIG. 7 and FIG. 8A) is formed, and a cathode electrode 13b (see FIG. 7 and FIG. 8A) is formed at the remaining two locations. Each of 13a is electrically connected to one conductor pattern 73 via bonding wire 14, and each cathode electrode 13b is electrically connected to the other conductor pattern 73 via bonding wire 14. Here, the resist layer 76 of the wiring substrate 74 is patterned so that two portions of each conductor pattern 73 are exposed in the vicinity of the window hole 75 and one portion of each conductor pattern 73 is exposed in the peripheral portion of the wiring substrate 74. In each conductor pattern 73, two portions exposed in the vicinity of the window hole 75 constitute a terminal portion 73a to which the bonding wire 14 is connected, and a circular portion exposed in the peripheral portion of the resist layer 76 is an external portion. The electrode part 73b for connection is comprised. Of the two electrode portions 73b, the electrode portion 73b (the right electrode portion 73b in FIG. 7) to which each anode electrode 13a of the LED chip 10 is electrically connected is formed with a “+” sign, and the LED chip. Since the symbol “-” is formed on the electrode portion 73b (the left electrode portion 73b in FIG. 7) to which the ten cathode electrodes 13b are electrically connected, both electrode portions 73a and 73b in the light emitting device 1 are formed. Can be visually recognized, and erroneous connection can be prevented.

ここにおいて、本実施形態では、配線基板74における窓孔75が矩形状であり、図8(a)に示すように、当該矩形状の窓孔75の各辺の中央部近傍に端子部73aが設けられているが、図8(b)に示すように、窓孔75の各辺の一端近傍に端子部73aを設けることにより、ボンディングワイヤ14の全長を長くすることができ、信頼性が向上する。   Here, in this embodiment, the window hole 75 in the wiring board 74 is rectangular, and as shown in FIG. 8A, the terminal portion 73a is provided near the center of each side of the rectangular window hole 75. Although provided, as shown in FIG. 8B, by providing the terminal portion 73a in the vicinity of one end of each side of the window hole 75, the entire length of the bonding wire 14 can be increased, and the reliability is improved. To do.

なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。   The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable.

上述の封止部150の材料である封止樹脂としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、例えばアクリル樹脂などを用いてもよい。   As the sealing resin that is the material of the sealing portion 150 described above, a silicone resin is used. However, the sealing resin is not limited to the silicone resin, and for example, an acrylic resin may be used.

光学部材160は、透光性材料(例えば、シリコーンなど)の成形品であってドーム状に形成されている。ここで、本実施形態では、光学部材160をシリコーンの成形品により構成しているので、光学部材160と封止部150との屈折率差および線膨張率差を小さくすることができる。なお、封止部150の材料がアクリル樹脂の場合には、光学部材160もアクリル樹脂により形成することが好ましい。   The optical member 160 is a molded product of a translucent material (for example, silicone) and is formed in a dome shape. Here, in the present embodiment, since the optical member 160 is formed of a silicone molded product, the refractive index difference and the linear expansion coefficient difference between the optical member 160 and the sealing portion 150 can be reduced. In addition, when the material of the sealing part 150 is an acrylic resin, it is preferable to form the optical member 160 also with an acrylic resin.

また、光学部材160は、光出射面160bが、光入射面160aから入射した光を光出射面160bと上述の空気層180との境界で全反射させない凸曲面状に形成されており、LEDチップ10と光軸が一致するように配置されている。したがって、LEDチップ10から放射され光学部材160の光入射面160aに入射された光が光出射面160bと空気層180との境界で全反射されることなく色変換部材170まで到達しやすくなり、全光束を高めることができる。なお、LEDチップ10の側面から放射された光は封止部150および光学部材160および空気層180を伝搬して色変換部材170まで到達し色変換部材170の蛍光体を励起したり蛍光体には衝突せずに色変換部材170を透過したりする。また、光学部材160は、位置によらず法線方向に沿って肉厚が一様となるように形成されている。   Further, the optical member 160 has a light exit surface 160b formed in a convex curved surface shape that does not totally reflect light incident from the light incident surface 160a at the boundary between the light exit surface 160b and the air layer 180 described above. 10 and the optical axis coincide with each other. Therefore, the light emitted from the LED chip 10 and incident on the light incident surface 160a of the optical member 160 can easily reach the color conversion member 170 without being totally reflected at the boundary between the light emitting surface 160b and the air layer 180, The total luminous flux can be increased. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 150, the optical member 160, and the air layer 180 to reach the color conversion member 170 to excite the phosphor of the color conversion member 170 or to the phosphor. Passes through the color conversion member 170 without colliding. Further, the optical member 160 is formed so that the thickness is uniform along the normal direction regardless of the position.

色変換部材170は、シリコーンのような透光性材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている(つまり、色変換部材170は、蛍光体を含有している)。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材170の外面170bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材170の材料として用いる透光性材料は、シリコーンに限らず、例えば、アクリル樹脂、ガラスなどを採用してもよい。また、色変換部材170の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 170 is a mixture formed by mixing a translucent material such as silicone and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. (That is, the color conversion member 170 contains a phosphor). Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 170b of the color conversion member 170 to obtain white light. Can do. The translucent material used as the material of the color conversion member 170 is not limited to silicone, and for example, acrylic resin, glass, or the like may be employed. Further, the phosphor mixed with the translucent material used as the material of the color conversion member 170 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材170は、内面170aが光学部材160の光出射面160bに沿った形状に形成されている。したがって、光学部材160の光出射面160bの位置によらず法線方向における光出射面160bと色変換部材170の内面170aとの間の距離が略一定値となっている。なお、色変換部材170は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。   Here, the color conversion member 170 is formed such that the inner surface 170 a is along the light emitting surface 160 b of the optical member 160. Therefore, the distance between the light emitting surface 160b and the inner surface 170a of the color conversion member 170 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 160b of the optical member 160. Note that the color conversion member 170 is formed so that the thickness along the normal direction is uniform regardless of the position.

本実施形態における発光装置1では、色変換部材170と光学部材160との間に空気層180が形成されているので、色変換部材170に外力が作用したときに色変換部材170が変形して光学部材160に当接する可能性が低くなって上記外力により色変換部材170に発生した応力が光学部材160および封止部150を通してLEDチップ10や各ボンディングワイヤ14に伝達されるのを抑制でき、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14の断線が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材170と光学部材160との間に上記空気層180が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点や、LEDチップ10から放射され封止部150および光学部材160を通して色変換部材170に入射し当該色変換部材170中の黄色蛍光体の粒子により散乱された光のうち光学部材160側へ散乱されて光学部材160を透過する光の光量を低減できて発光装置1全体としての外部への光取り出し効率を向上できるという利点がある。   In the light emitting device 1 according to this embodiment, since the air layer 180 is formed between the color conversion member 170 and the optical member 160, the color conversion member 170 is deformed when an external force is applied to the color conversion member 170. It is possible to suppress the stress generated in the color conversion member 170 due to the external force from being transmitted to the LED chip 10 and each bonding wire 14 through the optical member 160 and the sealing portion 150 because the possibility of coming into contact with the optical member 160 is reduced. Since the variation of the light emission characteristics of the LED chip 10 due to the external force and the disconnection of each bonding wire 14 are less likely to occur, there is an advantage that the reliability is improved. In addition, since the air layer 180 is formed between the color conversion member 170 and the optical member 160, the moisture in the external atmosphere is less likely to reach the LED chip 10, and the LED chip 10 is radiated. Light that is incident on the color conversion member 170 through the sealing unit 150 and the optical member 160 and is scattered by the yellow phosphor particles in the color conversion member 170 is scattered toward the optical member 160 and transmitted through the optical member 160. Therefore, there is an advantage that the light extraction efficiency of the light emitting device 1 as a whole can be improved.

なお、本実施形態の発光装置1では、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板74の上記一表面(レジスト層76の表面)よりも導電性プレート21から離れるように設定してあり、LEDチップ10から側方に放射された光が配線基板74の窓孔75の内周面を通して配線基板74に吸収されるのを防止することができる。   In the light emitting device 1 of the present embodiment, the thickness dimension of the submount member 30 is such that the surface of the submount member 30 is farther from the conductive plate 21 than the one surface of the wiring board 74 (the surface of the resist layer 76). The light emitted from the LED chip 10 to the side can be prevented from being absorbed by the wiring board 74 through the inner peripheral surface of the window hole 75 of the wiring board 74.

ところで、上述の発光装置1の製造方法にあたっては、例えば、LEDチップ10と各導体パターン73,73とをそれぞれ2本のボンディングワイヤ14を介して電気的に接続した後、図7に示すようにディスペンサ400のノズル401の先端部を配線基板74の窓孔75に連続して形成されている樹脂注入孔78に合わせてサブマウント部材30と配線基板74との隙間に封止部150の一部となる液状の封止樹脂(例えば、シリコーン樹脂)を注入してから硬化させ、その後、ドーム状の光学部材160の内側に上述の封止部150の残りの部分となる液状の封止樹脂(例えば、シリコーン樹脂)を注入してから、光学部材160をチップ搭載部材70における所定位置に配置して封止樹脂を硬化させることにより封止部150を形成するのと同時に光学部材160をチップ搭載部材70に固着し、その後、色変換部材170をチップ搭載部材70に固着するような製造方法が考えられるが、このような製造方法でも、製造過程において封止部150に気泡(ボイド)が発生する恐れがあるので、光学部材160に液状の封止樹脂を多めに注入する必要がある。しかしながら、このような製造方法を採用した場合、光学部材160をチップ搭載部材70における上記所定位置に配置する際に液状の封止樹脂の一部が光学部材160とチップ搭載部材70とで囲まれる空間から溢れ出てレジスト層76の表面上に広がってしまい、当該溢れ出た封止樹脂からなる不要部での光吸収や当該不要部の凹凸に起因した光の乱反射などにより、発光装置1全体としての光取り出し効率が低下してしまう。   By the way, in the manufacturing method of the light-emitting device 1 described above, for example, after the LED chip 10 and each of the conductor patterns 73 and 73 are electrically connected through the two bonding wires 14, respectively, as shown in FIG. A part of the sealing portion 150 is placed in the gap between the submount member 30 and the wiring board 74 so that the tip of the nozzle 401 of the dispenser 400 is aligned with the resin injection hole 78 formed continuously to the window hole 75 of the wiring board 74. The liquid sealing resin (for example, silicone resin) to be used is injected and cured, and then the liquid sealing resin (the remaining portion of the sealing portion 150 described above is formed inside the dome-shaped optical member 160). For example, after the silicone resin is injected, the sealing member 150 is formed by placing the optical member 160 at a predetermined position on the chip mounting member 70 and curing the sealing resin. At the same time, it is conceivable that the optical member 160 is fixed to the chip mounting member 70 and then the color conversion member 170 is fixed to the chip mounting member 70. Since bubbles (voids) may be generated in the stopper 150, it is necessary to inject a large amount of liquid sealing resin into the optical member 160. However, when such a manufacturing method is employed, a part of the liquid sealing resin is surrounded by the optical member 160 and the chip mounting member 70 when the optical member 160 is disposed at the predetermined position in the chip mounting member 70. The entire light-emitting device 1 overflows from the space and spreads on the surface of the resist layer 76, due to light absorption at an unnecessary portion made of the overflowing sealing resin, light irregular reflection due to unevenness of the unnecessary portion, and the like. As a result, the light extraction efficiency decreases.

そこで、本実施形態の発光装置1では、チップ搭載部材70の上記一表面において光学部材160のリング状の端縁に重なる部位と色変換部材170のリング状の端縁に重なる部位との間に、光学部材160とチップ搭載部材70とで囲まれる空間から溢れ出た封止樹脂を溜める複数の樹脂溜め用穴77を光学部材160の外周方向に離間して形成してある。ここで、樹脂溜め用穴77は、配線基板74に形成した貫通孔77aと導電性プレート71において貫通孔77aに対応する部位に形成された凹部77bとで構成されている。また、本実施形態の発光装置1は、チップ搭載部材70の上記一表面側において光学部材160のリング状の端縁に重なる部位と色変換部材170のリング状の端縁と重なる部位との間に配置されて各樹脂溜め用穴77を覆うリング状の光吸収防止用基板40を備えており、各樹脂溜め用穴77内に溜まって硬化した封止樹脂からなる樹脂部による光吸収を、光吸収防止用基板40によって防止することができる。ここにおいて、光吸収防止用基板40は、チップ搭載部材70側とは反対の表面側にLEDチップ10や色変換部材170などからの光を反射する白色系のレジスト層が設けられているので、上記光の吸収を防止することができる。なお、光吸収防止用基板40は、光学部材160をチップ搭載部材70における所定位置に配置する際に溢れ出た封止樹脂が各樹脂溜め用穴77内に充填された後で、チップ搭載部材70の上記一表面側に載置すればよく、その後で封止樹脂を硬化させる際に封止樹脂によりチップ搭載部材70に固着されることとなる。ここで、リング状の光吸収防止用基板40には、各樹脂溜め用穴77の微小領域を露出させる複数の切欠部42が形成されており、樹脂溜め用穴77内の封止樹脂を硬化させる際にボイドが発生するのを防止することができる。   Therefore, in the light emitting device 1 of the present embodiment, between the portion overlapping the ring-shaped end edge of the optical member 160 and the portion overlapping the ring-shaped end edge of the color conversion member 170 on the one surface of the chip mounting member 70. A plurality of resin reservoir holes 77 for storing the sealing resin overflowing from the space surrounded by the optical member 160 and the chip mounting member 70 are formed apart from each other in the outer peripheral direction of the optical member 160. Here, the resin reservoir hole 77 includes a through hole 77 a formed in the wiring substrate 74 and a recess 77 b formed in a portion corresponding to the through hole 77 a in the conductive plate 71. Further, in the light emitting device 1 of the present embodiment, on the one surface side of the chip mounting member 70, between the portion overlapping the ring-shaped end edge of the optical member 160 and the portion overlapping the ring-shaped end edge of the color conversion member 170. And a ring-shaped light absorption preventing substrate 40 that covers each resin reservoir hole 77, and absorbs light by a resin portion made of a sealing resin that has accumulated and cured in each resin reservoir hole 77. This can be prevented by the light absorption preventing substrate 40. Here, since the light absorption preventing substrate 40 is provided with a white resist layer that reflects light from the LED chip 10 or the color conversion member 170 on the surface side opposite to the chip mounting member 70 side, The absorption of the light can be prevented. The light absorption preventing substrate 40 is formed after the sealing resin overflowing when the optical member 160 is disposed at a predetermined position in the chip mounting member 70 is filled in each resin reservoir hole 77. It is sufficient to place it on the one surface side of 70, and when the sealing resin is cured thereafter, it is fixed to the chip mounting member 70 by the sealing resin. Here, the ring-shaped light absorption preventing substrate 40 is formed with a plurality of notches 42 for exposing minute regions of the resin reservoir holes 77, and the sealing resin in the resin reservoir holes 77 is cured. It is possible to prevent voids from being generated.

以上説明した本実施形態の発光装置1では、実施形態1と同様に、チップ搭載部材70を保持する金属部材である器具本体90に対して導電性プレート71を接合するために導電性プレート71の他面側に配設されてなり電気絶縁性を有し且つ導電性プレート71と器具本体90とを熱結合させるシート状の接合用部材80を備えているので、ゴムシート状の放熱シートを器具本体90との間に介在させる形で配置する場合に比べて、LEDチップ10の発光部からチップ搭載部材を保持する金属部材までの熱抵抗を小さくできて放熱性が向上するとともに熱抵抗のばらつきを低減でき、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   In the light emitting device 1 of the present embodiment described above, as in the first embodiment, in order to join the conductive plate 71 to the instrument main body 90 that is a metal member that holds the chip mounting member 70, Since the sheet-like joining member 80 which is disposed on the other surface side and has an electrical insulation property and thermally couples the conductive plate 71 and the instrument main body 90 is provided, the rubber sheet-like heat dissipation sheet is attached to the instrument. Compared with the case where the LED chip 10 is interposed between the light emitting part and the metal member holding the chip mounting member, the heat resistance can be reduced and the heat dissipation can be improved and the thermal resistance can be varied. Since the temperature rise of the junction temperature of the LED chip can be suppressed, the input power can be increased and the light output can be increased.

また、本実施形態の発光装置1では、接合用部材80の平面サイズを導電性プレート71の平面サイズよりも大きく設定してあるので、接合用部材80と導電性プレート71とが同じ平面サイズに形成されている場合に比べて、導電性プレート71と金属部材である器具本体90との間の沿面距離を長くすることができ、照明器具用の光源として用いる場合の耐雷サージ性を高めることができる(ただし、一般的に屋内用の照明器具と屋外用の照明器具とで要求される発光装置と金属部材との沿面距離は異なり、屋外用の照明器具の方がより長い沿面距離を要求される)。ここにおいて、シート状の接合用部材80の厚みについては、耐雷サージ性の要求耐圧に応じて厚みを設計する必要があるが、熱抵抗を低減する観点からはより薄く設定することが望ましい。したがって、接合用部材80に関しては、厚みを設定した上で、沿面距離の要求を満足できるように平面サイズを設定すればよい。   Further, in the light emitting device 1 of this embodiment, since the planar size of the joining member 80 is set larger than the planar size of the conductive plate 71, the joining member 80 and the conductive plate 71 have the same planar size. Compared with the case where it is formed, the creeping distance between the conductive plate 71 and the appliance main body 90 that is a metal member can be increased, and the lightning surge resistance when used as a light source for a lighting fixture can be improved. (However, the creepage distance between the light emitting device and the metal member, which is generally required for indoor lighting fixtures and outdoor lighting fixtures, is different, and outdoor lighting fixtures are required to have longer creepage distances. ) Here, the thickness of the sheet-like joining member 80 needs to be designed in accordance with the lightning surge resistance required withstand voltage, but it is desirable to set it thinner from the viewpoint of reducing thermal resistance. Therefore, regarding the joining member 80, after setting the thickness, the plane size may be set so as to satisfy the requirement of the creepage distance.

ところで、実施形態1で説明した照明器具では、各発光装置1をリード線93(図1および図4参照)により適宜接続してあるが、本実施形態における照明器具は、図10および図11に示すように、各発光装置1の接続関係を規定する配線パターン302が絶縁性基材301の一表面側に形成された回路基板300を備えている。なお、本実施形態では、複数の発光装置1を直列接続しているが、複数の発光装置1の接続関係は特に限定するものではなく、例えば、並列接続するようにしてもよいし、直列接続と並列接続とを組み合わせてもよい。   By the way, in the lighting fixture demonstrated in Embodiment 1, although each light-emitting device 1 is connected suitably by the lead wire 93 (refer FIG. 1 and FIG. 4), the lighting fixture in this embodiment is shown to FIG. 10 and FIG. As shown, the circuit board 300 is provided with a wiring pattern 302 that defines the connection relationship of each light emitting device 1 formed on one surface side of the insulating base material 301. In the present embodiment, the plurality of light emitting devices 1 are connected in series. However, the connection relationship between the plurality of light emitting devices 1 is not particularly limited. For example, the light emitting devices 1 may be connected in parallel or connected in series. And parallel connection may be combined.

回路基板300は、器具本体90内において当該器具本体90の底壁90aから離間して配置されるものであり、各発光装置1それぞれに対応する部位に各発光装置1の一部を通す開孔窓304が形成されている。なお、回路基板300の絶縁性基材301の材料としては、例えば、FR4のようなガラスエポキシ樹脂を採用すればよいが、ガラスエポキシ樹脂に限らず、例えば、ポリイミド系樹脂、フェノール樹脂などでもよい。   The circuit board 300 is disposed in the instrument main body 90 so as to be separated from the bottom wall 90a of the instrument main body 90, and has an opening through which a part of each light emitting device 1 is passed through a portion corresponding to each light emitting device 1. A window 304 is formed. In addition, as a material of the insulating base material 301 of the circuit board 300, for example, a glass epoxy resin such as FR4 may be adopted, but not limited to a glass epoxy resin, for example, a polyimide resin, a phenol resin, or the like may be used. .

上述の回路基板300は、器具本体90の底壁90aに貫設されている挿通孔90cに挿通された給電用のリード線が挿通される電線挿通孔306が貫設されており、電線挿通孔306に挿通された一対の電線が電気的に接続されるようになっている。また、回路基板300は、器具本体90の底壁90a側とは反対の表面側に白色系のレジスト層からなる光反射層303が形成されており、配線パターン302の大部分が光反射層303により覆われている。   The circuit board 300 is provided with a wire insertion hole 306 through which a lead wire for power supply inserted through an insertion hole 90c formed in the bottom wall 90a of the instrument body 90 is inserted. A pair of electric wires inserted through 306 are electrically connected. Further, the circuit board 300 has a light reflecting layer 303 formed of a white resist layer on the surface side opposite to the bottom wall 90 a side of the instrument main body 90, and most of the wiring pattern 302 is the light reflecting layer 303. Covered by.

また、回路基板300は、各開口窓304の開口サイズが発光装置1におけるチップ搭載部材70の平面サイズよりもやや大きく設定されている。ここにおいて、本実施形態の発光装置1では、チップ搭載部材70の平面視における四隅に面取り部を形成して丸みをもたせてあるが、各電極部73b近傍の面取り部(図7における左右の面取り部)に比べて残りの2つの面取り部(図7における上下の面取り部)の曲率半径を大きくしてあるので、回路基板300の上記一表面側において配線パターン302の形成可能な領域の面積を大きくすることができる。なお、回路基板300には、発光装置1のLEDチップ10へ過電圧が印加されるのを防止するために、過電圧防止用の表面実装型のツェナダイオード331(図11参照)および表面実装型のセラミックコンデンサ332(図11参照)が各開口窓304の近傍で実装されている。   In the circuit board 300, the opening size of each opening window 304 is set to be slightly larger than the planar size of the chip mounting member 70 in the light emitting device 1. Here, in the light emitting device 1 of the present embodiment, the chamfered portions are formed at the four corners in plan view of the chip mounting member 70 to be rounded, but the chamfered portions in the vicinity of each electrode portion 73b (the left and right chamfered portions in FIG. The radius of curvature of the remaining two chamfered portions (upper and lower chamfered portions in FIG. 7) is larger than that of the first portion of the circuit board 300. Can be bigger. In addition, in order to prevent an overvoltage from being applied to the LED chip 10 of the light emitting device 1, the circuit board 300 is provided with a surface mount type Zener diode 331 (see FIG. 11) for preventing overvoltage and a surface mount type ceramic. A capacitor 332 (see FIG. 11) is mounted in the vicinity of each opening window 304.

ところで、本実施形態の発光装置1は、チップ搭載部材70の各電極部73bが端子板310を介して回路基板300の配線パターン302と電気的に接続されている。ここにおいて、端子板310は、細長の金属板の一端部をL字状に曲成することにより配線パターン302に厚み方向が重なる形で接合される端子片311を形成するとともに、他端部をJ字状に曲成することにより電極部73bに厚み方向が一致する形で接合される端子片312を形成したものであり、器具本体90と回路基板300との線膨張率差に起因して接続端子310と電極部73bおよび配線パターン302それぞれとの接合部に発生する応力を緩和可能となっており、各発光装置1と回路基板300との間の接続信頼性を高めることができる。   By the way, in the light emitting device 1 of the present embodiment, each electrode portion 73 b of the chip mounting member 70 is electrically connected to the wiring pattern 302 of the circuit board 300 through the terminal plate 310. Here, the terminal plate 310 forms a terminal piece 311 that is joined to the wiring pattern 302 in the form of overlapping the thickness direction by bending one end of an elongated metal plate into an L shape, and the other end is The terminal piece 312 is formed by being bent in a J-shape to be joined to the electrode portion 73b so that the thickness direction coincides with the electrode portion 73b, resulting from a difference in linear expansion coefficient between the instrument body 90 and the circuit board 300. The stress generated at the joint between the connection terminal 310, the electrode part 73b, and the wiring pattern 302 can be relaxed, and the connection reliability between each light emitting device 1 and the circuit board 300 can be improved.

なお、上述の各実施形態では、各発光装置1それぞれが接合用部材80を備えているが、接合用部材80の平面サイズを大きくして、1枚の接合用部材80を複数個の発光装置1で共用してもよい。   In each of the above-described embodiments, each light emitting device 1 includes the joining member 80. However, the planar size of the joining member 80 is increased, and one joining member 80 is replaced with a plurality of light emitting devices. 1 may be shared.

実施形態1の発光装置を照明器具の器具本体に実装した状態の要部概略断面図である。It is a principal part schematic sectional drawing of the state which mounted the light-emitting device of Embodiment 1 in the fixture main body of a lighting fixture. 同上における発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of the light-emitting device same as the above. 同上における照明器具の一部破断した概略側面図である。It is the schematic side view in which the lighting fixture in the same as the above was fractured. 同上における照明器具の要部概略斜視図である。It is a principal part schematic perspective view of the lighting fixture in the same as the above. 実施形態2の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 同上の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device same as the above. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 同上の発光装置の要部説明図である。It is principal part explanatory drawing of a light-emitting device same as the above. 同上の発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of a light-emitting device same as the above. 同上の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device same as the above. 同上の発光装置を用いた照明器具の要部概略斜視図である。It is a principal part schematic perspective view of the lighting fixture using the light-emitting device same as the above. 従来例を示す発光装置(LEDユニット)の概略断面図である。It is a schematic sectional drawing of the light-emitting device (LED unit) which shows a prior art example.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
11 導電性基板
12 発光部
30 サブマウント部材
70 チップ搭載部材
71 導電性プレート(伝熱板)
72 絶縁部
73 導体パターン
80 接合用部材
90 器具本体(金属部材)
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 11 Conductive substrate 12 Light-emitting part 30 Submount member 70 Chip mounting member 71 Conductive plate (heat-transfer plate)
72 Insulating part 73 Conductor pattern 80 Joining member 90 Instrument body (metal member)

Claims (5)

LEDチップと、LEDチップが一面側に搭載される熱伝導性材料からなる伝熱板および当該伝熱板の前記一面側に絶縁部を介して設けられLEDチップと電気的に接続される導体パターンを有するチップ搭載部材と、チップ搭載部材を保持する金属部材に対して伝熱板を接合するために伝熱板の他面側に配設されてなり電気絶縁性を有し且つ伝熱板と金属部材とを熱結合させるシート状の接合用部材とを備えることを特徴とする発光装置。   An LED chip, a heat transfer plate made of a heat conductive material on which the LED chip is mounted on one surface side, and a conductor pattern provided on the one surface side of the heat transfer plate via an insulating portion and electrically connected to the LED chip A chip mounting member, and a heat transfer plate disposed on the other side of the heat transfer plate for joining the heat transfer plate to a metal member holding the chip mounting member. A light-emitting device comprising: a sheet-like joining member that thermally couples a metal member. 前記LEDチップは、SiC基板もしくはGaN基板からなる導電性基板の主表面側にGaN系化合物半導体材料により形成された発光部を備えたものであることを特徴とする請求項1記載の発光装置。   The light emitting device according to claim 1, wherein the LED chip includes a light emitting portion formed of a GaN-based compound semiconductor material on a main surface side of a conductive substrate made of a SiC substrate or a GaN substrate. 前記LEDチップのチップサイズよりも大きく且つ前記LEDチップと前記伝熱板との間に介在して両者の線膨張率の差に起因して前記LEDチップに働く応力を緩和するサブマウント部材を備えることを特徴とする請求項1または請求項2記載の発光装置。   A submount member that is larger than the chip size of the LED chip and is interposed between the LED chip and the heat transfer plate to relieve stress acting on the LED chip due to a difference in linear expansion coefficient between the two. The light-emitting device according to claim 1 or 2. 前記接合用部材は、フィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シートからなることを特徴とする請求項1ないし請求項3のいずれか1項に記載の発光装置。   The light emitting device according to any one of claims 1 to 3, wherein the joining member is made of a resin sheet containing a filler made of a filler and having a low viscosity when heated. 前記接合用部材は、前記伝熱板よりも平面サイズが大きく設定されてなることを特徴とする請求項1ないし請求項4のいずれか1項に記載の発光装置。   5. The light emitting device according to claim 1, wherein the joining member has a planar size larger than that of the heat transfer plate.
JP2007062213A 2005-06-30 2007-03-12 Light-emitting device Pending JP2007165937A (en)

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JP2009130300A (en) * 2007-11-27 2009-06-11 Panasonic Electric Works Co Ltd Method of manufacturing light-emitting device
JP2011100653A (en) * 2009-11-06 2011-05-19 Panasonic Electric Works Co Ltd Mounting structure of led package and led lighting device
JP2012190841A (en) * 2011-03-08 2012-10-04 Panasonic Corp Led package and led lighting device
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JP2005109282A (en) * 2003-09-30 2005-04-21 Toyoda Gosei Co Ltd Light emitting device
JP2005136224A (en) * 2003-10-30 2005-05-26 Asahi Kasei Electronics Co Ltd Light-emitting diode illumination module
JP2005159045A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Semiconductor light emitting element mounting member and light emitting diode using the same

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Publication number Priority date Publication date Assignee Title
JP2005109282A (en) * 2003-09-30 2005-04-21 Toyoda Gosei Co Ltd Light emitting device
JP2005136224A (en) * 2003-10-30 2005-05-26 Asahi Kasei Electronics Co Ltd Light-emitting diode illumination module
JP2005159045A (en) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd Semiconductor light emitting element mounting member and light emitting diode using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130300A (en) * 2007-11-27 2009-06-11 Panasonic Electric Works Co Ltd Method of manufacturing light-emitting device
JP2012529740A (en) * 2009-06-10 2012-11-22 シリシュ デビダス デシュパンデ Customizable, long-life and high thermal efficiency environmentally friendly solid state lighting
JP2011100653A (en) * 2009-11-06 2011-05-19 Panasonic Electric Works Co Ltd Mounting structure of led package and led lighting device
JP2012190841A (en) * 2011-03-08 2012-10-04 Panasonic Corp Led package and led lighting device

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