JP5054331B2 - Lighting equipment using LED - Google Patents

Lighting equipment using LED Download PDF

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JP5054331B2
JP5054331B2 JP2006182470A JP2006182470A JP5054331B2 JP 5054331 B2 JP5054331 B2 JP 5054331B2 JP 2006182470 A JP2006182470 A JP 2006182470A JP 2006182470 A JP2006182470 A JP 2006182470A JP 5054331 B2 JP5054331 B2 JP 5054331B2
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led chip
led
mounting member
chip
chip mounting
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JP2007043126A (en
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洋二 浦野
卓也 中谷
康博 日高
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

本発明は、LEDを用いた照明器具に関するものである。   The present invention relates to a lighting fixture using LEDs.

従来から、LEDチップとLEDチップから放射された光によって励起されてLEDチップとは異なる発光色の光を放射する波長変換材料としての蛍光体(蛍光顔料、蛍光染料など)とを組み合わせてLEDチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている。この種の発光装置としては、例えば、青色光あるいは紫外光を放射するLEDチップと蛍光体とを組み合わせて白色の光(白色光の発光スペクトル)を得る白色発光装置(一般的に白色LEDと呼ばれている)の商品化がなされている。   Conventionally, LED chips are combined with LED chips and phosphors (fluorescent pigments, fluorescent dyes, etc.) as wavelength conversion materials that are excited by light emitted from the LED chips and emit light of a different emission color from the LED chips. Research and development of light-emitting devices that emit light of a color different from the color of the light is being conducted in various places. As this type of light-emitting device, for example, a white light-emitting device (generally called a white LED) that obtains white light (white light emission spectrum) by combining an LED chip that emits blue light or ultraviolet light and a phosphor. Has been commercialized.

また、最近の白色LEDの高出力化に伴い、白色LEDを照明用途に展開する研究開発が盛んになってきているが、上述の白色LEDを一般照明などのように比較的大きな光出力を必要とする用途に用いる場合、1つの白色LEDでは所望の光出力を得ることができないので、複数個の白色LEDを1枚の回路基板上に搭載したLEDユニットを構成し、LEDユニット全体で所望の光出力を確保するようにしているのが一般的である(例えば、特許文献1)。   In addition, with the recent increase in output of white LEDs, research and development for expanding white LEDs into lighting applications has become active, but the above-mentioned white LEDs require a relatively large light output, such as general lighting. When using for a purpose, it is impossible to obtain a desired light output with a single white LED. Therefore, an LED unit in which a plurality of white LEDs are mounted on a single circuit board is configured, and the desired overall LED unit is formed. Generally, light output is ensured (for example, Patent Document 1).

また、従来から、複数のLEDチップと各LEDチップを実装する回路基板とを備えるLEDユニットにおいて、各LEDチップのジャンクション温度の上昇を抑制して入力電力を大きくすることで光出力の高出力化を図るために、各LEDチップの発光部で発生した熱を効率良く外部に放熱させるための構造が提案されている(例えば、特許文献2,3参照)。   Conventionally, in an LED unit including a plurality of LED chips and a circuit board on which each LED chip is mounted, the increase in the junction temperature of each LED chip is suppressed and the input power is increased to increase the light output. In order to achieve this, a structure for efficiently radiating the heat generated in the light emitting portion of each LED chip to the outside has been proposed (see, for example, Patent Documents 2 and 3).

上記特許文献2に開示されたLEDユニットでは、図12に示すように、回路基板200として、金属板201上に絶縁樹脂層202を介して導体パターン203が形成された金属基板を採用しており、各LEDチップ10’で発生した熱が熱伝達部材210を介して金属板201に伝熱されるようになっている。ここにおいて、各LEDチップ10’は、GaN系化合物半導体材料からなる発光部が絶縁体であるサファイア基板からなる結晶成長用基板の一表面側に形成されたGaN系青色LEDチップであり、回路基板200にフリップチップ実装されており、結晶成長用基板の他表面が光取り出し面となっている。   In the LED unit disclosed in Patent Document 2, a metal substrate in which a conductor pattern 203 is formed on a metal plate 201 via an insulating resin layer 202 is employed as a circuit substrate 200 as shown in FIG. The heat generated in each LED chip 10 ′ is transferred to the metal plate 201 through the heat transfer member 210. Here, each LED chip 10 ′ is a GaN-based blue LED chip formed on one surface side of a crystal growth substrate made of a sapphire substrate whose light-emitting portion made of a GaN-based compound semiconductor material is an insulator, and a circuit board The other surface of the crystal growth substrate is a light extraction surface.

また、上記特許文献3に開示されたLEDユニットでは、図13に示すように、図12の構成と同様に回路基板200として、金属板201上に絶縁樹脂層202を介して導体パターン203が形成された金属基板を採用しており、各LEDチップ10”で発生した熱が金属板201に伝熱されるようになっている。ここにおいて、各LEDチップ10”は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたものであり、アノード電極とカソード電極とのうち回路基板200に近い側の電極が第1の導体板212に電気的に接続されるとともに、回路基板200から遠い側の電極が第2の導体板213に金属細線からなるボンディングワイヤ214を介して電気的に接続されており、第1の導体板212および第2の導体板213それぞれが回路基板200の回路パターン203と接合されている。
特開2003−59332号公報 特開2003−168829号公報(段落〔0030〕、および図6) 特開2001−203396号公報(図6)
Further, in the LED unit disclosed in Patent Document 3, a conductive pattern 203 is formed on a metal plate 201 with an insulating resin layer 202 as shown in FIG. The heat generated in each LED chip 10 ″ is transferred to the metal plate 201. Here, each LED chip 10 ″ has an anode electrode on one surface side. The cathode electrode is formed on the other surface side, and the electrode closer to the circuit board 200 of the anode electrode and the cathode electrode is electrically connected to the first conductor plate 212, and The electrode far from the circuit board 200 is electrically connected to the second conductor plate 213 via a bonding wire 214 made of a fine metal wire. Beauty respective second conductive plate 213 is bonded to the circuit pattern 203 of the circuit board 200.
JP 2003-59332 A JP 2003-168829 A (paragraph [0030] and FIG. 6) JP 2001-203396 A (FIG. 6)

ところで、図12や図13に示した構成のLEDユニットを照明器具に用いる場合、器具本体を金属製としてLEDユニットの回路基板200における金属板201を器具本体に熱的に結合させることでLEDユニットの熱をより効率的に放熱させることが考えられるが、耐雷サージ性を確保するために、器具本体と回路基板200の金属板201との間に例えばシート状の絶縁部材として例えばサーコン(登録商標)のようなゴムシート状の放熱シートを介在させる必要があり、各LEDチップ10’,10”の発光部から器具本体までの熱抵抗が大きくなってしまい、各LEDチップ10’,10”のジャンクション温度が最大ジャンクション温度を超えないように各LEDチップ10’,10”への入力電力を制限する必要があり、光出力の高出力化が難しかった。   By the way, when the LED unit having the configuration shown in FIGS. 12 and 13 is used for a lighting fixture, the LED main unit is made of metal, and the metal plate 201 on the circuit board 200 of the LED unit is thermally coupled to the fixture main unit, thereby the LED unit. However, in order to ensure lightning surge resistance, for example, as a sheet-like insulating member between the instrument body and the metal plate 201 of the circuit board 200, for example, Sarcon (registered trademark) ) Such as a rubber sheet-like heat dissipation sheet, and the thermal resistance from the light emitting portion of each LED chip 10 ′, 10 ″ to the instrument body increases, and each LED chip 10 ′, 10 ″ It is necessary to limit the input power to each LED chip 10 ′, 10 ″ so that the junction temperature does not exceed the maximum junction temperature. Higher output of the force has been difficult.

また、回路基板200の金属板201と器具本体との間に上述の放熱シートを介在させた場合には、金属板201と放熱シートとの密着不足により、両者の間に空隙が発生して熱抵抗が増大したり、各LEDチップ10’,10”の発光部ごとに器具本体までの熱抵抗がばらついていた。   In addition, when the above-described heat dissipation sheet is interposed between the metal plate 201 of the circuit board 200 and the appliance body, a gap is generated between the metal plate 201 and the heat dissipation sheet due to insufficient adhesion between the metal plate 201 and the heat dissipation sheet. The resistance increased, or the thermal resistance to the fixture body varied for each light emitting part of each LED chip 10 ′, 10 ″.

また、上記特許文献2に開示されたLEDユニットでは、LEDチップ10’の発光部で発生した熱をLEDチップ10’のサイズよりも小さな熱伝達部材210を介して金属板201へ伝熱させるのでLEDチップ10’から金属板201までの熱抵抗が比較的大きく、結晶成長用基板であるサファイア基板を金属板201に熱結合させるように実装した場合には、サファイア基板の熱抵抗が大きくなってしまうという不具合もあった。   In the LED unit disclosed in Patent Document 2, heat generated in the light emitting portion of the LED chip 10 ′ is transferred to the metal plate 201 through the heat transfer member 210 smaller than the size of the LED chip 10 ′. The thermal resistance from the LED chip 10 ′ to the metal plate 201 is relatively large, and when the sapphire substrate that is a crystal growth substrate is mounted so as to be thermally coupled to the metal plate 201, the thermal resistance of the sapphire substrate becomes large. There was also a problem that it ended up.

本発明は上記事由に鑑みて為されたものであり、その目的は、LEDチップの温度上昇を抑制でき光出力の高出力化を図れるLEDを用いた照明器具を提供することにある。   This invention is made | formed in view of the said reason, The objective is to provide the lighting fixture using LED which can suppress the temperature rise of an LED chip and can aim at the high output of light output.

請求項1の発明は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたLEDチップと、LEDチップが搭載された金属板からなるチップ搭載部材と、LEDチップのアノード電極が電気的に接続されたアノード側リード端子と、LEDチップのカソード電極が電気的に接続されたカソード側リード端子と、金属製の器具本体と、チップ搭載部材およびアノード側リード端子およびカソード側リード端子と器具本体との間に介在し両者を電気的に絶縁し且つ両者を熱結合させる絶縁層とを備え、絶縁層は、熱硬化性の固着材により形成されてなることを特徴とする。 According to a first aspect of the present invention, there is provided an LED chip in which an anode electrode is formed on one surface side and a cathode electrode is formed on the other surface side, a chip mounting member made of a metal plate on which the LED chip is mounted, An anode side lead terminal to which the anode electrode is electrically connected, a cathode side lead terminal to which the cathode electrode of the LED chip is electrically connected, a metal instrument body, a chip mounting member, an anode side lead terminal and a cathode e Bei an interposed insulating layer for electrically insulating and thermally coupling the two both between the side lead terminal and the instrument body, the insulating layer is characterized by being formed by a thermosetting adhesive material And

この発明によれば、従来に比べてLEDチップの発光部から器具本体までの熱抵抗を小さくできて放熱性が向上し、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。また、従来と同じ光出力で使用する場合には従来に比べてLEDチップのジャンクション温度を低減できてLEDチップの寿命が長くなるという利点がある。さらに、従来のような回路基板を用意する必要がなく低コスト化を図れるという利点もある。また、この発明によれば、絶縁層は、熱硬化性の固着材により形成されてなるので、チップ搭載部材と絶縁層との密着不足によりチップ搭載部材と絶縁層との間に空隙が発生して熱抵抗が増大したり、絶縁層の経年変化によりチップ搭載部材と絶縁層との間に間隙が発生して熱抵抗が増大するのを防止することができる。 According to the present invention, the heat resistance from the light emitting part of the LED chip to the fixture body can be reduced and heat dissipation can be improved and the temperature rise of the junction temperature of the LED chip can be suppressed compared to the conventional case, so that the input power can be increased. , The light output can be increased. Further, when used with the same light output as before, there is an advantage that the junction temperature of the LED chip can be reduced and the life of the LED chip is prolonged as compared with the conventional one. Furthermore, there is an advantage that it is not necessary to prepare a conventional circuit board and the cost can be reduced . According to the present invention, since the insulating layer is formed of a thermosetting fixing material, a gap is generated between the chip mounting member and the insulating layer due to insufficient adhesion between the chip mounting member and the insulating layer. Therefore, it is possible to prevent the thermal resistance from increasing due to an increase in the thermal resistance or a gap between the chip mounting member and the insulating layer due to the aging of the insulating layer.

請求項2の発明は、請求項1の発明において、前記チップ搭載部材が前記アノード側リード端子と前記カソード側リード端子とのうちの一方に連続一体に形成され、前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子が絶縁性の合成樹脂成形品の保持枠に同時一体に成形されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the chip mounting member is continuously formed integrally with one of the anode side lead terminal and the cathode side lead terminal, and the chip mounting member and the anode side are formed. The lead terminal and the cathode side lead terminal are formed integrally with a holding frame of an insulating synthetic resin molded product at the same time.

この発明によれば、前記LEDチップが搭載される前記チップ搭載部材が保持枠に保持されているので、取り扱いが容易になり、少なくとも前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子が同時一体に成形された保持枠と前記LEDチップとの組を個別部品として、当該個別部品を前記器具本体に実装する前に検査することが可能となる。   According to this invention, since the chip mounting member on which the LED chip is mounted is held by the holding frame, the handling becomes easy, and at least the chip mounting member, the anode side lead terminal, and the cathode side lead terminal Can be inspected before the individual parts are mounted on the instrument body, with the set of the holding frame and the LED chip formed integrally at the same time as individual parts.

請求項3の発明は、請求項2の発明において、前記保持枠は、前記器具本体との対向面に、前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子と前記器具本体との間の絶縁距離を確保する凸部が突設されてなることを特徴とする。   According to a third aspect of the present invention, in the second aspect of the present invention, the holding frame includes a chip mounting member, the anode-side lead terminal, the cathode-side lead terminal, and the instrument main body on a surface facing the instrument main body. Protruding portions for securing an insulation distance between them are projected.

この発明によれば、前記絶縁層の状態によらず、前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子と前記器具本体とを確実に電気的に絶縁することができる。   According to the present invention, the chip mounting member, the anode-side lead terminal, the cathode-side lead terminal, and the instrument body can be reliably electrically insulated regardless of the state of the insulating layer.

請求項4の発明は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたLEDチップと、LEDチップが一面側に搭載される導電性プレートおよび当該導電性プレートの前記一面側に絶縁部を介して形成されLEDチップのアノード電極およびカソード電極がそれぞれ電気的に接続されるリードパターンを有するチップ搭載部材と、金属製の器具本体と、チップ搭載部材と器具本体との間に介在し両者を電気的に絶縁し且つ両者を熱結合させる絶縁層とを備え、絶縁層は、熱硬化性の固着材により形成されてなることを特徴とする。 According to a fourth aspect of the present invention, there is provided an LED chip in which an anode electrode is formed on one surface side and a cathode electrode is formed on the other surface side, a conductive plate on which the LED chip is mounted on one surface side, and the conductive plate A chip mounting member formed on the one surface side through an insulating portion and having a lead pattern to which the anode electrode and the cathode electrode of the LED chip are electrically connected; a metal instrument body; a chip mounting member and the instrument body; interposed example Bei an insulating layer for electrically insulating and thermally coupling the two both during, the insulating layer is characterized by comprising formed by thermosetting the adhesive material.

この発明によれば、従来に比べてLEDチップの発光部から器具本体までの熱抵抗を小さくできて放熱性が向上し、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。また、従来と同じ光出力で使用する場合には従来に比べてLEDチップのジャンクション温度を低減できてLEDチップの寿命が長くなるという利点がある。さらに、従来のような回路基板を用意する必要がなく低コスト化を図れるという利点もある。また、この発明によれば、絶縁層は、熱硬化性の固着材により形成されてなるので、チップ搭載部材と絶縁層との密着不足によりチップ搭載部材と絶縁層との間に空隙が発生して熱抵抗が増大したり、絶縁層の経年変化によりチップ搭載部材と絶縁層との間に間隙が発生して熱抵抗が増大するのを防止することができる。 According to the present invention, the heat resistance from the light emitting part of the LED chip to the fixture body can be reduced and heat dissipation can be improved and the temperature rise of the junction temperature of the LED chip can be suppressed compared to the conventional case, so that the input power can be increased. , The light output can be increased. Further, when used with the same light output as before, there is an advantage that the junction temperature of the LED chip can be reduced and the life of the LED chip is prolonged as compared with the conventional one. Furthermore, there is an advantage that it is not necessary to prepare a conventional circuit board and the cost can be reduced . According to the present invention, since the insulating layer is formed of a thermosetting fixing material, a gap is generated between the chip mounting member and the insulating layer due to insufficient adhesion between the chip mounting member and the insulating layer. Therefore, it is possible to prevent the thermal resistance from increasing due to an increase in the thermal resistance or a gap between the chip mounting member and the insulating layer due to the aging of the insulating layer.

請求項5の発明は、請求項1ないし請求項4の発明において、前記LEDチップは、SiC基板もしくはGaN基板からなる導電性基板の主表面側にGaN系化合物半導体材料により形成された発光部を備え、導電性基板の裏面に前記アノード電極と前記カソード電極との一方が形成されたものであることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the LED chip has a light emitting portion formed of a GaN-based compound semiconductor material on a main surface side of a conductive substrate made of a SiC substrate or a GaN substrate. And one of the anode electrode and the cathode electrode is formed on the back surface of the conductive substrate.

この発明によれば、前記LEDチップの結晶成長用基板が導電性基板なので、結晶成長用基板がサファイア基板である場合に比べて結晶成長用基板の熱抵抗を低減することができ、放熱性が向上する。   According to this invention, since the substrate for crystal growth of the LED chip is a conductive substrate, the thermal resistance of the substrate for crystal growth can be reduced compared with the case where the substrate for crystal growth is a sapphire substrate, and the heat dissipation is reduced. improves.

請求項6の発明は、請求項1ないし請求項5の発明において、前記LEDチップのチップサイズよりも大きく且つ前記LEDチップと前記チップ搭載部材との間に介在して前記LEDチップと前記チップ搭載部材との線膨張率の差に起因して前記LEDチップに働く応力を緩和するサブマウント部材を備えてなることを特徴とする。   According to a sixth aspect of the present invention, in the first to fifth aspects of the present invention, the LED chip and the chip mounting are larger than the chip size of the LED chip and are interposed between the LED chip and the chip mounting member. A submount member that relieves stress acting on the LED chip due to a difference in linear expansion coefficient with the member is provided.

この発明によれば、前記LEDチップの前記導電性基板と前記サブマウント部材との線膨張率の差に起因して前記LEDチップが破損するのを防止することができ、信頼性を高めることができる。   According to the present invention, it is possible to prevent the LED chip from being damaged due to a difference in linear expansion coefficient between the conductive substrate of the LED chip and the submount member, thereby improving reliability. it can.

請求項7の発明は、請求項1ないし請求項6の発明において、前記チップ搭載部材がCuにより形成され、前記サブマウント部材がWもしくはCuWにより形成されてなることを特徴とする。   A seventh aspect of the invention is characterized in that, in the first to sixth aspects of the invention, the chip mounting member is made of Cu, and the submount member is made of W or CuW.

この発明によれば、前記サブマウント部材と前記チップ搭載部材との直接接合が可能なので、前記サブマウント部材と前記チップ搭載部材とをろう材により接合する場合に比べて前記サブマウント部材と前記チップ搭載部材との接合部の熱抵抗を低減できる。   According to the present invention, since the submount member and the chip mounting member can be directly joined, the submount member and the chip can be compared with the case where the submount member and the chip mounting member are joined by the brazing material. The thermal resistance of the joint portion with the mounting member can be reduced.

請求項8の発明は、請求項1ないし請求項7の発明において、前記固着材は、フィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シートからなることを特徴とする。 The invention of claim 8 is characterized in that, in the inventions of claims 1 to 7 , the fixing material comprises a resin sheet containing a filler made of a filler and having a low viscosity when heated.

請求項1,4の発明では、従来に比べてLEDチップの発光部から器具本体までの熱抵抗を小さくできて放熱性が向上し、LEDチップのジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れるという効果がある。   In the inventions of claims 1 and 4, since the heat resistance from the light emitting part of the LED chip to the fixture body can be reduced compared to the conventional case, the heat dissipation is improved, and the temperature rise of the junction temperature of the LED chip can be suppressed. Can be increased, and the optical output can be increased.

(実施形態1)
以下、本実施形態の照明器具について図1〜図4を参照しながら説明する。
(Embodiment 1)
Hereinafter, the lighting fixture of this embodiment is demonstrated, referring FIGS. 1-4.

本実施形態の照明器具は、例えばスポットライトとして用いられるものであり、支持台100上に固定された回転基台110に一端部が軸ねじ111を用いて結合されたアーム112に対して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体90が結合ねじ113を用いて結合されている。   The lighting fixture of the present embodiment is used as, for example, a spotlight, and is a metal (with respect to an arm 112 having one end coupled to a rotating base 110 fixed on a support base 100 using a shaft screw 111 ( For example, an instrument body 90 made of a metal having a high thermal conductivity such as Al or Cu is coupled using a coupling screw 113.

器具本体90は、一面が開口した有底筒状に形成されており、複数個のLEDチップユニット1が収納されている。ここにおいて、器具本体90は、底壁90aに各LEDチップユニット1が絶縁層80を介して実装され、開口部分が前カバー91により閉塞されている。前カバー91は、円板状のガラス板からなる透光板91aと、透光板91aを保持する円環状の窓枠91bとからなり、窓枠91bが器具本体90に対して取り付けられている。ここにおいて、本実施形態では、絶縁層80として、シリカやアルミナなどのフィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シート(例えば、溶融シリカからなるフィラーを高充填したエポキシ樹脂シートのような有機グリーンシート)からなる熱硬化性の固着材を採用しており、電気絶縁性を有するとともに熱伝導率が高く加熱時の流動性が高く凹凸面への密着性が高いので、各LEDチップユニット1と器具本体90との間に上記エポキシ樹脂シートを介在させた後で上記エポキシ樹脂シートを加熱することでLEDチップユニット1と器具本体90とを接合することができる。また、透光板91aは、ガラス基板に限らず、透光性を有する材料により形成されていればよく、また、透光板91aに各LEDチップユニット1から放射された光の配光を制御するレンズを一体に設けてもよい。   The instrument main body 90 is formed in a bottomed cylindrical shape with one surface opened, and stores a plurality of LED chip units 1. Here, in the instrument main body 90, each LED chip unit 1 is mounted on the bottom wall 90a via the insulating layer 80, and the opening portion is closed by the front cover 91. The front cover 91 includes a translucent plate 91 a made of a disk-shaped glass plate and an annular window frame 91 b that holds the translucent plate 91 a, and the window frame 91 b is attached to the instrument main body 90. . Here, in this embodiment, as the insulating layer 80, a resin sheet containing a filler made of a filler such as silica or alumina and having a low viscosity when heated (for example, an epoxy resin sheet highly filled with a filler made of fused silica) A thermosetting fixing material made of organic green sheets), which has electrical insulation properties, high thermal conductivity, high fluidity during heating, and high adhesion to uneven surfaces. The LED chip unit 1 and the instrument main body 90 can be joined by heating the epoxy resin sheet after the epoxy resin sheet is interposed between the LED chip unit 1 and the instrument main body 90. The translucent plate 91a is not limited to a glass substrate, but may be formed of a translucent material, and controls the light distribution of light emitted from each LED chip unit 1 to the translucent plate 91a. You may provide the lens to perform integrally.

器具本体90内に収納された複数個のLEDチップユニット1は、複数のリード線93により直列接続されており、複数個のLEDチップユニット1の直列回路の両端のリード線93が器具本体90の底壁90aに貫設された挿通孔90cに挿通され、図示しない電源回路から電力が供給されるようになっている。なお、電源回路としては、例えば、商用電源のような交流電源の交流出力を整流平滑するダイオードブリッジからなる整流回路と、整流回路の出力を平滑する平滑コンデンサとを備えた構成のものを採用すればよい。また、本実施形態では、器具本体90内の複数個のLEDチップユニット1を直列接続しているが、複数個のLEDチップユニット1の接続関係は特に限定するものではなく、例えば、並列接続するようにしてもよいし、直列接続と並列接続とを組み合わせてもよい。   The plurality of LED chip units 1 housed in the appliance main body 90 are connected in series by a plurality of lead wires 93, and the lead wires 93 at both ends of the series circuit of the plurality of LED chip units 1 are connected to the appliance main body 90. The power is supplied from a power supply circuit (not shown) through an insertion hole 90c provided in the bottom wall 90a. As the power supply circuit, for example, a power supply circuit having a rectifier circuit composed of a diode bridge that rectifies and smoothes the AC output of an AC power supply such as a commercial power supply and a smoothing capacitor that smoothes the output of the rectifier circuit is employed. That's fine. Moreover, in this embodiment, although the several LED chip unit 1 in the instrument main body 90 is connected in series, the connection relation of the several LED chip unit 1 does not specifically limit, For example, it connects in parallel. You may make it, and you may combine a serial connection and a parallel connection.

LEDチップユニット1は、矩形板状のLEDチップ10と、LEDチップ10のチップサイズよりも大きな矩形板状に形成されLEDチップ10が搭載されたチップ搭載部材41と、チップ搭載部材41の一側縁に連続一体に形成された短冊状のリード端子42と、チップ搭載部材41における他側縁から離間して配置されたT字状のリード端子43と、LEDチップ10を囲むように配置されLEDチップ10の側面から放射された光をLEDチップ10の前方(図1における上方)へ反射させるリフレクタ(反射器)50と、LEDチップ10を覆う形でリフレクタ50の前面側に取り付けられる保護カバー60とを備えている。   The LED chip unit 1 includes a rectangular plate-shaped LED chip 10, a chip mounting member 41 that is formed in a rectangular plate shape larger than the chip size of the LED chip 10 and on which the LED chip 10 is mounted, and one side of the chip mounting member 41. A strip-shaped lead terminal 42 that is continuously formed integrally with the edge, a T-shaped lead terminal 43 that is spaced apart from the other side edge of the chip mounting member 41, and an LED that is disposed so as to surround the LED chip 10. A reflector (reflector) 50 that reflects light emitted from the side surface of the chip 10 to the front of the LED chip 10 (upward in FIG. 1), and a protective cover 60 that is attached to the front side of the reflector 50 so as to cover the LED chip 10. And.

チップ搭載部材41と各リード端子42,43とは金属板(例えば、銅板など)からなるリードフレームを用いて形成してあり、チップ搭載部材41および各リード端子42,43は、絶縁性を有する矩形枠状の合成樹脂成形品からなる保持枠45に同時一体に成形され当該保持枠45の内側に各リード端子42,43のインナリード部42a,43aおよびチップ搭載部材41が配置されるとともに、保持枠45の外側に各リード端子42,43のアウタリード部42b,43bが配置されている。ここで、チップ搭載部材41および各リード端子42,43と器具本体90との間には上述の絶縁層80が介在しており、絶縁層80は、チップ搭載部材41および各リード端子42,43と器具本体90との両者を電気的に絶縁し且つ熱結合させる機能を有している。なお、本実施形態では、保持枠45と、チップ搭載部材41と、各リード端子42,43と、リフレクタ50と、保護カバー60と、絶縁層80とでLEDチップ10のパッケージを構成している。また、本実施形態では、絶縁層80を各LEDチップユニット1毎に設けているが、器具本体90の底壁90aよりもやや小さい1つの絶縁層80を複数個のLEDチップユニット1に対して共用してもよい。   The chip mounting member 41 and the lead terminals 42 and 43 are formed using a lead frame made of a metal plate (for example, a copper plate), and the chip mounting member 41 and the lead terminals 42 and 43 have insulating properties. The inner lead portions 42a and 43a of the lead terminals 42 and 43 and the chip mounting member 41 are disposed inside the holding frame 45 at the same time and integrally formed with a holding frame 45 made of a synthetic resin molded product having a rectangular frame shape. Outer lead portions 42 b and 43 b of the lead terminals 42 and 43 are arranged outside the holding frame 45. Here, the above-described insulating layer 80 is interposed between the chip mounting member 41 and the lead terminals 42 and 43 and the instrument main body 90, and the insulating layer 80 includes the chip mounting member 41 and the lead terminals 42 and 43. And the instrument body 90 are electrically insulated and thermally coupled. In the present embodiment, the holding frame 45, the chip mounting member 41, the lead terminals 42 and 43, the reflector 50, the protective cover 60, and the insulating layer 80 constitute a package of the LED chip 10. . In this embodiment, the insulating layer 80 is provided for each LED chip unit 1, but one insulating layer 80 slightly smaller than the bottom wall 90 a of the instrument body 90 is provided for the plurality of LED chip units 1. May be shared.

上記リードフレームの材料は銅に限らず、例えば、リン青銅などでもよい。また、本実施形態では、チップ搭載部材41および各リード端子42,43を保持枠45に同時一体に成形してあるが、保持枠45は必ずしも設ける必要はなく、チップ搭載部材41とリード端子42とを連続一体に形成する必要もない。ただし、チップ搭載部材41とリード端子42とを連続一体に形成するとともに上述の保持枠45を備えている場合には、組立時などにおいてLEDチップユニット1を個別部品として取り扱いやすくなり、各LEDチップユニット1を器具本体90に実装する前に、容易に個別の検査を行うことができるという利点がある。   The material of the lead frame is not limited to copper, and may be phosphor bronze, for example. In this embodiment, the chip mounting member 41 and the lead terminals 42 and 43 are formed integrally with the holding frame 45 at the same time. However, the holding frame 45 is not necessarily provided, and the chip mounting member 41 and the lead terminal 42 are not necessarily provided. There is also no need to form a continuous integral. However, when the chip mounting member 41 and the lead terminal 42 are continuously formed integrally and the above-described holding frame 45 is provided, the LED chip unit 1 can be easily handled as an individual component at the time of assembly or the like. There is an advantage that an individual test can be easily performed before the unit 1 is mounted on the instrument main body 90.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light emitting portion 12 formed of a GaN-based compound semiconductor material and having, for example, a double hetero structure is formed on the main surface side of the conductive substrate 11 by an epitaxial growth method (for example, MOVPE method). ), A cathode electrode (n electrode) (not shown) is formed on the back surface of the conductive substrate 11, and an anode electrode (p electrode) (not shown) is formed on the surface of the light emitting portion 12 (the outermost surface on the main surface side of the conductive substrate 11). ) Is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed.

なお、本実施形態では、上記一方のリード端子42がカソード側リード端子を構成し、上記他方のリード端子43がアノード側リード端子を構成している。また、本実施形態では、LEDチップ10の発光部12が導電性基板11よりもチップ搭載部材41から離れて側となるようにチップ搭載部材41に搭載されているが、LEDチップ10の発光部12が導電性基板11よりもチップ搭載部材41に近い側となるようにチップ搭載部材41に搭載するようにしてもよい。光取り出し効率を考えた場合には、発光部12をチップ搭載部材41から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12をチップ搭載部材41に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   In the present embodiment, the one lead terminal 42 constitutes a cathode side lead terminal, and the other lead terminal 43 constitutes an anode side lead terminal. In the present embodiment, the LED chip 10 is mounted on the chip mounting member 41 such that the light emitting unit 12 of the LED chip 10 is farther away from the chip mounting member 41 than the conductive substrate 11. You may make it mount in the chip mounting member 41 so that 12 may become the side near the chip mounting member 41 rather than the electroconductive board | substrate 11. FIG. Considering the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the chip mounting member 41. However, in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the chip mounting member 41, the light extraction loss does not become too large.

また、リフレクタ50は、円形状に開口した枠状の形状であって、LEDチップ10の厚み方向においてLEDチップ10から離れるに従って開口面積が大きくなる形状に形成されており、絶縁性を有するシート状の接着フィルムからなる固着材55により各リード端子42,43と固着されている。なお、リフレクタ50および固着材55の外周形状は、保持枠45の内周形状よりもやや小さな矩形状に形成されている。   In addition, the reflector 50 has a circular frame-like shape and is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10, and has a sheet shape having an insulating property. The lead terminals 42 and 43 are fixed by a fixing material 55 made of an adhesive film. The outer peripheral shape of the reflector 50 and the fixing material 55 is formed in a rectangular shape that is slightly smaller than the inner peripheral shape of the holding frame 45.

ここにおいて、リフレクタ50の材料としては、LEDチップ10から放射される光(ここでは、青色光)に対する反射率が比較的大きな材料(例えば、Alなど)を採用すればよい。なお、固着材55には、リフレクタ50の開口部に対応する円形状の開口部55aが形成されている。また、リフレクタ50の内側には、LEDチップ10を封止する透明な封止樹脂(例えば、シリコーン樹脂など)をポッティングすることが望ましい。   Here, as a material of the reflector 50, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) may be employed. Note that a circular opening 55 a corresponding to the opening of the reflector 50 is formed in the fixing material 55. Moreover, it is desirable to pot a transparent sealing resin (for example, silicone resin) for sealing the LED chip 10 inside the reflector 50.

保護カバー60は、LEDチップ10の厚み方向に沿った中心線上に中心が位置するように配置されるドーム状のカバー部62と、カバー部62の開口部の周縁から側方に連続一体に突出したフランジ部61とを備え、フランジ部61におけるリフレクタ50側の面の周部に環状の位置決めリブ61aが突設されており、リフレクタ50に対して安定して位置決めすることができるようになっている。なお、保護カバー60は、リフレクタ50に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   The protective cover 60 has a dome-shaped cover portion 62 disposed so that its center is located on the center line along the thickness direction of the LED chip 10, and continuously protrudes sideways from the periphery of the opening of the cover portion 62. An annular positioning rib 61a is projected from the peripheral portion of the surface of the flange portion 61 on the reflector 50 side so that the flange portion 61 can be stably positioned with respect to the reflector 50. Yes. Note that the protective cover 60 may be bonded to the reflector 50 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like).

また、保護カバー60は、シリコーンのような透光性材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態におけるLEDチップユニット1は、保護カバー60が、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を発光する色変換部を兼ねており、当該LEDチップユニット1全体として、LEDチップ10から放射された青色光と黄色蛍光体から放射された光との合成光からなる白色の光を出力する白色LEDを構成している。なお、保護カバー60の材料として用いる透光性材料は、シリコーンに限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、保護カバー60の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。また、LEDチップ10の発光色がLEDチップユニット1の所望の発光色と同じ場合には透光性材料に蛍光体を混合する必要はない。   In addition, the protective cover 60 is a mixture of a translucent material such as silicone and a particulate yellow phosphor that emits broad yellow light that is excited by the blue light emitted from the LED chip 10. It is composed of a molded product. Therefore, the LED chip unit 1 in the present embodiment also serves as a color conversion unit in which the protective cover 60 is excited by the light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10. The LED chip unit 1 as a whole constitutes a white LED that outputs white light composed of combined light of blue light emitted from the LED chip 10 and light emitted from the yellow phosphor. The translucent material used as the material of the protective cover 60 is not limited to silicone, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the translucent material used as the material of the protective cover 60 is not limited to the yellow phosphor, and for example, white light can be obtained by mixing a red phosphor and a green phosphor. Further, when the light emission color of the LED chip 10 is the same as the desired light emission color of the LED chip unit 1, it is not necessary to mix a phosphor with the light transmissive material.

ところで、本実施形態では、LEDチップ10として、上述のように発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には下記表1から分かるように、上記特許文献2のように結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く熱抵抗が小さい。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in this embodiment, the blue LED chip whose emission color is blue is adopted as the LED chip 10 as described above, and the SiC substrate is adopted as the conductive substrate 11, but GaN is used instead of the SiC substrate. A substrate may be used. When a SiC substrate or a GaN substrate is used, as can be seen from Table 1 below, when a sapphire substrate that is an insulator is used as a substrate for crystal growth as in Patent Document 2 above. In comparison, the crystal growth substrate has a high thermal conductivity and a low thermal resistance. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

Figure 0005054331
Figure 0005054331

また、LEDチップ10は、上述のチップ搭載部材41に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10とチップ搭載部材41との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して搭載されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱をチップ搭載部材41においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有しており、チップ搭載部材41におけるLEDチップ10側の表面の面積はLEDチップにおけるチップ搭載部材41側の表面の面積よりも十分に大きいことが望ましい。例えば、0.3〜1.0mm角のLEDチップ1から廃熱を効率良く行うためには、チップ搭載部材41と絶縁層80との接触面積を大きくし、且つ、LEDチップ10の熱が広範囲に亘って均一に熱伝導するようにして熱抵抗を小さくすることが好ましく、上記リードフレームを用いて形成されるチップ搭載部材41におけるLEDチップ10側の表面の面積をLEDチップ10におけるチップ搭載部材41側の表面の面積の10倍以上とすることが望ましい。ここにおいて、サブマウント部材30は、上記応力を緩和する機能を有していればよく、厚み寸法を上記特許文献1〜3に記載されたLEDユニットにおける回路基板の厚み寸法に比べて小さくすることができるから、熱伝導率が比較的大きな材料を採用することにより、熱抵抗を小さくすることができる。   Further, the LED chip 10 is formed on the above-described chip mounting member 41 in a rectangular plate shape having a size larger than the chip size of the LED chip 10, and is caused by a difference in linear expansion coefficient between the LED chip 10 and the chip mounting member 41. The LED chip 10 is mounted via a submount member 30 that relieves stress. The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 in the chip mounting member 41. The surface area of the chip mounting member 41 on the LED chip 10 side is desirably sufficiently larger than the surface area of the LED chip on the chip mounting member 41 side. For example, in order to efficiently perform waste heat from the 0.3 to 1.0 mm square LED chip 1, the contact area between the chip mounting member 41 and the insulating layer 80 is increased and the heat of the LED chip 10 is wide. It is preferable to reduce the thermal resistance so as to conduct heat uniformly over the entire area, and the area of the surface on the LED chip 10 side of the chip mounting member 41 formed using the lead frame is defined as the chip mounting member in the LED chip 10. It is desirable that the surface area on the 41st side be 10 times or more. Here, the submount member 30 only needs to have the function of relieving the stress, and the thickness dimension is made smaller than the thickness dimension of the circuit board in the LED unit described in Patent Documents 1 to 3 above. Therefore, the heat resistance can be reduced by adopting a material having a relatively large thermal conductivity.

本実施形態では、サブマウント部材30の材料としてCuWを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30およびチップ搭載部材41を介して上記一方のリード端子42のインナリード部42aと電気的に接続され、上記アノード電極が金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して上記他方のリード端子43のインナリード部43aと電気的に接続されている。また、各リード端子42,43のアウタリード部42b,43bには、それぞれ上述のリード線93が半田からなる接合部95を介して電気的に接続されている。   In this embodiment, CuW is adopted as the material of the submount member 30. In the LED chip 10, the cathode electrode has the inner lead portion of the one lead terminal 42 via the submount member 30 and the chip mounting member 41. 42a, and the anode electrode is electrically connected to the inner lead portion 43a of the other lead terminal 43 through a bonding wire 14 made of a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.). Yes. The lead wires 93 are electrically connected to the outer lead portions 42b and 43b of the lead terminals 42 and 43 through joints 95 made of solder, respectively.

サブマウント部材30の材料はCuWに限らず、例えば下記表2から分かるように、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、W、AlN、複合SiC、Siなどを採用してもよい。ただし、サブマウント部材30としてAlNや複合SiCのような絶縁体を採用する場合には、例えば、サブマウント部材30におけるLEDチップ10側の表面に上記アノード電極と接合される適宜の導体パターンを設けておき、当該導体パターンと上記一方のリード端子42のインナリード部42aとをボンディングワイヤを介して電気的に接続すればよい。   The material of the submount member 30 is not limited to CuW. For example, as can be seen from Table 2 below, the material of the submount member 30 is a material whose linear expansion coefficient is relatively close to 6H—SiC which is the material of the conductive substrate 11 and whose thermal conductivity is relatively high. For example, W, AlN, composite SiC, Si, or the like may be employed. However, when an insulator such as AlN or composite SiC is adopted as the submount member 30, for example, an appropriate conductor pattern to be bonded to the anode electrode is provided on the surface of the submount member 30 on the LED chip 10 side. The conductor pattern and the inner lead portion 42a of the one lead terminal 42 may be electrically connected via a bonding wire.

Figure 0005054331
Figure 0005054331

ここにおいて、チップ搭載部材41の材料がCuである場合、サブマウント部材30として、CuWもしくはWを採用すれば、サブマウント部材30とチップ搭載部材41とを直接接合することが可能なので、例えば下記表3に示すように、サブマウント部材30とチップ搭載部材41とをろう材を用いて接合する場合に比べて、サブマウント部材30とチップ搭載部材41との接合面積を大きくできてサブマウント部材30とチップ搭載部材41との接合部の熱抵抗を低減できる。なお、LEDチップ10とサブマウント部材30とは、AuSn、SnAgCuなどの鉛フリー半田を用いて接合すればよいが、AuSnを用いて接合する場合には、サブマウント部材30における接合表面にあるかじめAuまたはAgからなる金属層を形成する前処理が必要である。   Here, when the material of the chip mounting member 41 is Cu, if CuW or W is adopted as the submount member 30, the submount member 30 and the chip mounting member 41 can be directly joined. As shown in Table 3, compared to the case where the submount member 30 and the chip mounting member 41 are bonded using a brazing material, the bonding area between the submount member 30 and the chip mounting member 41 can be increased and the submount member can be increased. The thermal resistance of the joint between 30 and the chip mounting member 41 can be reduced. The LED chip 10 and the submount member 30 may be bonded using lead-free solder such as AuSn or SnAgCu. However, when bonding using AuSn, the LED chip 10 and the submount member 30 are on the bonding surface of the submount member 30. Therefore, a pretreatment for forming a metal layer made of Au or Ag is necessary.

Figure 0005054331
Figure 0005054331

また、サブマウント部材30の材料としてWを採用してサブマウント部材30とチップ搭載部材41とを直接接合した場合、下記表4から分かるように、サブマウント部材30とチップ搭載部材41とを銀ろうを用いて接合した場合に比べて熱伝導率が大きくなり、熱抵抗を低減できる。なお、チップ搭載部材41の材料がCuであり、サブマウント部材30の材料としてAlN、複合SiCなどを採用した場合には、チップ搭載部材41とサブマウント部材30とは、AuSn、SnAgCuなどの鉛フリー半田を用いて接合すればよいが、AuSnを用いて接合する場合には、チップ搭載部材41における接合表面にあるかじめAuまたはAgからなる金属層を形成する前処理が必要である。   Further, when W is used as the material of the submount member 30 and the submount member 30 and the chip mounting member 41 are directly joined, as shown in Table 4 below, the submount member 30 and the chip mounting member 41 are made of silver. Compared with the case where it joins using brazing, thermal conductivity becomes large and thermal resistance can be reduced. When the material of the chip mounting member 41 is Cu and AlN, composite SiC, or the like is adopted as the material of the submount member 30, the chip mounting member 41 and the submount member 30 are made of lead such as AuSn and SnAgCu. Bonding may be performed using free solder. However, when bonding using AuSn, pretreatment for forming a metal layer made of Au or Ag on the bonding surface of the chip mounting member 41 is necessary.

Figure 0005054331
Figure 0005054331

以上説明した本実施形態の照明器具では、点灯時に各LEDチップユニット1で発生した熱を図12や図13に示した回路基板200を通すことなく絶縁層80を介して金属製の器具本体90へ伝熱して放熱することができるので、図12や図13に示したLEDユニットの回路基板200を器具本体90の底壁90aにゴムシート状の放熱シートを介在させた構成や絶縁層80を介して熱結合させる構成に比べて、LEDチップ10の発光部12から器具本体90までの距離および熱抵抗を小さくできて放熱性が向上し、LEDチップ10の発光部12のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。また、従来の照明器具の構成と同じ光出力で使用する場合には従来の照明器具の構成に比べてLEDチップ10のジャンクション温度を低減できてLEDチップ10の寿命が長くなるという利点がある。さらに、従来のような回路基板200を用意する必要がなく低コスト化を図れるという利点や、LEDチップユニット1の配置の自由度が高くLEDチップユニット1の個数の変更やレイアウト変更が容易になるという利点もある。   In the lighting fixture of this embodiment described above, the heat generated in each LED chip unit 1 during lighting is passed through the insulating layer 80 without passing through the circuit board 200 shown in FIGS. The circuit board 200 of the LED unit shown in FIG. 12 and FIG. 13 can be dissipated to the bottom wall 90a of the instrument main body 90, and the insulating layer 80 can be provided with a rubber sheet-like heat dissipation sheet interposed therebetween. Compared to the configuration in which the heat is coupled via the LED chip 10, the distance and the thermal resistance from the light emitting portion 12 of the LED chip 10 to the fixture main body 90 can be reduced to improve heat dissipation, and the junction temperature of the light emitting portion 12 of the LED chip 10 is increased. Therefore, the input power can be increased and the optical output can be increased. Moreover, when using it by the same light output as the structure of the conventional lighting fixture, compared with the structure of the conventional lighting fixture, there exists an advantage that the junction temperature of the LED chip 10 can be reduced and the lifetime of LED chip 10 becomes long. Furthermore, there is no need to prepare a circuit board 200 as in the prior art, and the cost can be reduced, and the degree of freedom of arrangement of the LED chip units 1 is high, and the number of LED chip units 1 can be easily changed and the layout can be easily changed. There is also an advantage.

ここにおいて、上述のようにLEDチップ10とチップ搭載部材41との間に介在させているサブマウント部材30は、LEDチップ10とチップ搭載部材41との線膨張率の差が比較的小さい場合には必ずしも設ける必要はなく、LEDチップ10とチップ搭載部材41との間にサブマウント部材30を介在させない場合の方が、LEDチップ10と金属製の器具本体90の底壁90aとの間の距離が短くなって、LEDチップ10の発光部12から器具本体90までの熱抵抗をより小さくすることができ、放熱性がさらに向上するので、光出力のより一層の高出力化を図れる。   Here, the submount member 30 interposed between the LED chip 10 and the chip mounting member 41 as described above is used when the difference in linear expansion coefficient between the LED chip 10 and the chip mounting member 41 is relatively small. Is not necessarily provided, and the distance between the LED chip 10 and the bottom wall 90a of the metal instrument body 90 is greater when the submount member 30 is not interposed between the LED chip 10 and the chip mounting member 41. Becomes shorter, the thermal resistance from the light emitting part 12 of the LED chip 10 to the instrument body 90 can be further reduced, and the heat dissipation is further improved, so that the light output can be further increased.

ところで、上述の絶縁層80として上述の放熱シート(熱伝導シート)もしくは絶縁シートを採用した場合には、チップ搭載部材41および各リード端子42,43および保持枠45と絶縁層80との密着不足により図5に示すように両者の間に空隙85が発生して熱抵抗が増大したりLEDチップユニット1ごとに器具本体90までの熱抵抗がばらついてしまうので、保持枠45に荷重をかけるときのトルクを管理する必要がある。また、上述の絶縁層80として絶縁グリースを採用した場合には、図6(a)に示すようにチップ搭載部材41および各リード端子42,43および保持枠45と絶縁層80との間に上述のような空隙85が形成されるのを防ぐことができるが、絶縁層80の経年変化(粘度変化、収縮など)により図6(b)に示すように両者の間に間隙86が発生して熱抵抗が増大したり、LEDチップユニット1ごとに器具本体90までの熱抵抗がばらついてしまう恐れがある。   By the way, when the above-described heat dissipation sheet (thermal conductive sheet) or insulating sheet is adopted as the insulating layer 80, the chip mounting member 41, the lead terminals 42 and 43, the holding frame 45, and the insulating layer 80 are insufficiently adhered. As shown in FIG. 5, a gap 85 is generated between the two to increase the thermal resistance, or the thermal resistance to the instrument body 90 varies for each LED chip unit 1. Therefore, when a load is applied to the holding frame 45 It is necessary to manage the torque. Further, when insulating grease is employed as the insulating layer 80, the chip mounting member 41, the lead terminals 42 and 43, and the holding frame 45 and the insulating layer 80 are interposed as shown in FIG. However, due to the secular change (viscosity change, shrinkage, etc.) of the insulating layer 80, a gap 86 is generated between them as shown in FIG. 6 (b). There is a possibility that the thermal resistance increases or the thermal resistance up to the instrument main body 90 varies for each LED chip unit 1.

これに対して、本実施形態では、絶縁層80として上述の熱硬化性の固着材(例えば、シリカやアルミナなどのフィラーを高充填したエポキシ樹脂シート)を採用しており、凹凸面への密着性が高いので、密着信頼性が向上するとともに経年変化が少なくなり、チップ搭載部材41と絶縁層80との密着不足によりチップ搭載部材41と絶縁層80との間に空隙85が発生して熱抵抗が増大したり、絶縁層80の経年変化によりチップ搭載部材41と絶縁層80との間に間隙86が発生して熱抵抗が増大するのを防止することができる。なお、絶縁層80における熱伝達のための有効接触面積を25mm、絶縁層80の厚みを0.1mmとした場合、絶縁層80の熱抵抗を1K/W以下に抑制するには、絶縁層80の熱伝導率が4W/m・K以上である条件を満足する必要があるが、上述の有機グリーンシートを採用すれば、この条件を満足することもできる。 On the other hand, in the present embodiment, the above-described thermosetting fixing material (for example, an epoxy resin sheet highly filled with a filler such as silica or alumina) is employed as the insulating layer 80, and the insulating layer 80 adheres to the uneven surface. Since the contact reliability is improved, the secular change is reduced, and the gap 85 between the chip mounting member 41 and the insulating layer 80 is generated due to insufficient contact between the chip mounting member 41 and the insulating layer 80, resulting in heat. It is possible to prevent the thermal resistance from increasing due to the increase in resistance or the occurrence of the gap 86 between the chip mounting member 41 and the insulating layer 80 due to aging of the insulating layer 80. In order to suppress the thermal resistance of the insulating layer 80 to 1 K / W or less when the effective contact area for heat transfer in the insulating layer 80 is 25 mm 2 and the thickness of the insulating layer 80 is 0.1 mm, the insulating layer Although it is necessary to satisfy the condition that the thermal conductivity of 80 is 4 W / m · K or more, if the above-described organic green sheet is employed, this condition can also be satisfied.

(実施形態2)
本実施形態のLEDを用いた照明器具の基本構成は実施形態1と略同じであって、図7に示すように、LEDチップユニット1における保持枠45の形状が若干相違する。なお、他の構成は実施形態1と同じなので図示および説明を省略する。
(Embodiment 2)
The basic configuration of the luminaire using the LED of this embodiment is substantially the same as that of the first embodiment, and the shape of the holding frame 45 in the LED chip unit 1 is slightly different as shown in FIG. Since other configurations are the same as those of the first embodiment, illustration and description thereof are omitted.

ところで、実施形態1では、LEDチップユニット1のチップ搭載部材41および各リード端子42,43における器具本体90の底壁90a側の各表面と保持枠45における器具本体90の底壁90a側の表面とが略面一となっているので、絶縁層80の材料して例えばエポキシ樹脂などの接着剤を採用した場合に、保持枠45にかける荷重の大きさによっては絶縁層80が図8(b)に示すようにはみ出してしまい、チップ搭載部材41および各リード端子42,43と器具本体90とを電気的に絶縁できなくなってしまう可能性がある。   By the way, in Embodiment 1, each surface on the bottom wall 90a side of the instrument body 90 in the chip mounting member 41 and each of the lead terminals 42 and 43 of the LED chip unit 1 and the surface on the bottom wall 90a side of the instrument body 90 in the holding frame 45. Are substantially flush with each other, and when an insulating material such as an epoxy resin is used as the material of the insulating layer 80, the insulating layer 80 may be formed depending on the load applied to the holding frame 45 as shown in FIG. ) And the chip mounting member 41 and the lead terminals 42 and 43 and the instrument main body 90 may not be electrically insulated.

これに対して、本実施形態における保持枠45は、図8(a)に示すように器具本体90の底壁90aとの対向面における4つの角部それぞれに、チップ搭載部材41および各リード端子42,43と器具本体90との間の絶縁距離を確保する凸部45が突設されている。なお、凸部45の突出寸法は絶縁層80として採用する有機グリーンシートの厚み寸法よりも小さく設定してある。   On the other hand, as shown in FIG. 8A, the holding frame 45 in the present embodiment has a chip mounting member 41 and each lead terminal at each of four corners on the surface facing the bottom wall 90a of the instrument body 90. A convex portion 45 is secured to secure an insulation distance between 42 and 43 and the instrument main body 90. In addition, the protrusion dimension of the convex part 45 is set smaller than the thickness dimension of the organic green sheet employ | adopted as the insulating layer 80. FIG.

しかして、本実施形態では、絶縁層80の状態によらず、チップ搭載部材41および各リード端子42,43と器具本体90とを確実に電気的に絶縁することができる。すなわち、本実施形態では、組立時に器具本体90の底壁90aとチップ搭載部材41および各リード端子42,43との間に絶縁層80として用いる有機グリーンシートを介在させた後で荷重をかけたときに図8(a)に示すように有機グリーンシートがはみ出したりしても、チップ搭載部材41および各リード端子42,43と器具本体90の底壁90aとの間の距離が凸部45の突出寸法よりも小さくなることがないので、チップ搭載部材41および各リード端子42,43と器具本体90とをより確実に電気的に絶縁することができる。   Thus, in this embodiment, the chip mounting member 41 and the lead terminals 42 and 43 and the instrument body 90 can be reliably electrically insulated regardless of the state of the insulating layer 80. That is, in this embodiment, a load is applied after an organic green sheet used as the insulating layer 80 is interposed between the bottom wall 90a of the instrument body 90 and the chip mounting member 41 and the lead terminals 42 and 43 during assembly. Even when the organic green sheet protrudes as shown in FIG. 8A, the distance between the chip mounting member 41 and the lead terminals 42 and 43 and the bottom wall 90a of the instrument main body 90 is Since it does not become smaller than a protrusion dimension, the chip | tip mounting member 41 and each lead terminal 42 and 43 and the instrument main body 90 can be electrically insulated more reliably.

(実施形態3)
本実施形態のLEDを用いた照明器具の構成は実施形態1と略同じであって、図9〜図11に示すように、LEDチップユニット1の構造が相違している。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 3)
The structure of the lighting fixture using LED of this embodiment is as substantially the same as Embodiment 1, Comprising: As shown in FIGS. 9-11, the structure of the LED chip unit 1 is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態におけるLEDチップユニット1では、実施形態1におけるチップ搭載部材41および各リード端子42,43および保持枠45を設ける代わりに、LEDチップ10が一面側に搭載される矩形板状の導電性プレート71および当該導電性プレート71の上記一面側に絶縁部72を介して形成されLEDチップ10のアノード電極およびカソード電極がそれぞれ電気的に接続されるリードパターン73,73を有するチップ搭載部材70を備えており、導電性プレート71とLEDチップ10との間にサブマウント部材30を介在させ、導電性プレート71と器具本体90の底壁90aとの間に有機グリーンシートからなる絶縁層80を介在させている点などが相違する。   In the LED chip unit 1 in the present embodiment, instead of providing the chip mounting member 41, the lead terminals 42 and 43, and the holding frame 45 in the first embodiment, a rectangular plate-like conductive material on which the LED chip 10 is mounted on one surface side. A chip mounting member 70 having lead patterns 73 and 73 formed on the one surface side of the plate 71 and the conductive plate 71 via the insulating portion 72 and electrically connected to the anode electrode and the cathode electrode of the LED chip 10, respectively. The submount member 30 is interposed between the conductive plate 71 and the LED chip 10, and the insulating layer 80 made of an organic green sheet is interposed between the conductive plate 71 and the bottom wall 90 a of the instrument body 90. Differences are made.

導電性プレート71の材料としては、例えば、銅、リン青銅などの導電性を有し熱伝導率が比較的高い材料を採用すればよく、リードパターン73,73の材料としては、例えば、銅を採用すればよい。また、チップ搭載部材70の絶縁部72の材料としては、例えば、ガラスエポキシ樹脂、ポリイミド樹脂、フェノール樹脂などの絶縁性を有する樹脂を採用すればよい。ここにおいて、チップ搭載部材70は、絶縁部72の中央部に導電性プレート71の上記一面の一部を露出させる矩形状の窓孔75が形成されており、LEDチップ10が窓孔75の内側で導電性プレート71の上記一面側に接合されたサブマウント部材30を介して導電性プレート71に搭載されている。なお、導電性プレート71は、LEDチップ10を搭載するリードフレームと同様の厚みを有していればよいから、厚み寸法を上記特許文献1〜3に記載されたLEDユニットにおける回路基板の厚み寸法に比べて小さくすることができる。   As the material of the conductive plate 71, for example, a material having conductivity and relatively high thermal conductivity such as copper and phosphor bronze may be adopted. As the material of the lead patterns 73 and 73, for example, copper is used. Adopt it. Further, as a material of the insulating portion 72 of the chip mounting member 70, for example, a resin having an insulating property such as a glass epoxy resin, a polyimide resin, or a phenol resin may be employed. Here, in the chip mounting member 70, a rectangular window hole 75 exposing a part of the one surface of the conductive plate 71 is formed at the center of the insulating part 72, and the LED chip 10 is located inside the window hole 75. The conductive plate 71 is mounted on the conductive plate 71 via the submount member 30 joined to the one surface side. In addition, since the electroconductive plate 71 should just have the thickness similar to the lead frame which mounts the LED chip 10, the thickness dimension is the thickness dimension of the circuit board in the LED unit described in the said patent documents 1-3. It can be made smaller than

また、本実施形態では、LEDチップ10の一表面側(図10における上面側)のアノード電極(図示せず)がボンディングワイヤW1を介して一方のリードパターン73の一端部(インナリード部)に電気的に接続され、LEDチップ10の他表面側(図10における下面側)のカソード電極(図示せず)がボンディングワイヤW2を介して他方のリードパターン73の一端部(インナリード部)に電気的に接続され、各リードパターン73の他端部がそれぞれリード線93に半田からなる接合部95を介して電気的に接続されている。なお、本実施形態では、上述のチップ搭載部材70とリフレクタ50と保護カバー60とでLEDチップ10のパッケージを構成している。   In this embodiment, an anode electrode (not shown) on one surface side (upper surface side in FIG. 10) of the LED chip 10 is connected to one end portion (inner lead portion) of one lead pattern 73 via the bonding wire W1. The cathode electrode (not shown) on the other surface side (the lower surface side in FIG. 10) of the LED chip 10 is electrically connected to one end portion (inner lead portion) of the other lead pattern 73 via the bonding wire W2. The other end of each lead pattern 73 is electrically connected to the lead wire 93 via a joint 95 made of solder. In the present embodiment, the chip mounting member 70, the reflector 50, and the protective cover 60 constitute the LED chip 10 package.

以上説明した本実施形態の照明器具では、点灯時に各LEDチップユニット1で発生した熱を図12や図13に示した回路基板200を通すことなく絶縁層80を介して金属製の器具本体90へ伝熱して放熱することができるので、図12や図13に示したLEDユニットの回路基板200を器具本体90の底壁90aにゴムシート状の放熱シートを介在させた構成や絶縁層80を介して熱結合させる構成に比べて、LEDチップ10の発光部12から器具本体90までの距離および熱抵抗を小さくできて放熱性が向上し、LEDチップ10の発光部12のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。また、従来の照明器具の構成と同じ光出力で使用する場合には従来の照明器具の構成に比べてLEDチップ10のジャンクション温度を低減できてLEDチップ10の寿命が長くなるという利点がある。さらに、従来のような回路基板200を用意する必要がなく低コスト化を図れるという利点や、LEDチップユニット1の配置の自由度が高くLEDチップユニット1の個数の変更やレイアウト変更が容易になるという利点もある。   In the lighting fixture of this embodiment described above, the heat generated in each LED chip unit 1 during lighting is passed through the insulating layer 80 without passing through the circuit board 200 shown in FIGS. The circuit board 200 of the LED unit shown in FIG. 12 and FIG. 13 can be dissipated to the bottom wall 90a of the instrument main body 90, and the insulating layer 80 can be provided with a rubber sheet-like heat dissipation sheet interposed therebetween. Compared to the configuration in which the heat is coupled via the LED chip 10, the distance and the thermal resistance from the light emitting portion 12 of the LED chip 10 to the fixture main body 90 can be reduced to improve heat dissipation, and the junction temperature of the light emitting portion 12 of the LED chip 10 is increased. Therefore, the input power can be increased and the optical output can be increased. Moreover, when using it by the same light output as the structure of the conventional lighting fixture, compared with the structure of the conventional lighting fixture, there exists an advantage that the junction temperature of the LED chip 10 can be reduced and the lifetime of LED chip 10 becomes long. Furthermore, there is no need to prepare a circuit board 200 as in the prior art, and the cost can be reduced, and the degree of freedom of arrangement of the LED chip units 1 is high, and the number of LED chip units 1 can be easily changed and the layout can be easily changed. There is also an advantage.

ところで、本実施形態の照明器具では、絶縁層80として用いる有機グリーンシートの平面サイズを導電性プレート71の平面サイズよりも大きく設定すれば、有機グリーンシートと導電性プレート71とが同じ平面サイズに形成されている場合に比べて、導電性プレート71と金属製の器具本体90との間の沿面距離を長くすることができ、照明器具用の光源として用いる場合の耐雷サージ性を高めることができる(ただし、一般的に屋内用の照明器具と屋外用の照明器具とで要求される沿面距離は異なり、屋外用の照明器具の方がより長い沿面距離を要求される)。ここにおいて、有機グリーンシートの厚みについては、耐雷サージ性の要求耐圧に応じて厚みを設計する必要があるが、熱抵抗を低減する観点からはより薄く設定することが望ましい。したがって、有機グリーンシートに関しては、厚みを設定した上で、沿面距離の要求を満足できるように平面サイズを設定すればよい。   By the way, in the lighting fixture of this embodiment, if the plane size of the organic green sheet used as the insulating layer 80 is set larger than the plane size of the conductive plate 71, the organic green sheet and the conductive plate 71 have the same plane size. Compared with the case where it is formed, the creeping distance between the conductive plate 71 and the metal fixture body 90 can be increased, and lightning surge resistance when used as a light source for a lighting fixture can be improved. (However, creepage distances generally required for indoor lighting fixtures and outdoor lighting fixtures are different, and outdoor lighting fixtures require longer creepage distances). Here, as for the thickness of the organic green sheet, it is necessary to design the thickness in accordance with the required withstand voltage for lightning surge resistance, but it is desirable to set it thinner from the viewpoint of reducing the thermal resistance. Therefore, regarding the organic green sheet, after setting the thickness, the plane size may be set so as to satisfy the creepage distance requirement.

また、上述のようにLEDチップ10とチップ搭載部材70の導電性プレート71との間に介在させているサブマウント部材30は、LEDチップ10と導電性プレート71との線膨張率の差が比較的小さい場合には必ずしも設ける必要はなく、LEDチップ10と導電性プレート71との間にサブマウント部材30を介在させない場合の方が、LEDチップ10と金属製の器具本体90の底壁90aとの間の距離が短くなって、LEDチップ10の発光部12から器具本体90までの熱抵抗をより小さくすることができ、放熱性がさらに向上するので、光出力のより一層の高出力化を図れる。   Further, as described above, the submount member 30 interposed between the LED chip 10 and the conductive plate 71 of the chip mounting member 70 has a difference in linear expansion coefficient between the LED chip 10 and the conductive plate 71. If the submount member 30 is not interposed between the LED chip 10 and the conductive plate 71, the LED chip 10 and the bottom wall 90 a of the metal instrument body 90 are not necessarily provided. The distance between the LED chip 10 is shortened, the thermal resistance from the light emitting part 12 of the LED chip 10 to the instrument body 90 can be further reduced, and the heat dissipation is further improved, so that the light output is further increased. I can plan.

また、本実施形態でも、組立時などにおいてLEDチップユニット1を個別部品として取り扱いやすくなり、各LEDチップユニット1を器具本体90に実装する前に、容易に個別の検査を行うことができるという利点がある。   Also in this embodiment, the LED chip unit 1 can be easily handled as an individual part during assembly or the like, and the individual inspection can be easily performed before each LED chip unit 1 is mounted on the instrument main body 90. There is.

実施形態1を示す要部概略断面図である。FIG. 2 is a schematic cross-sectional view of a main part showing Embodiment 1. 同上を示し、一部破断した概略側面図である。It is the schematic side view which showed the same and was partly fractured. 同上における要部概略斜視図である。It is a principal part schematic perspective view in the same as the above. 同上における要部概略分解斜視図である。It is a principal part disassembled perspective view in the same as the above. 同上の要部説明図である。It is principal part explanatory drawing same as the above. 同上の要部説明図である。It is principal part explanatory drawing same as the above. 実施形態2における要部概略分解斜視図である。FIG. 6 is a schematic exploded perspective view of main parts in a second embodiment. 同上の要部説明図である。It is principal part explanatory drawing same as the above. 実施形態3を示す要部概略斜視図である。FIG. 6 is a schematic perspective view showing a main part of a third embodiment. 同上を示す要部概略断面図である。It is a principal part schematic sectional drawing which shows the same as the above. 同上における要部概略分解斜視図である。It is a principal part disassembled perspective view in the same as the above. 従来例を示すLEDユニットの概略断面図である。It is a schematic sectional drawing of the LED unit which shows a prior art example. 他の従来例を示すLEDユニットの概略構成図である。It is a schematic block diagram of the LED unit which shows another prior art example.

符号の説明Explanation of symbols

1 LEDチップユニット
10 LEDチップ
11 導電性基板
12 発光部
14 ボンディングワイヤ
30 サブマウント部材
41 チップ搭載部材
42 リード端子(カソード側リード端子)
43 リード端子(アノード側リード端子)
50 リフレクタ
60 保護カバー
70 チップ搭載部材
71 導電性プレート
72 絶縁部
73 リードパターン
80 絶縁層(樹脂シート)
90 器具本体
DESCRIPTION OF SYMBOLS 1 LED chip unit 10 LED chip 11 Conductive substrate 12 Light emission part 14 Bonding wire 30 Submount member 41 Chip mounting member 42 Lead terminal (cathode side lead terminal)
43 Lead terminal (Anode lead terminal)
50 Reflector 60 Protective Cover 70 Chip Mounting Member 71 Conductive Plate 72 Insulating Part 73 Lead Pattern 80 Insulating Layer (Resin Sheet)
90 Instrument body

Claims (8)

一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたLEDチップと、LEDチップが搭載された金属板からなるチップ搭載部材と、LEDチップのアノード電極が電気的に接続されたアノード側リード端子と、LEDチップのカソード電極が電気的に接続されたカソード側リード端子と、金属製の器具本体と、チップ搭載部材およびアノード側リード端子およびカソード側リード端子と器具本体との間に介在し両者を電気的に絶縁し且つ両者を熱結合させる絶縁層とを備え、絶縁層は、熱硬化性の固着材により形成されてなることを特徴とするLEDを用いた照明器具。 An LED chip in which an anode electrode is formed on one surface side and a cathode electrode is formed on the other surface side, a chip mounting member made of a metal plate on which the LED chip is mounted, and the anode electrode of the LED chip are electrically connected An anode side lead terminal, a cathode side lead terminal to which the cathode electrode of the LED chip is electrically connected, a metal instrument body, a chip mounting member, an anode side lead terminal, a cathode side lead terminal, and an instrument body interposed example Bei and electrically insulates and insulating layer both thermally coupled both during, the insulating layer is illuminated using LED characterized by comprising formed by thermosetting the adhesive material Instruments. 前記チップ搭載部材が前記アノード側リード端子と前記カソード側リード端子とのうちの一方に連続一体に形成され、前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子が絶縁性の合成樹脂成形品の保持枠に同時一体に成形されてなることを特徴とする請求項1記載のLEDを用いた照明器具。   The chip mounting member is continuously and integrally formed on one of the anode side lead terminal and the cathode side lead terminal, and the chip mounting member, the anode side lead terminal, and the cathode side lead terminal are insulating synthetic resins. The lighting fixture using LED according to claim 1, wherein the lighting fixture is formed integrally with a holding frame of a molded product at the same time. 前記保持枠は、前記器具本体との対向面に、前記チップ搭載部材および前記アノード側リード端子および前記カソード側リード端子と前記器具本体との間の絶縁距離を確保する凸部が突設されてなることを特徴とする請求項2記載のLEDを用いた照明器具。   The holding frame is provided with a projecting portion for securing an insulating distance between the chip mounting member, the anode-side lead terminal, and the cathode-side lead terminal and the instrument body on a surface facing the instrument body. The lighting fixture using LED of Claim 2 characterized by becoming. 一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたLEDチップと、LEDチップが一面側に搭載される導電性プレートおよび当該導電性プレートの前記一面側に絶縁部を介して形成されLEDチップのアノード電極およびカソード電極がそれぞれ電気的に接続されるリードパターンを有するチップ搭載部材と、金属製の器具本体と、チップ搭載部材と器具本体との間に介在し両者を電気的に絶縁し且つ両者を熱結合させる絶縁層とを備え、絶縁層は、熱硬化性の固着材により形成されてなることを特徴とするLEDを用いた照明器具。 An LED chip having an anode electrode formed on one surface side and a cathode electrode formed on the other surface side, a conductive plate on which the LED chip is mounted on one surface side, and an insulating portion on the one surface side of the conductive plate A chip mounting member having a lead pattern that is electrically connected to an anode electrode and a cathode electrode of the LED chip, a metal instrument body, and a chip mounting member and the instrument body. electrically insulating and e Bei an insulating layer for thermally coupling the two, an insulating layer, an illumination fixture using the LED, characterized in that formed by formed by a thermosetting adhesive material. 前記LEDチップは、SiC基板もしくはGaN基板からなる導電性基板の主表面側にGaN系化合物半導体材料により形成された発光部を備え、導電性基板の裏面に前記アノード電極と前記カソード電極との一方が形成されたものであることを特徴とする請求項1ないし請求項4のいずれか1項に記載のLEDを用いた照明器具。   The LED chip includes a light emitting portion formed of a GaN-based compound semiconductor material on a main surface side of a conductive substrate made of a SiC substrate or a GaN substrate, and one of the anode electrode and the cathode electrode is formed on the back surface of the conductive substrate. The lighting fixture using LED of any one of Claim 1 thru | or 4 characterized by the above-mentioned. 前記LEDチップのチップサイズよりも大きく且つ前記LEDチップと前記チップ搭載部材との間に介在して前記LEDチップと前記チップ搭載部材との線膨張率の差に起因して前記LEDチップに働く応力を緩和するサブマウント部材を備えてなることを特徴とする請求項1ないし請求項5のいずれか1項に記載のLEDを用いた照明器具。   Stress acting on the LED chip due to a difference in linear expansion coefficient between the LED chip and the chip mounting member that is larger than the chip size of the LED chip and interposed between the LED chip and the chip mounting member The illumination fixture using LED of any one of Claims 1 thru | or 5 characterized by including the submount member which relieve | moderates. 前記チップ搭載部材がCuにより形成され、前記サブマウント部材がWもしくはCuWにより形成されてなることを特徴とする請求項6記載のLEDを用いた照明器具。   The lighting device using an LED according to claim 6, wherein the chip mounting member is made of Cu, and the submount member is made of W or CuW. 前記固着材は、フィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シートからなることを特徴とする請求項1ないし請求項7のいずれか1項に記載のLEDを用いた照明器具 Lighting the fixing material, using an LED as claimed in any one of claims 1 to 7, characterized in Rukoto such a resin sheet for low viscosity during content to and heating the filling material consisting of filler Instruments .
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