201228050 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體發光元件，特別涉及一種發光二 極體封裝結構。 【先前技術】 [0002] 發光二極體（Light Emitting Diode，LED)是一種可 將電流轉換成特定波長範圍之光之半導體元件。發光二 極體以其亮度高、工作電壓低、功耗小、易與積體電路 匹配、驅動簡單、壽命長等優點， 泛應用於照明領域。 [0003] 在習知之發光二極體封裝結構中， 從而可作為光源而廣 一般需要膠體將發光 二極體晶片黏結固定至基板上，膠體夾置於發光二極體 晶片與基板之間。由於發光二極體晶片工作時會產生熱 量，如果膠體之導熱性能不良的話，熱量將無法快速、 有效地傳遞至基板上而累積起來，進两造成發光二極體 晶片之工作溫度升高，導致發光二槪體晶片工作壽命縮 短甚至損毁。 【發明内容】 [0004] 一種發光二極體封裝結構，包括基板、設置在基板上之 發光二極體晶片及設置在基板上之電連接部，該發光二 極體晶片設置在電連接部上，該發光二極體封裝結構還 包括設置於電連接部上之散熱部。 [0005] 該發光二極體封裝結構中基板上之電連接部上設置有散 熱部，使得發光二極體晶片工作時產生熱量可以快速、 有效地通過電連接部傳導至散熱部上並最終散發出去， 099146214 表單編號A0101 第3頁/共10頁 0992079452-0 201228050 從而保證發光二極體晶片正常工作。 【實施方式】 [0006] [0007] [0008] 如圖1所不’本發明-實施例之發光二極體封裝結構包括 基板10，設置在基板1〇上之發光二極體晶片2〇、以及導 線40。 該基板10可以是塑膠基板或陶瓷基板如氧化鋁基板、氧 化鋅基板或者矽基板等。該基板1〇之表面設置有電連接 部12及散熱部14。該電連接部丨2包括第一電連接部12〇 和第二電連接部122。該第—電連揍部12〇和第二電連接 部122之間相互絕緣。在本實施例中，該第一電連接部 120和該第二電連接部122從基板1〇之上表面延伸到下表 面，從而形成一種可表面貼裝之結構。該散熱部14包括 設置於第一電連接部12〇上之第一散熱部14〇及設置於第 二電連接部122上之第二散熱部142。該第一散熱部14〇 包括與第一電連接部120相連接之第一主體部14〇〇及由該 第一主體部1400向外凸伸出之複數第一散熱鰭片14〇2。 該第二散熱部142包括與第二電連接部122相連接之第二 主體部142 0及由該第二主體部142〇向外凸伸出之複數第 二散熱鰭片1422。該第一主體部i4〇〇豎直設置於第一電 連接部120上，第二主體部142〇豎直設置於第二電連接部 122 上。 該發光二極體晶片20設置在第一電連接部120之上表面。 該發光二極體晶片20包括半導體發光結構21以及設置在 半導體發光結構21頂部之第一電極22和第二電極23。在 本實施例中，該第一電極22、第二電極23間隔設置在半 099146214 表單編號A0101 第4頁/共1〇頁 0992079452-0 201228050 導體發光結構21遠離基板“ 過-導線40與第-電連接切η、上。該第一電極22通 接#120形成電性連接， 第二電極23通過另-導線 ，” 連接。 ”—電連接部122形成電性 [0009] 該導線4 0具有良好之導電性 a 月 通吊由金屬材料製成》 該泠線40由電極（第一電極 乐一電極23)延伸而屮 與電連接部（第一電連接部 出 ZU第一電連接部122)相 連。 [0010] ο 該發光二極體封裝結構進1包括環繞該發光二極體晶 片20設置之反光杯5G。^光杯则以反射⑽發光_ 極體晶片20發出之光線1發光二極體封裝結構可以進 步〇括封裝體60。该封襄髖名〇容置於反光杯内並 完全覆蓋發光二極體晶片如及導線40。封裝刪用於 防止發光二極體晶片2〇受外界之環境如舰或者灰塵等 雜質之影響》具體地’該封炭趙6()可以是環氧樹脂或者 疋矽樹脂又或者是玻璃材料。此外，該封裝體60内還可 以摻入螢光粉70以實規光之轉換。該螢光粉70可為石榴 石（garnet)結構之化合物、硫化物（suifide)、碟化物 (phosphate)、氮化物（nitride)、氮氧化物 (oxynitride)、發酸鹽類（siiicate)、神化物、碼化 物或蹄化物中之至少一種。 [00Π] 在本實施例中，該第一散熱部140之第一主體部1400穿置 於該反光杯50中，該第一散熱鰭片1402由第一主體部 1400向外延伸出反光杯5〇 ;該第二散熱部142之第二主 099146214 體部1420穿置於該反光杯50中，該第二散熱鰭片1422由 表單編號A0101 S ς百,n = 乐 a 只/共 10 頁 0992079452-0 201228050 第二主體部1 420向外延伸出反光杯50。該等第一散熱鰭 片1402垂直於第一主體部1 400，相互平行、間隔設置， 同樣，該等第二散熱鰭片1422垂直於第二主體部1420， 相互平行、間隔設置。可以理解地，根據實際需要，該 散熱部14也可以只包括第一散熱部140或者第二散熱部 142。 [0012] 另，上述發光二極體晶片20之兩電極並不限於上述實施 例中分佈於發光二極體晶片20之同一側，其也可以位於 發光二極體晶片20之相反兩側。此種情況僅需要一根導 線40連接相應之電極22、23與電連接部120、122如第二 電極23與第二電連接部122。 [0013] 該發光二極體晶片20在基板10上之電連接部12上設置有 散熱部14，使得發光二極體晶片20工作時產生熱量可以 快速、有效地通過電連接部12傳導至散熱部14上並最終 散發出去，從而保證發光二極體晶片20正常工作。 [0014] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0015] 圖1為本發明一實施例之發光二極體封裝結構之截面示意 圖。 【主要元件符號說明】 099146214 表單編號A0101 第6頁/共10頁 0992079452-0 201228050 099146214 [0016] 基板：10 [0017] 電連接部：12 [0018] 第一電連接部： 120 [0019] 第二電連接部： 122 [0020] 散熱部：14 [0021] 第一散熱部：140 [0022] 第一主體部：1400 [0023] 第一散熱鰭片： 1402 [0024] 第二散熱部：142 [0025] 第二主體部：1420 [0026] 第二散熱鰭片： 1422 [0027] 發光二極體晶片 ：20 [0028] 半導體發光結構 ：21 [0029] 第一電極：22 [0030] 第二電極：23 [0031] 導線：40 [0032] 反光杯：50 [0033] 封裝體：60 [0034] 螢光粉：70 1 表單編號A0101 第7 第7頁/共10頁 0992079452-0201228050 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a semiconductor light emitting device, and more particularly to a light emitting diode package structure. [Prior Art] [0002] A Light Emitting Diode (LED) is a semiconductor element that converts current into light of a specific wavelength range. The light-emitting diode is widely used in the field of illumination because of its high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] In the conventional light-emitting diode package structure, it can be widely used as a light source. Generally, a colloid is required to bond the light-emitting diode wafer to the substrate, and the colloid is sandwiched between the light-emitting diode wafer and the substrate. Since the light-emitting diode wafer generates heat during operation, if the thermal conductivity of the colloid is poor, the heat cannot be quickly and efficiently transferred to the substrate and accumulates, and the operating temperature of the LED chip is increased, resulting in an increase in the operating temperature of the LED chip. The working life of the light-emitting diode wafer is shortened or even destroyed. SUMMARY OF THE INVENTION [0004] A light emitting diode package structure includes a substrate, a light emitting diode chip disposed on the substrate, and an electrical connection portion disposed on the substrate, the light emitting diode chip being disposed on the electrical connection portion The LED package structure further includes a heat dissipating portion disposed on the electrical connection portion. [0005] The heat-dissipating portion is disposed on the electrical connection portion of the substrate in the light-emitting diode package structure, so that heat generated during operation of the light-emitting diode chip can be quickly and effectively conducted to the heat-dissipating portion through the electrical connection portion and finally distributed. Go out, 099146214 Form No. A0101 Page 3 / Total 10 Page 0992079452-0 201228050 This ensures that the LED chip works properly. [0008] [0008] [0008] [0008] The light-emitting diode package structure of the present invention is not shown in FIG. 1. The substrate 10 includes a substrate 10, and a light-emitting diode chip 2 is disposed on the substrate 1 And the wire 40. The substrate 10 may be a plastic substrate or a ceramic substrate such as an alumina substrate, a zinc oxide substrate or a germanium substrate. The surface of the substrate 1 is provided with an electrical connection portion 12 and a heat dissipation portion 14. The electrical connection portion 2 includes a first electrical connection portion 12A and a second electrical connection portion 122. The first electric connecting portion 12A and the second electric connecting portion 122 are insulated from each other. In this embodiment, the first electrical connection portion 120 and the second electrical connection portion 122 extend from the upper surface of the substrate 1 to the lower surface to form a surface mountable structure. The heat dissipating portion 14 includes a first heat dissipating portion 14 disposed on the first electrical connection portion 12A and a second heat dissipating portion 142 disposed on the second electrical connection portion 122. The first heat dissipation portion 14A includes a first body portion 14A connected to the first electrical connection portion 120 and a plurality of first heat dissipation fins 14A2 projecting outwardly from the first body portion 1400. The second heat dissipation portion 142 includes a second body portion 142 0 connected to the second electrical connection portion 122 and a plurality of second heat dissipation fins 1422 protruding outward from the second body portion 142 . The first body portion i4 is vertically disposed on the first electrical connection portion 120, and the second body portion 142 is vertically disposed on the second electrical connection portion 122. The light emitting diode chip 20 is disposed on an upper surface of the first electrical connection portion 120. The light emitting diode chip 20 includes a semiconductor light emitting structure 21 and a first electrode 22 and a second electrode 23 disposed at the top of the semiconductor light emitting structure 21. In this embodiment, the first electrode 22 and the second electrode 23 are spaced apart at half 099146214. Form No. A0101 Page 4 / Total 1 page 0992079452-0 201228050 Conductor light-emitting structure 21 away from the substrate "over-wire 40 and - The electrical connection is cut, and the first electrode 22 is electrically connected to the #120, and the second electrode 23 is connected by another wire. ”—Electrical connection portion 122 is electrically formed [0009] The wire 40 has good conductivity, and the sling is made of a metal material. The squall line 40 is extended by the electrode (the first electrode, the electrode 23). The electrical connection portion (the first electrical connection portion is connected to the ZU first electrical connection portion 122) is connected. [0010] The light emitting diode package structure 1 includes a reflective cup 5G disposed around the light emitting diode chip 20. The cup is reflected (10) illuminating _ the light emitted by the polar body chip 20. The light emitting diode package structure can be improved to include the package body 60. The sealed hip name is placed in the reflective cup and completely covers the light emitting diode wafer. And the wire 40. The package is used to prevent the light-emitting diode chip 2 from being affected by external environment such as ships or dust. In particular, the sealing carbon 6 () may be epoxy resin or resin or It is a glass material. In addition, the phosphor 60 can be incorporated into the package 60 to convert it into a light. The phosphor powder 70 can be a garnet compound, a suifide, or a dish. (phosphate), nitride (nitride), nitrogen oxide (oxy In the present embodiment, the first main body portion 1400 of the first heat dissipating portion 140 is placed in the reflective cup. The first heat dissipation fin 1402 extends outward from the first body portion 1400 and exits the reflector cup 5; the second main 099146214 body portion 1420 of the second heat dissipation portion 142 is inserted into the reflector cup 50. The second heat dissipating fins 1422 are formed by the form number A0101 S ς hundred, n = 乐a only / total 10 pages 0992079452-0 201228050 The second main body portion 1 420 extends outwardly out of the reflector cup 50. The first heat dissipating fins 1402 are perpendicular to The first main body portions 1 400 are disposed parallel to each other and spaced apart from each other. Similarly, the second heat dissipating fins 1422 are perpendicular to the second main body portion 1420, and are disposed in parallel and spaced apart from each other. It is understood that the heat dissipating portion 14 is also required according to actual needs. The second heat dissipating portion 140 or the second heat dissipating portion 142 may be included. [0012] In addition, the two electrodes of the light emitting diode chip 20 are not limited to being distributed on the same side of the LED body 20 in the above embodiment. It can also be located in the phase of the LED chip 20 In this case, only one wire 40 is required to connect the corresponding electrodes 22, 23 with the electrical connection portions 120, 122 such as the second electrode 23 and the second electrical connection portion 122. [0013] The light emitting diode wafer 20 A heat dissipating portion 14 is disposed on the electrical connection portion 12 of the substrate 10, so that heat generated during operation of the LED body 20 can be quickly and efficiently conducted to the heat dissipating portion 14 through the electrical connection portion 12 and finally dissipated, thereby ensuring The LED chip 20 operates normally. [0014] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0015] FIG. 1 is a schematic cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. [Main component symbol description] 099146214 Form number A0101 Page 6/10 page 0992079452-0 201228050 099146214 [0016] Substrate: 10 [0017] Electrical connection: 12 [0018] First electrical connection: 120 [0019] Two electrical connection parts: 122 [0020] heat dissipation part: 14 [0021] First heat dissipation part: 140 [0022] First main body part: 1400 [0023] First heat dissipation fin: 1402 [0024] Second heat dissipation part: 142 [0025] Second body portion: 1420 [0026] Second heat sink fin: 1422 [0027] Light-emitting diode wafer: 20 [0028] Semiconductor light-emitting structure: 21 [0029] First electrode: 22 [0030] Electrode: 23 [0031] Wire: 40 [0032] Reflector: 50 [0033] Package: 60 [0034] Fluorescent Powder: 70 1 Form No. A0101 No. 7 Page 7 of 10 0992079452-0