JP4001178B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP4001178B2
JP4001178B2 JP2006254806A JP2006254806A JP4001178B2 JP 4001178 B2 JP4001178 B2 JP 4001178B2 JP 2006254806 A JP2006254806 A JP 2006254806A JP 2006254806 A JP2006254806 A JP 2006254806A JP 4001178 B2 JP4001178 B2 JP 4001178B2
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led chip
light emitting
light
optical member
resin
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JP2007116125A (en
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策雄 鎌田
恭志 西岡
洋二 浦野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来、白色光を得る発光装置として、例えば、青色光を放射するLEDチップとLEDチップから放射された青色光によって励起されてブロードな黄色光を放射する黄色蛍光体とを組み合わせて白色光を得るようにしたものがある(例えば、特許文献1参照)。
特開2001−148509号公報
Conventionally, as a light emitting device that obtains white light, for example, an LED chip that emits blue light and a yellow phosphor that emits broad yellow light when excited by blue light emitted from the LED chip are combined to obtain white light. There is something like that (see, for example, Patent Document 1).
JP 2001-148509 A

しかしながら、単一のLEDチップを用いる従来例においては、そのサイズに比較して発光効率がよくないという問題があった。   However, the conventional example using a single LED chip has a problem in that the light emission efficiency is not good as compared with the size.

本発明は上記事情に鑑みて為されたものであり、その目的は、大型化を伴わずに発光効率が向上する発光装置を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting device in which the light emission efficiency is improved without increasing the size.

本発明は、上記目的を達成するために、複数のLEDチップと、これら複数のLEDチップが実装された実装基板と、透明樹脂材料からなり実装基板におけるLEDチップの実装面側で全てのLEDチップ及び当該各LEDチップに接続されたボンディングワイヤを封止する封止部と、封止部に重ねて配置される光学部材と、透明材料を成形した成形品であって光学部材の光出射面側に光学部材を覆い且つ当該光出射面との間に空気層が形成される形で配設されるドーム状の保護カバーとを備えたことを特徴とする。 To achieve the above object, the present invention provides a plurality of LED chips, a mounting substrate on which the plurality of LED chips are mounted, and all LED chips on the mounting surface side of the LED chip on the mounting substrate made of a transparent resin material. And a sealing part for sealing the bonding wire connected to each LED chip, an optical member arranged to overlap the sealing part, and a molded product obtained by molding a transparent material on the light emitting surface side of the optical member And a dome-shaped protective cover disposed in such a manner that an air layer is formed between the optical member and the light emitting surface .

本発明によれば、複数のLEDチップを実装基板に実装したため、単一のLEDチップを実装基板に実装する場合に比較して光が放射される総面積が増大して発光効率が向上でき、しかも、小型のLEDチップを用いることで大型化することがないものである。   According to the present invention, since a plurality of LED chips are mounted on the mounting substrate, the total area from which light is emitted can be increased as compared with the case where a single LED chip is mounted on the mounting substrate, and the luminous efficiency can be improved. Moreover, the use of a small LED chip does not increase the size.

以下、図面を参照して本発明の実施形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(実施形態1)
図1は本実施形態の発光装置の断面図、図2は分解斜視図、図3は要部の平面図をそれぞれ示している。
(Embodiment 1)
FIG. 1 is a cross-sectional view of the light emitting device of the present embodiment, FIG. 2 is an exploded perspective view, and FIG. 3 is a plan view of the main part.

本実施形態の発光装置は、複数(本実施形態では8個)のLEDチップ10と、これら複数のLEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側で全てのLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されて各LEDチップ10および個々のLEDチップ10に接続されたボンディングワイヤ14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置される光学部材(レンズ)60と、透明材料を成形した成形品であって光学部材60の光出射面60b側に光学部材60を覆い光出射面60bおよび枠体40との間に空気層80が形成される形で配設されるドーム状の保護カバー70とを備えている。   The light emitting device of the present embodiment includes a plurality (eight in this embodiment) of LED chips 10, a mounting substrate 20 on which the plurality of LED chips 10 are mounted, and a mounting surface side of the LED chip 10 on the mounting substrate 20. A frame 40 surrounding all the LED chips 10, and a transparent resin material filled inside the frame 40 to seal each LED chip 10 and the bonding wires 14 connected to the individual LED chips 10; A sealing part 50 having elasticity, an optical member (lens) 60 disposed so as to overlap the sealing part 50, and a molded product obtained by molding a transparent material, the optical member 60 on the light emitting surface 60b side of the optical member 60 And a dome-shaped protective cover 70 disposed in such a manner that an air layer 80 is formed between the light emitting surface 60 b and the frame body 40.

実装基板20は、扁平な略矩形板状の金属板からなる伝熱板21と、伝熱板21の表面(図1,2における上面)に接合された略矩形平板状の配線基板22とを具備する。配線基板22は、例えば、難燃性のガラス布基材エポキシ樹脂からなる絶縁性基材22aの一表面側に導体パターン23,23が形成された、一般的な耐熱性を備える銅張り積層板(いわゆるFR4基板)からなり、中央には厚み方向に貫通する略矩形の窓孔24が設けられている。伝熱板21は、熱伝導率が比較的高い金属材料(CuやAlなど)によって配線基板22よりも十分に厚みの大きい略矩形平板状に形成されている。ここで、配線基板22の窓孔24内において、後述するサブマウント部材30が伝熱板21に接合されており、各LEDチップ10で発生した熱がサブマウント部材30を介して伝熱板21に伝熱されるようになっている。なお、伝熱板21と配線基板22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各導体パターン23は、保護カバー70により覆われていない部位がアウターリード部23bとなっている。   The mounting substrate 20 includes a heat transfer plate 21 made of a flat, substantially rectangular plate-shaped metal plate, and a substantially rectangular flat plate-like wiring substrate 22 bonded to the surface of the heat transfer plate 21 (the upper surface in FIGS. 1 and 2). It has. The wiring board 22 is, for example, a copper-clad laminate having general heat resistance in which conductor patterns 23 and 23 are formed on one surface side of an insulating base material 22a made of a flame-retardant glass cloth base epoxy resin. (A so-called FR4 substrate), and a substantially rectangular window hole 24 penetrating in the thickness direction is provided at the center. The heat transfer plate 21 is formed in a substantially rectangular flat plate shape that is sufficiently thicker than the wiring substrate 22 by a metal material (Cu, Al, etc.) having a relatively high thermal conductivity. Here, in the window hole 24 of the wiring board 22, a submount member 30 described later is joined to the heat transfer plate 21, and heat generated in each LED chip 10 is transmitted through the submount member 30. Heat is transmitted to the. The heat transfer plate 21 and the wiring substrate 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Further, each conductor pattern 23 has a portion not covered by the protective cover 70 as an outer lead portion 23b.

LEDチップ10は、青色、赤色、緑色の3種類の光をそれぞれ放射するGaN系青色LEDチップ、GaAs系赤色LEDチップ、GaP系緑色LEDチップであり、一辺がおよそ0.2〜0.5mmの直方体状である。青色LEDチップは、例えば、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板(図示せず)を用いており、導電性基板の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部(図示せず)がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部の表面(導電性基板の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。なお、赤色LEDチップ及び緑色LEDチップについては青色LEDチップと同様の構造であるから詳細な説明を省略する。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部が導電性基板よりも伝熱板21から離れた側となるように伝熱板21に実装されているが、LEDチップ10の発光部が導電性基板よりも伝熱板21に近い側となるように伝熱板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部を伝熱板21から離れた側に配置することが望ましいが、本実施形態では導電性基板と発光部とが同程度の屈折率を有しているので、発光部を伝熱板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip, a GaAs-based red LED chip, or a GaP-based green LED chip that emits three types of light of blue, red, and green, respectively, and each side is approximately 0.2 to 0.5 mm. It is a rectangular parallelepiped. The blue LED chip uses, for example, a conductive substrate (not shown) made of an n-type SiC substrate having a lattice constant or crystal structure close to that of GaN and having conductivity compared to a sapphire substrate as a crystal growth substrate. A light emitting portion (not shown) made of a GaN-based compound semiconductor material and having a double hetero structure, for example, is formed on the main surface side of the conductive substrate by an epitaxial growth method (for example, MOVPE method). A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate, and is an anode side electrode (not shown) on the surface of the light emitting part (the outermost surface on the main surface side of the conductive substrate). An anode electrode (p electrode) is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. Since the red LED chip and the green LED chip have the same structure as the blue LED chip, detailed description thereof is omitted. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the LED chip 10 is mounted on the heat transfer plate 21 so that the light emitting portion is farther from the heat transfer plate 21 than the conductive substrate. However, the light emitting portion of the LED chip 10 is conductive. You may make it mount in the heat-transfer board 21 so that it may become the side near the heat-transfer board 21 rather than a heat conductive board. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting part on the side away from the heat transfer plate 21, but in this embodiment, the conductive substrate and the light emitting part have the same refractive index. Therefore, even if the light emitting part is arranged on the side close to the heat transfer plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の伝熱板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と伝熱板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して実装されている。サブマウント部材30は、熱伝導率が比較的高く且つ絶縁性を有するAlNで略矩形平板状に形成されており、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を伝熱板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。サブマウント部材30におけるLEDチップ10側の表面には、図3に示すように個々のLEDチップ10のカソード電極と接続される複数(合計8個)の電極パターン31が形成され、各電極パターン31と別の電極パターン31にカソード電極が接続されたLEDチップ10のアノード電極とが金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して電気的に接続されている。本実施形態では8個のLEDチップ10が全て直列接続されており、一端側のLEDチップ10のアノード電極がサブマウント部材30の表面に形成された中継用の導電パターン32及びボンディングワイヤ14を介して一方の導体パターン23と電気的に接続され、他端側のLEDチップ10と接続された電極パターン31がボンディングワイヤ14を介して他方の導体パターン23と電気的に接続されている(図3参照)。なお、LEDチップ10とサブマウント部材30の電極パターン31とは、AuSn、SnAgCuなどの鉛フリー半田を用いて接合されている。   The LED chip 10 is formed on the above-described heat transfer plate 21 in a rectangular plate shape larger than the chip size of the LED chip 10, and is caused by a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21. It is mounted via a submount member 30 that relieves stress acting on the LED chip 10. The submount member 30 is made of AlN having a relatively high thermal conductivity and insulating properties, and is formed in a substantially rectangular flat plate shape. The submount member 30 not only functions to relieve the stress but also transfers heat generated by the LED chip 10. The plate 21 has a heat conduction function for transferring heat to a range wider than the chip size of the LED chip 10. On the surface of the submount member 30 on the LED chip 10 side, as shown in FIG. 3, a plurality (total 8) of electrode patterns 31 connected to the cathode electrodes of the individual LED chips 10 are formed. The anode electrode of the LED chip 10 to which the cathode electrode is connected to another electrode pattern 31 is electrically connected via a bonding wire 14 made of a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.). In the present embodiment, all of the eight LED chips 10 are connected in series, and the anode electrode of the LED chip 10 on one end side is connected via the conductive pattern 32 for relay and the bonding wire 14 formed on the surface of the submount member 30. The electrode pattern 31 connected to one conductor pattern 23 and connected to the LED chip 10 on the other end side is electrically connected to the other conductor pattern 23 via the bonding wire 14 (FIG. 3). reference). The LED chip 10 and the electrode pattern 31 of the submount member 30 are bonded using lead-free solder such as AuSn or SnAgCu.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and may be any material having a linear expansion coefficient that is relatively close to 6H—SiC that is a material of the conductive substrate and a relatively high thermal conductivity. For example, composite SiC, Si Etc. may be adopted.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   As the transparent resin material of the sealing portion 50 described above, a silicone resin is used, but not limited to a silicone resin, an acrylic resin or the like may be used.

これに対して、枠体40は、円筒状の形状であって、透明樹脂の成形品により構成されているが、当該成形品に用いる透明樹脂としては、シリコーン樹脂を採用している。要するに、本実施形態では、封止部50の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料により枠体40を形成してある。ここに、本実施形態では、枠体40を金属基板20に固着した後で枠体40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成している。なお、上記透明樹脂材料としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40をアクリル樹脂の成形品により構成することが望ましい。   On the other hand, the frame 40 has a cylindrical shape and is formed of a transparent resin molded product, and a silicone resin is used as the transparent resin used in the molded product. In short, in the present embodiment, the frame body 40 is formed of a translucent material having a linear expansion coefficient equivalent to that of the transparent resin material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the metal substrate 20, the sealing resin 50 is formed by filling (potting) the transparent resin material inside the frame body 40 and thermosetting the same. Yes. In the case where an acrylic resin is used as the transparent resin material in place of the silicone resin, it is desirable that the frame body 40 be formed of an acrylic resin molded product.

光学部材60は、封止部50側の光入射面60a並びに光出射面60bが凸曲面状に形成された両凸レンズからなる。ここにおいて、光学部材60は、シリコーン樹脂の成形品により構成してあり、上記透明樹脂材料と屈折率が同じ値となっているが、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The optical member 60 is composed of a biconvex lens in which the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side are formed in a convex curved surface shape. Here, the optical member 60 is formed of a molded product of silicone resin and has the same refractive index as that of the transparent resin material. However, the optical member 60 is not limited to the molded product of silicone resin. You may comprise by goods.

ところで、光学部材60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。なお、LEDチップ10の側面から放射された光は封止部50および枠体40および空気層80を伝搬して保護カバー70まで到達し保護カバー70を透過する。   By the way, the optical member 60 has a light exit surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light exit surface 60b and the air layer 80 described above. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50, the frame body 40 and the air layer 80 to reach the protective cover 70 and passes through the protective cover 70.

保護カバー70は、シリコーン樹脂のような透明材料の成形品により、内面70aが光学部材60の光出射面60bに沿ったドーム形状(つまり、光学部材60の光出射面60bに対応した上記球面よりも直径が大きな球面の一部からなる形状)に形成されている。したがって、光学部材60の光出射面60bの位置によらず法線方向における光出射面60bと保護カバー70の内面70aとの間の距離が略一定値となっている。なお、保護カバー70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。保護カバー70は、開口部の周縁を配線基板22に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。なお、保護カバー70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。   The protective cover 70 is formed of a transparent material such as silicone resin, and the inner surface 70a is formed in a dome shape along the light emitting surface 60b of the optical member 60 (that is, from the spherical surface corresponding to the light emitting surface 60b of the optical member 60). Is also formed into a part of a spherical surface having a large diameter. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the protective cover 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the optical member 60. In addition, the protective cover 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The protective cover 70 may be bonded to the peripheral edge of the opening with respect to the wiring board 22 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like). The transparent material used as the material of the protective cover 70 is not limited to a silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed.

ところで、本実施形態の発光装置を照明器具の光源に用いる場合、金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100にグリーンシートからなる絶縁層90を介して実装される。絶縁層90は、実装基板20と器具本体100との両者を電気的に絶縁し且つ熱結合させる機能を有している。但し、絶縁層90は、グリーンシートのようなシート状に成形したセラミックスの未燒結体に限らず、例えば、熱硬化性の固着材(例えば、エポキシ樹脂など)を用いてもよい。   By the way, when using the light-emitting device of this embodiment for the light source of a lighting fixture, it mounts in the instrument main body 100 made from metal (for example, metal with high heat conductivity, such as Al and Cu) via the insulating layer 90 which consists of a green sheet. Is done. The insulating layer 90 has a function of electrically insulating and thermally coupling both the mounting substrate 20 and the instrument main body 100. However, the insulating layer 90 is not limited to an unsintered ceramic body formed into a sheet shape such as a green sheet, and for example, a thermosetting fixing material (for example, an epoxy resin) may be used.

上述のように本実施形態の発光装置では、青色、赤色、緑色の3種類を含む複数のLEDチップ10を実装基板20に実装したため、全ての色が混色された白色光が得られるとともに、単一のLEDチップ(通常は、一辺がおよそ0.7〜1mmの直方体状に形成されている。)を実装基板20に実装する場合に比較して光が放射される総面積が増大するために発光効率が向上でき、しかも、小型のLEDチップ10を用いることで大型化することがないものである。   As described above, in the light emitting device of the present embodiment, since the plurality of LED chips 10 including three types of blue, red, and green are mounted on the mounting substrate 20, white light in which all colors are mixed is obtained, and Compared with the case where one LED chip (usually formed in a rectangular parallelepiped shape having one side of approximately 0.7 to 1 mm) is mounted on the mounting substrate 20, the total area where light is emitted is increased. Luminous efficiency can be improved, and the use of the small LED chip 10 does not increase the size.

(実施形態2)
図4〜図7を参照して本実施形態の発光装置を説明する。
(Embodiment 2)
The light-emitting device of this embodiment is demonstrated with reference to FIGS.

本実施形態の発光装置の基本構成は実施形態1と略同じであり、複数のLEDチップ10から放射された光の配光を制御する光学部材60が、実装基板20との間に全てのLEDチップ10を収納する形で実装基板20の一表面側(図4における上面側)に固着されるドーム状に形成されており、LEDチップ10および当該LEDチップ10に電気的に接続されたボンディングワイヤ14,14を封止した封止部50が光学部材60と実装基板20とで囲まれた空間に充実されている点などが相違する。ここにおいて、保護カバー70は、実装基板20の上記一表面側において光学部材60の光出射面60bとの間に空気層80が形成されるように配設されている。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment, and the optical member 60 that controls the light distribution of the light emitted from the plurality of LED chips 10 includes all the LEDs between the mounting substrate 20 and the LED. The LED chip 10 and a bonding wire electrically connected to the LED chip 10 are formed in a dome shape that is fixed to one surface side (the upper surface side in FIG. 4) of the mounting substrate 20 so as to accommodate the chip 10. The difference is that the sealing portion 50 that seals 14 and 14 is filled in a space surrounded by the optical member 60 and the mounting substrate 20. Here, the protective cover 70 is disposed so that an air layer 80 is formed between the one surface side of the mounting substrate 20 and the light emitting surface 60 b of the optical member 60. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

また、本実施形態の発光装置は、実装基板20の他表面側に、シート状の接合用部材91として、シリカやアルミナなどのフィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)を備えている。しかして、本実施形態の発光装置を照明器具の光源として用いる場合には、例えば、照明器具における金属(例えば、Al,Cuなどの熱伝導率の高い金属)製の器具本体100(図5参照)と実装基板20とを接合用部材91により接合することができる。ここにおいて、上記樹脂シートからなる接合用部材91は、電気絶縁性を有するとともに熱伝導率が高く加熱時の流動性が高く凹凸面への密着性が高いので、実装基板20を金属製の器具本体100に接合用部材91を介して接合する際(実装基板20と器具本体100との間に接合用部材91を介在させた後で接合用部材91を加熱することで実装基板20と器具本体100とを接合する際)に接合用部材91と実装基板20および器具本体100との間に空隙が発生するのを防止することができて、密着不足による熱抵抗の増大やばらつきの発生を防止することができ、従来のように発光装置を回路基板に実装して回路基板と器具本体との間にサーコン(登録商標)のようなゴムシート状の放熱シートなどを挟む場合に比べて、各LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上するとともに熱抵抗のばらつきが小さくなり、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   In addition, the light emitting device according to the present embodiment includes a resin sheet containing a filler made of a filler such as silica or alumina on the other surface side of the mounting substrate 20 as a sheet-like bonding member 91 and having a low viscosity during heating. (For example, an organic green sheet such as an epoxy resin sheet highly filled with fused silica). Thus, when the light emitting device of the present embodiment is used as a light source of a lighting fixture, for example, a fixture main body 100 made of metal (for example, a metal having high thermal conductivity such as Al or Cu) in the lighting fixture (see FIG. 5). ) And the mounting substrate 20 can be joined by the joining member 91. Here, the bonding member 91 made of the resin sheet has electrical insulation properties, high thermal conductivity, high fluidity during heating, and high adhesion to the uneven surface. When joining to the main body 100 via the joining member 91 (the joining member 91 is interposed between the mounting substrate 20 and the instrument main body 100 and then the joining member 91 is heated to thereby heat the mounting substrate 20 and the instrument main body. Can be prevented from occurring between the bonding member 91 and the mounting substrate 20 and the instrument main body 100, and an increase in thermal resistance and variations due to insufficient adhesion can be prevented. Compared to the conventional case where a light emitting device is mounted on a circuit board and a rubber sheet-like heat dissipation sheet such as Sarcon (registered trademark) is sandwiched between the circuit board and the instrument body as in the past. LED Since the heat resistance from the top 10 to the instrument body 100 can be reduced, the heat dissipation is improved, the variation in the thermal resistance is reduced, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, so the input power is increased. It is possible to increase the optical output.

また、本実施形態では、実装基板20における配線基板22として、ポリイミドフィルムからなる絶縁性基材22aの一表面側に導体パターン23,23が形成されたフレキシブルプリント配線板を採用しており、当該配線基板22が伝熱板21の一面側(図4における上面側)に例えばポリオレフィン系の固着シート29(図5参照)を介して固着されている。また、絶縁性基材22aにおける伝熱板21側とは反対の表面側に、導体パターン23,23および絶縁性基材22aにおいて導体パターン23,23が形成されていない部位を覆う白色系の樹脂からなるレジスト層26が積層されている。したがって、LEDチップ10の側面から放射されレジスト層26の表面に入射した光がレジスト層26の表面で反射されるので、LEDチップ10から放射された光が配線基板22に吸収されるのを防止することができ、外部への光取り出し効率の向上による光出力の向上を図れる。ここで、各導体パターン23,23は、絶縁性基材22aの外周形状の半分よりもやや小さな外周形状に形成されている。なお、絶縁性基材22aの材料としては、FR4、FR5、紙フェノールなどを採用してもよい。   Moreover, in this embodiment, the flexible printed wiring board by which the conductor patterns 23 and 23 were formed in the one surface side of the insulating base material 22a consisting of a polyimide film is employ | adopted as the wiring board 22 in the mounting substrate 20, The wiring board 22 is fixed to one surface side (the upper surface side in FIG. 4) of the heat transfer plate 21 via, for example, a polyolefin-based fixing sheet 29 (see FIG. 5). Further, a white resin that covers the conductive patterns 23 and 23 and the portion where the conductive patterns 23 and 23 are not formed in the insulating base material 22a on the surface side opposite to the heat transfer plate 21 side in the insulating base material 22a. A resist layer 26 made of is laminated. Therefore, since the light emitted from the side surface of the LED chip 10 and incident on the surface of the resist layer 26 is reflected by the surface of the resist layer 26, the light emitted from the LED chip 10 is prevented from being absorbed by the wiring substrate 22. Thus, the light output can be improved by improving the light extraction efficiency to the outside. Here, each conductor pattern 23 and 23 is formed in the outer periphery shape a little smaller than half of the outer periphery shape of the insulating base material 22a. In addition, as a material of the insulating base material 22a, FR4, FR5, paper phenol, or the like may be employed.

また、レジスト層26は、配線基板22の窓孔24の近傍において各導体パターン23,23のインナーリード部23aが露出し、配線基板22の周部において各導体パターン23,23のアウターリード部23bが露出するようにパターニングされており、各導体パターン23,23は、配線基板22の窓孔24近傍において露出したインナーリード部23aが、ボンディングワイヤ14が接続される端子部を構成し、配線基板22の周部において露出した円形状のアウターリード部23bが外部接続用の電極部を構成している。また、2つのアウターリード部23bのうち直列に接続された一方の端のLEDチップ10のアノード側の電極が電気的に接続されるアウターリード部23b(図5における右側のアウターリード部23b)には「+」の表示が形成され、直列に接続された他方の端のLEDチップ10のカソード側の電極が電気的に接続されるアウターリード部23b(図5における左側のアウターリード部23b)には「−」の表示が形成されているので、発光装置における両アウターリード部23a,23bの極性を視認することができ、誤接続を防止することができる。   Further, in the resist layer 26, the inner lead portions 23 a of the respective conductor patterns 23 and 23 are exposed in the vicinity of the window holes 24 of the wiring substrate 22, and the outer lead portions 23 b of the respective conductor patterns 23 and 23 in the peripheral portion of the wiring substrate 22. In each of the conductor patterns 23 and 23, the inner lead portion 23a exposed in the vicinity of the window hole 24 of the wiring substrate 22 constitutes a terminal portion to which the bonding wire 14 is connected. A circular outer lead portion 23b exposed at the peripheral portion of 22 constitutes an electrode portion for external connection. Further, the outer lead portion 23b (the right outer lead portion 23b in FIG. 5) to which the anode side electrode of the LED chip 10 at one end connected in series among the two outer lead portions 23b is electrically connected. Is formed on the outer lead portion 23b (the left outer lead portion 23b in FIG. 5) to which the cathode side electrode of the LED chip 10 at the other end connected in series is electrically connected. Since “−” is displayed, the polarities of both outer lead portions 23a and 23b in the light emitting device can be visually recognized, and erroneous connection can be prevented.

光学部材60は、シリコーン樹脂などの透光性材料の成形品であってドーム状に形成されている。ここで、本実施形態では、封止部50の材料としてシリコーン樹脂を採用しており、光学部材60をシリコーン樹脂の成形品により構成しているので、光学部材60と封止部50との屈折率差および線膨張率差を小さくすることができる。なお、封止部50の材料がアクリル樹脂の場合には、光学部材60もアクリル樹脂により形成することが好ましい。   The optical member 60 is a molded product of a translucent material such as silicone resin, and is formed in a dome shape. Here, in this embodiment, since the silicone resin is adopted as the material of the sealing portion 50 and the optical member 60 is formed of a molded product of the silicone resin, the optical member 60 and the sealing portion 50 are refracted. The difference in rate and the linear expansion coefficient can be reduced. In addition, when the material of the sealing part 50 is an acrylic resin, it is preferable to form the optical member 60 also with an acrylic resin.

ところで、上述の発光装置の製造方法にあたっては、例えば、直列接続されたLEDチップ10と各導体パターン23,23とをそれぞれボンディングワイヤ14,14を介して電気的に接続した後、図6に示すようにディスペンサ400のノズル401の先端部を配線基板22の窓孔24に連続して形成されている樹脂注入孔28に合わせてサブマウント部材30と配線基板22との隙間に封止部50の一部となる液状の封止樹脂(例えば、シリコーン樹脂)を注入してから硬化させ、その後、ドーム状の光学部材60の内側に上述の封止部50の残りの部分となる液状の封止樹脂(例えば、シリコーン樹脂)を注入してから、光学部材60を実装基板20における所定位置に配置して封止樹脂を硬化させることにより封止部50を形成するのと同時に光学部材60を実装基板20に固着し、その後、保護カバー70を実装基板20に固着するような製造方法が考えられるが、このような製造方法でも、製造過程において封止部50に気泡(ボイド)が発生する恐れがあるので、光学部材60に液状の封止樹脂を多めに注入する必要がある。   By the way, in the manufacturing method of the light-emitting device described above, for example, after the LED chip 10 and the conductor patterns 23 and 23 connected in series are electrically connected via the bonding wires 14 and 14, respectively, as shown in FIG. As described above, the tip of the nozzle 401 of the dispenser 400 is aligned with the resin injection hole 28 formed continuously from the window hole 24 of the wiring board 22, and the sealing portion 50 is inserted into the gap between the submount member 30 and the wiring board 22. A liquid sealing resin (for example, silicone resin) that becomes a part is injected and cured, and then the liquid sealing that becomes the remaining part of the above-described sealing part 50 inside the dome-shaped optical member 60. After injecting a resin (for example, a silicone resin), the sealing member 50 is formed by placing the optical member 60 at a predetermined position on the mounting substrate 20 and curing the sealing resin. At the same time, a manufacturing method in which the optical member 60 is fixed to the mounting board 20 and then the protective cover 70 is fixed to the mounting board 20 can be considered. Since air bubbles (voids) may be generated, it is necessary to inject a large amount of liquid sealing resin into the optical member 60.

しかしながら、このような製造方法を採用した場合、光学部材60を実装基板20における上記所定位置に配置する際に液状の封止樹脂の一部が光学部材60と実装基板20とで囲まれる空間から溢れ出てレジスト層26の表面上に広がってしまい、当該溢れ出た封止樹脂からなる不要部での光吸収や当該不要部の凹凸に起因した光の乱反射などにより、装置全体としての光取り出し効率が低下してしまうことが考えられる。   However, when such a manufacturing method is adopted, when the optical member 60 is arranged at the predetermined position on the mounting substrate 20, a part of the liquid sealing resin is from a space surrounded by the optical member 60 and the mounting substrate 20. Overflowing and spreading on the surface of the resist layer 26, the light extraction of the entire apparatus due to light absorption at the unnecessary portion made of the overflowing sealing resin or irregular reflection of light due to the unevenness of the unnecessary portion, etc. It is conceivable that the efficiency decreases.

そこで、本実施形態の発光装置では、実装基板20の上記一表面において光学部材60のリング状の端縁に重なる部位と保護カバー70のリング状の端縁に重なる部位との間に、光学部材60と実装基板20とで囲まれる空間から溢れ出た封止樹脂を溜める複数の樹脂溜め用穴27を光学部材60の外周方向に離間して形成してある。ここで、樹脂溜め用穴27は、配線基板22に形成した貫通孔27aと伝熱板21において貫通孔27aに対応する部位に形成された凹部27bとで構成されており、配線基板22の厚みを薄くしても樹脂溜め用穴27の深さ寸法を大きくできて、樹脂溜め用穴27に溜めることが可能な封止樹脂の量を多くすることができ、しかも、樹脂溜め用穴27内で硬化した封止樹脂がLEDチップ10から保護カバー70への熱伝達を阻止する断熱部として機能することとなり、LEDチップ10の発熱に伴う保護カバー70の温度上昇を抑制できるから、LEDチップ10の発熱に起因した蛍光体の発光効率の低下を抑制することができる。   Therefore, in the light emitting device according to the present embodiment, the optical member is disposed between a portion overlapping the ring-shaped end edge of the optical member 60 and a portion overlapping the ring-shaped end edge of the protective cover 70 on the one surface of the mounting substrate 20. A plurality of resin reservoir holes 27 for storing the sealing resin overflowing from the space surrounded by 60 and the mounting substrate 20 are formed apart from each other in the outer peripheral direction of the optical member 60. Here, the resin reservoir hole 27 includes a through hole 27 a formed in the wiring substrate 22 and a recess 27 b formed in a portion corresponding to the through hole 27 a in the heat transfer plate 21, and the thickness of the wiring substrate 22. Even if the thickness of the resin reservoir hole 27 is reduced, the depth dimension of the resin reservoir hole 27 can be increased, and the amount of sealing resin that can be stored in the resin reservoir hole 27 can be increased. The sealing resin cured in step 1 functions as a heat insulating part that prevents heat transfer from the LED chip 10 to the protective cover 70, and the temperature rise of the protective cover 70 accompanying the heat generation of the LED chip 10 can be suppressed. It is possible to suppress a decrease in luminous efficiency of the phosphor due to the heat generation.

また、本実施形態の発光装置は、実装基板20の上記一表面側において光学部材60のリング状の端縁に重なる部位と保護カバー70のリング状の端縁と重なる部位との間に配置されて各樹脂溜め用穴27を覆うリング状の光吸収防止用基板140を備えており、各樹脂溜め用穴27内に溜まって硬化した封止樹脂からなる樹脂部による光吸収を、光吸収防止用基板140によって防止することができる。ここにおいて、光吸収防止用基板140は、実装基板20側とは反対の表面側にLEDチップ10や保護カバー70などからの光を反射する白色系のレジスト層が設けられているので、上記光の吸収を防止することができる。なお、光吸収防止用基板140は、光学部材60を実装基板20における所定位置に配置する際に溢れ出た封止樹脂が各樹脂溜め用穴27内に充填された後で、実装基板20の上記一表面側に載置すればよく、その後で封止樹脂を硬化させる際に封止樹脂により実装基板20に固着されることとなる。ここで、リング状の光吸収防止用基板140には、各樹脂溜め用穴27の微小領域を露出させる複数の切欠部142が形成されており、樹脂溜め用穴27内の封止樹脂を硬化させる際にボイドが発生するのを防止することができる。   In addition, the light emitting device of the present embodiment is disposed between the portion overlapping the ring-shaped end edge of the optical member 60 and the portion overlapping the ring-shaped end edge of the protective cover 70 on the one surface side of the mounting substrate 20. A ring-shaped light absorption preventing substrate 140 that covers each resin reservoir hole 27, and prevents light absorption by the resin portion made of the sealing resin that has accumulated and hardened in each resin reservoir hole 27. This can be prevented by the substrate 140 for use. Here, the light absorption preventing substrate 140 is provided with a white resist layer that reflects light from the LED chip 10 or the protective cover 70 on the surface side opposite to the mounting substrate 20 side. Can be prevented. The light absorption preventing substrate 140 is filled with the sealing resin overflowing when the optical member 60 is arranged at a predetermined position on the mounting substrate 20 in each resin reservoir hole 27, and What is necessary is just to mount on the said one surface side, and when hardening sealing resin after that, it will adhere to the mounting board | substrate 20 with sealing resin. Here, the ring-shaped light absorption preventing substrate 140 is formed with a plurality of notches 142 for exposing minute regions of the resin reservoir holes 27, and the sealing resin in the resin reservoir holes 27 is cured. It is possible to prevent voids from being generated.

また、本実施形態の発光装置では、シート状の接合用部材91の平面サイズを伝熱板21の平面サイズよりも大きく設定してあるので、接合用部材91と伝熱板21とが同じ平面サイズに形成されている場合に比べて、伝熱板21と金属部材である器具本体100との間の沿面距離を長くすることができ、照明器具用の光源として用いる場合の耐雷サージ性を高めることができる(ただし、一般的に屋内用の照明器具と屋外用の照明器具とで要求される発光装置と金属部材との沿面距離は異なり、屋外用の照明器具の方がより長い沿面距離を要求される)。ここにおいて、シート状の接合用部材91の厚みについては、耐雷サージ性の要求耐圧に応じて厚みを設計する必要があるが、熱抵抗を低減する観点からはより薄く設定することが望ましい。したがって、接合用部材91に関しては、厚みを設定した上で、沿面距離の要求を満足できるように平面サイズを設定すればよい。   Further, in the light emitting device of this embodiment, the planar size of the sheet-like joining member 91 is set larger than the planar size of the heat transfer plate 21, so that the joining member 91 and the heat transfer plate 21 are on the same plane. Compared with the case where it is formed in size, the creeping distance between the heat transfer plate 21 and the appliance main body 100 that is a metal member can be increased, and lightning surge resistance when used as a light source for a lighting fixture is improved. (However, the creepage distance between the light emitting device and the metal member, which is generally required for indoor lighting fixtures and outdoor lighting fixtures, is different, and outdoor lighting fixtures have a longer creepage distance. Required). Here, the thickness of the sheet-like joining member 91 needs to be designed in accordance with the lightning surge resistance required withstand voltage, but it is desirable to set it thinner from the viewpoint of reducing the thermal resistance. Therefore, regarding the joining member 91, after setting the thickness, the plane size may be set so as to satisfy the requirement of the creepage distance.

以上説明した本実施形態の発光装置では、実装基板20の上記一表面において光学部材60の実装基板20側の端縁に重なる部位と保護カバー70の実装基板20側の端縁に重なる部位との間に樹脂溜め用穴27が形成されているので、樹脂溜め用穴27に溜められた封止樹脂が保護カバー70を実装基板20に固着する際に溢れることがなく、実装基板20の上記一表面上に溢れ出た封止樹脂からなる不要部が形成されるのを抑制することができるから、当該不要部での光吸収や当該不要部の凹凸に起因した光の乱反射などによる光取り出し効率の低下を抑制することができ、光出力の高出力化を図れる。   In the light emitting device of the present embodiment described above, the portion of the one surface of the mounting substrate 20 that overlaps the edge of the optical member 60 on the mounting substrate 20 side and the portion of the protective cover 70 that overlaps the edge of the mounting substrate 20 side. Since the resin reservoir hole 27 is formed therebetween, the sealing resin stored in the resin reservoir hole 27 does not overflow when the protective cover 70 is fixed to the mounting substrate 20. Since it is possible to suppress the formation of unnecessary parts made of sealing resin overflowing on the surface, light extraction efficiency due to light absorption at the unnecessary parts and irregular reflection of light due to irregularities of the unnecessary parts Can be suppressed, and the light output can be increased.

ここにおいて、本実施形態の発光装置では、複数の樹脂溜め用穴27が光学部材60の外周方向に離間して複数設けられているので、実装基板20の上記一表面において光学部材60の実装基板20側の端縁に重なる部位と保護カバー70の実装基板20側の端縁に重なる部位との間の距離を短くしながらも、実装基板20の上記一表面上に封止樹脂からなる不要部が形成されるのを抑制することができ、また、導体パターン23,23が樹脂溜め用穴27により分離されるのを防止することができ、LEDチップ10への給電路の低抵抗化を図れる。   Here, in the light emitting device of this embodiment, since the plurality of resin reservoir holes 27 are provided apart from each other in the outer peripheral direction of the optical member 60, the mounting substrate of the optical member 60 on the one surface of the mounting substrate 20 is provided. An unnecessary portion made of a sealing resin on the one surface of the mounting substrate 20 while shortening the distance between the portion overlapping the edge on the 20 side and the portion overlapping the edge on the mounting substrate 20 side of the protective cover 70. Can be suppressed, and the conductor patterns 23 and 23 can be prevented from being separated by the resin reservoir hole 27, so that the resistance of the power supply path to the LED chip 10 can be reduced. .

ところで、上述の各実施形態では、LEDチップ10における結晶成長用基板としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、上記各実施形態では、LEDチップ10の両電極のうち一方の電極のみがLEDチップ10におけるベース部材とは反対側の一表面側に設けられているが、当該一表面側に両電極が設けられていてもよい。さらに、上記各実施形態では青色、赤色、緑色の3種類のLEDチップ10を使用しているが、橙色や黄色の光を放射するLEDチップ10を含めることで演色性を向上させるようにしても構わない。なお、橙色や黄色の光を放射するLEDチップは、例えばGaAsP系化合物半導体材料で形成すればよい。また、必ずしも複数のLEDチップ10の発光色を互いに異ならせる必要はなく、全て同じ発光色のLEDチップ10としても構わない。さらに、複数のLEDチップ10の発光色を全て同じとした場合、保護カバー70に蛍光体を混入することで当該蛍光体により色変換を行うようにしてもよい。例えば、複数のLEDチップ10の発光色を全て青色とし、LEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を保護カバー70に混入すれば、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが保護カバー70の外周面70bを通して放射されることとなり、白色光を得ることができる。但し、黄色蛍光体の代わりに赤色蛍光体や緑色蛍光体を用いても構わない。ここで、保護カバー70と光学部材60の光出射面60bとの間に空気層80が形成されているので、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点や、保護カバー70に混入した蛍光体で発生した熱がLEDチップ10へ伝熱されるのを抑制することができるという利点もある。   By the way, in each above-mentioned embodiment, although a SiC substrate is adopted as a substrate for crystal growth in LED chip 10, a GaN substrate may be used instead of a SiC substrate, and when a SiC substrate or a GaN substrate is used. Compared to the case where a sapphire substrate which is an insulator is used as the crystal growth substrate, the thermal conductivity of the crystal growth substrate is high and the thermal resistance of the crystal growth substrate can be reduced. Moreover, in each said embodiment, although only one electrode is provided in the one surface side on the opposite side to the base member in the LED chip 10, both electrodes are provided in the said one surface side. It may be provided. Further, in each of the above embodiments, three types of LED chips 10 of blue, red, and green are used. However, the color rendering property may be improved by including the LED chip 10 that emits orange or yellow light. I do not care. In addition, what is necessary is just to form the LED chip which radiates | emits orange and yellow light, for example with a GaAsP type compound semiconductor material. Further, it is not always necessary to make the light emission colors of the plurality of LED chips 10 different from each other, and all the LED chips 10 having the same light emission color may be used. Furthermore, when the light emission colors of the plurality of LED chips 10 are all the same, the phosphor may be mixed into the protective cover 70 to perform color conversion using the phosphor. For example, the emission color of the plurality of LED chips 10 is all blue, and a particulate yellow phosphor that emits broad yellow light when excited by blue light emitted from the LED chip 10 is mixed into the protective cover 70. For example, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer peripheral surface 70b of the protective cover 70, and white light can be obtained. However, a red phosphor or a green phosphor may be used instead of the yellow phosphor. Here, since the air layer 80 is formed between the protective cover 70 and the light emitting surface 60 b of the optical member 60, the advantage that moisture in the external atmosphere hardly reaches the LED chip 10, and the protective cover 70. There is also an advantage that heat generated in the phosphor mixed in can be suppressed from being transferred to the LED chip 10.

本発明の実施形態1を示す断面図である。It is sectional drawing which shows Embodiment 1 of this invention. 同上の分解斜視図である。It is an exploded perspective view same as the above. 同上の要部の平面図である。It is a top view of the principal part same as the above. 本発明の実施形態2を示す概略断面図である。It is a schematic sectional drawing which shows Embodiment 2 of this invention. 同上を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic exploded perspective view of the lighting fixture using the same as the above. 同上の製造方法の説明図である。It is explanatory drawing of a manufacturing method same as the above. 同上の概略分解斜視図である。It is a schematic exploded perspective view same as the above.

符号の説明Explanation of symbols

10 LEDチップ
20 実装基板
21 金属板
22 配線基板
23 導体パターン
30 サブマウント部材
40 枠体
50 封止部
60 光学部材(レンズ)
70 保護カバー
DESCRIPTION OF SYMBOLS 10 LED chip 20 Mounting board 21 Metal plate 22 Wiring board 23 Conductor pattern 30 Submount member 40 Frame 50 Sealing part 60 Optical member (lens)
70 protective cover

Claims (1)

複数のLEDチップと、これら複数のLEDチップが実装された実装基板と、透明樹脂材料からなり実装基板におけるLEDチップの実装面側で全てのLEDチップ及び当該各LEDチップに接続されたボンディングワイヤを封止する封止部と、封止部に重ねて配置される光学部材と、透明材料を成形した成形品であって光学部材の光出射面側に光学部材を覆い且つ当該光出射面との間に空気層が形成される形で配設されるドーム状の保護カバーとを備えたことを特徴とする発光装置。 A plurality of LED chips, a mounting substrate on which the plurality of LED chips are mounted, and all LED chips and bonding wires connected to the LED chips on the mounting surface side of the LED chip on the mounting substrate made of a transparent resin material. A sealing part to be sealed; an optical member disposed on the sealing part; and a molded product obtained by molding a transparent material, covering the optical member on the light emitting surface side of the optical member and the light emitting surface . A light emitting device comprising: a dome-shaped protective cover disposed in a form in which an air layer is formed therebetween.
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