JP2009130084A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009130084A JP2009130084A JP2007302685A JP2007302685A JP2009130084A JP 2009130084 A JP2009130084 A JP 2009130084A JP 2007302685 A JP2007302685 A JP 2007302685A JP 2007302685 A JP2007302685 A JP 2007302685A JP 2009130084 A JP2009130084 A JP 2009130084A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor layer
- pin diode
- layer
- intrinsic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 173
- 239000012535 impurity Substances 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000003486 chemical etching Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 52
- 238000000034 method Methods 0.000 description 24
- 239000013078 crystal Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000010295 mobile communication Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
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- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007302685A JP2009130084A (ja) | 2007-11-22 | 2007-11-22 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007302685A JP2009130084A (ja) | 2007-11-22 | 2007-11-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009130084A true JP2009130084A (ja) | 2009-06-11 |
| JP2009130084A5 JP2009130084A5 (https=) | 2011-01-13 |
Family
ID=40820717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007302685A Pending JP2009130084A (ja) | 2007-11-22 | 2007-11-22 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009130084A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011229029A (ja) * | 2010-04-21 | 2011-11-10 | Nec Network & Sensor Systems Ltd | 高周波切替回路 |
| WO2022188198A1 (zh) * | 2021-03-08 | 2022-09-15 | 武汉华星光电技术有限公司 | 驱动基板、显示面板及驱动基板的制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812371A (ja) * | 1981-07-15 | 1983-01-24 | Nec Corp | 半導体装置 |
| JP2003152196A (ja) * | 2001-11-12 | 2003-05-23 | Sanken Electric Co Ltd | 半導体素子 |
| JP2005005486A (ja) * | 2003-06-12 | 2005-01-06 | Shindengen Electric Mfg Co Ltd | 炭化けい素半導体装置 |
-
2007
- 2007-11-22 JP JP2007302685A patent/JP2009130084A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812371A (ja) * | 1981-07-15 | 1983-01-24 | Nec Corp | 半導体装置 |
| JP2003152196A (ja) * | 2001-11-12 | 2003-05-23 | Sanken Electric Co Ltd | 半導体素子 |
| JP2005005486A (ja) * | 2003-06-12 | 2005-01-06 | Shindengen Electric Mfg Co Ltd | 炭化けい素半導体装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011229029A (ja) * | 2010-04-21 | 2011-11-10 | Nec Network & Sensor Systems Ltd | 高周波切替回路 |
| WO2022188198A1 (zh) * | 2021-03-08 | 2022-09-15 | 武汉华星光电技术有限公司 | 驱动基板、显示面板及驱动基板的制备方法 |
| US12135486B2 (en) | 2021-03-08 | 2024-11-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Driving substrate, display panel, and manufacturing method of driving substrate |
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