JP2009123822A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】半導体素子を搭載した基板を成形金型内に配置する基板配置工程と、所定温度で発泡を開始する未発泡体を該基板の所定位置に配置する未発泡体配置工程とを備える。さらに該基板配置工程および該未発泡体配置工程の後に、該成形金型内に該所定温度以上の熱可塑性樹脂を注入する熱可塑性樹脂注入工程を備える。また、該熱可塑性樹脂注入工程の後に該熱可塑性樹脂を冷却する冷却工程を備える。そして、該冷却工程で該熱可塑性樹脂が固化するまで又は有意な固化を終えるまでは該発泡体が発泡状態を継続する。
【選択図】なし
Description
本実施形態は、良好な絶縁特性を備える半導体装置および、簡易かつ安価なプロセスで良好な絶縁特性を備える半導体装置を製造する半導体装置の製造方法に関する。図1は本実施形態の半導体装置100の外観について説明する斜視図である。本実施形態の半導体装置100は電力用半導体装置である。半導体装置100は筐体11を備える。筐体11は後述する各部品を覆うようにモールド形成されているものである。筐体11は例えばガラス繊維を配合することによりその強度を向上させた、熱可塑性樹脂であるPPS樹脂(ポリフェニレンサルファイド樹脂)からなる。
本実施形態は、未発泡体が発泡状態となるタイミングを制御し、より絶縁特性を高めた半導体装置を製造する製造方法に関する。図13は本実施形態の筐体形成前の構成を説明するための図である。本実施形態の基板は実施の形態1と同様である。そして、未発泡体を搭載した基板である「筐体形成前基板」の構成が実施の形態1と異なる。すなわち、図13に示されるように、未発泡体として、第一未発泡体180と第二未発泡体182とを備える。第一未発泡体180と第二未発泡体182とは所定距離だけ離隔して配置されている。第一未発泡体180、第二未発泡体182ともに実施の形態1で説明した外殻と同一の外殻に覆われている。第一未発泡体180が備える外殻を第一外殻、第二未発泡体182が備える外殻は第二外殻と称する。第一外殻は第一未発泡樹脂を覆う。一方第二外殻は第二未発泡樹脂を覆う。
本実施形態の筐体形成前基板は上述の通りの構成である。そして、本実施形態における後続の工程は実施形態1と同様である。但し、図4に示すフローチャートの破線部は本実施形態の特徴を説明するものではない。
本実施形態は、熱可塑性樹脂で筐体が形成され、良好な耐電圧および絶縁特性を備える半導体装置およびその製造方法に関する。本実施形態の半導体装置の斜視図は実施形態1で説明した図1と同じである。また、図14は本実施形態の筐体形成前基板である。本実施形態の筐体形成前基板は実施形態1と以下の点を除き同様の構成である。すなわち、本実施形態の筐体形成前基板は高耐圧樹脂198を備える。高耐圧樹脂198はPPS樹脂や発泡後樹脂より耐圧の高い樹脂である。本実施形態において、このような高耐圧樹脂198は入出力端子12と配線パターン17との接合箇所近傍に配置されている。なお、図15は成形金型内に搭載された本実施形態の筐体形成前基板を説明する図である。図15は図1においてB−Bで矢示される方向から本実施形態の筐体形成前基板を表した図である。筐体形成前基板は実施形態1と同様に成形金型に搭載される。筐体形成前基板が成形金型に搭載された後の工程は実施の形態1と同様であるから説明を省略する。
本実施形態は筐体のうち、素子を覆う部分が発泡後樹脂で構成される半導体装置およびその製造方法に関する。図16は本実施形態の内部構造を示す図である。これは筐体形成前基板であり、本実施形態の筐体形成前基板には未発泡体は配置されていない。また、図17は本実施形態の半導体装置の斜視図である。また、図18は図17のA−A矢示図である。
12 入出力端子
17 配線パターン
18 IGBT
19 ダイオード
100 半導体装置
113 下型(成形金型)
114 上型(成形金型)
115 発泡後樹脂
116 未発泡体
117 外殻
118 未発泡樹脂
170 発泡後樹脂
180 第一未発泡体
182 第二未発泡体
Claims (10)
- 半導体素子を搭載した基板を成形金型内に配置する基板配置工程と、
所定温度で発泡を開始する未発泡体を前記基板の所定位置に配置する未発泡体配置工程と、
前記基板配置工程および前記未発泡体配置工程の後に前記成形金型内に前記所定温度以上の熱可塑性樹脂を注入する熱可塑性樹脂注入工程と、
前記熱可塑性樹脂注入工程の後に前記熱可塑性樹脂を冷却する冷却工程とを備え、
前記冷却工程で前記熱可塑性樹脂が固化するまで又は有意な固化を終えるまでは前記発泡体が発泡状態を継続することを特徴とする半導体装置の製造方法。 - 前記未発泡体配置工程で前記所定位置に配置する前記未発泡体は前記未発泡体を囲む外殻に覆われ、
前記熱可塑性樹脂注入工程の後に前記熱可塑性樹脂に所定圧力を加えその後前記所定圧力を維持する保圧工程を備え、
前記外殻は前記所定圧力で破裂することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記熱可塑性樹脂はPPS樹脂(ポリフェニレンサルファイド樹脂)であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記未発泡体配置工程では帯状に成形された前記未発泡体が前記基板の所定位置に搭載されることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記未発泡体配置工程は、
第一外殻に囲まれた第一未発泡体を配置する第一未発泡体配置工程と、
第二外殻に囲まれ前記第一未発泡体と混合すると発泡する第二未発泡体を配置する第二未発泡体配置工程とを備え、
前記第一外殻と前記第二外殻は前記所定圧力で破裂し、
前記第一未発泡体と前記第二未発泡体との距離は、前記第一外殻および前記第二外殻が破裂したときに前記第一未発泡体と前記第二未発泡体とが混合する距離であることを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記基板の電界集中領域に前記未発泡体より耐電圧の高い高耐圧樹脂を塗布する高耐圧樹脂塗布工程を備えることを特徴とする請求項1に記載の半導体装置の製造方法。
- 半導体素子を搭載した基板を成形金型内に配置する基板配置工程と、
前記基板配置工程の後、発泡状態にある発泡体を前記成形金型内に注入する発泡体注入工程とを備えることを特徴とする半導体装置の製造方法。 - 所定温度以上で発泡する未発泡体と半導体素子を搭載した基板を成形金型内に配置する基板配置工程と、
前記基板配置工程の後に前記未発泡体の温度を前記所定温度以上に上昇させる温度上昇工程と、
を備えることを特徴とする半導体装置の製造方法。 - 前記基板配置工程前に、前記基板の端子固定部分に熱可塑性樹脂を塗布する補強工程を備えることを特徴とする請求項7又は8に記載の半導体装置の製造方法。
- 半導体素子と、
前記半導体素子を搭載した基板と、
前記半導体素子の一部又は全体と接する発泡後樹脂と、
前記基板を覆うように形成され筐体を構成する熱可塑性樹脂と、
を備えることを特徴とする半導体装置。
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Citations (5)
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JPH07302809A (ja) * | 1994-04-28 | 1995-11-14 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置とその製造方法 |
JPH09123653A (ja) * | 1995-11-06 | 1997-05-13 | Toppan Printing Co Ltd | Icカードおよびicカードの製造方法 |
JPH09307028A (ja) * | 1996-05-14 | 1997-11-28 | Nec Corp | 高周波用電子部品および高周波用電子部品の製造方法 |
JPH10270602A (ja) * | 1997-03-27 | 1998-10-09 | Fujitsu Ten Ltd | 電子回路装置、該電子回路装置の封止層の形成方法、回路基板、及び前記封止層の形成に使用する金型 |
JP2006111018A (ja) * | 2005-11-09 | 2006-04-27 | Daicel Polymer Ltd | 樹脂封止方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07302809A (ja) * | 1994-04-28 | 1995-11-14 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置とその製造方法 |
JPH09123653A (ja) * | 1995-11-06 | 1997-05-13 | Toppan Printing Co Ltd | Icカードおよびicカードの製造方法 |
JPH09307028A (ja) * | 1996-05-14 | 1997-11-28 | Nec Corp | 高周波用電子部品および高周波用電子部品の製造方法 |
JPH10270602A (ja) * | 1997-03-27 | 1998-10-09 | Fujitsu Ten Ltd | 電子回路装置、該電子回路装置の封止層の形成方法、回路基板、及び前記封止層の形成に使用する金型 |
JP2006111018A (ja) * | 2005-11-09 | 2006-04-27 | Daicel Polymer Ltd | 樹脂封止方法 |
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