JP2009076749A - Led装置及びその製造方法 - Google Patents
Led装置及びその製造方法 Download PDFInfo
- Publication number
- JP2009076749A JP2009076749A JP2007245423A JP2007245423A JP2009076749A JP 2009076749 A JP2009076749 A JP 2009076749A JP 2007245423 A JP2007245423 A JP 2007245423A JP 2007245423 A JP2007245423 A JP 2007245423A JP 2009076749 A JP2009076749 A JP 2009076749A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- light emitting
- light
- led device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 127
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- 239000000758 substrate Substances 0.000 claims description 24
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 229910052684 Cerium Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000007733 ion plating Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
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- 229920000178 Acrylic resin Polymers 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- FZTPSPNAZCIDGO-UHFFFAOYSA-N barium(2+);silicate Chemical compound [Ba+2].[Ba+2].[O-][Si]([O-])([O-])[O-] FZTPSPNAZCIDGO-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
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- 238000009718 spray deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007245423A JP2009076749A (ja) | 2007-09-21 | 2007-09-21 | Led装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007245423A JP2009076749A (ja) | 2007-09-21 | 2007-09-21 | Led装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009076749A true JP2009076749A (ja) | 2009-04-09 |
JP2009076749A5 JP2009076749A5 (enrdf_load_stackoverflow) | 2009-12-17 |
Family
ID=40611431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007245423A Pending JP2009076749A (ja) | 2007-09-21 | 2007-09-21 | Led装置及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2009076749A (enrdf_load_stackoverflow) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101041068B1 (ko) * | 2009-06-29 | 2011-06-13 | 주식회사 프로텍 | 서브 마운트 기판을 이용한 발광 다이오드 제조 방법 |
CN102097425A (zh) * | 2009-12-09 | 2011-06-15 | 三星Led株式会社 | 发光二极管、制造磷光体层的方法和发光装置 |
CN102148139A (zh) * | 2010-12-31 | 2011-08-10 | 东莞市中镓半导体科技有限公司 | 改进的激光准剥离消除GaN外延片残余应力的方法 |
JP2012044131A (ja) * | 2010-08-23 | 2012-03-01 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光装置の製造方法 |
JP2013026590A (ja) * | 2011-07-26 | 2013-02-04 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP2013077825A (ja) * | 2012-11-26 | 2013-04-25 | Dexerials Corp | 緑色発光蛍光体粒子、色変換シート、発光装置及び画像表示装置組立体 |
WO2013061781A1 (ja) * | 2011-10-24 | 2013-05-02 | コニカミノルタIj株式会社 | 塗布組成物及び発光装置の製造方法 |
JP2013521652A (ja) * | 2010-03-03 | 2013-06-10 | クリー インコーポレイテッド | 光学素子に光学材料を塗布するためのシステム及び方法 |
JP2013138209A (ja) * | 2011-12-27 | 2013-07-11 | Advanced Optoelectronic Technology Inc | 発光ダイオードパッケージの製造方法 |
CN103367209A (zh) * | 2013-07-26 | 2013-10-23 | 东莞市中镓半导体科技有限公司 | 一种液体辅助激光剥离方法 |
JP2014146783A (ja) * | 2013-01-29 | 2014-08-14 | Lg Innotek Co Ltd | ランプユニット |
JP2015057826A (ja) * | 2013-09-16 | 2015-03-26 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2015142011A (ja) * | 2014-01-29 | 2015-08-03 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
KR20160099285A (ko) * | 2015-02-12 | 2016-08-22 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2016194709A (ja) * | 2016-06-23 | 2016-11-17 | セイコーエプソン株式会社 | 光源装置及びプロジェクター |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
JP2017220530A (ja) * | 2016-06-06 | 2017-12-14 | シチズン電子株式会社 | 発光装置の製造方法 |
JP2018107355A (ja) * | 2016-12-27 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JPWO2020241511A1 (enrdf_load_stackoverflow) * | 2019-05-24 | 2020-12-03 | ||
JP2021533576A (ja) * | 2018-08-17 | 2021-12-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子部品及び光電子部品を製造するための方法 |
CN116096823A (zh) * | 2020-08-07 | 2023-05-09 | 电化株式会社 | 荧光体涂料、涂膜、荧光体基板和照明装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003034508A1 (fr) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Dispositif d'emission de lumiere et procede de fabrication de celui-ci |
JP2007123943A (ja) * | 2007-02-09 | 2007-05-17 | Sharp Corp | 発光装置 |
JP2007238815A (ja) * | 2006-03-09 | 2007-09-20 | Toshiba Corp | 発光装置用蛍光体および発光装置 |
-
2007
- 2007-09-21 JP JP2007245423A patent/JP2009076749A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003034508A1 (fr) * | 2001-10-12 | 2003-04-24 | Nichia Corporation | Dispositif d'emission de lumiere et procede de fabrication de celui-ci |
JP2007238815A (ja) * | 2006-03-09 | 2007-09-20 | Toshiba Corp | 発光装置用蛍光体および発光装置 |
JP2007123943A (ja) * | 2007-02-09 | 2007-05-17 | Sharp Corp | 発光装置 |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8940561B2 (en) | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
KR101041068B1 (ko) * | 2009-06-29 | 2011-06-13 | 주식회사 프로텍 | 서브 마운트 기판을 이용한 발광 다이오드 제조 방법 |
US8558246B2 (en) | 2009-12-09 | 2013-10-15 | Samsung Electronics Co., Ltd. | Light emitting diode, method for fabricating phosphor layer, and lighting apparatus |
CN102097425A (zh) * | 2009-12-09 | 2011-06-15 | 三星Led株式会社 | 发光二极管、制造磷光体层的方法和发光装置 |
JP2013521652A (ja) * | 2010-03-03 | 2013-06-10 | クリー インコーポレイテッド | 光学素子に光学材料を塗布するためのシステム及び方法 |
JP2012044131A (ja) * | 2010-08-23 | 2012-03-01 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光装置の製造方法 |
CN102148139A (zh) * | 2010-12-31 | 2011-08-10 | 东莞市中镓半导体科技有限公司 | 改进的激光准剥离消除GaN外延片残余应力的方法 |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
JP2013026590A (ja) * | 2011-07-26 | 2013-02-04 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JPWO2013061781A1 (ja) * | 2011-10-24 | 2015-04-02 | コニカミノルタ株式会社 | 塗布組成物及び発光装置の製造方法 |
WO2013061781A1 (ja) * | 2011-10-24 | 2013-05-02 | コニカミノルタIj株式会社 | 塗布組成物及び発光装置の製造方法 |
JP2013138209A (ja) * | 2011-12-27 | 2013-07-11 | Advanced Optoelectronic Technology Inc | 発光ダイオードパッケージの製造方法 |
JP2013077825A (ja) * | 2012-11-26 | 2013-04-25 | Dexerials Corp | 緑色発光蛍光体粒子、色変換シート、発光装置及び画像表示装置組立体 |
JP2014146783A (ja) * | 2013-01-29 | 2014-08-14 | Lg Innotek Co Ltd | ランプユニット |
CN103367209A (zh) * | 2013-07-26 | 2013-10-23 | 东莞市中镓半导体科技有限公司 | 一种液体辅助激光剥离方法 |
JP2015057826A (ja) * | 2013-09-16 | 2015-03-26 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2015142011A (ja) * | 2014-01-29 | 2015-08-03 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
KR20160099285A (ko) * | 2015-02-12 | 2016-08-22 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR102344533B1 (ko) | 2015-02-12 | 2021-12-29 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2017220530A (ja) * | 2016-06-06 | 2017-12-14 | シチズン電子株式会社 | 発光装置の製造方法 |
JP2016194709A (ja) * | 2016-06-23 | 2016-11-17 | セイコーエプソン株式会社 | 光源装置及びプロジェクター |
JP2018107355A (ja) * | 2016-12-27 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6998114B2 (ja) | 2016-12-27 | 2022-02-04 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2021533576A (ja) * | 2018-08-17 | 2021-12-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子部品及び光電子部品を製造するための方法 |
US11552228B2 (en) | 2018-08-17 | 2023-01-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
JPWO2020241511A1 (enrdf_load_stackoverflow) * | 2019-05-24 | 2020-12-03 | ||
WO2020241511A1 (ja) * | 2019-05-24 | 2020-12-03 | 日本精機株式会社 | ヘッドアップディスプレイ、その製造方法、及び照明装置の製造方法 |
CN116096823A (zh) * | 2020-08-07 | 2023-05-09 | 电化株式会社 | 荧光体涂料、涂膜、荧光体基板和照明装置 |
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