JP2009027157A - カーボンナノチューブベースの電気的接続の製造方法 - Google Patents

カーボンナノチューブベースの電気的接続の製造方法 Download PDF

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Publication number
JP2009027157A
JP2009027157A JP2008163376A JP2008163376A JP2009027157A JP 2009027157 A JP2009027157 A JP 2009027157A JP 2008163376 A JP2008163376 A JP 2008163376A JP 2008163376 A JP2008163376 A JP 2008163376A JP 2009027157 A JP2009027157 A JP 2009027157A
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Japan
Prior art keywords
layer
catalyst
deposition
deposited
insulating material
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JP2008163376A
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English (en)
Japanese (ja)
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JP2009027157A5 (https=
Inventor
Jean-Christophe Coiffic
ジャン‐クリストフ、コワフィ
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JP2009027157A publication Critical patent/JP2009027157A/ja
Publication of JP2009027157A5 publication Critical patent/JP2009027157A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0554—Manufacture or treatment of conductive parts of the interconnections of nanotubes or nanowires

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2008163376A 2007-06-22 2008-06-23 カーボンナノチューブベースの電気的接続の製造方法 Pending JP2009027157A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0704464A FR2917893B1 (fr) 2007-06-22 2007-06-22 Procede de fabrication d'une connexion electrique a base de nanotubes de carbone

Publications (2)

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JP2009027157A true JP2009027157A (ja) 2009-02-05
JP2009027157A5 JP2009027157A5 (https=) 2011-07-28

Family

ID=38754704

Family Applications (1)

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JP2008163376A Pending JP2009027157A (ja) 2007-06-22 2008-06-23 カーボンナノチューブベースの電気的接続の製造方法

Country Status (4)

Country Link
US (1) US20080317947A1 (https=)
EP (1) EP2006901A3 (https=)
JP (1) JP2009027157A (https=)
FR (1) FR2917893B1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061026A (ja) * 2009-09-10 2011-03-24 Toshiba Corp カーボンナノチューブ配線及びその製造方法
WO2011111524A1 (ja) * 2010-03-09 2011-09-15 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
JP2012049261A (ja) * 2010-08-25 2012-03-08 Toshiba Corp カーボンナノチューブ配線の製造方法
JP2012074682A (ja) * 2010-08-29 2012-04-12 Shibaura Institute Of Technology 配線パターンの形成方法
JP2014175451A (ja) * 2013-03-08 2014-09-22 Toshiba Corp 半導体装置及びその製造方法
KR101750795B1 (ko) * 2013-06-27 2017-06-26 인텔 아이피 코포레이션 전자 시스템을 위한 고 전도성 고 주파수 비아
KR20220034643A (ko) * 2020-09-11 2022-03-18 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스의 상호연결 구조물
US12322649B2 (en) 2020-09-11 2025-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure of semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989349B2 (en) 2005-04-15 2011-08-02 Micron Technology, Inc. Methods of manufacturing nanotubes having controlled characteristics
US9099537B2 (en) * 2009-08-28 2015-08-04 International Business Machines Corporation Selective nanotube growth inside vias using an ion beam
US9607955B2 (en) * 2010-11-10 2017-03-28 Cree, Inc. Contact pad
CN102543835B (zh) * 2010-12-15 2015-05-13 中国科学院微电子研究所 开口的填充方法

Citations (7)

* Cited by examiner, † Cited by third party
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JP2000091425A (ja) * 1998-09-07 2000-03-31 Nec Corp 半導体装置の製造方法
JP2001023925A (ja) * 1999-07-08 2001-01-26 Ebara Corp 半導体装置及びその製造方法
JP2003523608A (ja) * 2000-02-16 2003-08-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフト カーボンナノチューブからなる電気的に導電性の接続を有する電子部品とその製造方法
JP2004241572A (ja) * 2003-02-05 2004-08-26 Sony Corp 半導体装置及びその製造方法
JP2005285821A (ja) * 2004-03-26 2005-10-13 Fujitsu Ltd 半導体装置およびその製造方法
WO2006043329A1 (ja) * 2004-10-22 2006-04-27 Fujitsu Limited 半導体装置及びその製造方法
JP2006148063A (ja) * 2004-10-22 2006-06-08 Renesas Technology Corp 配線構造、半導体装置、ｍｒａｍおよび半導体装置の製造方法

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GB2262654B (en) * 1991-12-13 1995-07-12 Marconi Gec Ltd Fabrication process
US6787460B2 (en) * 2002-01-14 2004-09-07 Samsung Electronics Co., Ltd. Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
US7374793B2 (en) * 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
US7129097B2 (en) * 2004-07-29 2006-10-31 International Business Machines Corporation Integrated circuit chip utilizing oriented carbon nanotube conductive layers
KR100718112B1 (ko) * 2005-11-02 2007-05-14 삼성에스디아이 주식회사 탄소나노튜브를 이용한 수직 배선구조 및 그 제조방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091425A (ja) * 1998-09-07 2000-03-31 Nec Corp 半導体装置の製造方法
JP2001023925A (ja) * 1999-07-08 2001-01-26 Ebara Corp 半導体装置及びその製造方法
JP2003523608A (ja) * 2000-02-16 2003-08-05 インフィネオン テクノロジーズ アクチエンゲゼルシャフト カーボンナノチューブからなる電気的に導電性の接続を有する電子部品とその製造方法
JP2004241572A (ja) * 2003-02-05 2004-08-26 Sony Corp 半導体装置及びその製造方法
JP2005285821A (ja) * 2004-03-26 2005-10-13 Fujitsu Ltd 半導体装置およびその製造方法
WO2006043329A1 (ja) * 2004-10-22 2006-04-27 Fujitsu Limited 半導体装置及びその製造方法
JP2006148063A (ja) * 2004-10-22 2006-06-08 Renesas Technology Corp 配線構造、半導体装置、ｍｒａｍおよび半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6013012549; Ｍｉｚｕｈｉｓａ　Ｎｉｈｅｉ、外１０名: 'Ｅｌｅｃｔｒｉｃａｌ　Ｐｒｏｐｅｒｔｉｅｓ　ｏｆ　Ｃａｒｂｏｎ　Ｎａｎｏｔｕｂｅ　Ｖｉａ　Ｉｎｔｅｒｃｏｎｎｅｃｔｓ　Ｆａｂｒｉｃａｔｅｄ　ｂｙ　Ｎｏｖｅｌ　Ｄａｍａｓｃｅｎｅ　Ｐｒｏｃｅｓｓ' Ｉｎｔｅｒｎａｔｉｏｎａｌ　Ｉｎｔｅｒｃｏｎｎｅｃｔ　Ｔｅｃｈｎｏｌｏｇｙ　Ｃｏｎｆｅｒｅｎｃｅ，　ＩＥＥＥ　２００７ , 20070606, ｐｐ．　２０４-２０６ *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061026A (ja) * 2009-09-10 2011-03-24 Toshiba Corp カーボンナノチューブ配線及びその製造方法
WO2011111524A1 (ja) * 2010-03-09 2011-09-15 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
JP2011187704A (ja) * 2010-03-09 2011-09-22 Tokyo Electron Ltd 基板の配線方法及び半導体製造装置
US8940638B2 (en) 2010-03-09 2015-01-27 Tokyo Electron Limited Substrate wiring method and semiconductor manufacturing device
JP2012049261A (ja) * 2010-08-25 2012-03-08 Toshiba Corp カーボンナノチューブ配線の製造方法
US8487449B2 (en) 2010-08-25 2013-07-16 Kabushiki Kaisha Toshiba Carbon nanotube interconnection and manufacturing method thereof
JP2012074682A (ja) * 2010-08-29 2012-04-12 Shibaura Institute Of Technology 配線パターンの形成方法
JP2014175451A (ja) * 2013-03-08 2014-09-22 Toshiba Corp 半導体装置及びその製造方法
KR101750795B1 (ko) * 2013-06-27 2017-06-26 인텔 아이피 코포레이션 전자 시스템을 위한 고 전도성 고 주파수 비아
KR20220034643A (ko) * 2020-09-11 2022-03-18 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스의 상호연결 구조물
KR102582864B1 (ko) 2020-09-11 2023-09-25 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스의 상호연결 구조물
US12322649B2 (en) 2020-09-11 2025-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure of semiconductor device

Also Published As

Publication number Publication date
EP2006901A2 (fr) 2008-12-24
EP2006901A3 (fr) 2011-01-19
FR2917893B1 (fr) 2009-08-28
FR2917893A1 (fr) 2008-12-26
US20080317947A1 (en) 2008-12-25

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