JP2009016621A - 半導体パッケージ用放熱プレート及び半導体装置 - Google Patents
半導体パッケージ用放熱プレート及び半導体装置 Download PDFInfo
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- JP2009016621A JP2009016621A JP2007177636A JP2007177636A JP2009016621A JP 2009016621 A JP2009016621 A JP 2009016621A JP 2007177636 A JP2007177636 A JP 2007177636A JP 2007177636 A JP2007177636 A JP 2007177636A JP 2009016621 A JP2009016621 A JP 2009016621A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1056—Perforating lamina
- Y10T156/1057—Subsequent to assembly of laminae
Abstract
【解決手段】プレート本体10を、銅層11cとグラファイト層12とモリブデン層13を交互に複数積層して、その両面に外部銅層11a,11bを設けて、その周縁に銅とモリブデンを配合した枠部15を設けて構成したものである。
【選択図】 図1
Description
なお、この発明は、上記実施の形態に限ることなく、その他、例えば図5、図6、図7、図8、図9に示すようにプレート本体10a,10b,10c,10d,10eを構成することも可能で、同様に有効な効果が期待される。但し、この図5乃至図9の実施の形態においては、上記図1乃至4と同一部分について同一符号を付して、その詳細な説明を省略する。
Claims (8)
- 銅層とグラファイト層とモリブデン層が交互に複数積層されるものであって、両面に前記銅層が設けられ、且つ、周縁に銅、または銅とモリブデンを配合した枠部を設けた半導体素子の搭載されるプレート本体を具備することを特徴する半導体パッケージ用放熱プレート。
- 前記プレート本体は、前記枠部を銅で形成して、該枠部を一方の面の銅層と一体的に形成したことを特徴とする請求項1記載の半導体パッケージ用放熱プレート。
- 前記プレート本体は、前記半導体素子を搭載する素子搭載部位が、前記銅層を積層して形成されることを特徴とする請求項1又は2記載の半導体パッケージ用放熱プレート。
- 前記プレート本体の素子搭載部は、一方の面の銅層及び前記枠部と一体的に設けられることを特徴とする請求項3記載の半導体パッケージ用放熱プレート。
- 前記プレート本体は、前記半導体素子を搭載する素子搭載部位が、前記銅層及びモリブデン層を配合して形成されることを特徴とする請求項1又は2記載の半導体パッケージ用放熱プレート。
- 前記プレート本体は、両面の銅層が内層される銅層に比して厚く形成されることを特徴とする請求項1乃至5のいずれか記載の半導体パッケージ用放熱プレート。
- 前記プレート本体は、銅層とグラファイト層の体積比が同じに設定されていることを特徴とする請求項1乃至6のいずれか記載の半導体パッケージ用放熱プレート。
- 半導体チップと基板とで形成される半導体素子と、
この半導体素子が収容配置されるものであって、銅層とグラファイト層とモリブデン層が交互に複数積層され、両面に前記銅層が設けられ、且つ、周縁に銅、または銅とモリブデンを配合した枠部が設けられたプレート本体上に前記半導体素子を囲んで、該半導体素子と電気的に接続される外部接続端子の設けられた枠材が配置されて、この枠材の開口に蓋体が被着される半導体パッケージと、
を具備することを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007177636A JP4558012B2 (ja) | 2007-07-05 | 2007-07-05 | 半導体パッケージ用放熱プレート及び半導体装置 |
US12/164,396 US7745928B2 (en) | 2007-07-05 | 2008-06-30 | Heat dissipation plate and semiconductor device |
TW097124724A TWI438877B (zh) | 2007-07-05 | 2008-07-01 | 半導體封裝用散熱板及半導體裝置 |
KR1020080064762A KR101015294B1 (ko) | 2007-07-05 | 2008-07-04 | 반도체 패키지용 방열 플레이트 및 반도체 장치 |
EP08252304A EP2012355A3 (en) | 2007-07-05 | 2008-07-04 | Heat dissipation plate and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007177636A JP4558012B2 (ja) | 2007-07-05 | 2007-07-05 | 半導体パッケージ用放熱プレート及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009016621A true JP2009016621A (ja) | 2009-01-22 |
JP4558012B2 JP4558012B2 (ja) | 2010-10-06 |
Family
ID=39765063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007177636A Expired - Fee Related JP4558012B2 (ja) | 2007-07-05 | 2007-07-05 | 半導体パッケージ用放熱プレート及び半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7745928B2 (ja) |
EP (1) | EP2012355A3 (ja) |
JP (1) | JP4558012B2 (ja) |
KR (1) | KR101015294B1 (ja) |
TW (1) | TWI438877B (ja) |
Cited By (2)
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JP2010192701A (ja) * | 2009-02-18 | 2010-09-02 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法 |
US8759838B2 (en) | 2010-08-06 | 2014-06-24 | Kabushiki Kaisha Toshiba | Package and fabrication method of the same |
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GB2432830A (en) | 2005-12-02 | 2007-06-06 | Morganite Elect Carbon | Formation of thermally anisotropic carbon material |
WO2008013279A1 (fr) * | 2006-07-28 | 2008-01-31 | Kyocera Corporation | Boîtier de stockage de composant électronique et dispositif électronique |
JP5105801B2 (ja) | 2006-09-05 | 2012-12-26 | 株式会社東芝 | 半導体装置 |
JP5112101B2 (ja) * | 2007-02-15 | 2013-01-09 | 株式会社東芝 | 半導体パッケージ |
US20100091477A1 (en) * | 2008-10-14 | 2010-04-15 | Kabushiki Kaisha Toshiba | Package, and fabrication method for the package |
JP4643703B2 (ja) * | 2008-11-21 | 2011-03-02 | 株式会社東芝 | 半導体装置の固定具及びその取付構造 |
JP5806464B2 (ja) * | 2010-02-03 | 2015-11-10 | 株式会社東芝 | 半導体素子収納用パッケージ及びそれを用いた半導体装置 |
DE102011007171A1 (de) * | 2011-04-12 | 2012-10-18 | BSH Bosch und Siemens Hausgeräte GmbH | Kühlvorrichtung für ein Elektronikmodul eines Haushaltsgeräts sowie Baugruppe und Haushaltsgerät mit einer Kühlvorrichtung |
WO2015055899A1 (fr) * | 2013-10-18 | 2015-04-23 | Griset | Support pour composants électroniques de puissance, module de puissance doté d'un tel support, et procédé de fabrication correspondant |
CN104754913B (zh) * | 2013-12-27 | 2018-06-05 | 华为技术有限公司 | 导热复合材料片及其制作方法 |
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US9791704B2 (en) * | 2015-01-20 | 2017-10-17 | Microsoft Technology Licensing, Llc | Bonded multi-layer graphite heat pipe |
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EP3726572A1 (en) * | 2019-04-16 | 2020-10-21 | ABB Schweiz AG | Heatsink assembly, method of manufacturing a heatsink assembly, and an electrical device |
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-
2008
- 2008-06-30 US US12/164,396 patent/US7745928B2/en not_active Expired - Fee Related
- 2008-07-01 TW TW097124724A patent/TWI438877B/zh not_active IP Right Cessation
- 2008-07-04 KR KR1020080064762A patent/KR101015294B1/ko not_active IP Right Cessation
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US8759838B2 (en) | 2010-08-06 | 2014-06-24 | Kabushiki Kaisha Toshiba | Package and fabrication method of the same |
Also Published As
Publication number | Publication date |
---|---|
US20090008770A1 (en) | 2009-01-08 |
KR101015294B1 (ko) | 2011-02-15 |
EP2012355A3 (en) | 2009-09-30 |
US7745928B2 (en) | 2010-06-29 |
TWI438877B (zh) | 2014-05-21 |
JP4558012B2 (ja) | 2010-10-06 |
KR20090004738A (ko) | 2009-01-12 |
EP2012355A2 (en) | 2009-01-07 |
TW200917435A (en) | 2009-04-16 |
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