JP2009010281A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2009010281A
JP2009010281A JP2007172235A JP2007172235A JP2009010281A JP 2009010281 A JP2009010281 A JP 2009010281A JP 2007172235 A JP2007172235 A JP 2007172235A JP 2007172235 A JP2007172235 A JP 2007172235A JP 2009010281 A JP2009010281 A JP 2009010281A
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Japan
Prior art keywords
film
region
electrode
gate electrode
semiconductor substrate
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JP2007172235A
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Japanese (ja)
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JP2009010281A5 (enExample
Inventor
Yoshiyuki Kawashima
祥之 川嶋
Yasuyuki Ishii
泰之 石井
Koichi Toba
功一 鳥羽
Koji Hashimoto
孝司 橋本
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2007172235A priority Critical patent/JP2009010281A/ja
Publication of JP2009010281A publication Critical patent/JP2009010281A/ja
Publication of JP2009010281A5 publication Critical patent/JP2009010281A5/ja
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  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2007172235A 2007-06-29 2007-06-29 半導体装置およびその製造方法 Pending JP2009010281A (ja)

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JP2007172235A JP2009010281A (ja) 2007-06-29 2007-06-29 半導体装置およびその製造方法

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JP2007172235A JP2009010281A (ja) 2007-06-29 2007-06-29 半導体装置およびその製造方法

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JP2009010281A true JP2009010281A (ja) 2009-01-15
JP2009010281A5 JP2009010281A5 (enExample) 2010-07-01

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278184A (ja) * 2009-05-28 2010-12-09 Fujitsu Semiconductor Ltd 半導体装置の製造方法
CN103219288A (zh) * 2013-03-22 2013-07-24 上海宏力半导体制造有限公司 半导体器件及其形成方法
JP2016051745A (ja) * 2014-08-29 2016-04-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20180121388A (ko) 2017-04-28 2018-11-07 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
CN119730245A (zh) * 2025-02-28 2025-03-28 晶芯成(北京)科技有限公司 一种半导体器件及其制备方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580886A (en) * 1978-12-14 1980-06-18 Toshiba Corp Semiconductor memory element and memory circuit
JPH11312744A (ja) * 1998-04-24 1999-11-09 Ieiru Maa Iyu 金属ゲート不揮発性メモリセル
JP2001036014A (ja) * 1999-07-23 2001-02-09 Fujitsu Ltd 半導体装置
JP2002141469A (ja) * 2000-10-31 2002-05-17 Toshiba Corp 半導体装置とその製造方法
JP2002151428A (ja) * 2000-11-13 2002-05-24 Toshiba Corp 熱処理方法及び半導体装置の製造方法
JP2002280458A (ja) * 2001-01-17 2002-09-27 Internatl Business Mach Corp <Ibm> 陽極酸化プロセスを使用してのｍｉｍ（金属・絶縁物・金属）構造の製造方法
JP2004247633A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置
JP2005203475A (ja) * 2004-01-14 2005-07-28 Renesas Technology Corp 半導体装置およびその製造方法
JP2005228786A (ja) * 2004-02-10 2005-08-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2006120662A (ja) * 2004-10-19 2006-05-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2006302985A (ja) * 2005-04-18 2006-11-02 Renesas Technology Corp 不揮発性半導体装置の製造方法
WO2007011582A2 (en) * 2005-07-14 2007-01-25 Micron Technology, Inc. High density nand non-volatile memory device
JP2007150234A (ja) * 2005-10-26 2007-06-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580886A (en) * 1978-12-14 1980-06-18 Toshiba Corp Semiconductor memory element and memory circuit
JPH11312744A (ja) * 1998-04-24 1999-11-09 Ieiru Maa Iyu 金属ゲート不揮発性メモリセル
JP2001036014A (ja) * 1999-07-23 2001-02-09 Fujitsu Ltd 半導体装置
JP2002141469A (ja) * 2000-10-31 2002-05-17 Toshiba Corp 半導体装置とその製造方法
JP2002151428A (ja) * 2000-11-13 2002-05-24 Toshiba Corp 熱処理方法及び半導体装置の製造方法
JP2002280458A (ja) * 2001-01-17 2002-09-27 Internatl Business Mach Corp <Ibm> 陽極酸化プロセスを使用してのｍｉｍ（金属・絶縁物・金属）構造の製造方法
JP2004247633A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置
JP2005203475A (ja) * 2004-01-14 2005-07-28 Renesas Technology Corp 半導体装置およびその製造方法
JP2005228786A (ja) * 2004-02-10 2005-08-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2006120662A (ja) * 2004-10-19 2006-05-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2006302985A (ja) * 2005-04-18 2006-11-02 Renesas Technology Corp 不揮発性半導体装置の製造方法
WO2007011582A2 (en) * 2005-07-14 2007-01-25 Micron Technology, Inc. High density nand non-volatile memory device
JP2007150234A (ja) * 2005-10-26 2007-06-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278184A (ja) * 2009-05-28 2010-12-09 Fujitsu Semiconductor Ltd 半導体装置の製造方法
CN103219288A (zh) * 2013-03-22 2013-07-24 上海宏力半导体制造有限公司 半导体器件及其形成方法
JP2016051745A (ja) * 2014-08-29 2016-04-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR20180121388A (ko) 2017-04-28 2018-11-07 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
CN108807390A (zh) * 2017-04-28 2018-11-13 瑞萨电子株式会社 半导体器件及其制造方法
EP3442031A2 (en) 2017-04-28 2019-02-13 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US10490496B2 (en) 2017-04-28 2019-11-26 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US10978385B2 (en) 2017-04-28 2021-04-13 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
CN108807390B (zh) * 2017-04-28 2023-08-08 瑞萨电子株式会社 半导体器件及其制造方法
CN119730245A (zh) * 2025-02-28 2025-03-28 晶芯成(北京)科技有限公司 一种半导体器件及其制备方法

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