JP2008543074A - 有機エレクトロルミネッセント光源 - Google Patents
有機エレクトロルミネッセント光源 Download PDFInfo
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- JP2008543074A JP2008543074A JP2008514276A JP2008514276A JP2008543074A JP 2008543074 A JP2008543074 A JP 2008543074A JP 2008514276 A JP2008514276 A JP 2008514276A JP 2008514276 A JP2008514276 A JP 2008514276A JP 2008543074 A JP2008543074 A JP 2008543074A
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- 229910052751 metal Inorganic materials 0.000 claims description 4
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- 239000010931 gold Substances 0.000 description 3
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- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- FKASFBLJDCHBNZ-UHFFFAOYSA-N 1,3,4-oxadiazole Chemical compound C1=NN=CO1 FKASFBLJDCHBNZ-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 1
- FJXNABNMUQXOHX-UHFFFAOYSA-N 4-(9h-carbazol-1-yl)-n,n-bis[4-(9h-carbazol-1-yl)phenyl]aniline Chemical compound C12=CC=CC=C2NC2=C1C=CC=C2C(C=C1)=CC=C1N(C=1C=CC(=CC=1)C=1C=2NC3=CC=CC=C3C=2C=CC=1)C(C=C1)=CC=C1C1=C2NC3=CC=CC=C3C2=CC=C1 FJXNABNMUQXOHX-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/16—Electron transporting layers
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- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/875—Arrangements for extracting light from the devices
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- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 透明基板と、透明電極と、反射性電極と、光を発する少なくとも1つの有機エレクトロルミネッセント層であって、250nmよりも大きく、好ましくは400nmよりも大きく、特に好ましくは500nmよりも大きい厚さを有すると共に前記電極間に配されている少なくとも1つの有機エレクトロルミネッセント層とを有するエレクトロルミネッセント光源。
- 前記有機エレクトロルミネッセント層が、少なくとも1つの正孔伝導層及び1つの電子伝導層を有しており、前記電子伝導層の厚さは、200nmよりも大きく、好ましくは250nmよりも大きく、特に好ましくは300nmよりも大きいことを特徴とする、請求項1に記載のエレクトロルミネッセント光源。
- 前記正孔伝導層の厚さが、90nmよりも大きく、好ましくは150nmよりも大きく、特に好ましくは200nmよりも大きいことを特徴とする、請求項2に記載のエレクトロルミネッセント光源。
- 前記電子伝導層及び前記正孔伝導層が、|nE−nL|≦0.1の差である屈折率nE及びnLを有していることを特徴とする、請求項2又は3に記載のエレクトロルミネッセント光源。
- 導電性を増加させるために、前記電子伝導層が、好ましくは金属であるn型ドーパントを含んでおり、及び/又は前記正孔伝導層が好ましくは有機材料であるp型ドーパントを含んでいることを特徴とする、請求項2乃至4の何れか一項に記載のエレクトロルミネッセント光源。
- 前記有機エレクトロルミネッセント層が、1,000nmよりも小さく、好ましくは800nmよりも小さく、特に好ましくは600nmよりも小さい層の厚さを有することを特徴とする、請求項1乃至5の何れか一項に記載のエレクトロルミネッセント光源。
- 前記透明基板が、1.6よりも高く、好ましくは1.8よりも高い屈折率を有することを特徴とする、請求項1乃至6の何れか一項に記載のエレクトロルミネッセント光源。
- 前記透明基板、前記透明電極及び前記有機エレクトロルミネッセント層の屈折率が、0.1よりも小さいだけ異なっており、好ましくは同一であることを特徴とする、請求項1乃至7の何れか一項に記載のエレクトロルミネッセント光源。
- 前記反射性電極が90%よりも大きい反射率を有することを特徴とする、前記1乃至8の何れか一項に記載のエレクトロルミネッセント光源。
- 前記基板が、大気との界面に光抽出構造を有していることを特徴とする、請求項1乃至9の何れか一項に記載のエレクトロルミネッセント光源。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05104861 | 2005-06-03 | ||
PCT/IB2006/051705 WO2006129265A2 (en) | 2005-06-03 | 2006-05-30 | Organic electroluminescent light source |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008543074A true JP2008543074A (ja) | 2008-11-27 |
Family
ID=37396026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514276A Pending JP2008543074A (ja) | 2005-06-03 | 2006-05-30 | 有機エレクトロルミネッセント光源 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080218063A1 (ja) |
EP (1) | EP1891691B1 (ja) |
JP (1) | JP2008543074A (ja) |
KR (1) | KR101431254B1 (ja) |
CN (1) | CN100565968C (ja) |
TW (1) | TWI491309B (ja) |
WO (1) | WO2006129265A2 (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010054562A (ja) * | 2008-08-26 | 2010-03-11 | Toppan Printing Co Ltd | カラーフィルタ基板及び液晶表示装置 |
JP2010146955A (ja) * | 2008-12-22 | 2010-07-01 | Panasonic Electric Works Co Ltd | 有機el発光装置 |
JP2010157424A (ja) * | 2008-12-26 | 2010-07-15 | Panasonic Electric Works Co Ltd | 有機el発光装置 |
JP2010157421A (ja) * | 2008-12-26 | 2010-07-15 | Panasonic Electric Works Co Ltd | 有機el発光装置 |
WO2010090207A1 (ja) * | 2009-02-09 | 2010-08-12 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、それを用いた照明装置 |
JP2011029120A (ja) * | 2009-07-29 | 2011-02-10 | Sumitomo Chemical Co Ltd | 発光装置 |
JP2012142182A (ja) * | 2010-12-28 | 2012-07-26 | Fujifilm Corp | 有機電界発光装置 |
US8471463B2 (en) | 2011-08-12 | 2013-06-25 | Canon Kabushiki Kaisha | Organic EL element, and light-emitting apparatus, image-forming apparatus, display apparatus and imaging apparatus using the organic EL element |
WO2013190656A1 (ja) * | 2012-06-20 | 2013-12-27 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
US8779656B2 (en) | 2011-08-12 | 2014-07-15 | Canon Kabushiki Kaisha | Organic electroluminescence element, and light emitting apparatus, image forming apparatus, light emitting element array, display apparatus, and imaging apparatus each using the element |
JP2015502037A (ja) * | 2011-11-14 | 2015-01-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 有機発光素子 |
JP2015502006A (ja) * | 2011-11-14 | 2015-01-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 有機発光素子 |
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Also Published As
Publication number | Publication date |
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TWI491309B (zh) | 2015-07-01 |
WO2006129265A3 (en) | 2007-03-01 |
CN101189745A (zh) | 2008-05-28 |
EP1891691B1 (en) | 2012-08-01 |
TW200706063A (en) | 2007-02-01 |
WO2006129265A2 (en) | 2006-12-07 |
CN100565968C (zh) | 2009-12-02 |
US20080218063A1 (en) | 2008-09-11 |
EP1891691A2 (en) | 2008-02-27 |
KR20080022574A (ko) | 2008-03-11 |
KR101431254B1 (ko) | 2014-08-21 |
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