JP2008542755A - 試料からの反射エネルギーの薄膜干渉による変動の低減 - Google Patents
試料からの反射エネルギーの薄膜干渉による変動の低減 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 58
- 230000007547 defect Effects 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000007689 inspection Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000000523 sample Substances 0.000 claims 11
- 239000013074 reference sample Substances 0.000 claims 2
- 239000002985 plastic film Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 230000000694 effects Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 210000001747 pupil Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
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- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8809—Adjustment for highlighting flaws
Abstract
Description
Claims (23)
- 試料の検査において、薄膜干渉による全反射エネルギーの変動を低減させるための方法であって、
直線、円、ランダム偏光からなるグループのうちの少なくともひとつに基づいてp偏光を生成するステップと、
前記試料を、一番上の膜についてブリュースター角と同様の入射角で照明するステップとを含み、前記照明は前記生成によるp偏光を使用し、
前記p偏光は前記試料に関してp偏光されていることを特徴とする方法。 - 請求項1に記載の方法であって、
前記照明は四極照明であることを特徴とする方法。 - 請求項1に記載の方法であって、
前記照明するステップの照明は、ブリュースター角より大きい角度と小さい角度の両方を含む入射角範囲を有するリングであることを特徴とする方法。 - 請求項3に記載の方法であって、
ブリュースター角より小さな入射角での全反射エネルギーの変動がブリュースター角より大きな角度での全反射エネルギーの角とバランスをとるために使用されることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光は波長板のモザイクを使って得られることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光はレーザから直接得られることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光はアキシコンを使って得られることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光は複屈折を使って得られることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光は回折素子を使って得られることを特徴とする方法。 - 請求項1に記載の方法であって、
p偏光はプラスチックシート偏光板を使って得られることを特徴とする方法。 - 試料の検査において、薄膜干渉による全反射エネルギーの変動を低減させる方法であって、
複数の入射角で提供されるリング照明を使って前記試料を照明するステップを含み、前記複数の入射角は、第一の入射角範囲での全反射エネルギーの変動を利用して第二の入射角範囲での全反射エネルギーの変動とのバランスをとることを特徴とする方法。 - 請求項11に記載の方法であって、
各入射角は方位角リング照明を利用することを特徴とする方法。 - 請求項12に記載の方法であって、
各入射角は入射角範囲を含むことを特徴とする方法。 - 請求項13に記載の方法であって、
ひとつの入射角範囲はp偏光で、他の入射角範囲はs偏光であることを特徴とする方法。 - 請求項13に記載の方法であって、
入射角範囲は両方ともs偏光であることを特徴とする方法。 - 請求項13に記載の方法であって、
入射角範囲は両方ともp偏光であることを特徴とする方法。 - 請求項14に記載の方法であって、
s偏光は第一のレーザパルスから発生され、p偏光は第二のレーザパルスから発生されることを特徴とする方法。 - 請求項11に記載の方法であって、
前記照明するステップは、直線、円またはランダム偏光からなるグループのうちの少なくともひとつをp偏光とs偏光からなるグループのうちのひとつに変換されたものを含む光エネルギーを利用することを特徴とする方法。 - 試料の検査のために、薄膜干渉による全反射エネルギーの変動を低減させる方法であって、
第一の入射角範囲での全反射エネルギーの変動を使って、第二の入射角範囲での全反射エネルギーの変動のバランスをとるように2つの入射角範囲を選択するステップと、
前記試料を前記2つの入射角範囲で照明するステップと、
前記試料の基準試料とのダイ間比較を使って前記試料上の欠陥を検出するステップとを含み、前記試料と基準試料はどちらも前記2つの入射角範囲で照明されることを特徴とする方法。 - 請求項19に記載の方法であって、
前記試料は半導体ウェハを含むことを特徴とする方法。 - 請求項19に記載の方法であって、
前記薄膜はポリシリコン、シリコン、酸化物、低誘電体層間絶縁膜、高誘電体層間絶縁膜、フォトレジスト、スピンオンガラス、窒化物からなるグループのうちのひとつを含むことを特徴とする方法。 - 請求項19に記載の方法であって、
前記薄膜の下の層は主に金属であることを特徴とする方法。 - 請求項19に記載の方法であって、
前記薄膜の下の層はシリコンであることを特徴とする方法。
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US68623705P | 2005-05-31 | 2005-05-31 | |
US60/686,237 | 2005-05-31 | ||
US11/223,851 US7609373B2 (en) | 2005-05-31 | 2005-09-09 | Reducing variations in energy reflected from a sample due to thin film interference |
US11/223,851 | 2005-09-09 | ||
PCT/US2006/020288 WO2006130432A2 (en) | 2005-05-31 | 2006-05-26 | Reducing variations in energy reflected from a sample due to thin film interference |
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JP4980347B2 JP4980347B2 (ja) | 2012-07-18 |
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US (1) | US7609373B2 (ja) |
EP (1) | EP1886117B1 (ja) |
JP (1) | JP4980347B2 (ja) |
WO (1) | WO2006130432A2 (ja) |
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JP5895305B2 (ja) * | 2011-12-06 | 2016-03-30 | シーシーエス株式会社 | 検査用照明装置及び検査用照明方法 |
US10203399B2 (en) * | 2013-11-12 | 2019-02-12 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
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WO2006130432A2 (en) | 2006-12-07 |
EP1886117B1 (en) | 2019-09-18 |
WO2006130432A3 (en) | 2007-02-15 |
EP1886117A2 (en) | 2008-02-13 |
EP1886117A4 (en) | 2012-12-19 |
US7609373B2 (en) | 2009-10-27 |
JP4980347B2 (ja) | 2012-07-18 |
US20060268265A1 (en) | 2006-11-30 |
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