JP2008541472A5 - - Google Patents

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Publication number
JP2008541472A5
JP2008541472A5 JP2008511830A JP2008511830A JP2008541472A5 JP 2008541472 A5 JP2008541472 A5 JP 2008541472A5 JP 2008511830 A JP2008511830 A JP 2008511830A JP 2008511830 A JP2008511830 A JP 2008511830A JP 2008541472 A5 JP2008541472 A5 JP 2008541472A5
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JP
Japan
Prior art keywords
gas discharge
electrode
gap
source according
conductive material
Prior art date
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Application number
JP2008511830A
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English (en)
Japanese (ja)
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JP2008541472A (ja
JP4879974B2 (ja
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Priority claimed from DE102005023060A external-priority patent/DE102005023060B4/de
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Publication of JP2008541472A publication Critical patent/JP2008541472A/ja
Publication of JP2008541472A5 publication Critical patent/JP2008541472A5/ja
Application granted granted Critical
Publication of JP4879974B2 publication Critical patent/JP4879974B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2008511830A 2005-05-19 2006-05-08 特にｅｕｖ放射のための、ガス放電源 Expired - Fee Related JP4879974B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005023060.1 2005-05-19
DE102005023060A DE102005023060B4 (de) 2005-05-19 2005-05-19 Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung
PCT/IB2006/051428 WO2006123270A2 (en) 2005-05-19 2006-05-08 Gas discharge source, in particular for euv radiation

Publications (3)

Publication Number Publication Date
JP2008541472A JP2008541472A (ja) 2008-11-20
JP2008541472A5 true JP2008541472A5 (https=) 2009-06-25
JP4879974B2 JP4879974B2 (ja) 2012-02-22

Family

ID=36933632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008511830A Expired - Fee Related JP4879974B2 (ja) 2005-05-19 2006-05-08 特にｅｕｖ放射のための、ガス放電源

Country Status (8)

Country Link
US (1) US7630475B2 (https=)
EP (1) EP1886542B1 (https=)
JP (1) JP4879974B2 (https=)
KR (1) KR101214136B1 (https=)
CN (1) CN101180923B (https=)
AT (1) ATE464776T1 (https=)
DE (2) DE102005023060B4 (https=)
WO (1) WO2006123270A2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US7759663B1 (en) * 2006-12-06 2010-07-20 Asml Netherlands B.V. Self-shading electrodes for debris suppression in an EUV source
US7696493B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
DE102007004440B4 (de) * 2007-01-25 2011-05-12 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung mittels einer elektrisch betriebenen Gasentladung
JP5149514B2 (ja) * 2007-02-20 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
US7629593B2 (en) * 2007-06-28 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, radiation system, device manufacturing method, and radiation generating method
ATE551882T1 (de) * 2007-09-07 2012-04-15 Koninkl Philips Electronics Nv Drehradelektrodenvorrichtung für gasentladungsquellen mit radabdeckung für hochleistungsbetrieb
EP2198675B1 (en) 2007-09-07 2013-03-13 Philips Intellectual Property & Standards GmbH Electrode device for gas discharge sources and method of operating a gas discharge source having this electrode device
EP2198676A1 (en) * 2007-10-01 2010-06-23 Philips Intellectual Property & Standards GmbH High voltage electrical connection line
JP4952513B2 (ja) * 2007-10-31 2012-06-13 ウシオ電機株式会社 極端紫外光光源装置
WO2009077943A1 (en) * 2007-12-14 2009-06-25 Philips Intellectual Property & Standards Gmbh Method for laser-based plasma production and radiation source, in particular for euv radiation
DE102007060807B4 (de) 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
CN102099746B (zh) * 2008-07-18 2013-05-08 皇家飞利浦电子股份有限公司 包含污染捕获器的极端紫外辐射生成设备
EP2170021B1 (en) * 2008-09-25 2015-11-04 ASML Netherlands B.V. Source module, radiation source and lithographic apparatus
JP4623192B2 (ja) * 2008-09-29 2011-02-02 ウシオ電機株式会社 極端紫外光光源装置および極端紫外光発生方法
JP5245857B2 (ja) * 2009-01-21 2013-07-24 ウシオ電機株式会社 極端紫外光光源装置
JP5504673B2 (ja) * 2009-03-30 2014-05-28 ウシオ電機株式会社 極端紫外光光源装置
WO2011051839A1 (en) * 2009-10-29 2011-05-05 Koninklijke Philips Electronics N.V. Electrode system, in particular for gas discharge light sources
EP2555598A1 (en) * 2011-08-05 2013-02-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for generating optical radiation by means of electrically operated pulsed discharges
NL2009683A (en) * 2011-11-15 2013-05-16 Asml Netherlands Bv Radiation source device, lithographic apparatus, and device manufacturing method.
DE102012109809B3 (de) * 2012-10-15 2013-12-12 Xtreme Technologies Gmbh Vorrichtung zur Erzeugung von kurzwelliger elektromagnetischer Strahlung auf Basis eines Gasentladungsplasmas
DE102013103668B4 (de) * 2013-04-11 2016-02-25 Ushio Denki Kabushiki Kaisha Anordnung zum Handhaben eines flüssigen Metalls zur Kühlung von umlaufenden Komponenten einer Strahlungsquelle auf Basis eines strahlungsemittierenden Plasmas
DE102013109048A1 (de) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Kühlung von Strahlungsquellen auf Basis eines Plasmas
DE102013017655B4 (de) 2013-10-18 2017-01-05 Ushio Denki Kabushiki Kaisha Anordnung und Verfahren zum Kühlen einer plasmabasierten Strahlungsquelle
DE102014102720B4 (de) * 2014-02-28 2017-03-23 Ushio Denki Kabushiki Kaisha Anordnung zum Kühlen einer plasmabasierten Strahlungsquelle mit einer metallischen Kühlflüssigkeit und Verfahren zur Inbetriebnahme einer solchen Kühlanordnung
US10021773B2 (en) 2015-11-16 2018-07-10 Kla-Tencor Corporation Laser produced plasma light source having a target material coated on a cylindrically-symmetric element
CN111263577B (zh) * 2018-12-03 2024-10-01 北京梦之墨科技有限公司 一种具有电磁屏蔽性能的旋转结构
US11596048B2 (en) * 2019-09-23 2023-02-28 Kla Corporation Rotating lamp for laser-sustained plasma illumination source
JP7626009B2 (ja) * 2021-08-30 2025-02-04 ウシオ電機株式会社 放電プラズマ生成ユニット、及びそれを搭載した光源装置
CN113960019A (zh) * 2021-10-26 2022-01-21 天津大学 一种双转盘电极原子发射光谱油液元素装置
KR20250109087A (ko) 2024-01-09 2025-07-16 한국표준과학연구원 레이저 생성 플라즈마를 사용하는 극자외선 발생 장치 및 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000061839A (ja) * 1998-08-19 2000-02-29 Rikagaku Kenkyusho マイクロ放電ツルーイング装置とこれを用いた微細加工方法
TW589924B (en) * 2001-04-06 2004-06-01 Fraunhofer Ges Forschung Process and device for producing extreme ultraviolet ray/weak x-ray
EP1401248B1 (en) * 2002-09-19 2012-07-25 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
CN101795527B (zh) 2002-09-19 2013-02-20 Asml荷兰有限公司 辐射源、光刻装置和器件制造方法
WO2004062050A2 (en) 2003-01-02 2004-07-22 Jmar Research Inc. Method and apparatus for generating a membrane target for laser produced plasma
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
RU2278483C2 (ru) * 2004-04-14 2006-06-20 Владимир Михайлович Борисов Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы
US7501642B2 (en) * 2005-12-29 2009-03-10 Asml Netherlands B.V. Radiation source

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