JP2008536296A - プラズマ酸化および酸化材料の除去 - Google Patents

プラズマ酸化および酸化材料の除去 Download PDF

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Publication number
JP2008536296A
JP2008536296A JP2008500764A JP2008500764A JP2008536296A JP 2008536296 A JP2008536296 A JP 2008536296A JP 2008500764 A JP2008500764 A JP 2008500764A JP 2008500764 A JP2008500764 A JP 2008500764A JP 2008536296 A JP2008536296 A JP 2008536296A
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JP
Japan
Prior art keywords
conductive layer
etching
layer
copper
converting
Prior art date
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Pending
Application number
JP2008500764A
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English (en)
Japanese (ja)
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JP2008536296A5 (https=
Inventor
キム・ユンサン
ベイリー・アンドリュー・ザサード
ユーン・ヒュングスック・アレキサンダー
ホーバルト・アーサー・エム．
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Lam Research Corp
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Lam Research Corp
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2008536296A publication Critical patent/JP2008536296A/ja
Publication of JP2008536296A5 publication Critical patent/JP2008536296A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2008500764A 2005-03-09 2006-02-27 プラズマ酸化および酸化材料の除去 Pending JP2008536296A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/076,725 US7540935B2 (en) 2003-03-14 2005-03-09 Plasma oxidation and removal of oxidized material
PCT/US2006/007401 WO2006098888A2 (en) 2005-03-09 2006-02-27 Plasma oxidation and removal of oxidized material

Publications (2)

Publication Number Publication Date
JP2008536296A true JP2008536296A (ja) 2008-09-04
JP2008536296A5 JP2008536296A5 (https=) 2009-04-16

Family

ID=36992195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008500764A Pending JP2008536296A (ja) 2005-03-09 2006-02-27 プラズマ酸化および酸化材料の除去

Country Status (6)

Country Link
US (1) US7540935B2 (https=)
JP (1) JP2008536296A (https=)
KR (2) KR101376830B1 (https=)
CN (1) CN101164121B (https=)
TW (1) TWI310587B (https=)
WO (1) WO2006098888A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011504299A (ja) * 2007-11-21 2011-02-03 ラム リサーチ コーポレーション 湿式エッジ洗浄を強化するためのベベルプラズマ処理
WO2025004295A1 (ja) * 2023-06-29 2025-01-02 株式会社Kokusai Electric 処理方法、処理装置、半導体装置の製造方法及びプログラム

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KR100729933B1 (ko) * 2005-12-19 2007-06-18 동부일렉트로닉스 주식회사 구리 시드층의 증착 온도 측정 방법 및 이를 이용한 구리층형성 방법
CA2663325A1 (en) * 2006-10-16 2008-04-24 Materials And Technologies Corporation Wet processing using a fluid meniscus, apparatus and method
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
CN105225976A (zh) * 2014-06-25 2016-01-06 中芯国际集成电路制造(上海)有限公司 焊盘的制作方法及半导体器件
KR20220132603A (ko) * 2015-06-17 2022-09-30 인텔 코포레이션 디바이스 제조를 위한 산화물 층들의 원자 층 제거에 의한 전이 금속 건식 에칭
CN112382608A (zh) * 2020-11-04 2021-02-19 上海华力集成电路制造有限公司 铜互连线的制造方法
US11557487B2 (en) * 2021-06-04 2023-01-17 Tokyo Electron Limited Etching metal during processing of a semiconductor structure

Citations (2)

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JP2004193488A (ja) * 2002-12-13 2004-07-08 Tosoh Corp バリア金属用研磨液及び研磨方法
WO2004084267A2 (en) * 2003-03-14 2004-09-30 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization

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US4919750A (en) * 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
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US6171661B1 (en) * 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4307592B2 (ja) * 1998-07-07 2009-08-05 Ｏｋｉセミコンダクタ株式会社 半導体素子における配線形成方法
JP3892621B2 (ja) * 1999-04-19 2007-03-14 株式会社神戸製鋼所 配線膜の形成方法
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JP2004193488A (ja) * 2002-12-13 2004-07-08 Tosoh Corp バリア金属用研磨液及び研磨方法
WO2004084267A2 (en) * 2003-03-14 2004-09-30 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011504299A (ja) * 2007-11-21 2011-02-03 ラム リサーチ コーポレーション 湿式エッジ洗浄を強化するためのベベルプラズマ処理
WO2025004295A1 (ja) * 2023-06-29 2025-01-02 株式会社Kokusai Electric 処理方法、処理装置、半導体装置の製造方法及びプログラム

Also Published As

Publication number Publication date
CN101164121B (zh) 2011-01-26
KR20130036066A (ko) 2013-04-09
TWI310587B (en) 2009-06-01
WO2006098888A3 (en) 2007-12-21
US20060128152A1 (en) 2006-06-15
US7540935B2 (en) 2009-06-02
WO2006098888A2 (en) 2006-09-21
KR20070112234A (ko) 2007-11-22
CN101164121A (zh) 2008-04-16
TW200644113A (en) 2006-12-16
KR101376830B1 (ko) 2014-03-20

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