JP2008527736A - 多層又は多重パターン位置合せのためのインプリント参照テンプレート及びその方法 - Google Patents

多層又は多重パターン位置合せのためのインプリント参照テンプレート及びその方法 Download PDF

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Publication number
JP2008527736A
JP2008527736A JP2007551243A JP2007551243A JP2008527736A JP 2008527736 A JP2008527736 A JP 2008527736A JP 2007551243 A JP2007551243 A JP 2007551243A JP 2007551243 A JP2007551243 A JP 2007551243A JP 2008527736 A JP2008527736 A JP 2008527736A
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JP
Japan
Prior art keywords
reference template
mask
sub
pattern
alignment
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Pending
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JP2007551243A
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English (en)
Japanese (ja)
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JP2008527736A5 (enExample
Inventor
コルバーン、マシュー、イー
マーティン、イブ、シー
レットナー、チャールズ、ティー
ヴァン、ケッセル、セオドア、ジー
ウィックラマシンジ、ヘマサ、ケー
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International Business Machines Corp
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International Business Machines Corp
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Publication of JP2008527736A publication Critical patent/JP2008527736A/ja
Publication of JP2008527736A5 publication Critical patent/JP2008527736A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/04—Additives and treatments of the filtering material
    • B01D2239/045—Deodorising additives

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
JP2007551243A 2005-01-18 2005-10-18 多層又は多重パターン位置合せのためのインプリント参照テンプレート及びその方法 Pending JP2008527736A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/037,890 US20060157898A1 (en) 2005-01-18 2005-01-18 Imprint reference template for multilayer or multipattern registration and method therefor
PCT/US2005/037278 WO2006078333A1 (en) 2005-01-18 2005-10-18 Imprint reference template for multilayer or multipattern registration and method therefor

Publications (2)

Publication Number Publication Date
JP2008527736A true JP2008527736A (ja) 2008-07-24
JP2008527736A5 JP2008527736A5 (enExample) 2008-09-04

Family

ID=35539396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007551243A Pending JP2008527736A (ja) 2005-01-18 2005-10-18 多層又は多重パターン位置合せのためのインプリント参照テンプレート及びその方法

Country Status (7)

Country Link
US (2) US20060157898A1 (enExample)
EP (1) EP1839088B1 (enExample)
JP (1) JP2008527736A (enExample)
CN (1) CN101088045B (enExample)
AT (1) ATE399336T1 (enExample)
DE (1) DE602005007776D1 (enExample)
WO (1) WO2006078333A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535223A (ja) * 2005-03-23 2008-08-28 アギア システムズ インコーポレーテッド インプリント・リソグラフィおよび直接描画技術を用いるデバイス製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US20070121477A1 (en) * 2006-06-15 2007-05-31 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
US20080074984A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Architecture for a Memory Device
US7977655B2 (en) * 2009-05-21 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of monitoring E-beam overlay and providing advanced process control
JP5326806B2 (ja) * 2009-05-21 2013-10-30 住友電気工業株式会社 半導体光素子を作製する方法
CN102456540B (zh) * 2010-10-19 2014-05-21 上海华虹宏力半导体制造有限公司 应用于外延工艺中的光刻套刻标记的制备方法
JP2012089636A (ja) * 2010-10-19 2012-05-10 Toshiba Corp ナノインプリント法
CN102848709B (zh) * 2012-09-29 2015-05-13 信利光电股份有限公司 一种半自动丝网印刷对位方法
US9377683B2 (en) 2013-03-22 2016-06-28 HGST Netherlands B.V. Imprint template with optically-detectable alignment marks and method for making using block copolymers
US8900885B1 (en) 2013-05-28 2014-12-02 International Business Machines Corporation Wafer bonding misalignment reduction
US11075126B2 (en) * 2019-02-15 2021-07-27 Kla-Tencor Corporation Misregistration measurements using combined optical and electron beam technology
US11488949B1 (en) * 2021-06-07 2022-11-01 United Microelectronics Corp. Method of generating dummy patterns for device-under-test and calibration kits
WO2023172766A2 (en) * 2022-03-11 2023-09-14 Board Of Regents, The University Of Texas System Nanoshape patterning techniques that allow high-throughput fabrication of functional nanostructures with complex geometries on planar and non-planar substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JP2002252157A (ja) * 2001-02-22 2002-09-06 Sony Corp マスク作製用部材およびその製造方法ならびにマスクおよびその製造方法ならびに露光方法ならびに半導体装置の製造方法
JP2004505439A (ja) * 2000-07-16 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための高分解能オーバレイ・アライメント方法およびシステム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0138297B1 (ko) * 1994-02-07 1998-06-01 김광호 포토 마스크 및 그 제조 방법
US6300018B1 (en) * 1999-09-21 2001-10-09 Tyco Electronics Logistics Ag Photolithography mask having a subresolution alignment mark window
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
EP1576662B1 (en) * 2002-12-19 2011-10-26 Nxp B.V. Stress-free composite substrate and method of manufacturing such a composite substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JP2004505439A (ja) * 2000-07-16 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための高分解能オーバレイ・アライメント方法およびシステム
JP2002252157A (ja) * 2001-02-22 2002-09-06 Sony Corp マスク作製用部材およびその製造方法ならびにマスクおよびその製造方法ならびに露光方法ならびに半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535223A (ja) * 2005-03-23 2008-08-28 アギア システムズ インコーポレーテッド インプリント・リソグラフィおよび直接描画技術を用いるデバイス製造方法

Also Published As

Publication number Publication date
CN101088045A (zh) 2007-12-12
WO2006078333A1 (en) 2006-07-27
DE602005007776D1 (de) 2008-08-07
US20060157898A1 (en) 2006-07-20
EP1839088B1 (en) 2008-06-25
US20080180646A1 (en) 2008-07-31
CN101088045B (zh) 2011-04-13
EP1839088A1 (en) 2007-10-03
ATE399336T1 (de) 2008-07-15

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