CN101088045B - 用于多层或多图案套准的压印参考模板及其方法 - Google Patents

用于多层或多图案套准的压印参考模板及其方法 Download PDF

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Publication number
CN101088045B
CN101088045B CN2005800445057A CN200580044505A CN101088045B CN 101088045 B CN101088045 B CN 101088045B CN 2005800445057 A CN2005800445057 A CN 2005800445057A CN 200580044505 A CN200580044505 A CN 200580044505A CN 101088045 B CN101088045 B CN 101088045B
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CN
China
Prior art keywords
alignment mark
reference template
mask
pattern
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800445057A
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English (en)
Chinese (zh)
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CN101088045A (zh
Inventor
马修·E.·科尔博恩
伊夫·C.·马丁
查尔斯·T.·雷特纳
西奥多·G.·范·克赛尔
荷玛萨·K.·维克拉玛辛赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Publication date
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Publication of CN101088045A publication Critical patent/CN101088045A/zh
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Publication of CN101088045B publication Critical patent/CN101088045B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/04—Additives and treatments of the filtering material
    • B01D2239/045—Deodorising additives

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
CN2005800445057A 2005-01-18 2005-10-18 用于多层或多图案套准的压印参考模板及其方法 Expired - Fee Related CN101088045B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/037,890 US20060157898A1 (en) 2005-01-18 2005-01-18 Imprint reference template for multilayer or multipattern registration and method therefor
US11/037,890 2005-01-18
PCT/US2005/037278 WO2006078333A1 (en) 2005-01-18 2005-10-18 Imprint reference template for multilayer or multipattern registration and method therefor

Publications (2)

Publication Number Publication Date
CN101088045A CN101088045A (zh) 2007-12-12
CN101088045B true CN101088045B (zh) 2011-04-13

Family

ID=35539396

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800445057A Expired - Fee Related CN101088045B (zh) 2005-01-18 2005-10-18 用于多层或多图案套准的压印参考模板及其方法

Country Status (7)

Country Link
US (2) US20060157898A1 (enExample)
EP (1) EP1839088B1 (enExample)
JP (1) JP2008527736A (enExample)
CN (1) CN101088045B (enExample)
AT (1) ATE399336T1 (enExample)
DE (1) DE602005007776D1 (enExample)
WO (1) WO2006078333A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101264754B1 (ko) * 2005-03-23 2013-05-15 에이저 시스템즈 엘엘시 임프린트 리소그래피 및 직접 기록 기술을 사용하는디바이스 제조 방법
US20070121477A1 (en) * 2006-06-15 2007-05-31 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US20080074984A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Architecture for a Memory Device
JP5326806B2 (ja) * 2009-05-21 2013-10-30 住友電気工業株式会社 半導体光素子を作製する方法
US7977655B2 (en) * 2009-05-21 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of monitoring E-beam overlay and providing advanced process control
JP2012089636A (ja) * 2010-10-19 2012-05-10 Toshiba Corp ナノインプリント法
CN102456540B (zh) * 2010-10-19 2014-05-21 上海华虹宏力半导体制造有限公司 应用于外延工艺中的光刻套刻标记的制备方法
CN102848709B (zh) * 2012-09-29 2015-05-13 信利光电股份有限公司 一种半自动丝网印刷对位方法
US9377683B2 (en) 2013-03-22 2016-06-28 HGST Netherlands B.V. Imprint template with optically-detectable alignment marks and method for making using block copolymers
US8900885B1 (en) 2013-05-28 2014-12-02 International Business Machines Corporation Wafer bonding misalignment reduction
KR102748454B1 (ko) * 2019-02-15 2024-12-30 케이엘에이 코포레이션 결합된 광학 및 전자빔 기술을 사용한 편심 측정
US12464788B2 (en) * 2020-03-31 2025-11-04 Peking University Method for depositing nanostructures on substrate and nanostructure arrays
US11488949B1 (en) * 2021-06-07 2022-11-01 United Microelectronics Corp. Method of generating dummy patterns for device-under-test and calibration kits
WO2023172766A2 (en) * 2022-03-11 2023-09-14 Board Of Regents, The University Of Texas System Nanoshape patterning techniques that allow high-throughput fabrication of functional nanostructures with complex geometries on planar and non-planar substrates

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1121189A (zh) * 1994-02-07 1996-04-24 三星电子株式会社 光掩膜及其制造方法
US20020115002A1 (en) * 2000-10-12 2002-08-22 Todd Bailey Template for room temperature, low pressure micro-and nano-imprint lithography
CN1376276A (zh) * 1999-09-21 2002-10-23 泰科电子罗吉斯迪克思股份公司 带有次分解校准标记窗口的照相平版印刷掩膜
US20040096755A1 (en) * 2001-02-22 2004-05-20 Kaoru Koike Mask-making member and its production method, mask and its making method, exposure process, and fabrication method of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
WO2004057663A1 (en) * 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Stress-free composite substrate and method of manufacturing such a composite substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1121189A (zh) * 1994-02-07 1996-04-24 三星电子株式会社 光掩膜及其制造方法
CN1376276A (zh) * 1999-09-21 2002-10-23 泰科电子罗吉斯迪克思股份公司 带有次分解校准标记窗口的照相平版印刷掩膜
US20020115002A1 (en) * 2000-10-12 2002-08-22 Todd Bailey Template for room temperature, low pressure micro-and nano-imprint lithography
US20040096755A1 (en) * 2001-02-22 2004-05-20 Kaoru Koike Mask-making member and its production method, mask and its making method, exposure process, and fabrication method of semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM CORP,.REGISTERABLE MULTILAYER MASKFABRICATION TECHNIQUE.IBM TECHNICAL DISCLOSURE BULLETIN27 1B.1984,27(1B),686-688.
IBM CORP,.REGISTERABLE MULTILAYER MASKFABRICATION TECHNIQUE.IBM TECHNICAL DISCLOSURE BULLETIN27 1B.1984,27(1B),686-688. *
崔铮,陶佳瑞.纳米压印加工技术发展综述.世界科技研究与发展26 1.2004,26(1),第7至第12页.
崔铮,陶佳瑞.纳米压印加工技术发展综述.世界科技研究与发展26 1.2004,26(1),第7至第12页. *

Also Published As

Publication number Publication date
US20060157898A1 (en) 2006-07-20
WO2006078333A1 (en) 2006-07-27
EP1839088B1 (en) 2008-06-25
DE602005007776D1 (de) 2008-08-07
EP1839088A1 (en) 2007-10-03
JP2008527736A (ja) 2008-07-24
CN101088045A (zh) 2007-12-12
ATE399336T1 (de) 2008-07-15
US20080180646A1 (en) 2008-07-31

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