JP2008527634A5 - - Google Patents

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Publication number
JP2008527634A5
JP2008527634A5 JP2007549623A JP2007549623A JP2008527634A5 JP 2008527634 A5 JP2008527634 A5 JP 2008527634A5 JP 2007549623 A JP2007549623 A JP 2007549623A JP 2007549623 A JP2007549623 A JP 2007549623A JP 2008527634 A5 JP2008527634 A5 JP 2008527634A5
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JP
Japan
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region
plasma
conductor
vacuum plasma
plasma processor
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JP2007549623A
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English (en)
Japanese (ja)
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JP5183213B2 (ja
JP2008527634A (ja
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Priority claimed from US11/024,978 external-priority patent/US7632375B2/en
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Publication of JP2008527634A publication Critical patent/JP2008527634A/ja
Publication of JP2008527634A5 publication Critical patent/JP2008527634A5/ja
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Publication of JP5183213B2 publication Critical patent/JP5183213B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007549623A 2004-12-30 2005-12-29 真空プラズマプロセッサ Expired - Fee Related JP5183213B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/024,978 US7632375B2 (en) 2004-12-30 2004-12-30 Electrically enhancing the confinement of plasma
US11/024,978 2004-12-30
PCT/US2005/047385 WO2006074050A2 (en) 2004-12-30 2005-12-29 Electrically enhancing the confinement of plasma

Publications (3)

Publication Number Publication Date
JP2008527634A JP2008527634A (ja) 2008-07-24
JP2008527634A5 true JP2008527634A5 (cg-RX-API-DMAC7.html) 2009-02-19
JP5183213B2 JP5183213B2 (ja) 2013-04-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007549623A Expired - Fee Related JP5183213B2 (ja) 2004-12-30 2005-12-29 真空プラズマプロセッサ

Country Status (6)

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US (1) US7632375B2 (cg-RX-API-DMAC7.html)
JP (1) JP5183213B2 (cg-RX-API-DMAC7.html)
KR (1) KR101209536B1 (cg-RX-API-DMAC7.html)
CN (1) CN101088139B (cg-RX-API-DMAC7.html)
TW (1) TWI390584B (cg-RX-API-DMAC7.html)
WO (1) WO2006074050A2 (cg-RX-API-DMAC7.html)

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JP5597463B2 (ja) 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
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JP2022044209A (ja) * 2020-09-07 2022-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN114566415A (zh) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 等离子体处理装置
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法

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