JP2008515197A - インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置 - Google Patents

インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置 Download PDF

Info

Publication number
JP2008515197A
JP2008515197A JP2007533668A JP2007533668A JP2008515197A JP 2008515197 A JP2008515197 A JP 2008515197A JP 2007533668 A JP2007533668 A JP 2007533668A JP 2007533668 A JP2007533668 A JP 2007533668A JP 2008515197 A JP2008515197 A JP 2008515197A
Authority
JP
Japan
Prior art keywords
plasma processing
plasma
processing system
substrate
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007533668A
Other languages
English (en)
Japanese (ja)
Inventor
チェン，チア，チェン
グイニー，ティモシー，ジェイ．
アナプラガダ，ラオ
デシュムク，サブハッシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2008515197A publication Critical patent/JP2008515197A/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007533668A 2004-09-27 2005-09-23 インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置 Withdrawn JP2008515197A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/951,548 US20060065631A1 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
PCT/US2005/034226 WO2006036820A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance

Publications (1)

Publication Number Publication Date
JP2008515197A true JP2008515197A (ja) 2008-05-08

Family

ID=36097837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007533668A Withdrawn JP2008515197A (ja) 2004-09-27 2005-09-23 インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置

Country Status (6)

Country Link
US (1) US20060065631A1 (zh)
JP (1) JP2008515197A (zh)
KR (1) KR20070057983A (zh)
CN (1) CN101088148A (zh)
TW (1) TW200624599A (zh)
WO (1) WO2006036820A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015029093A (ja) * 2013-07-26 2015-02-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ チャンバ内整合及びチャンバ間整合のための、複数パラメータを使用したエッチング速度モデル化及びその使用

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
JP2007081302A (ja) * 2005-09-16 2007-03-29 Toshiba Corp 管理システム、管理方法及び電子装置の製造方法
US20080084650A1 (en) 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
JP4623111B2 (ja) 2008-03-13 2011-02-02 ソニー株式会社 画像処理装置、画像処理方法及びプログラム
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9530620B2 (en) * 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR102043994B1 (ko) * 2017-04-14 2019-11-12 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
US10920320B2 (en) * 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US20190242838A1 (en) * 2018-02-07 2019-08-08 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Non-Invasive Method for Probing Plasma Impedance
CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414324A (en) * 1993-05-28 1995-05-09 The University Of Tennessee Research Corporation One atmosphere, uniform glow discharge plasma
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6302966B1 (en) * 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus
TW483037B (en) * 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
JP3977114B2 (ja) * 2002-03-25 2007-09-19 株式会社ルネサステクノロジ プラズマ処理装置
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015029093A (ja) * 2013-07-26 2015-02-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ チャンバ内整合及びチャンバ間整合のための、複数パラメータを使用したエッチング速度モデル化及びその使用

Also Published As

Publication number Publication date
US20060065631A1 (en) 2006-03-30
KR20070057983A (ko) 2007-06-07
TW200624599A (en) 2006-07-16
WO2006036820A2 (en) 2006-04-06
CN101088148A (zh) 2007-12-12
WO2006036820A3 (en) 2007-07-05

Similar Documents

Publication Publication Date Title
JP5057980B2 (ja) プラズマ加工システムで基板の属性を現場でモニターするためのモニター方法
JP2008515197A (ja) インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置
JP2008515199A (ja) プラズマ周波数測定によるプラズマ加工システムの加工工程モニター方法並びに装置
US7344993B2 (en) Low-pressure removal of photoresist and etch residue
JP5414179B2 (ja) フォトレジスト及びエッチング残余物の低圧除去
TWI427684B (zh) 用於現場基底處理之方法及裝置
US7430496B2 (en) Method and apparatus for using a pressure control system to monitor a plasma processing system
JP2014090192A (ja) 通常の低ｋ誘電性材料および／または多孔質の低ｋ誘電性材料の存在下でのレジスト剥離のための方法
US9147556B2 (en) Plasma processing method and plasma processing apparatus
US20110061811A1 (en) Plasma processing apparatus
JP3362093B2 (ja) エッチングダメージの除去方法
CN115058695A (zh) 溅射方法及半导体器件的制造方法
Yan et al. Solving arcing issues in CVD processes

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080922

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081030

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090917

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090917