TW200624599A - Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance - Google Patents
Methods and apparatus for monitoring a process in a plasma processing system by measuring impedanceInfo
- Publication number
- TW200624599A TW200624599A TW094133153A TW94133153A TW200624599A TW 200624599 A TW200624599 A TW 200624599A TW 094133153 A TW094133153 A TW 094133153A TW 94133153 A TW94133153 A TW 94133153A TW 200624599 A TW200624599 A TW 200624599A
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma processing
- plasma
- value
- processing chamber
- processing system
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/951,548 US20060065631A1 (en) | 2004-09-27 | 2004-09-27 | Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200624599A true TW200624599A (en) | 2006-07-16 |
Family
ID=36097837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094133153A TW200624599A (en) | 2004-09-27 | 2005-09-23 | Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060065631A1 (zh) |
JP (1) | JP2008515197A (zh) |
KR (1) | KR20070057983A (zh) |
CN (1) | CN101088148A (zh) |
TW (1) | TW200624599A (zh) |
WO (1) | WO2006036820A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI609406B (zh) * | 2013-01-11 | 2017-12-21 | 蘭姆研究公司 | 調諧與電漿阻抗有關之參數的方法 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4416569B2 (ja) * | 2004-05-24 | 2010-02-17 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
US7323116B2 (en) * | 2004-09-27 | 2008-01-29 | Lam Research Corporation | Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage |
JP2007081302A (ja) * | 2005-09-16 | 2007-03-29 | Toshiba Corp | 管理システム、管理方法及び電子装置の製造方法 |
US20080084650A1 (en) * | 2006-10-04 | 2008-04-10 | Applied Materials, Inc. | Apparatus and method for substrate clamping in a plasma chamber |
JP4623111B2 (ja) | 2008-03-13 | 2011-02-02 | ソニー株式会社 | 画像処理装置、画像処理方法及びプログラム |
US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US9530620B2 (en) * | 2013-03-15 | 2016-12-27 | Lam Research Corporation | Dual control modes |
US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
US10950421B2 (en) * | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
KR102043994B1 (ko) * | 2017-04-14 | 2019-11-12 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
US10920320B2 (en) * | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US20190242838A1 (en) * | 2018-02-07 | 2019-08-08 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Non-Invasive Method for Probing Plasma Impedance |
CN115696709B (zh) * | 2022-12-28 | 2023-03-21 | 江苏奥文仪器科技有限公司 | 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5414324A (en) * | 1993-05-28 | 1995-05-09 | The University Of Tennessee Research Corporation | One atmosphere, uniform glow discharge plasma |
US5863376A (en) * | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
US6197116B1 (en) * | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
US6063234A (en) * | 1997-09-10 | 2000-05-16 | Lam Research Corporation | Temperature sensing system for use in a radio frequency environment |
US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
US6302966B1 (en) * | 1999-11-15 | 2001-10-16 | Lam Research Corporation | Temperature control system for plasma processing apparatus |
TW483037B (en) * | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
US20040027209A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Fixed matching network with increased match range capabilities |
-
2004
- 2004-09-27 US US10/951,548 patent/US20060065631A1/en not_active Abandoned
-
2005
- 2005-09-23 JP JP2007533668A patent/JP2008515197A/ja not_active Withdrawn
- 2005-09-23 CN CNA2005800397617A patent/CN101088148A/zh active Pending
- 2005-09-23 TW TW094133153A patent/TW200624599A/zh unknown
- 2005-09-23 WO PCT/US2005/034226 patent/WO2006036820A2/en active Application Filing
- 2005-09-23 KR KR1020077009423A patent/KR20070057983A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI609406B (zh) * | 2013-01-11 | 2017-12-21 | 蘭姆研究公司 | 調諧與電漿阻抗有關之參數的方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006036820A3 (en) | 2007-07-05 |
CN101088148A (zh) | 2007-12-12 |
WO2006036820A2 (en) | 2006-04-06 |
JP2008515197A (ja) | 2008-05-08 |
US20060065631A1 (en) | 2006-03-30 |
KR20070057983A (ko) | 2007-06-07 |
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