US20060065631A1 - Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance - Google Patents

Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance Download PDF

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Publication number
US20060065631A1
US20060065631A1 US10/951,548 US95154804A US2006065631A1 US 20060065631 A1 US20060065631 A1 US 20060065631A1 US 95154804 A US95154804 A US 95154804A US 2006065631 A1 US2006065631 A1 US 2006065631A1
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plasma processing
substrate
value
plasma
processing system
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Abandoned
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US10/951,548
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English (en)
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Chia-Cheng Cheng
Timothy Guiney
Rao Annapragada
Subhash Deshmukh
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Lam Research Corp
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Individual
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Priority to US10/951,548 priority Critical patent/US20060065631A1/en
Priority to CNA2005800397617A priority patent/CN101088148A/zh
Priority to PCT/US2005/034226 priority patent/WO2006036820A2/en
Priority to KR1020077009423A priority patent/KR20070057983A/ko
Priority to TW094133153A priority patent/TW200624599A/zh
Priority to JP2007533668A priority patent/JP2008515197A/ja
Assigned to LAM RESEARCH CORPORATION reassignment LAM RESEARCH CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GUINEY, TIMOTHY J, CHENG, CHIA CHENG
Publication of US20060065631A1 publication Critical patent/US20060065631A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

  • the present invention relates in general to substrate manufacturing technologies and in particular to methods and apparatus for monitoring a process in a plasma processing system by measuring impedance.
  • a substrate e.g., a semiconductor substrate or a glass panel such as one used in flat panel display manufacturing
  • plasma is often employed.
  • the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit.
  • the substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon.
  • a substrate is coated with a thin film of hardened emulsion (i.e., such as a photoresist mask) prior to etching. Areas of the hardened emulsion are then selectively removed, causing components of the underlying layer to become exposed.
  • the substrate is then placed in a plasma processing chamber on a substrate support structure comprising a mono-polar or bi-polar electrode, called a chuck or pedestal.
  • Appropriate etchant source are then flowed into the chamber and struck to form a plasma to etch exposed areas of the substrate.
  • capacitively coupled plasma processing systems may be configured with a single or with two separate RF power sources.
  • Source RF generated by source RF generator 134
  • bias RF generated by bias RF generator 138
  • matching network 136 is coupled to source RF generator 134 and bias RF generator 138 .
  • matching network 136 may also include a V/I probe (not shown) that can measure the voltage and impedance of a current transmitted to plasma 110 , as well as the ability to modify a generated plasma frequency in order to better optimize the plasma to process conditions.
  • an appropriate set of gases is flowed into chamber 102 through an inlet in a top electrode 104 from gas distribution system 122 .
  • These plasma processing gases may be subsequently ionized to form a plasma 110 , in order to process (e.g., etch or deposition) exposed areas of substrate 114 , such as a semiconductor substrate or a glass pane, positioned with edge ring 115 on an electrostatic chuck 116 , which also serves as an electrode
  • a cooling system 140 is coupled to electrostatic chuck 116 in order to achieve thermal equilibrium once the plasma is ignited.
  • the cooling system itself is usually comprised of a chiller that pumps a coolant through cavities in within the chuck, and helium gas pumped by pump 111 between the chuck and the substrate (e.g., backside He Flow).
  • helium gas In addition to removing the generated heat, the helium gas also allows the cooling system to rapidly control heat dissipation. That is, increasing helium pressure subsequently also increases the heat transfer rate.
  • Most plasma processing systems are also controlled by sophisticated computers comprising operating software programs. In a typical operating environment, manufacturing process parameters (e.g., voltage, gas flow mix, gas flow rate, pressure, etc.) are generally configured for a particular plasma processing system and a specific recipe.
  • dielectric layers are electrically connected by a conductive plug filling a via hole.
  • a conductive plug filling a via hole.
  • an opening is formed in a dielectric layer, usually lined with a TaN or TiN barrier, and then subsequently filled with a conductive material (e.g., aluminum (Al), copper (Cu), etc.) that allows electrical contact between two sets of conductive patterns.
  • a conductive material e.g., aluminum (Al), copper (Cu), etc.
  • CMP chemical mechanical polishing
  • a blanket layer of silicon nitride is then deposited to cap the copper.
  • Contamination in particular, tends to present a substantial problem.
  • the degree of contamination is usually dependent on the specific plasma process (e.g., chemistry, power, and temperature) and the initial surface condition of chamber. Since fully removing deposits may be time consuming, a plasma processing system chamber is generally only substantially cleaned when the particle contamination levels reach unacceptable levels, when the plasma processing system must be opened to replace a consumable structure (e.g., edge ring, etc.), or as part of scheduled preventive maintenance (PM).
  • a consumable structure e.g., edge ring, etc.
  • One solution may be to create a simplified empirical model of the plasma processing system in order to sufficiently capture the behavior of the tool.
  • creating an empirical model may be problematic.
  • a modified non-operational plasma chamber may be analyzed in order to extract parameters for the simplified empirical.
  • the individual components of a plasma processing system may be individually measured using a network analyzer.
  • the invention relates, in one embodiment, in a plasma processing system, to a method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber.
  • the method includes positioning a substrate in the plasma processing chamber.
  • the method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber.
  • the method further includes obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present.
  • the method also includes correlating the measured impedance value with an attribute of the process, if the measured impedance value is outside of a predefined impedance value envelope.
  • the invention relates, in one embodiment, in a plasma processing system, to an apparatus for in-situ monitoring a process in a plasma processing system having a plasma processing chamber.
  • the apparatus includes a means of positioning a substrate in the plasma processing chamber.
  • the apparatus further includes a means of striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber.
  • the apparatus also includes a means of obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. If the measured impedance value is outside of a predefined impedance value envelope, the apparatus further includes a means of correlating the measured impedance value with an attribute of the process.
  • FIG. 1 shows a simplified diagram of a capacitively coupled plasma processing system
  • FIG. 2 shows a simplified statistical process control diagram of a set of blanket oxide etches in a particular same plasma processing system, according to one embodiment of the invention
  • FIG. 3 shows the simplified diagram of FIG. 2 , with the addition of the backside He flow plot, according to one embodiment of the invention
  • FIG. 4 shows the simplified diagram of FIG. 2 , with the addition of the measured impedance for 27 MHz at the V/I probe, according to one embodiment of the invention
  • FIG. 5 shows the simplified diagram of FIG. 2 , with the addition of the measured impedance for 2 MHz at the V/I probe, according to one embodiment of the invention
  • FIG. 6 shows the simplified diagram of FIG. 2 , with the addition of the measured frequency for 27 MHz at the V/I probe, according to one embodiment of the invention
  • FIG. 7 shows the simplified diagram of FIG. 2 , with the addition of the measured impedance phase angle at the V/I probe, according to one embodiment of the invention.
  • FIG. 8 shows a simplified diagram of a method for the in-situ monitoring of a process, according to one embodiment of the invention.
  • an excursion represents a data point that is outside of an established statistical range or a value envelope. That is, an excursion may be a data point above a statistical upper control limit or below a statistical lower control limit. In a plasma process, any excursion that goes undetected or is not forestalled may place a significant amount of substrate material at risk.
  • plasma parameters are expected to remain within a particular range or value envelope (i.e., a set of impedances for each plasma frequency, a set of phase angles for each plasma frequency, a particular frequency range for each plasma frequency, a self-bias voltage, etc.).
  • This range is often 3 standard deviations (or 3 ⁇ ) of some target or base line.
  • plasma processing recipes are optimized for, and hence tend to be very sensitive to, the plasma parameters. Therefore, for a given problem in a plasma processing system, a substrate attribute excursion (i.e., improper etch rate, etc.) can be correlated to a plasma parameter excursion (i.e., impedance value greater than 3 ⁇ for a particular frequency, etc.). That is, a particular problem would also tend to cause a set of excursions in both the plasma as well as the substrate.
  • Common plasma processing problems include chamber contamination, plasma structural damage and deterioration, gas pressure leak, gas flow mixture problem, chamber temperature out of specification, bad RF cable, improperly connected cable, etc.
  • a correlation can be determined between an excursion in the impedance of an RF power source at a particular frequency and a substrate attribute excursion (e.g., improper photoresist etch rate, etc.).
  • a correlation can be determined between an excursion of a frequency in a frequency-tuned plasma system and a substrate attribute excursion (e.g., improper photoresist etch rate, etc.).
  • a substrate attribute excursion e.g., improper photoresist etch rate, etc.
  • frequency-tuned plasma systems can modify a set of frequencies used to generate the plasma in order to minimize the reflected power during a process. As a result, the frequency changes as a response to the changes in plasma impedance.
  • a correlation can be determined between an excursion in a phase angle of an RF power source at a particular frequency and a substrate attribute excursion (e.g., improper photoresist etch rate, etc.).
  • a correlation can be determined between an excursion in a self-bias voltage and a substrate attribute excursion (e.g., improper photoresist etch rate, etc.).
  • an electric field must be generated just in front of the substrate (e.g., between the substrate and the plasma) which will allow plasma ions of sufficient energy to bombard the substrate.
  • self-bias voltage the greater the potential difference between it and the plasma discharge voltage, the greater the tendency of the substrate to attract plasma ions.
  • the self-bias voltage must also have a substantially large potential difference to these surfaces. Subsequently, a problem that would tend to affect the plasma, and hence the substrate, would also tend to affect the self-bias voltage.
  • plasma processing systems are often powered with some type of RF power source.
  • RF power source Often, there is a source RF generator used to generate and control the plasma density, and a bias RF generator commonly used to control the plasma DC bias and the ion bombardment energy.
  • These RF sources are commonly coupled to the plasma through a matching network that attempts to match the impedance of the RF power sources to that of plasma.
  • matching network may also include a V/I probe that can measure voltage (V), current (I), phase angle ( ⁇ ) between the voltage (V) and current (I) of the plasma, impedance (Z), delivered power, forward power, reflected power, reactive power, reflection coefficient, etc.
  • the matching network may also modify a generated plasma frequency within an established range value envelope in order to better optimize the plasma to process conditions.
  • a plasma processing system that can modify a set of frequencies used to generate the plasma is generally referred to as a frequency-tuned plasma system.
  • Impedance a complex number
  • V 0 is the voltage at fundamental (peak voltage)
  • I 0 is the current at fundamental (peak current)
  • R is the real resistance
  • j sqrt( ⁇ 1) (the imaginary part of a complex number)
  • X is the complex reactance.
  • Complex reactance is an expression of the extent to which an electronic component, stores and releases energy as the current and voltage fluctuate with each AC cycle of the generated signal with a angular frequency denoted by ⁇ .
  • FIG. 2 a simplified statistical process control diagram of a set of blanket oxide etches in a particular same plasma processing system over the course of a few weeks is shown, according to one embodiment of the invention.
  • quality in a plasma processing system refers to conformance to requirements.
  • Conformance generally refers to the degree to which a substrate meets pre-established requirements or specifications in a recipe, such as targets, tolerances, etc.
  • any given plasma process may also include a degree of uncertainty, also known as variance.
  • variance a degree of uncertainty
  • a decrease in variance is often directly correlated to an corresponding increase in quality.
  • Some causes of variance are considered normal or acceptable, and do not necessarily call for action. For example, slight differences in a manufactured substrate caused by running the same process on difference plasma processing systems. That is, in an attempt to match one plasma processing system to another, variations are almost certain to occur.
  • Other causes of variance are out of the ordinary or special. They are not an expected part of the process and hence may require some type of corrective action. That is, they exceed the boundaries of normal variation. For example, moisture in a plasma chamber which can destroy a substrate.
  • the target is a desired mean etch rate of about 110.52 nm/min, and tolerance refers to maintaining the etch rate within an upper control limit (ER UCL) of about 120.12 nm/min, and a lower control limit (ER LCL) of about 100.91 nm/min.
  • ER UCL upper control limit
  • ER LCL lower control limit
  • Plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • two excursion points may become apparent: 204 performed on Apr. 6, 2004, and 206 performed on Apr. 9, 2004.
  • an excursion represents a data point that is outside of an established statistical range or value envelope, and may be caused by several factors (i.e., chamber contamination, plasma structural damage and deterioration, gas pressure leak, gas flow mixture problem, chamber temperature out of specification, bad RF cable, improperly connected cable, backside He flow, etc.).
  • plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • plot 208 reflects the corresponding measured backside He flow during each etch.
  • both etch plot 202 and plot He flow plot 208 show excursions at 204 . That is, as the He flow became reduced to about 33.5 SCCM, the etch rate also was substantially reduced to about 33.4 nm/min, substantially outside the 3 ⁇ lower control limit (LCL) of 100.91 nm/min.
  • LCL 3 ⁇ lower control limit
  • plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • plot 402 reflects the corresponding measured impedance for 27 MHz.
  • the desired target etch rate is about 110.52 nm/min, with an upper control limit (ER UCL) of about 120.12 nm/min and a lower control limit (ER LCL) of about 100.91 nm/min.
  • the desired target impedance is about 3.88 Ohms, with an upper control limit (Z UCL) of about 4.02 Ohms and a lower control limit (Z LCL) of about 3.75 Ohms.
  • Both etch plot 202 and the measured impedance for 27 MHz 402 show excursions both around 204 on Apr. 6, 2004 and 206 a - b on Apr. 9, 2004. Hence, an excursion in the measured impedance (whether above the Z UCL or below the Z LCL) appears to be correlated to a substantial reduction in the etch rate below the E/R LCL (i.e., an attribute excursion).
  • the inventor believes that factors that may substantially alter a plasma impedance, may also tend to cause substantial changes in substrate attributes, such as the etch rate. These factors may include the deterioration of chamber materials (e.g., electrode, confinement ring, etc.), excursion of gas flow, gas pressure, or temperature, changes in substrate types, changes in the chuck surface, problems with the RF generator, an RF connection, a bad RF cable, etc.
  • chamber materials e.g., electrode, confinement ring, etc.
  • excursion of gas flow e.g., gas pressure, or temperature
  • changes in substrate types e.g., changes in the chuck surface
  • problems with the RF generator e.g., an RF connection, a bad RF cable, etc.
  • plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • plot 502 reflects the corresponding measured impedance for 27 MHz.
  • the desired target etch rate is about 110.52 nm/min, with an upper control limit (ER UCL) of about 120.12 nm/min and a lower control limit (ER LCL) of about 100.91 nm/min.
  • the desired target impedance is about 145.73 Ohms, with an upper control limit (Z UCL) of about 149.16 Ohms and a lower control limit (Z LCL) of about 142.29 Ohms.
  • Both etch plot 202 and the measured impedance for 2 MHz 402 show excursions both around 204 a - b on Apr. 6, 2004 and 206 on Apr. 9, 2004.
  • an excursion in the measured impedance appears to be correlated to a substantial reduction in the etch rate below the E/R LCL (i.e., an attribute excursion).
  • frequency-tuned plasma systems can modify a set of frequencies used to generate the plasma in order to minimize the reflected power during a process. As a result, the frequency changes as a response to the changes in plasma impedance.
  • plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • plot 602 reflects the corresponding measured frequency for 27 MHz.
  • the desired target etch rate is about 110.52 nm/min, with an upper control limit (ER UCL) of about 120.12 nm/min and a lower control limit (ER LCL) of about 100.91 nm/min.
  • the desired target frequency for 27 MHz is about 27.47680 MHz, with an upper control limit (FREQ UCL) of about 27.52331 MHz and a lower control limit (FREQ LCL) of about 27.43029 MHz.
  • Both etch plot 202 and the measured frequency for 27 MHz 602 show excursions both around point 204 a - b at Apr. 6, 2004 and points 206 at around Apr. 9, 2004.
  • an excursion is defined as a point beyond 3 standard deviations (3 ⁇ ) of the plot mean.
  • an excursion in the measured frequency appears to be correlated to a substantial reduction in the etch rate below the E/R LCL (i.e., an attribute excursion).
  • plot 202 reflects the etch rate of the blanket oxide in nanometers per minute (nm/min) over the course of several weeks.
  • plot 702 reflects the corresponding measured phase angle for impedance.
  • the desired target etch rate is about 110.52 nm/min, with an upper control limit (ER UCL) of about 120.12 nm/min and a lower control limit (ER LCL) of about 100.91 nm/min.
  • the desired target of the measured impedance phase angle is about ⁇ 59.67°, with an upper control limit (ANGLE UCL) of about ⁇ 58.17°, and a lower control limit (ANGLE LCL) of about ⁇ 61.16°.
  • Both etch plot 202 and the measured phase angle 702 show excursions both around point 204 at Apr. 6, 2004 and point 206 a - b at around Apr. 9, 2004.
  • an excursion is defined as a point beyond 3 standard deviations (3 ⁇ ) of the plot mean.
  • an excursion in the measured phase angle appears to be correlated to a substantial reduction in the etch rate below the E/R LCL (i.e., an attribute excursion).
  • FIG. 8 a simplified diagram is shown of a method for the in-situ monitoring of a process in a plasma processing system having a plasma processing chamber, according to one embodiment of the invention.
  • a substrate is positioned in the plasma processing chamber, at step 802 .
  • a plasma is struck within the plasma processing chamber while the substrate is disposed within the plasma processing chamber, at step 804 .
  • a measured impedance that exists after the plasma is struck is then obtained, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present, at step 806 .
  • the measured impedance value is outside of a predefined impedance value envelope, at step 808 , then the measured impedance value is correlated with an attribute of the process, at step 810 . If not, then the measured impedance value is not correlated with an attribute of the process, at step 812 .
  • Advantages of the invention include methods and apparatus for monitoring a process in a plasma processing system by measuring impedance. Additional advantages include the use of a substantially reliable signal that can be used for diagnostics or monitoring purposes.

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Application Number Priority Date Filing Date Title
US10/951,548 US20060065631A1 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
CNA2005800397617A CN101088148A (zh) 2004-09-27 2005-09-23 通过测量阻抗监控等离子体处理系统中处理的方法和装置
PCT/US2005/034226 WO2006036820A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
KR1020077009423A KR20070057983A (ko) 2004-09-27 2005-09-23 임피던스를 측정하여 플라즈마 처리 시스템에서의프로세스를 모니터링하는 방법 및 장치
TW094133153A TW200624599A (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
JP2007533668A JP2008515197A (ja) 2004-09-27 2005-09-23 インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置

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