WO2005098091A2 - A method of plasma etch endpoint detection using a v-i probe diagnostics - Google Patents
A method of plasma etch endpoint detection using a v-i probe diagnostics Download PDFInfo
- Publication number
- WO2005098091A2 WO2005098091A2 PCT/US2005/011214 US2005011214W WO2005098091A2 WO 2005098091 A2 WO2005098091 A2 WO 2005098091A2 US 2005011214 W US2005011214 W US 2005011214W WO 2005098091 A2 WO2005098091 A2 WO 2005098091A2
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- WO
- WIPO (PCT)
- Prior art keywords
- plasma processing
- harmonics
- control system
- probe
- endpoint
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Definitions
- the present invention generally relates to methods and control systems for improving semiconductor processing results and, in particular, to methods of detecting an endpoint for dielectric etching.
- Plasma processing systems have been around for some time. Over the years, plasma processing systems utilizing inductively coupled plasma sources, electron cyclotron resonance (ECR) sources, capacitive sources, and the like, have been introduced and employed to various degrees to process semiconductor substrates and glass panels.
- ECR electron cyclotron resonance
- etching steps are typically encountered.
- materials are deposited onto a substrate surface (such as the surface of a glass panel or a wafer).
- a substrate surface such as the surface of a glass panel or a wafer.
- deposited and/or grown layers including various forms of silicon, silicon dioxide, silicon nitride, metals and the like may be formed on the surface of the substrate.
- etching may be performed to selectively remove materials from predefined areas on the substrate surface.
- etched features such as vias, contacts, and/or trenches may be formed in the layers of the substrate.
- Some etch processes may utilize chemistries and/or parameters that simultaneously etch and deposit films on the plasma-facing surfaces.
- the plasma can be generated and/or sustained using a variety of plasma generation methods, including inductively-coupled, ECR, microwave, and capacitively-coupled plasma methods.
- An example plasma processing system of the capacitively-coupled type is shown in FIG. 1 and indicated by the general reference character 150.
- Many of the components of plasma processing system 150 are conventional and may be found in, for example, the Exelan® family of plasma etchers (e.g., 2300 Exelan® Flex), which is available from Lam Research Corporation of Fremont, CA.
- plasma processing system 150 includes a chamber 100, which provides an enclosure for processing as well as defining an exhaust passageway by way of a vacuum pump (e.g., "Pump") for exhausting etch byproducts.
- a vacuum pump e.g., "Pump
- Chamber 100 is grounded in this exemplary plasma processing system.
- An upper electrode 104 which is also electrically grounded in the example of FIG. 1, functions as the etchant source gas (e.g., "Feedgas") distribution mechanism.
- Etchant source gas is introduced into the chamber via an inlet and is distributed in the plasma region 102 between upper electrode 104 and an electrostatic chuck (ESC) 108, which is disposed above a lower electrode 106.
- Wafer 109 for processing can be positioned on ESC 108.
- Lower electrode 106 is energized by a radio frequency (RF) delivery system, which includes RF Matching Network 110 and RF power supply 118.
- V-I Probe 112 may be coupled to RF Matching Network 110 output to measure parameters furnished by RF power supply 118 for feedback control purposes.
- RF power supply 118 supplies both about 2 MHz and about 27 MHz frequencies to lower electrode 106.
- the probe sensor (V-I Probe 112) is positioned downstream from the RF supply and generally as close to the ESC as possible. There may be maintenance concerns, however, that limit how close to the ESC the probe can be positioned. As one example, N-I Probe 112 may be about 8-9 inches from the ESC. N-I Probe 112 and digital signal processor (DSP) 114 may be part of an integrated commercial product.
- One such commercially available probe product is VI-PROBE-4100 Frequency Scanning Probe®, which is available from MKS E ⁇ I Products of MKS Instruments, Inc., Andover, MA.
- SmartPIMTM which is available from Straatum Processware, Ltd. (formerly Scientific Systems, Ltd.), of Dublin, Ireland.
- Each such commercial product can detect voltage, current, and phase parameter information for a variety of RF supply frequencies. Further, each can provide harmonics for these parameters via Fast Fourier Transform (FFT) or other suitable methods in the DSP. Accordingly, signals 122 of plasma processing system 150 can include all associated harmonics of each parameter measured by V-I Probe 112. Etch Process Module Controller 116 can then use this information to control one or more plasma processing steps.
- FFT Fast Fourier Transform
- signals 122 of plasma processing system 150 can include all associated harmonics of each parameter measured by V-I Probe 112.
- Etch Process Module Controller 116 can then use this information to control one or more plasma processing steps.
- a common process control for etching applications in plasma systems is endpoint detection. Traditional methods for determining endpoints include: (1) laser interferometry and reflectivity; (2) optical emission spectroscopy; (3) direct observation; (4) mass spectroscopy; and (5) time-based prediction. By far, optical emission spectroscopy or optical means is the most widely used method in conventional plasma processing approaches.
- optical emissions may work fine.
- the sensitivity of this approach is limited by the etch rate and the total area being etched.
- optical endpoint detection is generally not robust for high aspect ratio dielectric etches, such as vias. Many such dielectric etches typically have a very low exposure area, such as perhaps only 1% of the total surface area of the oxide or dielectric film. Optical approaches become less and less reliable as technology scales for these applications.
- a plasma processing control system can include: a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select at least one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing application.
- the electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching.
- a system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.
- a method for detecting an endpoint can include the general methods of performing a manufacturing endpoint detection calibration and performing production environment endpoint detection.
- the performing of a manufacturing endpoint detection calibration can include the steps of: (i) performing a plasma etching on a sample wafer; (ii) empirically determining a selected harmonics plot to detect an endpoint; and (iii) obtaining harmonics parameters that indicate the endpoint.
- the performing of a production environment endpoint detection can include the steps of: (i) performing the plasma etching on a production wafer; (ii) obtaining the selected harmonics plot; (iii) analyzing the selected harmonics plot to detect the endpoint; (iv) continuing the plasma etching if the endpoint is not detected; (v) discontinuing the plasma etching if the endpoint is detected; and (vi) performing any post-endpoint activities.
- FIG. 1 is a cross-section view of a conventional plasma processing system with a V-I probe.
- FIG. 2 is a flow diagram of a manufacturing lab endpoint detection calibration method in accordance with an embodiment of the invention.
- FIG. 3 is a flow diagram of a production environment endpoint detection method in accordance with an embodiment of the invention.
- FIG. 4 is a graph of voltage harmonics waveforms for endpoint detection in accordance with embodiments of the invention.
- FIG. 5 is a graph of phase harmonics waveforms for endpoint detection in accordance with embodiments of the invention.
- FIG. 6 is a graph of a current harmonic waveform for endpoint detection in accordance with embodiments of the invention.
- FIG. 7 shows, in accordance with an embodiment of the present invention, an implementation involving multiple V-I probes.
- V-I probe can be used to measure current, voltage, and phase parameters.
- harmonics for each can be determined through signal processing (e.g., DSP 114 of FIG. 1).
- harmonics including the fundamental or first harmonic
- these methods are adaptable to different frequency choices, as provided by, for example, RF power supply 118 of FIG. 1.
- Methods according to embodiments of the invention allow for the selection of a particular parameter and associated harmonic most suitable for endpoint detection at a given RF frequency.
- a second harmonic of a voltage parameter for an about 2 MHz RF signal can be used to reliably detect an endpoint.
- the methods of selecting this frequency, harmonic, and parameter for optimal endpoint detection for a particular application will be discussed in more detail below.
- a manufacturing endpoint detection calibration method and a production environment endpoint detection method are provided.
- the manufacturing endpoint detection calibration method can allow for the selection of the best harmonic and parameter for a given frequency for endpoint detection.
- the production environment endpoint detection method can allow for the process control of endpoint detection for a variety of process steps in a production environment.
- a general method according to embodiments of the invention may be as follows.
- a test etching of a number of wafers e.g., 2 to 100
- Each of the available harmonics may be reviewed to determine which harmonic for which parameter will give the best signature at the endpoint.
- an appropriate wafer should be chosen for the test etching. For example, a "nominal" process wafer may be chosen in order to best center the detection margin.
- a flow diagram of a manufacturing lab endpoint detection calibration method in accordance with an embodiment of the invention is shown and indicated by the general reference character 200.
- the flow can begin in Start 202.
- the substrate of a test wafer or a sample wafer can be etched for a given time (step 204).
- the endpoint time of etch can be determined by independent means, e.g., "empirically" determined (step 206).
- One way to empirically determine the endpoint on the sample wafer is by performing a Scanning Electron Microscopy (SEM) analysis on the etched location of the sample wafer.
- SEM Scanning Electron Microscopy
- Such a predetermining of the endpoint can allow for a "pinpointing" of the endpoint detection time on each harmonics plots.
- there can be a predetermined way of determining the endpoint e.g., SEM analysis of a sample wafer
- an observation of all available plots to empirically determine which one can provide the best correlated endpoint indicator
- decision box 208 can route the flow back to step 204 if the endpoint time has not been detected. Otherwise, the flow can proceed to etch a new substrate beyond the endpoint time and record V-I probe signals (step 210).
- the harmonics plots for a given RF frequency including the parameters of voltage, current, and phase, can be analyzed and compared to determine the most sensitive signature of endpoint near the known endpoint time (step 212).
- the endpoint harmonic algorithm can be defined (step 214).
- the first harmonic or fundamental waveform may be the most appropriate for an endpoint detection according to embodiments.
- the second harmonic for a voltage parameter at an about 2 MHz supply was found to provide the best endpoint detection for a dielectric etch application.
- step 214 may include selecting a mathematical way (i.e., "algorithm" of finding the endpoint from the selected harmonics.
- algorithm a mathematical way of finding the endpoint from the selected harmonics.
- the chosen algorithm and harmonic/parameter combination can be programmed in software located in Etch Process Module Controller 116 of FIG. 1, for example.
- the flow can continue with etching a new substrate (step 216).
- the endpoint accuracy can be verified with independent means (step 218).
- the flow can complete in step 220.
- a flow diagram of a production environment endpoint detection method in accordance with an embodiment of the invention is shown and indicated by the general reference character 350.
- the flow can begin in Start 300. First, a wafer can be loaded (step 302). Next, etching can begin on the wafer (step 304). Next, the substrate (e.g., of a production wafer) can be etched while monitoring the V-I probe signal (step 306). Next, the V-I signals can be measured (step 308) and then analyzed (step 310). The analysis can include the use of conventional algorithms to detect an endpoint from a plot.
- a time window may be incorporated into the detection method whereby a time range where the endpoint is expected can be effectively highlighted on a harmonics plot. More details of endpoint detection from a plot will be discussed below with reference to FIG. 4.
- decision box 312 can route the flow to step 314 where the etching can be continued. The flow from step 314 can then proceed to step 308. If the endpoint has been detected, post-endpoint activities, such as etching for a designated additional time period or substituting another chemical or any other processing activity can be performed (step 316). The flow can complete in step 318.
- FIGS. 4-6 show the associated harmonics waveforms and will be discussed in detail below ⁇
- FIG. 4 a graph of voltage harmonics waveforms for endpoint detection in accordance with embodiments of the invention is shown and indicated by the general reference character 400.
- This is an example waveform snapshot showing the possibility of using either a fundamental or a 2 nd harmonic plot for endpoint detection.
- the general method may be to determine the best harmonic for a parameter (e.g., voltage, current, or phase) at a given RF frequency.
- a parameter e.g., voltage, current, or phase
- the characteristics that may make one waveform preferable over another include the largest amplitude change about the endpoint as well as one that is repeatable and reproducible from wafer-to-wafer. Such repeatability is an important characteristic for production environments.
- a parameter e.g., voltage, current, or phase
- Waveform 402 shows a first harmonic (i.e., fundamental) plot of the voltage parameter for an RF frequency of about 27 MHz. From this graph, the endpoint can be determined corresponding to region 406.
- One such method of making this determination is an algorithm that looks for a trough and perhaps includes a filtering to smooth out the small manipulations (higher frequencies).
- a delay factor may be used to "bracket" or form a window around the endpoint because one may not expect an endpoint to happen before or after a certain point in time.
- Other possible methods include using amplitude differences in signals, derivative functions, ratios, or any other standard techniques.
- Waveform 404 shows a 2 nd harmonic plot of the voltage parameter for an RF frequency of about 2 MHz.
- the waveform shows characteristics for determining an endpoint, as shown. Accordingly, either of waveform 402 or waveform 404 may be effectively chosen and used for endpoint detection, according to embodiments of the invention.
- FIG. 5 a graph of phase harmonics waveforms for endpoint detection in accordance with embodiments of the invention is shown and indicated by the general reference character 500.
- Waveform 502 shows a first harmonic (i.e., fundamental) plot of the phase parameter for an RF frequency of about 27 MHz.
- Waveform 504 shows a 2 n harmonic plot of the phase parameter for an RF frequency of about 2 MHz.
- the endpoint determination would be more difficult for the about 2 MHz phase parameter 2 nd harmonic than for the approximately 27 MHz phase parameter fundamental plot.
- another parameter and/or harmonic may be chosen to determine the endpoint for the approximately 2 MHz RF supply.
- FIG. 6 a graph of a current harmonic waveform for endpoint detection in accordance with embodiments of the invention is shown and indicated by the general reference character 600.
- Waveform 602 shows a 2 nd harmonic plot of the current parameter for an RF frequency of about 2 MHz. From this graph, the endpoint can be determined, as indicated.
- each of the parameters of voltage, phase, and current may have a harmonic suitable for endpoint detection according to embodiments of the invention. In other applications, other parameters and/or harmonics may provide the best endpoint detection plots.
- a Vl-probe can be provided with the bottom electrode alone, with the top electrode alone, or with each of the two electrodes.
- Fig. 7 shows an alternative implementation wherein a V-I probe 732 and associated DSP 734 are provided with the top powered electrode 704. V-I probe 712 and DSP 714 are provided with the bottom powered electrode 708.
- Top powered electrode 704 is also provided with associated components, including RF matching network 730, RF power supply 728, and top electrode insulator 738 for insulating top electrode 704 from grounded chamber 700.
- the endpoint signal can be measured from V-I probe 712, V-I probe 732, or from both of the V-I probes.
- RF frequencies of about 2 MHz, about 27 MHz, and about 60 MHz are mentioned as exemplary RF frequencies, any other RF frequency or suitable type of frequency applicable to a plasma processing system or the like may also be employed. It should also be noted that there are many alternative ways of implementing the system and methods of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and equivalents as fall within the true spirit and scope of the present invention.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007506334A JP2007531999A (en) | 2004-03-30 | 2005-03-30 | Plasma etch endpoint detection method using VI probe diagnostic method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/813,829 US20050217795A1 (en) | 2004-03-30 | 2004-03-30 | Method of plasma etch endpoint detection using a V-I probe diagnostics |
US10/813,829 | 2004-03-30 |
Publications (3)
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WO2005098091A2 true WO2005098091A2 (en) | 2005-10-20 |
WO2005098091A3 WO2005098091A3 (en) | 2007-03-15 |
WO2005098091B1 WO2005098091B1 (en) | 2007-04-26 |
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PCT/US2005/011214 WO2005098091A2 (en) | 2004-03-30 | 2005-03-30 | A method of plasma etch endpoint detection using a v-i probe diagnostics |
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Country | Link |
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US (1) | US20050217795A1 (en) |
JP (1) | JP2007531999A (en) |
KR (1) | KR20070020226A (en) |
CN (1) | CN1998069A (en) |
TW (1) | TW200610051A (en) |
WO (1) | WO2005098091A2 (en) |
Families Citing this family (12)
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KR100937164B1 (en) * | 2007-12-20 | 2010-01-15 | 정진욱 | Process monitoring apparatus and the method of the same |
KR20110046437A (en) * | 2008-07-07 | 2011-05-04 | 램 리써치 코포레이션 | Rf biased capacitively coupled electrostatic probe device for characterizing a film in a plasma processing chamber |
US8440061B2 (en) * | 2009-07-20 | 2013-05-14 | Lam Research Corporation | System and method for plasma arc detection, isolation and prevention |
KR101760536B1 (en) * | 2009-11-19 | 2017-07-31 | 램 리써치 코포레이션 | Methods and apparatus for controlling a plasma processing system |
CN102209425B (en) * | 2011-01-08 | 2012-07-18 | 大连理工大学 | Radio frequency discharge plasma diagnostic device |
US9197196B2 (en) * | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
US10297433B2 (en) * | 2016-07-05 | 2019-05-21 | Bruker Daltonik Gmbh | Suppressing harmonic signals in ion cyclotron resonance mass spectrometry |
US10269545B2 (en) * | 2016-08-03 | 2019-04-23 | Lam Research Corporation | Methods for monitoring plasma processing systems for advanced process and tool control |
US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
WO2021034885A1 (en) * | 2019-08-19 | 2021-02-25 | Applied Materials, Inc. | Methods and apparatus for controlling rf parameters at multiple frequencies |
CN114063479B (en) * | 2021-11-12 | 2024-01-23 | 华科电子股份有限公司 | Radio frequency power supply control method and system applied to multi-output module of etching machine |
WO2024019020A1 (en) * | 2022-07-21 | 2024-01-25 | 東京エレクトロン株式会社 | Plasma processing device and endpoint detection method |
Citations (1)
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US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
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US236465A (en) * | 1881-01-11 | Furnace for burning cane-trash | ||
US1538538A (en) * | 1924-04-28 | 1925-05-19 | Wood Marie Elizabeth | Pad for children's chairs |
US2254466A (en) * | 1938-04-15 | 1941-09-02 | Albert Lisa | High-chair pad |
US2652183A (en) * | 1950-06-15 | 1953-09-15 | Hlivka Bernice | Baby holder for children's chairs |
US3578380A (en) * | 1969-03-07 | 1971-05-11 | Rosalind R Jacobus | Sanitary cover for shopping cart seat |
US4659143A (en) * | 1986-01-27 | 1987-04-21 | Maclennan Diane | Food catcher for attaching to table |
US4848834A (en) * | 1989-01-24 | 1989-07-18 | Ron Linski | Infant food catch |
US5121938A (en) * | 1991-03-04 | 1992-06-16 | Invacare Corporation | Slip covers for wheelchairs |
US6129417A (en) * | 1991-08-19 | 2000-10-10 | Melissa Cohen-Fyffe | Shopping cart clean seat cover |
US5458732A (en) * | 1992-04-14 | 1995-10-17 | Texas Instruments Incorporated | Method and system for identifying process conditions |
US5238293A (en) * | 1992-09-08 | 1993-08-24 | Gibson Donna S | Shopping cart seat cover |
US5547250A (en) * | 1994-10-21 | 1996-08-20 | Childers; Shirley A. | Cart caddy for shopping carts |
US5678888A (en) * | 1996-10-15 | 1997-10-21 | Sowell; Christy-Anne M. | Shopping cart child seat cover |
US6116162A (en) * | 1997-10-09 | 2000-09-12 | Santa Cruz; Cathy D. | Combination protective bumper and placemat |
US6237998B1 (en) * | 1999-02-17 | 2001-05-29 | Sandra Stephens Aprile | Baby seat cover |
US6428098B1 (en) * | 1999-11-16 | 2002-08-06 | Florence B. Allbaugh | Child seat liner |
US20010048235A1 (en) * | 2000-01-21 | 2001-12-06 | Hartranft Amy M. | Seat cover For Shopping cart child seat |
US6631950B1 (en) * | 2000-06-26 | 2003-10-14 | Balanced Health, Inc. | Protective cover for a high chair |
JP3708031B2 (en) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | Plasma processing apparatus and processing method |
US6517155B1 (en) * | 2001-08-20 | 2003-02-11 | Marc Landine | Disposable shopping cart seat liner |
US6655734B2 (en) * | 2001-08-30 | 2003-12-02 | Herbistic Enterprises, Llc | Disposable sanitary seat cover |
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- 2005-03-30 WO PCT/US2005/011214 patent/WO2005098091A2/en active Application Filing
- 2005-03-30 JP JP2007506334A patent/JP2007531999A/en not_active Withdrawn
- 2005-03-30 CN CNA2005800104724A patent/CN1998069A/en active Pending
- 2005-03-30 KR KR1020067020681A patent/KR20070020226A/en not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
Also Published As
Publication number | Publication date |
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US20050217795A1 (en) | 2005-10-06 |
TW200610051A (en) | 2006-03-16 |
CN1998069A (en) | 2007-07-11 |
JP2007531999A (en) | 2007-11-08 |
WO2005098091B1 (en) | 2007-04-26 |
WO2005098091A3 (en) | 2007-03-15 |
KR20070020226A (en) | 2007-02-20 |
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